My Inquiry
My Account
Vishay Siliconix SIR5112DP-T1-RE3
- Part No.:
- SIR5112DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR5112DP-T1-RE3.pdf
- Description:
- N-CHANNEL 100 V (D-S) MOSFET POW
- Quantity:
- Payment:
- Shipping:
Inventory:5,851
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIR5112DP-T1-RE3 from Vishay Siliconix is an N-channel 100 V TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, with RDS(on) = 0.0149 Ω @ VGS = 10 V, Qg = 8 nC (typ.), and 42.6 A continuous drain current at TC = 25 °C - optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIR5112DP-T1-RE3 datasheet, SIR5112DP-T1-RE3 pinout, SIR5112DP-T1-RE3 application, or SIR5112DP-T1-RE3 equivalent, this page delivers verified thermal resistance (RthJC = 1.8 °C/W), body diode recovery (trr = 39 ns), avalanche rating (EAS = 20 mJ), gate resistance (Rg = 0.4–1.7 Ω), and leadless PowerPAK SO-8 layout compatibility.
Technical Context
This MOSFET employs trench-based silicon architecture to minimize RDS(on) × Qg and RDS(on) × Qoss figures of merit, enabling high-frequency switching with low conduction and switching losses. Its gate threshold voltage (VGS(th) = 2–4 V) supports standard 5 V and 10 V gate drive systems.
The device features 100 % Rg and UIS tested units, a robust body diode with VSD = 0.78–1.1 V @ IS = 5 A, and thermal design support via validated junction-to-case (1.8 °C/W) and junction-to-ambient (20–25 °C/W) resistances under defined PCB mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports primary-side switching in offline and high-voltage DC/DC topologies up to 80 V bus. |
| RDS(on) max @ 10 V | 0.0149 Ω - enables ≤ 6.3 W conduction loss at 32 A, critical for thermally constrained power stages. |
| Qg typ. | 8 nC - reduces gate drive power and enables efficient operation above 500 kHz in hard-switched converters. |
| ID cont. @ TC = 25 °C | 42.6 A - supports high-current output rails in server VRMs and telecom power supplies without paralleling. |
| RthJC max. | 2.2 °C/W - allows direct heatsink attachment to exposed drain pad for thermal management in compact layouts. |
| trr typ. | 39 ns - minimizes reverse recovery loss and EMI in synchronous rectifier applications with fast di/dt. |
| EAS | 20 mJ - provides single-pulse avalanche ruggedness for inductive load switching and transient overvoltage events. |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed drain thermal pad). Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H); drain pad occupies bottom-side center area for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt operation. |
| 5 | Gate (G) | Single gate input with Rg = 0.4–1.7 Ω - enables stable gate control without external series resistance in most designs. |
| 6, 7, 8 | Drain (D) | Three drain terminals + large bottom-side copper pad provide low-inductance, high-current path and thermal conduction to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V process | Delivers industry-leading RDS(on) × Qg FOM of ~0.12 Ω·nC, reducing total switching loss by ≥15 % vs. prior-gen equivalents. |
| 100 % Rg and UIS tested | Ensures gate resistance consistency and unclamped inductive switching reliability across production lots - critical for automotive and industrial power stages. |
| Optimized RDS(on) × Qoss | Minimizes capacitive turn-off loss and improves light-load efficiency in resonant and ZVS converter topologies. |
| Exposed drain thermal pad | Enables <1.8 °C/W junction-to-case thermal path when soldered to 1"×1" FR4 with 2 oz Cu, supporting >40 W dissipation in compact footprints. |
| Body diode trr / Qrr tuned | 39 ns trr and 39 nC Qrr reduce cross-conduction loss and EMI generation during synchronous rectifier dead-time transitions. |
Applications
| Server VRM Output Stage | Telecom DC/DC Brick |
|---|---|
|
Use Scenario: High-current, high-frequency buck converter delivering 12 V @ 60 A to CPU/GPU cores in datacenter servers. IC Role / Device Role: Low-side synchronous rectifier switch replacing Schottky diodes to reduce conduction loss and improve full-load efficiency. Use Value: 0.0149 Ω RDS(on) cuts I²R loss by >50 % vs. 40 V MOSFETs, enabling >95 % peak efficiency at 500 kHz switching. |
Use Scenario: 48 V input to 12 V isolated DC/DC module in 5G base station power distribution. IC Role / Device Role: Secondary-side synchronous rectifier in forward or LLC topology, operating with 10 V gate drive. Use Value: 39 ns body diode trr prevents shoot-through during zero-voltage switching transitions, improving reliability and reducing snubber losses. |
| Industrial Motor Drive Inverter | EV Onboard Charger PFC Stage |
|
Use Scenario: 24–48 V three-phase inverter driving BLDC motors in automated guided vehicles (AGVs). IC Role / Device Role: High-side and low-side switching element in half-bridge legs, driven by isolated gate drivers. Use Value: 100 V VDS rating accommodates 60 V bus transients; 20 mJ EAS withstands motor back-EMF spikes without clamping. |
Use Scenario: Boost switch in active PFC stage of 3.3 kW onboard charger, switching at 100 kHz with 400 V DC link. IC Role / Device Role: Primary switching transistor handling 12 A RMS current and high dv/dt stress. Use Value: RDS(on) × Qoss optimization lowers turn-off loss at high voltage, improving PFC efficiency by 0.4–0.6 % at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP040N10N5 | RDS(on) = 0.004 Ω @ 10 V (lower), Qg = 24 nC (higher), TO-220FP package | Higher thermal mass but larger footprint; requires heatsink mounting; not suitable for ultra-thin board designs. | Prefer when higher current (>60 A) and lower RDS(on) outweigh size and switching speed constraints. |
| ON Semiconductor NTMFS5C428N | RDS(on) = 0.0155 Ω @ 10 V, Qg = 9.5 nC, same PowerSO-8 package, rated for 150 °C TJ | Identical footprint and pinout; slightly higher Qg and lower avalanche rating (EAS = 12 mJ). | Drop-in replacement where extended temperature operation is required, but verify avalanche margin in inductive loads. |
Compared with IPP040N10N5 and NTMFS5C428N, the SIR5112DP-T1-RE3 offers the best balance of low Qg, tight RDS(on) tolerance, and proven 20 mJ avalanche capability in a space-constrained PowerPAK SO-8 - making it optimal for high-frequency, high-density power conversion where thermal and EMI performance are prioritized.
Availability
SIR5112DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC bricks, and industrial motor drives requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for SIR5112DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SIR5112DP-T1-RE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in datacenter, telecom, and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SIR5112DP-T1-RE3 at case temperature of 70 °C?
The SIR5112DP-T1-RE3 supports 34 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias under the exposed drain pad to maintain junction temperature ≤150 °C. Derating curves in the datasheet confirm linear reduction from 42.6 A at 25 °C to 34 A at 70 °C.
Does SIR5112DP-T1-RE3 have a specified gate charge value at 7.5 V gate drive?
Yes, the SIR5112DP-T1-RE3 has a typical total gate charge (Qg) of 8 nC at VGS = 7.5 V, VDS = 50 V, and ID = 10 A. This value is confirmed in the "Dynamic" section of the datasheet and is critical for calculating gate driver power and switching timing in 5 V logic-level systems.
Is SIR5112DP-T1-RE3 suitable for synchronous rectification in LLC resonant converters?
Yes, the SIR5112DP-T1-RE3 is well-suited for synchronous rectification in LLC resonant converters due to its low Qoss (43 pC), fast body diode recovery (trr = 39 ns), and low RDS(on). These parameters minimize reverse recovery loss and conduction loss during zero-current switching transitions, directly improving light-load and full-load efficiency.
What is the thermal resistance from junction to ambient (RthJA) for SIR5112DP-T1-RE3 under standard test conditions?
The SIR5112DP-T1-RE3 has a typical RthJA of 20 °C/W and a maximum of 25 °C/W when mounted on a 1" × 1" FR4 board with 2 oz copper, per the datasheet's thermal resistance ratings. This value applies to steady-state conditions with natural convection and is used to estimate junction temperature rise under given power dissipation.
Does SIR5112DP-T1-RE3 require special rework considerations due to its leadless PowerPAK SO-8 package?
Yes, the SIR5112DP-T1-RE3 uses a leadless PowerPAK SO-8 package with an exposed copper drain pad. Manual soldering with a soldering iron is not recommended; rework must use controlled thermal profiles per Vishay document 73257. The exposed copper tip does not require a visible solder fillet - reliable interconnection is achieved through bottom-side solder wetting to the thermal pad.
SIR5112DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.6A (Ta), 42.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 790 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 56.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR5112DP-T1-RE3 FAQ
1.How can I place an order for SIR5112DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR5112DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR5112DP-T1-RE3 reliable?
The price and inventory of SIR5112DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR5112DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIR5112DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR5112DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR5112DP-T1-RE3?
SIR5112DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR5112DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR5112DP-T1-RE3?
For technical support, including SIR5112DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR5112DP-T1-RE3 requirements.
6.How does Aetrix verify that SIR5112DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIR5112DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR5112DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIR5112DP-T1-RE3?
All SIR5112DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR5112DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR5112DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIR5112DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIR5112DP-T1-RE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
