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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR580DP-T1-BE3

Name: SIR580DP-T1-BE3
Brand: Vishay Siliconix
SKU: SIR580DP-T1-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR580DP-T1-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR580DP-T1-BE3.pdf

Description:: N-CHANNEL 80 V (D-S) MOSFET 150C

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Product details

Overview

SIR580DP-T1-BE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 2.7 mΩ at V_GS = 10 V, Q_g = 37.7 nC (typ.), and continuous drain current I_D = 146 A (T_C = 25 °C). It serves as a high-efficiency primary-side switch or synchronous rectifier in high-density DC/DC converters.

For engineers reviewing the SIR580DP-T1-BE3 datasheet, SIR580DP-T1-BE3 pinout, SIR580DP-T1-BE3 application, or SIR580DP-T1-BE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure-of-merit, 100% R_g and UIS testing, and suitability for OR-ing, hot-swap, and battery management systems requiring robust avalanche energy handling (E_AS = 125 mJ).

Technical Context

This MOSFET employs TrenchFET® Gen V silicon technology optimized for minimal conduction and switching losses. Its gate charge profile supports fast turn-on/turn-off with t_d(on) = 18 ns and t_d(off) = 28 ns (V_GEN = 10 V), while Crss = 12 pF ensures stable operation under high dv/dt conditions.

The device features a fully rated body diode with V_SD = 0.76 V (typ.) at I_S = 5 A and t_rr = 56 ns (typ.), enabling efficient reverse recovery in synchronous rectification. Thermal design is supported by R_thJC = 0.9 °C/W (typ.) and R_thJA = 15 °C/W (t ≤ 10 s), validated on 1" × 1" FR4 board.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum drain-source blocking voltage for primary-side switch applications up to 48 V input rails with margin.
R_DS(on) max. @ V_GS = 10 V	2.7 mΩ - Enables <1 W conduction loss at 20 A, critical for high-current power stages.
Q_g typ.	37.7 nC - Low gate charge reduces driver power demand and improves efficiency in high-frequency (>500 kHz) converters.
I_D continuous @ T_C = 25 °C	146 A - Supports high-power density designs without external heatsinking when mounted on copper-clad PCBs.
E_AS	125 mJ - Rated single-pulse avalanche energy allows reliable operation during transient overvoltage events.
R_thJC typical	0.9 °C/W - Enables direct thermal coupling to heatsinks or metal-core PCBs for sustained >100 W dissipation.
V_GS(th)	2–4 V - Gate threshold compatible with standard 3.3 V and 5 V logic-level drivers without level-shifting.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, surface-mount), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), with exposed drain paddle on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching.
5	Gate (G)	Single gate input with R_g = 0.4–1.9 Ω (typ./max) - enables precise gate drive tuning and EMI control.
6, 7, 8	Drain (D)	Three drain terminals connected to exposed copper paddle - provides low-inductance, high-current path to PCB ground plane or heatsink.

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers industry-leading R_DS(on) × Q_g and R_DS(on) × Q_oss FOMs for minimized total power loss in hard-switched topologies.
100% R_g and UIS tested	Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress in motor drive and converter applications.
Optimized body diode	t_rr = 56 ns (typ.) and Q_rr = 67 nC (typ.) reduce reverse recovery losses and EMI in synchronous rectification.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C, suitable for automotive and industrial end-equipment.
PowerPAK® SO-8 package	Thermally enhanced leadless construction achieves 2× power density vs. standard SO-8, with R_thJC 5× lower than DPAK.

Applications

Server VRM / POL Converter	Industrial DC/DC Module
Use Scenario: Point-of-load regulation in 48 V server backplanes delivering up to 200 A per phase. IC Role / Device Role: Primary-side high-side switch in multiphase buck converter topology. Use Value: 2.7 mΩ R_DS(on) minimizes conduction loss at 146 A, while 37.7 nC Q_g enables >1 MHz operation with low driver loss.	Use Scenario: Isolated 24 V input to 12 V/30 A output DC/DC module for PLC I/O power supplies. IC Role / Device Role: Secondary-side synchronous rectifier in forward or LLC resonant converter. Use Value: Low V_SD (0.76 V typ.) and fast t_rr (56 ns) cut rectifier losses by >40% vs. Schottky diodes, improving full-load efficiency to >95%.
Hot-Swap Controller Interface	Battery Protection Circuit
Use Scenario: Inrush current limiting and fault isolation in 12–48 V telecom shelf power distribution. IC Role / Device Role: OR-ing and hot-swap switch controlled by dedicated hot-swap IC (e.g., LTC4215). Use Value: 125 mJ E_AS rating withstands load-dump transients; 146 A I_D supports >1 kW system-level power delivery.	Use Scenario: Cell-balancing and discharge path control in 16S Li-ion battery packs for energy storage systems. IC Role / Device Role: High-current discharge FET in active protection IC (e.g., BQ769x2) reference design. Use Value: 80 V V_DS accommodates full pack voltage (up to ~65 V), while 100% UIS test ensures reliability during short-circuit events.

Server VRM / POL Converter

Industrial DC/DC Module

Use Scenario: Point-of-load regulation in 48 V server backplanes delivering up to 200 A per phase.

IC Role / Device Role: Primary-side high-side switch in multiphase buck converter topology.

Use Value: 2.7 mΩ R_DS(on) minimizes conduction loss at 146 A, while 37.7 nC Q_g enables >1 MHz operation with low driver loss.

Use Scenario: Isolated 24 V input to 12 V/30 A output DC/DC module for PLC I/O power supplies.

IC Role / Device Role: Secondary-side synchronous rectifier in forward or LLC resonant converter.

Use Value: Low V_SD (0.76 V typ.) and fast t_rr (56 ns) cut rectifier losses by >40% vs. Schottky diodes, improving full-load efficiency to >95%.

Hot-Swap Controller Interface

Battery Protection Circuit

Use Scenario: Inrush current limiting and fault isolation in 12–48 V telecom shelf power distribution.

IC Role / Device Role: OR-ing and hot-swap switch controlled by dedicated hot-swap IC (e.g., LTC4215).

Use Value: 125 mJ E_AS rating withstands load-dump transients; 146 A I_D supports >1 kW system-level power delivery.

Use Scenario: Cell-balancing and discharge path control in 16S Li-ion battery packs for energy storage systems.

IC Role / Device Role: High-current discharge FET in active protection IC (e.g., BQ769x2) reference design.

Use Value: 80 V V_DS accommodates full pack voltage (up to ~65 V), while 100% UIS test ensures reliability during short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1407PBF	R_DS(on) = 4.8 mΩ @ 10 V; Q_g = 62 nC; TO-220 package; R_thJC = 1.2 °C/W	Higher conduction loss and slower switching; requires heatsink for >50 A operation	Select when cost sensitivity outweighs efficiency goals and board space permits through-hole mounting.
SiR626DP-T1-BE3	R_DS(on) = 1.8 mΩ @ 10 V; Q_g = 52 nC; same PowerPAK SO-8 package; 60 V V_DS	Lower voltage rating limits use to ≤36 V systems; superior R_DS(on) benefits ultra-high-current <40 V applications	Choose for 12–36 V battery-powered equipment where lowest possible conduction loss is critical.

Compared with IRF1407PBF, SIR580DP-T1-BE3 delivers 44% lower R_DS(on) and 39% less Q_g in a surface-mount package with 75% lower thermal resistance - enabling higher power density and efficiency. Against SiR626DP-T1-BE3, it trades 20 V lower voltage headroom for proven 80 V capability in 48 V industrial and telecom systems.

Availability

SIR580DP-T1-BE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, and battery protection circuits requiring stable component supply across multi-year production cycles.

Supply support for SIR580DP-T1-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIR580DP-T1-BE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-efficiency, high-current switching in data center, industrial, and telecom power systems where thermal performance and reliability are critical.

FAQ

What is the maximum continuous drain current rating for SIR580DP-T1-BE3 at case temperature of 70 °C?

The SIR580DP-T1-BE3 supports 117 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8 package under sustained high-power operation and must be verified against actual board layout and airflow conditions in the final design.

Does SIR580DP-T1-BE3 have a fully rated body diode suitable for synchronous rectification?

Yes, the SIR580DP-T1-BE3 features a fully characterized body diode with V_SD = 0.76 V (typ.) at I_S = 5 A and t_rr = 56 ns (typ.) at T_J = 25 °C. These parameters are measured and guaranteed, making SIR580DP-T1-BE3 suitable for synchronous rectification in DC/DC converters without external diodes.

What is the gate threshold voltage range for SIR580DP-T1-BE3, and how does it affect drive compatibility?

The SIR580DP-T1-BE3 has a gate-source threshold voltage V_GS(th) of 2–4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 3.3 V and 5 V logic-level gate drivers, eliminating the need for gate voltage boosting in most medium-voltage power supply designs.

How is thermal performance characterized for SIR580DP-T1-BE3, and what does R_thJC = 0.9 °C/W mean in practice?

The SIR580DP-T1-BE3 has a typical junction-to-case thermal resistance R_thJC of 0.9 °C/W, measured from die to the exposed drain paddle. In practice, this means that with 100 W power dissipation and a heatsink at 25 °C, the junction temperature rises only ~90 °C above ambient - enabling high-power operation without forced air cooling when properly mounted.

Is SIR580DP-T1-BE3 suitable for avalanche-rated applications, and what is its single-pulse avalanche energy rating?

Yes, the SIR580DP-T1-BE3 is 100% tested for unclamped inductive switching (UIS) and rated for 125 mJ single-pulse avalanche energy (E_AS) at T_J = 25 °C. This specification validates its robustness in flyback, LLC, and motor drive circuits where inductive energy must be safely absorbed during switching transitions.

SIR580DP-T1-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 35.8A (Ta), 146A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 76 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR580DP-T1-BE3 FAQ

1.How can I place an order for SIR580DP-T1-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR580DP-T1-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR580DP-T1-BE3 reliable?

The price and inventory of SIR580DP-T1-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR580DP-T1-BE3 is usually 5 days.

3.What payment methods are accepted for SIR580DP-T1-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR580DP-T1-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR580DP-T1-BE3?

SIR580DP-T1-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR580DP-T1-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR580DP-T1-BE3?

For technical support, including SIR580DP-T1-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR580DP-T1-BE3 requirements.

6.How does Aetrix verify that SIR580DP-T1-BE3 is sourced from the original manufacturer or authorized distributors?

All SIR580DP-T1-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR580DP-T1-BE3 meets industry standards.

7.What is the process for return or replacement of SIR580DP-T1-BE3?

All SIR580DP-T1-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR580DP-T1-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR580DP-T1-BE3 part is unused and in its original packaging.

Return procedure for SIR580DP-T1-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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