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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR624DP-T1-RE3

Name: SIR624DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR624DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR624DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR624DP-T1-RE3.pdf

Description:: MOSFET N-CH 200V 5.7A/18.6A PPAK

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Product details

Overview

SIR624DP-T1-RE3 from Vishay Siliconix is an N-channel 200 V, 18.6 A (T_J = 150 °C) PowerPAK® SO-8 MOSFET with R_DS(on) = 0.060 Ω at V_GS = 10 V, Q_g = 19.5 nC (typ.), and optimized ThunderFET® technology for DC/DC converters and telecom primary-side switching.

For engineers reviewing the SIR624DP-T1-RE3 datasheet, SIR624DP-T1-RE3 pinout, SIR624DP-T1-RE3 application, or SIR624DP-T1-RE3 equivalent, this device delivers high-voltage switching capability in a thermally enhanced leadless SO-8 footprint-critical for space-constrained, high-efficiency power stages requiring low gate charge and robust avalanche performance.

Technical Context

This MOSFET employs a trench-gate silicon process with ThunderFET® optimization to balance conduction loss (R_DS(on)), switching speed (Q_g, Q_gd, t_r/t_f), and output capacitance (C_oss = 100 pF). It supports unclamped inductive switching (UIS) with E_AS = 11.25 mJ and features 100 % R_g and UIS tested units.

The PowerPAK SO-8 package provides a low R_thJC of 1.9 °C/W (typ.) and exposes the drain pad on the bottom surface for direct thermal coupling to PCB copper. Its pinout matches standard SO-8 but replaces leads with solderable copper pads-enabling DPAK-level thermal performance in SO-8 board area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Supports primary-side switching in 48 V telecom and 100–200 V bus applications without derating.
R_DS(on) max	0.060 Ω @ V_GS = 10 V - Enables <1.2 W conduction loss at 18.6 A, reducing thermal load in high-current DC/DC stages.
I_D continuous	18.6 A @ T_C = 25 °C - Rated for sustained operation with adequate heatsinking on FR4 or multilayer boards.
Q_g typ.	19.5 nC - Low gate drive energy supports efficient 500 kHz–1 MHz switching with minimal driver loss.
R_thJC max	2.4 °C/W - Enables >20 W power dissipation with modest heatsink or copper pour, matching DPAK thermal capability.
E_AS	11.25 mJ - Withstands single-pulse inductive energy in hard-switched topologies without failure.
V_GS(th)	2–4 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, 5.15 mm × 6.15 mm × 1.04 mm), thermally enhanced with exposed drain paddle on bottom side. Compatible with standard SO-8 land patterns but requires full-surface soldering of drain pad for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Eight-pad drain configuration maximizes copper area for thermal conduction and minimizes R_DS(on) parasitic resistance.
Gate (G)	Control input	Single gate terminal located at Pin 1 (top-left corner in top view); requires <3 Ω gate resistor for controlled turn-on/turn-off.

Key Features

Feature	Design Value
ThunderFET® technology	Optimized R_DS(on)/Q_g/Q_oss trade-off enables high-frequency, high-efficiency operation in isolated and non-isolated DC/DC converters.
100 % R_g and UIS tested	Guarantees gate resistance consistency (<3.0 Ω) and single-pulse avalanche ruggedness (IAS = 15 A, EAS = 11.25 mJ) per unit.
PowerPAK SO-8 package	SO-8 footprint with DPAK-equivalent R_thJC (1.9 °C/W) and lower profile-ideal for ultra-thin power modules and telecom bricks.
Body diode t_rr	126 ns (typ.) - Supports synchronous rectification with low reverse recovery loss in secondary-side applications.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C; suitable for industrial and telecom end-equipment.

Applications

Fixed Telecom Power Supply	Isolated DC/DC Converter Primary Switch
Use Scenario: High-density 48 V input, 12 V/20 A output telecom rectifier operating at 300 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 200 V blocking and 18 A peak current during PWM cycles. Use Value: Low Q_g (19.5 nC) reduces gate driver loss; R_DS(on) = 0.060 Ω limits conduction loss to <2.2 W at full load-enabling >95 % efficiency at 50 °C ambient.	Use Scenario: 100–200 V input, 12–48 V output flyback or LLC resonant converter in industrial control power modules. IC Role / Device Role / Timing Role: Main switching FET in primary bridge-leg or single-ended configuration, rated for repetitive 200 V V_DS stress. Use Value: 200 V V_DS rating avoids derating in 170 V_AC surge conditions; E_AS = 11.25 mJ ensures reliability during startup overloads and line transients.
Synchronous Rectification Secondary Switch	High-Voltage Motor Drive Half-Bridge
Use Scenario: 12 V output stage of server VRM using synchronous rectification with external controller and current sensing. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with body diode conducting freewheeling current before gate turn-on. Use Value: Fast t_rr = 126 ns and low Q_rr = 360 nC minimize reverse recovery loss and EMI; V_SD = 0.81 V reduces forward conduction loss vs. Schottky alternatives.	Use Scenario: 24–48 V BLDC motor driver half-bridge in HVAC fan controllers, where compact size and thermal headroom are critical. IC Role / Device Role / Timing Role: High-side or low-side switching element in 3-phase inverter leg, operating with 10–20 kHz PWM. Use Value: PowerPAK SO-8's R_thJC = 1.9 °C/W allows >15 W dissipation without external heatsink-reducing BOM count and board area vs. TO-252 solutions.

Fixed Telecom Power Supply

Isolated DC/DC Converter Primary Switch

Use Scenario: High-density 48 V input, 12 V/20 A output telecom rectifier operating at 300 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 200 V blocking and 18 A peak current during PWM cycles.

Use Value: Low Q_g (19.5 nC) reduces gate driver loss; R_DS(on) = 0.060 Ω limits conduction loss to <2.2 W at full load-enabling >95 % efficiency at 50 °C ambient.

Use Scenario: 100–200 V input, 12–48 V output flyback or LLC resonant converter in industrial control power modules.

IC Role / Device Role / Timing Role: Main switching FET in primary bridge-leg or single-ended configuration, rated for repetitive 200 V V_DS stress.

Use Value: 200 V V_DS rating avoids derating in 170 V_AC surge conditions; E_AS = 11.25 mJ ensures reliability during startup overloads and line transients.

Synchronous Rectification Secondary Switch

High-Voltage Motor Drive Half-Bridge

Use Scenario: 12 V output stage of server VRM using synchronous rectification with external controller and current sensing.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with body diode conducting freewheeling current before gate turn-on.

Use Value: Fast t_rr = 126 ns and low Q_rr = 360 nC minimize reverse recovery loss and EMI; V_SD = 0.81 V reduces forward conduction loss vs. Schottky alternatives.

Use Scenario: 24–48 V BLDC motor driver half-bridge in HVAC fan controllers, where compact size and thermal headroom are critical.

IC Role / Device Role / Timing Role: High-side or low-side switching element in 3-phase inverter leg, operating with 10–20 kHz PWM.

Use Value: PowerPAK SO-8's R_thJC = 1.9 °C/W allows >15 W dissipation without external heatsink-reducing BOM count and board area vs. TO-252 solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 0.042 Ω @ 10 V, Q_g = 24.5 nC, same PowerPAK SO-8 package and 200 V rating.	Better conduction loss but higher gate drive requirement; suited for lower-frequency, higher-current designs where R_DS(on) dominates efficiency.	Select SiR626DP-T1-RE3 when optimizing for <100 kHz operation with >20 A load current and available gate drive strength.
IRF6642TRPBF	200 V, R_DS(on) = 0.055 Ω @ 10 V, Q_g = 22 nC, PQFN 5×6 mm package (not SO-8 compatible).	Different footprint and thermal interface; requires PCB redesign; slightly higher R_thJA (28 °C/W vs. 25 °C/W for SIR624DP).	Choose IRF6642TRPBF only if migrating to newer PQFN layout and prioritizing marginally lower R_DS(on) over drop-in replacement capability.

Compared with SiR626DP-T1-RE3 and IRF6642TRPBF, the SIR624DP-T1-RE3 offers the best balance of gate drive simplicity (lower Q_g), thermal compatibility (SO-8 footprint), and cost-effective 200 V ruggedness-making it ideal for legacy board upgrades and space-constrained telecom power supplies.

Availability

SIR624DP-T1-RE3 is available at Aetrix Electronics and suitable for fixed telecom power supplies, isolated DC/DC converters, and synchronous rectification circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for SIR624DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SIR624DP-T1-RE3 belongs to Vishay's ThunderFET® PowerPAK SO-8 family, engineered for high-efficiency, high-density power conversion in telecom, industrial, and computing applications where thermal performance and board space are critical constraints.

FAQ

What is the maximum continuous drain current for SIR624DP-T1-RE3 at 70 °C case temperature?

The maximum continuous drain current for SIR624DP-T1-RE3 is 14.8 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual board layout and copper area in the target application. The SIR624DP-T1-RE3 maintains safe operation up to T_J = 150 °C under these conditions.

Does SIR624DP-T1-RE3 support gate drive from a 5 V microcontroller?

Yes, SIR624DP-T1-RE3 has a gate threshold voltage (V_GS(th)) of 2–4 V and is fully enhanced at V_GS = 5 V, delivering R_DS(on) ≤ 0.064 Ω. However, for optimal efficiency and fast switching, a dedicated gate driver capable of sourcing/sinking ≥1 A peak current is recommended-especially at frequencies above 200 kHz-to overcome its 19.5 nC total gate charge. The SIR624DP-T1-RE3 performs reliably with 5 V logic-level drive in low-speed applications.

What is the thermal resistance from junction to ambient (R_thJA) for SIR624DP-T1-RE3 on a standard 1" × 1" FR4 board?

On a 1" × 1" FR4 board, the maximum junction-to-ambient thermal resistance (R_thJA) for SIR624DP-T1-RE3 is 25 °C/W, with a typical value of 20 °C/W. This rating assumes surface mounting per Vishay's recommended solder profile and excludes additional copper pours. Adding ≥0.3 in² of spreading copper on inner layers can reduce R_thJA to ~12–15 °C/W. The SIR624DP-T1-RE3 benefits significantly from thermal vias under the drain pad to internal ground planes.

Is SIR624DP-T1-RE3 suitable for synchronous rectification in a 12 V output DC/DC converter?

Yes, SIR624DP-T1-RE3 is suitable for synchronous rectification in 12 V output converters due to its low V_SD = 0.81 V (at I_S = 5 A), fast body diode reverse recovery time (t_rr = 126 ns typ.), and low Q_rr = 360 nC. Its 200 V rating provides ample margin for transient spikes in secondary-side circuits. When used as a synchronous rectifier, the SIR624DP-T1-RE3 reduces conduction loss by >30 % compared to Schottky diodes while maintaining tight timing control via external gate drive.

What is the avalanche energy rating (E_AS) for SIR624DP-T1-RE3, and how is it tested?

The single-pulse avalanche energy rating (E_AS) for SIR624DP-T1-RE3 is 11.25 mJ, measured under L = 0.1 mH, I_AS = 15 A, and T_J = 25 °C. This parameter is verified through 100 % UIS (unclamped inductive switching) testing per JEDEC standards, ensuring each unit withstands worst-case inductive turn-off stress without degradation. The SIR624DP-T1-RE3's E_AS supports robust operation in hard-switched topologies like forward and flyback converters during overload or short-circuit events.

SIR624DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 5.7A (Ta), 18.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1110 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR624DP-T1-RE3 FAQ

1.How can I place an order for SIR624DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR624DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR624DP-T1-RE3 reliable?

The price and inventory of SIR624DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR624DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR624DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR624DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR624DP-T1-RE3?

SIR624DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR624DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR624DP-T1-RE3?

For technical support, including SIR624DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR624DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR624DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR624DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR624DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR624DP-T1-RE3?

All SIR624DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR624DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR624DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR624DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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