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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR516DP-T1-BE3

Name: SIR516DP-T1-BE3
Brand: Vishay Siliconix
SKU: SIR516DP-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR516DP-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR516DP-T1-BE3.pdf

Description:: N-CHANNEL 100 V (D-S) MOSFET 150

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Product details

Overview

SIR516DP-T1-BE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 0.008 Ω at V_GS = 10 V, Q_g = 17.7 nC (typ.), and continuous drain current I_D = 63.7 A at T_C = 25 °C. It serves as a primary-side switch or synchronous rectifier in high-efficiency DC/DC converters.

For engineers reviewing the SIR516DP-T1-BE3 datasheet, SIR516DP-T1-BE3 pinout, SIR516DP-T1-BE3 application, or SIR516DP-T1-BE3 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit, 100 % R_g and UIS testing, and optimized R_DS(on) × Q_oss for fast-switching power stages.

Technical Context

This MOSFET employs Vishay's TrenchFET® Gen V process to achieve ultra-low conduction and switching losses. Its gate charge profile-Q_g = 17.7 nC (V_GS = 7.5 V), Q_gd = 1.6 nC, and Q_oss = 54 pC-supports high-frequency operation in hard-switched topologies.

The device features a robust body diode with t_rr = 42 ns (typ.) and Q_rr = 45 nC (typ.) at I_F = 10 A, enabling efficient reverse recovery in synchronous rectification. Thermal performance is characterized by R_thJC = 1.4 °C/W (typ.) and R_thJA = 20 °C/W (t ≤ 10 s).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in 48 V input DC/DC and offline auxiliary supplies
R_DS(on) max @ 10 V	0.008 Ω - enables <1 W conduction loss at 35 A, critical for high-current POL converters
Q_g typ. @ 7.5 V	17.7 nC - reduces gate drive power and allows use with standard 1-A peak drivers
I_D continuous @ T_C = 25 °C	63.7 A - supports high-power density designs without forced air cooling
R_thJC typical	1.4 °C/W - permits >50 W dissipation with minimal heatsink when mounted on copper plane
Body diode V_SD	0.77 V (typ., I_S = 5 A) - lowers forward drop in OR-ing and hot-swap applications
E_AS	45 mJ - withstands single-pulse avalanche stress in inductive load switching

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed-drain thermal pad), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), JEDEC-compliant footprint with bottom-side thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection; pins 1–4 are internally bonded and electrically tied
5	Gate (G)	Control terminal; requires <1.7 Ω gate resistance for optimal switching speed and ringing control
6, 7, 8	Drain (D)	Power output node; pins 6–8 connect to exposed copper thermal pad for low-inductance, high-current path

Key Features

Feature	Design Value
TrenchFET® Gen V process	Delivers industry-leading R_DS(on) × Q_g FOM of ~0.14 Ω·nC, reducing total switching + conduction loss
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching
Optimized R_DS(on) × Q_oss	Minimizes capacitive turn-off loss and improves efficiency in high-frequency ZVS/ZCS circuits
Exposed-drain thermal pad	Enables direct PCB copper pour attachment for R_thJC = 1.4 °C/W and reliable 71.4 W power handling
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc. 99912

Applications

Server VRM	Industrial DC/DC
Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 300 A. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 500 kHz–1 MHz with synchronous rectification. Use Value: Low R_DS(on) (0.008 Ω) and Q_g (17.7 nC) reduce both conduction loss and gate drive loss, improving full-load efficiency by ≥0.5 % vs. prior-gen MOSFETs.	Use Scenario: 48 V-to-12 V isolated DC/DC converter in programmable logic controller (PLC) power supply. IC Role / Device Role / Timing Role: Active clamp forward or LLC resonant converter primary switch. Use Value: 100 V rating and 45 mJ E_AS ensure reliability during transient overvoltage events common in industrial bus environments.
OR-ing Controller	Battery Protection
Use Scenario: Redundant 24 V power input system in telecom shelf with automatic failover. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET used as ideal diode replacement. Use Value: Low V_SD (0.77 V typ.) and fast t_rr (42 ns) minimize forward drop and reverse recovery loss, reducing heat generation vs. Schottky diodes.	Use Scenario: Cell-balancing and charge/discharge path control in 3S–4S Li-ion battery packs for medical portable devices. IC Role / Device Role / Timing Role: High-side load switch in battery management system (BMS) protection circuitry. Use Value: 63.7 A I_D rating and 100 % UIS testing support safe interruption of short-circuit currents up to 200 A (I_DM).

Server VRM

Industrial DC/DC

Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 300 A.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 500 kHz–1 MHz with synchronous rectification.

Use Value: Low R_DS(on) (0.008 Ω) and Q_g (17.7 nC) reduce both conduction loss and gate drive loss, improving full-load efficiency by ≥0.5 % vs. prior-gen MOSFETs.

Use Scenario: 48 V-to-12 V isolated DC/DC converter in programmable logic controller (PLC) power supply.

IC Role / Device Role / Timing Role: Active clamp forward or LLC resonant converter primary switch.

Use Value: 100 V rating and 45 mJ E_AS ensure reliability during transient overvoltage events common in industrial bus environments.

OR-ing Controller

Battery Protection

Use Scenario: Redundant 24 V power input system in telecom shelf with automatic failover.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET used as ideal diode replacement.

Use Value: Low V_SD (0.77 V typ.) and fast t_rr (42 ns) minimize forward drop and reverse recovery loss, reducing heat generation vs. Schottky diodes.

Use Scenario: Cell-balancing and charge/discharge path control in 3S–4S Li-ion battery packs for medical portable devices.

IC Role / Device Role / Timing Role: High-side load switch in battery management system (BMS) protection circuitry.

Use Value: 63.7 A I_D rating and 100 % UIS testing support safe interruption of short-circuit currents up to 200 A (I_DM).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-BE3	R_DS(on) = 0.0055 Ω @ 10 V; Q_g = 26.5 nC; same PowerPAK SO-8 package	Lower R_DS(on) but higher Q_g; better for low-frequency, high-current apps; less suitable for >1 MHz switching	Select when conduction loss dominates and gate drive capability supports higher Q_g.
IRF7470PBF	R_DS(on) = 0.0095 Ω @ 10 V; Q_g = 14.5 nC; SO-8 (leaded) package; R_thJA = 62 °C/W	Higher R_DS(on), lower Q_g, and inferior thermal performance; no exposed-drain pad	Consider only if leaded SO-8 is required and thermal budget allows higher junction temperature rise.

Compared with SiR626DP-T1-BE3 and IRF7470PBF, the SIR516DP-T1-BE3 delivers the best balance of low R_DS(on), moderate Q_g, and superior thermal resistance-making it optimal for compact, high-frequency, high-current DC/DC stages where board space and thermal management are constrained.

Availability

SIR516DP-T1-BE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, OR-ing systems, and battery protection circuits requiring stable component supply and long-term production continuity.

Supply support for SIR516DP-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The PowerPAK® SO-8 TrenchFET® Gen V series-including SIR516DP-T1-BE3-is engineered for high-density, high-efficiency power conversion in computing, industrial, and telecom infrastructure applications.

FAQ

What is the maximum continuous drain current rating for SIR516DP-T1-BE3 at case temperature of 70 °C?

The SIR516DP-T1-BE3 supports 51 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8 package under sustained power dissipation; actual usable current depends on PCB copper area, airflow, and ambient conditions. The SIR516DP-T1-BE3 maintains R_DS(on) stability across this range due to its low R_DS(on) temperature coefficient.

Does SIR516DP-T1-BE3 have a fully rated avalanche capability, and what is its single-pulse rating?

Yes, the SIR516DP-T1-BE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for single-pulse avalanche energy E_AS = 45 mJ at I_AS = 30 A and L = 0.1 mH. This ensures robustness during inductive turn-off transients in motor drives and DC/DC converters. The SIR516DP-T1-BE3 datasheet confirms this is a guaranteed production test-not just a design limit.

What is the gate threshold voltage range for SIR516DP-T1-BE3, and how does it behave with temperature?

The SIR516DP-T1-BE3 has a gate-source threshold voltage V_GS(th) of 2.0 V to 4.0 V at T_J = 25 °C and I_D = 250 μA. Its V_GS(th) temperature coefficient is −6.9 mV/°C, meaning threshold decreases linearly with rising junction temperature-critical for ensuring turn-on margin in high-temp environments. This behavior is confirmed in the "Specifications" table and "Typical Characteristics" plots of the SIR516DP-T1-BE3 datasheet.

Can SIR516DP-T1-BE3 be used in synchronous rectification applications, and what body diode parameters support this?

Yes, the SIR516DP-T1-BE3 is qualified for synchronous rectification, supported by its low body diode forward voltage V_SD = 0.77 V (typ., I_S = 5 A, V_GS = 0 V) and fast reverse recovery characteristics: t_rr = 42 ns (typ.) and Q_rr = 45 nC (typ.) at I_F = 10 A. These values-documented in the "Drain-Source Body Diode Characteristics" section-reduce conduction and recovery losses versus Schottky alternatives in 100 kHz–2 MHz LLC and phase-shifted full-bridge topologies.

What is the recommended soldering profile and rework guidance for SIR516DP-T1-BE3?

The SIR516DP-T1-BE3 uses a leadless PowerPAK® SO-8 package with exposed copper drain pad; Vishay specifies peak reflow temperature of 260 °C (per JEDEC J-STD-020) and explicitly advises against manual soldering with an iron due to thermal mass and solder fillet uncertainty at the singulated copper edge. Rework requires specialized hot-air or infrared tools. Full details are in document 73257 referenced in the SIR516DP-T1-BE3 datasheet.

SIR516DP-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 16.8A (Ta), 63.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1920 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 71.4W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR516DP-T1-BE3 FAQ

1.How can I place an order for SIR516DP-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR516DP-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR516DP-T1-BE3 reliable?

The price and inventory of SIR516DP-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR516DP-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SIR516DP-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR516DP-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR516DP-T1-BE3?

SIR516DP-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR516DP-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR516DP-T1-BE3?

For technical support, including SIR516DP-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR516DP-T1-BE3 requirements.

6.How does Aetrix verify that SIR516DP-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SIR516DP-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR516DP-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SIR516DP-T1-BE3?

All SIR516DP-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR516DP-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR516DP-T1-BE3 part is unused and in its original packaging.

Return procedure for SIR516DP-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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