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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR892DP-T1-GE3

Name: SIR892DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR892DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR892DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR892DP-T1-GE3.pdf

Description:: MOSFET N-CH 25V 50A PPAK SO-8

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Product details

Overview

SIR892DP-T1-GE3 from Vishay Siliconix is a lead-free, halogen-free N-channel TrenchFET® Power MOSFET optimized for low-side switching in synchronous buck DC-DC converters. It features 25 V V_DS, 3.2 mΩ R_DS(on) at V_GS = 10 V, 50 A continuous drain current (package-limited), 20 nC total gate charge, and PowerPAK® SO-8 packaging - enabling high-efficiency power delivery in game machines and compact computing systems.

For engineers reviewing the SIR892DP-T1-GE3 datasheet, SIR892DP-T1-GE3 pinout, SIR892DP-T1-GE3 application, or SIR892DP-T1-GE3 equivalent, key selection criteria include its 2.5 °C/W junction-to-case thermal resistance, 100 % UIS-tested ruggedness, 4.5 V logic-level gate drive compatibility, and validated performance on standard SO-8 PCB footprints without layout changes.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching characteristics. Its gate charge profile (Q_g = 20–30 nC at V_GS = 4.5 V) supports high-frequency operation up to 1 MHz in synchronous rectification topologies, and its body diode exhibits t_rr = 27–50 ns with Q_rr = 17–32 nC for reduced recovery losses.

The device operates within –55 °C to +150 °C junction temperature range and is characterized for stable R_DS(on) behavior across temperature (0.0042 Ω max at V_GS = 4.5 V, T_J = 125 °C). Its PowerPAK® SO-8 package provides DPAK-equivalent thermal performance (R_thJC = 2.0–2.5 °C/W) in an SO-8 footprint, with exposed drain pad for direct board heat sinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for low-voltage point-of-load applications
R_DS(on)	3.2 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 50 A, critical for high-current CPU/GPU VRMs
I_D (continuous)	50 A (T_C = 25 °C, package-limited) - Supports high-current synchronous buck phases without derating
Q_g	20 nC @ V_GS = 4.5 V - Low gate drive power requirement for 3.3 V/5 V controller compatibility
R_thJC	2.0 °C/W (typ.) - Enables efficient heat transfer to PCB copper, matching DPAK thermal capability
V_GS(th)	1.0–2.6 V - Ensures reliable turn-on with standard logic-level gate drivers
t_rr	27 ns (typ.) - Minimizes reverse recovery loss during high-frequency hard-switching

Pinout & Package

PowerPAK® SO-8 (leadless, surface-mount) package with 6.15 mm × 5.15 mm footprint, 1.04 mm height, and exposed drain pad on bottom side for thermal conduction. Compatible with standard SO-8 land patterns and reflow profiles per JEDEC J-STD-020 (peak 255 °C).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8 (Drain pads)	Drain (D)	Seven parallel drain terminals connected to exposed copper pad - primary thermal path and high-current output node
6 (Gate)	Gate (G)	Single gate input terminal - controls channel conduction; requires <1 Ω gate resistor for optimal switching
Source (S)	Source (S)	Internally connected source leads (pins 1–5 and 7–8 are drain; pin 6 is gate; source is via internal bonding - not externally accessible as discrete pin)

Key Features

Feature	Design Value
TrenchFET® technology	Delivers 3.2 mΩ R_DS(on) in SO-8 footprint - eliminates need for larger DPAK or TO-252 packages
100 % UIS tested	Guarantees avalanche energy handling (E_AS = 80 mJ) - ensures robustness against inductive switching transients
PowerPAK® SO-8 package	Provides 2.0 °C/W R_thJC - enables >2× higher power density than standard SO-8 in same PCB area
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS - suitable for consumer electronics and gaming hardware
Logic-level gate drive	V_GS(th) ≤ 2.6 V - fully enhances with 3.3 V or 4.5 V controllers, reducing driver complexity

Applications

Server VRM Phase Legs	Gaming Console Power Stages
Use Scenario: High-current, high-frequency buck converter supplying GPU core voltage in datacenter servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz–1 MHz with 50 A peak current. Use Value: 3.2 mΩ R_DS(on) reduces conduction loss by >40 % vs. typical 5 mΩ SO-8 alternatives, improving VRM efficiency by 1.2 % at full load.	Use Scenario: Compact, thermally constrained DC-DC stage powering SoC subsystems in handheld gaming devices. IC Role / Device Role / Timing Role: Low-side switch in dual-phase buck regulator where board space and thermal headroom are limited. Use Value: PowerPAK® SO-8's 2.0 °C/W R_thJC allows 50 A operation at 105 °C board temperature - avoids forced-air cooling or heatsinks.
Industrial PLC I/O Power Supplies	Automotive Infotainment DC-DC Modules
Use Scenario: 24 V input to 5 V/3.3 V isolated or non-isolated supply for programmable logic controller field I/O modules. IC Role / Device Role / Timing Role: Low-side FET in secondary-side synchronous rectification of flyback or buck converter. Use Value: 100 % UIS testing ensures survival under 40 A single-pulse avalanche events common in industrial surge environments.	Use Scenario: 12 V automotive battery input to 5 V USB-C PD or display backlight supply in infotainment head units. IC Role / Device Role / Timing Role: Low-side switch in high-efficiency buck converter operating across –40 °C to +125 °C ambient. Use Value: Stable R_DS(on) temperature coefficient (ΔR_DS(on)/T_J = ~0.5 %/°C) maintains consistent regulation across automotive temperature range.

Server VRM Phase Legs

Gaming Console Power Stages

Use Scenario: High-current, high-frequency buck converter supplying GPU core voltage in datacenter servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz–1 MHz with 50 A peak current.

Use Value: 3.2 mΩ R_DS(on) reduces conduction loss by >40 % vs. typical 5 mΩ SO-8 alternatives, improving VRM efficiency by 1.2 % at full load.

Use Scenario: Compact, thermally constrained DC-DC stage powering SoC subsystems in handheld gaming devices.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase buck regulator where board space and thermal headroom are limited.

Use Value: PowerPAK® SO-8's 2.0 °C/W R_thJC allows 50 A operation at 105 °C board temperature - avoids forced-air cooling or heatsinks.

Industrial PLC I/O Power Supplies

Automotive Infotainment DC-DC Modules

Use Scenario: 24 V input to 5 V/3.3 V isolated or non-isolated supply for programmable logic controller field I/O modules.

IC Role / Device Role / Timing Role: Low-side FET in secondary-side synchronous rectification of flyback or buck converter.

Use Value: 100 % UIS testing ensures survival under 40 A single-pulse avalanche events common in industrial surge environments.

Use Scenario: 12 V automotive battery input to 5 V USB-C PD or display backlight supply in infotainment head units.

IC Role / Device Role / Timing Role: Low-side switch in high-efficiency buck converter operating across –40 °C to +125 °C ambient.

Use Value: Stable R_DS(on) temperature coefficient (ΔR_DS(on)/T_J = ~0.5 %/°C) maintains consistent regulation across automotive temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	Higher R_DS(on) = 3.8 mΩ @ 10 V; identical PowerPAK® SO-8 package and pinout	Suitable for lower-current (<40 A) or cost-sensitive designs where 0.6 mΩ penalty is acceptable	Select when thermal margin exists and BOM cost reduction is prioritized over peak efficiency
IRLHS6242PBF	Lower Q_g = 12 nC @ 4.5 V but higher R_DS(on) = 4.5 mΩ @ 10 V; same SO-8 footprint, different internal construction	Better for ultra-high-frequency (>2 MHz) switching where gate drive loss dominates conduction loss	Prefer when operating above 1.5 MHz with tight gate drive power budgets, accepting higher conduction loss

Compared with SiR872DP-T1-GE3 and IRLHS6242PBF, the SIR892DP-T1-GE3 delivers the lowest R_DS(on) in the PowerPAK® SO-8 family - making it optimal for high-current, thermally constrained synchronous buck stages where conduction loss is the dominant inefficiency factor.

Availability

SIR892DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, gaming console power supplies, industrial PLCs, automotive infotainment systems, and compact computing platforms requiring stable component supply and long-term production continuity.

Supply support for SIR892DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SiR892DP product line targets high-density, high-efficiency DC-DC conversion in computing, gaming, and industrial applications - designed specifically to replace DPAK and TO-252 MOSFETs with superior thermal performance in SO-8-compatible layouts.

FAQ

What is the maximum continuous drain current rating for SIR892DP-T1-GE3?

The SIR892DP-T1-GE3 has a continuous drain current rating of 50 A at T_C = 25 °C, limited by package thermal capacity rather than silicon die capability. At T_C = 70 °C, the rating remains 50 A; at T_A = 25 °C (free air), it is derated to 30 A due to ambient thermal limitations. This reflects its design as a package-limited high-current MOSFET optimized for PCB-mounted thermal management.

Does SIR892DP-T1-GE3 support 3.3 V gate drive?

Yes, SIR892DP-T1-GE3 supports 3.3 V gate drive: its gate threshold voltage V_GS(th) is specified from 1.0 V to 2.6 V, and R_DS(on) is characterized down to V_GS = 4.5 V (4.2 mΩ max). While full enhancement occurs at ≥4.5 V, it conducts usable current at 3.3 V - however, designers should verify system-level timing and loss trade-offs using the gate charge curve (Q_g = 20–30 nC at 4.5 V) and on-resistance vs. V_GS plots in the SIR892DP-T1-GE3 datasheet.

Is SIR892DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?

Yes, SIR892DP-T1-GE3 uses the PowerPAK® SO-8 package, which maintains identical 6.15 mm × 5.15 mm footprint and pin numbering as standard SO-8 - including drain (pins 1–5, 7–8), gate (pin 6), and source (internally bonded, no external pin). It mounts directly onto existing SO-8 land patterns without PCB modification, though optimal thermal performance requires extended drain copper area per Vishay Application Note AN821.

What is the avalanche rating of SIR892DP-T1-GE3?

The SIR892DP-T1-GE3 is 100 % UIS (Unclamped Inductive Switching) tested with a single-pulse avalanche energy rating E_AS = 80 mJ and single-pulse avalanche current I_AS = 40 A (L = 0.1 mH). These values are measured under standardized conditions (T_J = 25 °C, V_DD = 25 V) and confirm ruggedness against transient inductive kickback - critical for synchronous buck low-side operation where body diode commutation occurs.

How does the thermal performance of SIR892DP-T1-GE3 compare to standard SO-8 MOSFETs?

SIR892DP-T1-GE3 delivers DPAK-equivalent thermal performance: its typical junction-to-case thermal resistance R_thJC is 2.0 °C/W, versus ~16 °C/W for standard SO-8. On a 1" × 1" FR4 board, this reduces junction temperature rise by ~40 °C at 2.7 W dissipation - keeping R_DS(on) stable and enabling 50 A continuous operation where standard SO-8 would thermally saturate well below 20 A.

SIR892DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2645 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR892DP-T1-GE3 FAQ

1.How can I place an order for SIR892DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR892DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR892DP-T1-GE3 reliable?

The price and inventory of SIR892DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR892DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR892DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR892DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR892DP-T1-GE3?

SIR892DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR892DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR892DP-T1-GE3?

For technical support, including SIR892DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR892DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR892DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR892DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR892DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR892DP-T1-GE3?

All SIR892DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR892DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR892DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR892DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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