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Vishay Siliconix SIR878ADP-T1-GE3
- Part No.:
- SIR878ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR878ADP-T1-GE3.pdf
- Description:
- MOSFET N-CH 100V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,097
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Product details
Overview
SIR878ADP-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Power MOSFET in PowerPAK® SO-8 package, rated for 40 A continuous drain current at TC = 25 °C, with RDS(on) of 0.014 Ω at VGS = 10 V and 13.9 nC total gate charge. It serves as a primary-side switching device in telecom/server 48 V DC/DC converters.
For engineers reviewing the SIR878ADP-T1-GE3 datasheet, SIR878ADP-T1-GE3 pinout, SIR878ADP-T1-GE3 application, or SIR878ADP-T1-GE3 equivalent, this part delivers high-current switching capability with low conduction loss, robust avalanche rating (20 mJ), and halogen-free/RoHS-compliant construction suitable for industrial and high-efficiency power conversion designs.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) and fast switching performance. Its 100 V VDS rating supports primary-side operation in isolated DC/DC topologies up to 48 V input, while the 13.9 nC Qg at VGS = 4.5 V enables efficient drive with standard gate drivers.
The PowerPAK® SO-8 package provides a junction-to-case thermal resistance of 2.1 °C/W (typical), enabling high-power dissipation without external heatsinking when mounted on adequate PCB copper. The device is 100 % Rg and UIS tested, ensuring gate robustness and unclamped inductive switching reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports primary-side switching in 48 V telecom/server DC/DC converters with margin against transients. |
| RDS(on) max | 0.014 Ω at VGS = 10 V - Enables <1.4 W conduction loss at 10 A, critical for high-efficiency power stages. |
| ID (continuous) | 40 A at TC = 25 °C - Delivers high output power density in compact board space. |
| Qg (typ.) | 13.9 nC at VGS = 4.5 V - Reduces gate drive power and allows use with low-current controllers in cost-sensitive designs. |
| RthJC (typ.) | 2.1 °C/W - Permits >28 W steady-state power dissipation with 60 °C case temperature rise, supporting thermally constrained layouts. |
| EAS | 20 mJ - Withstands unclamped inductive energy during hard-switching events without failure. |
| VGS(th) | 1.2–2.8 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers. |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with 8 terminals, identical footprint and pinout to standard SO-8 but with exposed drain pads on the bottom for enhanced thermal conduction. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate-source voltage; low 0.2–2.1 Ω gate resistance minimizes ringing. |
| 2 (S) | Source | Reference node for gate drive; tied to power ground in low-side configurations; carries full load current. |
| 3 (S) | Source | Second source connection; paralleled internally to reduce source inductance and improve switching stability. |
| 4 (S) | Source | Third source connection; further lowers common-source inductance in high-dI/dt applications. |
| 5 (D) | Drain | Main power output node; connected to internal die backside via exposed copper pad for direct thermal path to PCB. |
| 6 (D) | Drain | Second drain terminal; shares current with Pin 5 to reduce drain loop inductance in half-bridge layouts. |
| 7 (D) | Drain | Third drain terminal; enhances current sharing and thermal spreading across the bottom-side drain pad. |
| 8 (D) | Drain | Fourth drain terminal; completes low-inductance, high-current drain interface to PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.014 Ω RDS(on) at 100 V rating-unusual combination of high breakdown voltage and low on-resistance. |
| 100 % Rg and UIS tested | Guarantees gate oxide integrity and single-pulse avalanche survival up to 20 mJ per unit, eliminating field failures from transient overstress. |
| PowerPAK® SO-8 package | Delivers DPAK-equivalent thermal performance (RthJC = 2.1 °C/W) in SO-8 footprint-no PCB redesign needed for upgrade from standard SO-8. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC-enables compliance in environmentally regulated industrial and telecom equipment. |
| Low Qgd / Qg ratio | Qgd = 6.3 nC of total Qg = 13.9 nC → ~45 % - reduces Miller effect, improving hard-switching robustness and EMI behavior. |
Applications
| Telecom Server DC/DC Converter | Industrial Motor Drive Half-Bridge |
|---|---|
Use Scenario: Primary-side switch in 48 V input, full-bridge isolated DC/DC converter for 5G base station power supplies. IC Role / Device Role / Timing Role: High-side and low-side synchronous rectifier switch operating at 200–500 kHz with 50 ns dead-time control. Use Value: 0.014 Ω RDS(on) limits conduction loss to ≤1.4 W at 10 A, while 13.9 nC Qg enables clean 50 ns turn-off with 1 Ω gate resistor-reducing switching loss by 22 % vs. legacy SO-8 MOSFETs. |
Use Scenario: Low-side switch in 24–48 V BLDC motor drive half-bridge controlling fan or pump loads in factory automation systems. IC Role / Device Role / Timing Role: PWM-controlled power switch handling 30 A peak phase current with 20 kHz carrier frequency. Use Value: 40 A ID rating and 20 mJ EAS withstand repetitive inductive kickback from motor windings; PowerPAK SO-8's 2.1 °C/W RthJC keeps TJ < 125 °C without heatsink at 25 W dissipation. |
| High-Density PSU Primary Switch | 48 V Data Center Power Distribution |
Use Scenario: Main switching FET in compact 1 kW AC/DC front-end with active clamp forward topology. IC Role / Device Role / Timing Role: Fast-turning primary switch managing 35 A average current and 100 V blocking duty cycle. Use Value: 0.0148 Ω RDS(on) at VGS = 7.5 V ensures stable on-resistance across wide gate drive range; 100 % UIS testing prevents failure during startup surge or overload conditions. |
Use Scenario: OR-ing FET in redundant 48 V intermediate bus architecture for AI accelerator racks. IC Role / Device Role / Timing Role: Bidirectional current-handling switch configured in ideal diode mode using external controller. Use Value: Low 0.76 V body diode forward voltage (VSD) at 4 A reduces reverse-conduction loss by 35 % vs. competing 100 V MOSFETs; 34 A ID at VGS = 4.5 V supports logic-level control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP040N10N5 | RDS(on) = 0.004 Ω @ 10 V (lower), but larger TO-220FP package; Qg = 47 nC (higher); no halogen-free certification stated. | Requires heatsink and PCB layout change; better for ultra-low-loss fixed-layout designs where size is secondary. | Select when lowest possible RDS(on) justifies thermal overhead and board rework; avoid if halogen-free compliance is mandatory. |
| ON Semiconductor NTMFS4C09NT1G | RDS(on) = 0.0095 Ω @ 10 V; Qg = 22.5 nC; Power56 package (3.3 × 3.3 mm); RthJC = 1.5 °C/W (better), but lower ID = 25 A. | Smaller footprint, higher power density, but limited to ≤25 A continuous; not drop-in compatible with SO-8 land pattern. | Choose for space-constrained designs needing <5 mm² area; verify thermal margin at target current since ID rating is 37.5 % lower than SIR878ADP-T1-GE3. |
Compared with IPP040N10N5 and NTMFS4C09NT1G, the SIR878ADP-T1-GE3 uniquely balances 40 A current capability, SO-8 drop-in compatibility, halogen-free compliance, and 13.9 nC gate charge-making it optimal for telecom/server upgrades where layout reuse and regulatory alignment are critical.
Availability
SIR878ADP-T1-GE3 is available at Aetrix Electronics and suitable for telecom server DC/DC converters, industrial motor drives, and high-density power supply designs requiring stable component supply, long-term lifecycle support, and consistent halogen-free manufacturing.
Supply support for SIR878ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The SIR878ADP-T1-GE3 belongs to Vishay's TrenchFET® Power MOSFET product line, engineered for high-efficiency, high-current switching in telecom infrastructure and enterprise power systems where thermal performance and regulatory compliance are non-negotiable.
FAQ
What is the maximum continuous drain current rating for SIR878ADP-T1-GE3 at 70 °C case temperature?
The SIR878ADP-T1-GE3 is rated for 32 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under sustained operation and must be validated against actual PCB copper area and ambient conditions. The SIR878ADP-T1-GE3 maintains its 0.014 Ω RDS(on) specification across this temperature range when driven with VGS = 10 V.
Does SIR878ADP-T1-GE3 support logic-level gate drive at 4.5 V?
Yes, the SIR878ADP-T1-GE3 is fully characterized down to VGS = 4.5 V, with RDS(on) = 0.018 Ω (max) and ID = 34 A (continuous) at that gate voltage. Its gate threshold voltage range of 1.2–2.8 V ensures reliable turn-on with 3.3 V or 4.5 V microcontroller outputs. The SIR878ADP-T1-GE3 also delivers 13.9 nC total gate charge at VGS = 4.5 V, enabling efficient low-voltage drive.
What is the thermal resistance from junction to case (RthJC) for SIR878ADP-T1-GE3?
The SIR878ADP-T1-GE3 has a typical junction-to-case (drain) thermal resistance of 2.1 °C/W and a maximum of 2.8 °C/W, measured under steady-state conditions. This value applies to heat flow from the silicon die directly into the exposed drain pad on the bottom of the PowerPAK® SO-8 package. The SIR878ADP-T1-GE3 achieves DPAK-level thermal performance while retaining SO-8 footprint compatibility.
Is SIR878ADP-T1-GE3 suitable for avalanche-rated applications?
Yes, the SIR878ADP-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for 20 mJ single-pulse avalanche energy (EAS) and 20 A single-pulse avalanche current (IAS) with L = 0.1 mH. These ratings are guaranteed per unit and documented in the Absolute Maximum Ratings table. The SIR878ADP-T1-GE3 is designed for robust operation in hard-switched topologies where inductive energy must be safely absorbed.
What package type does SIR878ADP-T1-GE3 use, and is it compatible with standard SO-8 footprints?
The SIR878ADP-T1-GE3 uses the PowerPAK® SO-8 package-a leadless variant with identical 6.15 mm × 5.15 mm outline and pin assignment to standard SO-8, enabling direct replacement without PCB changes. Its exposed drain pad on the bottom provides superior thermal conduction versus leaded SO-8. The SIR878ADP-T1-GE3 is explicitly qualified for mounting on existing SO-8 land patterns per Vishay Application Note AN821.
SIR878ADP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1275 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 44.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR878ADP-T1-GE3 FAQ
1.How can I place an order for SIR878ADP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR878ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR878ADP-T1-GE3 reliable?
The price and inventory of SIR878ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR878ADP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR878ADP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR878ADP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR878ADP-T1-GE3?
SIR878ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR878ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR878ADP-T1-GE3?
For technical support, including SIR878ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR878ADP-T1-GE3 requirements.
6.How does Aetrix verify that SIR878ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR878ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR878ADP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR878ADP-T1-GE3?
All SIR878ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR878ADP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR878ADP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR878ADP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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