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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR5808DP-T1-RE3

Name: SIR5808DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR5808DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR5808DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR5808DP-T1-RE3.pdf

Description:: N-CHANNEL 80 V (D-S) MOSFET POWE

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Product details

Overview

SIR5808DP-T1-RE3 from Vishay Siliconix is an N-channel 80 V TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 7.35 mΩ at V_GS = 10 V, Q_g = 11.8 nC (typ.), and continuous drain current of 66.8 A at T_C = 25 °C. It serves as a primary-side switch or synchronous rectifier in high-efficiency DC/DC converters and OR-ing circuits.

For engineers reviewing the SIR5808DP-T1-RE3 datasheet, SIR5808DP-T1-RE3 pinout, SIR5808DP-T1-RE3 application, or SIR5808DP-T1-RE3 equivalent, key selection criteria include its low R_DS(on) × Q_g and R_DS(on) × Q_oss figures-of-merit, 100% R_g and UIS testing, and thermal performance with R_thJC = 1.5 °C/W (typ.) for high-power density designs.

Technical Context

This MOSFET employs Vishay's TrenchFET® Gen V process optimized for switching efficiency in hard-switched and synchronous rectification topologies. Its gate charge profile supports fast turn-on/turn-off with t_d(on) = 10 ns and t_f = 5 ns (V_GEN = 10 V), while low C_iss = 1210 pF and C_oss = 510 pF reduce capacitive losses at 40 V V_DS.

The device integrates a robust body diode with V_SD = 0.76 V (typ.) at I_S = 5 A and t_rr = 45 ns (typ.), enabling reliable reverse recovery in bidirectional power paths. Thermal design is supported by a leadless PowerPAK SO-8 package with exposed drain copper on the bottom side and validated R_thJC = 1.5 °C/W (typ.) for heatsink-coupled layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum drain-source blocking voltage for primary-side switching in 48 V input DC/DC and telecom power supplies.
R_DS(on) max @ 10 V	7.35 mΩ - Enables <1 W conduction loss at 37 A RMS in high-current POL converters.
Q_g typ.	11.8 nC - Low gate charge reduces driver power and enables efficient operation with standard gate drivers.
I_D cont. @ T_C = 25 °C	66.8 A - Supports high-current single-phase buck or half-bridge stages without paralleling.
R_thJC max	2.9 °C/W - Confirms thermal path integrity from junction to heatsink for forced-air or passive-cooled industrial modules.
Body diode V_SD	0.76 V (typ.) - Minimizes forward conduction loss during synchronous rectification dead-time intervals.
E_AS	31.25 mJ - Validates ruggedness against inductive switching energy in motor drive H-bridges.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, exposed drain pad on bottom side; dimensions 6.15 mm × 5.15 mm × 1.04 mm).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connected to large bottom-side copper pad for optimal thermal and current handling.
G (Pin 1 top-side marking)	Gate	Single gate terminal located at corner; requires controlled trace routing to minimize ringing in MHz-switching converters.

Key Features

Feature	Design Value
TrenchFET® Gen V process	Delivers industry-leading R_DS(on) × Q_g = 87 mΩ·nC, reducing total switching + conduction loss in 300–500 kHz SMPS.
100% R_g tested	Ensures gate resistance ≤ 1.8 Ω, guaranteeing consistent turn-on speed and driver compatibility across production lots.
100% UIS tested	Validates unclamped inductive switching robustness up to I_AS = 25 A and E_AS = 31.25 mJ for motor control reliability.
Low Q_oss	48 nC (typ.) at V_DS = 40 V - minimizes turn-off loss and improves light-load efficiency in resonant LLC converters.
Exposed drain thermal pad	Enables direct thermal coupling to PCB copper or heatsink, achieving R_thJA = 20 °C/W (typ.) on 1" × 1" FR4 board.

Applications

Synchronous Rectification	Primary-Side Switch
Use Scenario: Secondary-side rectification in isolated 48 V–12 V DC/DC converters for server VRMs and telecom PSUs. IC Role / Device Role / Timing Role: N-channel MOSFET replacing Schottky diode, driven synchronously with primary-side controller timing signals. Use Value: Reduces conduction loss by >50% vs. 40 V Schottky, enabling >96% peak efficiency at 60 A output.	Use Scenario: High-side switch in non-isolated buck converters for FPGA core voltage regulation (0.8–1.2 V @ 60 A). IC Role / Device Role / Timing Role: Main power switch operating at 300–600 kHz with gate driver-controlled turn-on/turn-off timing. Use Value: Low R_DS(on) × Q_g minimizes combined switching and conduction loss, supporting compact 2-layer PCB layout.
OR-ing / Hot Swap	Battery Management System
Use Scenario: Back-to-back configuration for redundant 12 V/24 V power rails in industrial PLCs and network switches. IC Role / Device Role / Timing Role: Bidirectional current-blocking MOSFET with body diode used for forward conduction and gate-controlled reverse blocking. Use Value: V_SD = 0.76 V (typ.) and t_rr = 45 ns (typ.) ensure low-loss forward path and fast reverse recovery during rail switchover.	Use Scenario: Charge/discharge path switch in 3–4 cell Li-ion battery packs for portable medical devices and power tools. IC Role / Device Role / Timing Role: High-current load switch controlling battery connection to system load, with overcurrent protection via external sense resistor. Use Value: 66.8 A continuous rating and 150 A pulsed capability support high-power discharge pulses without derating.

Synchronous Rectification

Primary-Side Switch

Use Scenario: Secondary-side rectification in isolated 48 V–12 V DC/DC converters for server VRMs and telecom PSUs.

IC Role / Device Role / Timing Role: N-channel MOSFET replacing Schottky diode, driven synchronously with primary-side controller timing signals.

Use Value: Reduces conduction loss by >50% vs. 40 V Schottky, enabling >96% peak efficiency at 60 A output.

Use Scenario: High-side switch in non-isolated buck converters for FPGA core voltage regulation (0.8–1.2 V @ 60 A).

IC Role / Device Role / Timing Role: Main power switch operating at 300–600 kHz with gate driver-controlled turn-on/turn-off timing.

Use Value: Low R_DS(on) × Q_g minimizes combined switching and conduction loss, supporting compact 2-layer PCB layout.

OR-ing / Hot Swap

Battery Management System

Use Scenario: Back-to-back configuration for redundant 12 V/24 V power rails in industrial PLCs and network switches.

IC Role / Device Role / Timing Role: Bidirectional current-blocking MOSFET with body diode used for forward conduction and gate-controlled reverse blocking.

Use Value: V_SD = 0.76 V (typ.) and t_rr = 45 ns (typ.) ensure low-loss forward path and fast reverse recovery during rail switchover.

Use Scenario: Charge/discharge path switch in 3–4 cell Li-ion battery packs for portable medical devices and power tools.

IC Role / Device Role / Timing Role: High-current load switch controlling battery connection to system load, with overcurrent protection via external sense resistor.

Use Value: 66.8 A continuous rating and 150 A pulsed capability support high-power discharge pulses without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 8.0 mΩ @ 10 V; Q_g = 13.5 nC; PowerSO-8 package with different pinout (G-D-S layout vs. S-S-S-S/D-D-D-D).	Higher R_DS(on) and gate charge increase conduction and switching loss; requires PCB layout revision due to non-compatible pinout.	Select only if legacy IRF6642 footprint is fixed and efficiency loss <3% is acceptable.
DMTH8008LPSQ-13	R_DS(on) = 7.5 mΩ @ 10 V; Q_g = 12.5 nC; same PowerPAK SO-8 package and pinout; AEC-Q101 qualified.	Identical mechanical interface and electrical specs; automotive qualification adds cost but no performance benefit for industrial use.	Prefer SIR5808DP-T1-RE3 for cost-sensitive industrial DC/DC where AEC-Q101 is unnecessary.

Compared with IRF6642TRPBF, SIR5808DP-T1-RE3 offers lower R_DS(on) and gate charge in a compatible package, enabling higher efficiency without layout change; versus DMTH8008LPSQ-13, it provides identical performance at lower cost without automotive qualification overhead.

Availability

SIR5808DP-T1-RE3 is available at Aetrix Electronics and suitable for DC/DC converters, OR-ing circuits, and motor drive control requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIR5808DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SIR5808DP-T1-RE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered for ultra-low FOM in high-frequency, high-current power conversion systems including telecom, computing, and industrial motor drives.

FAQ

What is the maximum continuous drain current rating for SIR5808DP-T1-RE3 at case temperature of 70 °C?

The SIR5808DP-T1-RE3 supports 53.5 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state heatsink conditions and must be verified against actual board-level thermal resistance in the target application layout.

Does SIR5808DP-T1-RE3 have avalanche capability, and what is its rated single-pulse energy?

Yes, the SIR5808DP-T1-RE3 is 100% tested for unclamped inductive switching (UIS) and rated for single-pulse avalanche energy E_AS = 31.25 mJ at I_AS = 25 A and L = 0.1 mH. This ensures robustness against transient inductive kickback in motor drive and relay-driving circuits.

What is the gate threshold voltage range for SIR5808DP-T1-RE3, and how does it affect gate drive design?

The SIR5808DP-T1-RE3 has a gate-source threshold voltage V_GS(th) of 2 V to 4 V at I_D = 250 μA. This relatively low and tight range allows reliable turn-on with 5 V logic-level gate drivers while maintaining noise immunity; however, full enhancement requires ≥7.5 V to achieve R_DS(on) ≤ 11 mΩ.

Is SIR5808DP-T1-RE3 suitable for synchronous rectification in LLC resonant converters, and why?

Yes, the SIR5808DP-T1-RE3 is well-suited for LLC synchronous rectification due to its low Q_oss = 48 nC (typ.) and fast body diode recovery (t_rr = 45 ns typ.), which minimize turn-off loss and reverse recovery spikes. Its low R_DS(on) also sustains high efficiency at light loads where diode conduction dominates.

What is the thermal resistance from junction to case (R_thJC) for SIR5808DP-T1-RE3, and how is it measured?

The SIR5808DP-T1-RE3 has a typical junction-to-case thermal resistance R_thJC of 1.5 °C/W, measured from the silicon die to the exposed drain pad on the bottom of the PowerPAK SO-8 package. This value assumes direct thermal contact between the drain pad and a heatsink or thick copper plane, and is critical for calculating maximum allowable power dissipation in thermally constrained designs.

SIR5808DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 18.8A (Ta), 66.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 157mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1210 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR5808DP-T1-RE3 FAQ

1.How can I place an order for SIR5808DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR5808DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR5808DP-T1-RE3 reliable?

The price and inventory of SIR5808DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR5808DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR5808DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR5808DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR5808DP-T1-RE3?

SIR5808DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR5808DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR5808DP-T1-RE3?

For technical support, including SIR5808DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR5808DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR5808DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR5808DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR5808DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR5808DP-T1-RE3?

All SIR5808DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR5808DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR5808DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR5808DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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