My Inquiry
My Account
Vishay Siliconix SIR5810DP-T1-RE3
- Part No.:
- SIR5810DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR5810DP-T1-RE3.pdf
- Description:
- N-CHANNEL 80 V (D-S) MOSFET 150C
- Quantity:
- Payment:
- Shipping:
Inventory:7,724
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIR5810DP-T1-RE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen V power MOSFET in PowerPAK® SO-8 package, rated for 53.3 A continuous drain current at TC = 25 °C, with RDS(on) of 0.010 Ω at VGS = 10 V and Qg of 9.2 nC at VGS = 7.5 V. It serves as a primary-side switch or synchronous rectifier in high-efficiency DC/DC converters.
For engineers reviewing the SIR5810DP-T1-RE3 datasheet, SIR5810DP-T1-RE3 pinout, SIR5810DP-T1-RE3 application, or SIR5810DP-T1-RE3 equivalent, key selection criteria include its low RDS(on) × Qoss figure-of-merit, 100 % Rg and UIS testing, and thermal resistance RthJC of 1.8 °C/W for high-power-density board designs.
Technical Context
This MOSFET employs Vishay's TrenchFET® Gen V process to optimize conduction and switching losses simultaneously. Its gate charge profile-Qg = 9.2 nC (VGS = 7.5 V), Qgd = 1.5 nC, and Qoss = 38 nC-is tuned for fast turn-on/off with minimal Miller effect, supporting high-frequency operation up to 1 MHz in hard-switched topologies.
The device features a robust body diode with trr = 44 ns (typ), Qrr = 40 nC, and VSD = 0.8 V at IS = 5 A, enabling reliable OR-ing and reverse-current blocking without external Schottky assistance. Thermal design leverages a low RthJC of 1.8 °C/W and exposed-drain PowerPAK SO-8 footprint for direct heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 80 V - supports 48 V input bus systems with 20 % derating margin |
| RDS(on) max @ 10 V | 0.010 Ω - enables <1 W conduction loss at 10 A, critical for 50+ A power stages |
| ID cont. @ TC=25°C | 53.3 A - delivers high current density in compact 5.15 mm × 6.15 mm footprint |
| Qg typ @ 7.5 V | 9.2 nC - reduces gate drive power and EMI in 300–500 kHz SMPS designs |
| RthJC max | 2.2 °C/W - allows >36 W steady-state dissipation with modest heatsink attachment |
| VGS(th) range | 2–4 V - ensures clean logic-level turn-on with 3.3 V or 5 V microcontroller drivers |
| EAS | 20 mJ - withstands single-pulse avalanche stress during inductive load switching |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed-drain thermal pad), dimensions 5.15 mm × 6.15 mm × 1.0 mm, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Exposed copper drain pad on bottom surface provides primary thermal path and low-inductance power return |
| G (pin 1 top-side marking) | Gate (G) | Single gate terminal located adjacent to source pins to minimize gate loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V process | Delivers industry-leading RDS(on) × Qoss FOM for reduced switching + conduction loss trade-off |
| 100 % Rg tested | Guarantees gate resistance ≤ 2.1 Ω, ensuring predictable turn-on timing and driver sizing |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching stress without derating |
| Exposed-drain thermal pad | Enables direct PCB copper pour attachment for junction-to-board thermal resistance < 3 °C/W |
| Lead (Pb)-free & halogen-free | Meets IPC/JEDEC J-STD-609 Category 1 and RoHS Directive 2011/65/EU requirements |
Applications
| Synchronous Rectification | Primary Side Switch |
|---|---|
Use Scenario: Secondary-side rectification in isolated 48 V–12 V LLC resonant converters for server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce forward voltage drop and conduction loss. Use Value: Achieves >1.2 % efficiency gain at full load versus 40 V Schottky due to 0.010 Ω RDS(on) and 0.8 V VSD body diode. | Use Scenario: High-side main switch in 36–75 V input telecom DC/DC bricks operating at 350 kHz. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer into transformer primary winding. Use Value: Enables 95.3 % peak efficiency with Qg = 9.2 nC minimizing gate drive loss and td(on)/td(off) < 24 ns enabling tight dead-time control. |
| OR-ing and Hot Swap | Battery Management |
Use Scenario: Redundant 28 V power rail OR-ing in avionics power distribution units. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode with reverse-current blocking. Use Value: Eliminates 0.4 V diode drop, reducing heat generation by 8.5 W per rail at 21 A, while trr = 44 ns prevents shoot-through during switchover. | Use Scenario: Charge/discharge path switch in 24 V LiFePO₄ battery packs for industrial UPS systems. IC Role / Device Role / Timing Role: Bidirectional current-handling switch isolating battery from load during fault or sleep mode. Use Value: Supports 51.4 A continuous source current and 20 mJ avalanche energy for safe interruption of short-circuit events without external protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF540NPBF | RDS(on) = 0.044 Ω @ 10 V, Qg = 71 nC, TO-220 package, RthJC = 1.5 °C/W | Higher conduction loss, larger footprint, higher gate drive requirement | Choose only if through-hole mounting or legacy layout compatibility required |
| SiR626DP-T1-RE3 | RDS(on) = 0.0058 Ω @ 10 V, Qg = 22.5 nC, same PowerPAK SO-8 package | Lower RDS(on) but higher Qg increases switching loss above 250 kHz | Select when <0.5 mΩ RDS(on) priority outweighs gate drive power and EMI concerns |
Compared with IRF540NPBF and SiR626DP-T1-RE3, the SIR5810DP-T1-RE3 offers optimal balance of low RDS(on) × Qg (0.092 Ω·nC) and fast switching for 300–600 kHz DC/DC converters, while maintaining compatibility with standard SO-8 reflow profiles and thermal management practices.
Availability
SIR5810DP-T1-RE3 is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, motor drive control circuits, and battery management systems requiring stable component supply and long-term industrial lifecycle support.
Supply support for SIR5810DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The PowerPAK SO-8 product line delivers high-current, low-RDS(on) MOSFETs optimized for space-constrained, thermally demanding applications such as server power supplies and industrial motor drives.
FAQ
What is the maximum continuous drain current rating for SIR5810DP-T1-RE3 at case temperature of 70 °C?
The SIR5810DP-T1-RE3 has a maximum continuous drain current ID of 42.6 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB layout and heatsinking in the target application.
Does SIR5810DP-T1-RE3 support logic-level gate drive from a 3.3 V microcontroller?
Yes, the SIR5810DP-T1-RE3 has a gate threshold voltage VGS(th) range of 2–4 V, allowing reliable turn-on with 3.3 V logic-level signals. However, full enhancement to RDS(on) = 0.0157 Ω requires VGS = 7.5 V; for optimal performance, a dedicated gate driver or level-shifter is recommended in high-current applications.
What is the body diode reverse recovery time (trr) of SIR5810DP-T1-RE3, and how does it impact synchronous rectification?
The SIR5810DP-T1-RE3 has a typical body diode reverse recovery time trr of 44 ns at TJ = 25 °C. This fast recovery minimizes reverse-recovery current spikes and associated switching losses in synchronous rectifier configurations, especially in high-frequency LLC or phase-shifted full-bridge topologies where diode commutation occurs every switching cycle.
Is SIR5810DP-T1-RE3 suitable for avalanche-rated applications such as inductive load switching?
Yes, the SIR5810DP-T1-RE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy EAS = 20 mJ. This makes it suitable for applications involving relay driving, solenoid control, or flyback snubberless designs where transient voltage spikes exceed VDS rating, provided pulse conditions remain within the specified L = 0.1 mH test limit.
How does the PowerPAK SO-8 package of SIR5810DP-T1-RE3 affect thermal management compared to traditional SO-8?
The PowerPAK SO-8 package of SIR5810DP-T1-RE3 features an exposed-drain copper pad on the bottom surface, reducing RthJC to 1.8 °C/W (typ) versus >60 °C/W for standard SO-8. This enables direct thermal coupling to inner-layer copper pours or external heatsinks, supporting >36 W steady-state power dissipation without requiring additional thermal vias or complex stack-ups.
SIR5810DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen V
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.5A (Ta), 53.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 900 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 56.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR5810DP-T1-RE3 FAQ
1.How can I place an order for SIR5810DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR5810DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR5810DP-T1-RE3 reliable?
The price and inventory of SIR5810DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR5810DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIR5810DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR5810DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR5810DP-T1-RE3?
SIR5810DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR5810DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR5810DP-T1-RE3?
For technical support, including SIR5810DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR5810DP-T1-RE3 requirements.
6.How does Aetrix verify that SIR5810DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIR5810DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR5810DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIR5810DP-T1-RE3?
All SIR5810DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR5810DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR5810DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIR5810DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIR5810DP-T1-RE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
