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Vishay Siliconix SIR688DP-T1-GE3
- Part No.:
- SIR688DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR688DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 60V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:1,258
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Product details
Overview
SIR688DP-T1-GE3 from Vishay Siliconix is an N-channel 60 V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, rated for 60 A continuous drain current at TC = 25 °C, with RDS(on) = 3.5 mΩ at VGS = 10 V and Qg = 20.5 nC (typ.) at VGS = 4.5 V. It serves as a primary-side switch or synchronous rectifier in high-efficiency DC/DC converters.
For engineers reviewing the SIR688DP-T1-GE3 datasheet, SIR688DP-T1-GE3 pinout, SIR688DP-T1-GE3 application, or SIR688DP-T1-GE3 equivalent, this page delivers verified electrical specs, thermal performance data, package dimensions, real-world use scenarios, and two validated alternative MOSFETs - all tied explicitly to the SiR688DP-T1-GE3 ordering variant.
Technical Context
This MOSFET employs trench gate technology to achieve low RDS(on) and optimized gate charge, enabling high-frequency switching in hard-switched and synchronous rectification topologies. Its 60 V VDS rating supports 48 V input bus systems and flyback/LLC primary-side operation.
The PowerPAK® SO-8 package provides a 1.0 °C/W typical junction-to-case thermal resistance and exposes the drain pad on the bottom surface for direct board-level heat sinking - delivering DPAK-level thermal performance in an SO-8 footprint. It is 100 % Rg and UIS tested per production screening.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Supports 48 V nominal input rails with 20 % margin for transients in telecom and industrial power supplies. |
| RDS(on) max | 3.5 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 60 A, critical for high-current synchronous rectifiers. |
| ID continuous | 60 A @ TC = 25 °C - Validated for high-current primary-side switching in compact 100–500 W AC/DC adapters. |
| Qg typ. | 20.5 nC @ VGS = 4.5 V - Low gate charge reduces drive loss and enables efficient operation with 5 V gate drivers. |
| RthJC max | 1.5 °C/W - Allows >80 W steady-state power dissipation with minimal junction-to-board temperature rise. |
| Body diode VSD | 0.74–1.1 V @ IS = 5 A - Low forward voltage improves light-load efficiency in synchronous rectification mode. |
| EAS | 45 mJ - Rated avalanche energy supports robustness against inductive switching stress in DC/AC inverters. |
Pinout & Package
PowerPAK® SO-8 is a leadless, surface-mount package with exposed drain pad on the bottom side. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), matching standard SO-8 footprint but with enhanced thermal and current-handling capability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate drive; low Ciss (3105 pF) minimizes Miller effect in high-dV/dt environments. |
| 2 (S) | Source | Reference node for gate drive; connected to power ground or low-side return path in half-bridge configurations. |
| 3 (S) | Source | Second source connection; paralleled with Pin 2 to reduce source inductance and improve switching stability. |
| 4 (S) | Source | Third source connection; further lowers common-source inductance for high-frequency synchronous rectifier operation. |
| 5 (D) | Drain | Main current output; electrically and thermally connected to bottom-exposed copper pad for low-resistance heat transfer. |
| 6 (D) | Drain | Secondary drain terminal; shares same internal node as Pin 5; increases current-carrying capacity and thermal spreading. |
| 7 (D) | Drain | Third drain terminal; enhances current sharing and reduces package-level RDS(on) contribution under high pulse loads. |
| 8 (D) | Drain | Fourth drain terminal; completes symmetric drain layout; enables uniform current distribution across PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process | Enables 3.5 mΩ RDS(on) at 60 V while maintaining rugged avalanche capability (EAS = 45 mJ). |
| 100 % Rg and UIS tested | Ensures gate robustness and single-pulse avalanche reliability - critical for unregulated input or no-load conditions. |
| Low Qg (20.5 nC @ 4.5 V) | Reduces gate drive power and allows use of cost-effective 5 V microcontroller outputs without buffer stages. |
| PowerPAK® SO-8 package | Delivers 1.0 °C/W RthJC - equivalent to DPAK - in SO-8 footprint, enabling drop-in thermal upgrade in legacy layouts. |
| Lead (Pb)-free and Halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709C, supporting environmentally compliant industrial manufacturing. |
Applications
| Primary Side Switch | Synchronous Rectifier |
|---|---|
Use Scenario: High-efficiency flyback or LLC resonant converter operating from 36–60 V DC input in telecom power supplies. IC Role / Device Role / Timing Role: Primary-side switching element driven by PWM controller; handles full input voltage and peak current during on-time. Use Value: 60 V rating and 3.5 mΩ RDS(on) minimize conduction loss and enable >94 % efficiency at 250 W output. |
Use Scenario: Secondary-side rectification in isolated DC/DC modules for server VRMs and AI accelerators. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated gate driver IC with adaptive dead-time control. Use Value: Low VSD (0.74 V) and fast body diode recovery (trr = 43 ns) reduce reverse-recovery loss and improve light-load efficiency. |
| DC/DC Converter | DC/AC Inverter |
Use Scenario: 48 V–12 V non-isolated buck converter in automotive ADAS ECUs and industrial PLCs. IC Role / Device Role / Timing Role: High-side power switch in integrated buck stage; switched at 300–500 kHz with 5 V gate drive. Use Value: 20.5 nC Qg at 4.5 V enables low drive loss and stable operation with standard gate drivers like UCC27531. |
Use Scenario: Half-bridge leg in 1–3 kVA solar microinverters using unipolar PWM modulation. IC Role / Device Role / Timing Role: Low-side switching device in bridge configuration; commutates 60 A RMS output current at 20 kHz. Use Value: 100 A pulsed drain rating (IDM) and 45 mJ EAS ensure safe operation during grid fault transients and shoot-through events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-GE3 | RDS(on) = 4.0 mΩ @ 10 V; Qg = 17.5 nC; same PowerPAK SO-8 package and pinout. | Slightly higher conduction loss but lower gate charge - better suited for very high-frequency (>1 MHz) buck converters. | Select when prioritizing gate drive efficiency over absolute conduction loss at 60 A. |
| IRF7470PBF | Standard SO-8 package; RDS(on) = 4.2 mΩ @ 10 V; RthJA = 62 °C/W (vs. 23 °C/W for SIR688DP-T1-GE3). | Limited thermal performance restricts use to <15 W continuous dissipation; not suitable for high-current synchronous rectification. | Choose only for cost-sensitive, low-power designs where board space and thermal headroom permit SO-8 limitations. |
Compared with SiR626DP-T1-GE3, SIR688DP-T1-GE3 delivers lower RDS(on) for high-current conduction dominance; versus IRF7470PBF, it offers 2.7× lower RthJA and 3.5× higher continuous current capability - making it the preferred choice for thermally constrained, high-power-density applications.
Availability
SIR688DP-T1-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, and industrial DC/AC inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SIR688DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SiR688DP product line targets high-efficiency, high-current power conversion applications - designed specifically for primary-side switching and synchronous rectification in compact, thermally demanding environments.
FAQ
What is the maximum continuous drain current rating for SIR688DP-T1-GE3 at 70 °C case temperature?
The SIR688DP-T1-GE3 is rated for 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value is identical to its rating at TC = 25 °C due to the device's low RDS(on) temperature coefficient and robust thermal design in the PowerPAK® SO-8 package. Derating begins above 70 °C case temperature per the current derating curve in the datasheet.
Does SIR688DP-T1-GE3 support 4.5 V gate drive in practical applications?
Yes, SIR688DP-T1-GE3 is fully characterized for 4.5 V gate drive: RDS(on) is guaranteed ≤ 6.0 mΩ at VGS = 4.5 V and ID = 10 A, and total gate charge is specified as 20.5 nC (typ.) under those conditions. This makes SIR688DP-T1-GE3 compatible with 5 V logic-level controllers and gate drivers without level-shifting circuitry.
What is the thermal resistance from junction to ambient for SIR688DP-T1-GE3 on a standard FR4 board?
On a 1" × 1" FR4 board, the SIR688DP-T1-GE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 23 °C/W for t ≤ 10 s. For steady-state operation, RthJA is not specified directly but is strongly dependent on PCB copper area; with optimized 0.5 in² spreading copper, measured values approach 30–35 °C/W - significantly better than standard SO-8 alternatives.
Is SIR688DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?
Yes, SIR688DP-T1-GE3 uses the PowerPAK® SO-8 package, which maintains identical pin count, pin spacing (1.27 mm), and outline dimensions (6.15 mm × 5.15 mm) as the industry-standard SO-8. The pinout - G-S-S-S-D-D-D-D - matches standard SO-8 MOSFETs, enabling direct replacement without PCB redesign.
What does "T1-GE3" signify in the full part number SIR688DP-T1-GE3?
In SIR688DP-T1-GE3, "T1" denotes tape-and-reel packaging (1000 pcs/reel), and "GE3" indicates lead (Pb)-free and halogen-free construction per Vishay's environmental compliance standard. This suffix confirms RoHS 2011/65/EU and JEDEC JS709C compliance, with NiPdAu plating on terminals and matte tin on exposed drain pad.
SIR688DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 66 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3105 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR688DP-T1-GE3 FAQ
1.How can I place an order for SIR688DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR688DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR688DP-T1-GE3 reliable?
The price and inventory of SIR688DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR688DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR688DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR688DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR688DP-T1-GE3?
SIR688DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR688DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR688DP-T1-GE3?
For technical support, including SIR688DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR688DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR688DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR688DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR688DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR688DP-T1-GE3?
All SIR688DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR688DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR688DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR688DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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