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Vishay Siliconix SIRA60DP-T1-RE3

Name: SIRA60DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIRA60DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIRA60DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIRA60DP-T1-RE3.pdf

Description:: MOSFET N-CH 30V 100A PPAK SO-8

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Product details

Overview

SIRA60DP-T1-RE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 0.94 mΩ at V_GS = 10 V and 1.35 mΩ at V_GS = 4.5 V, rated for 100 A continuous drain current at T_C = 25 °C, and optimized for high-efficiency synchronous rectification in VRMs and embedded DC/DC converters.

For engineers reviewing the SIRA60DP-T1-RE3 datasheet, SIRA60DP-T1-RE3 pinout, SIRA60DP-T1-RE3 application, or SIRA60DP-T1-RE3 equivalent, this page delivers verified thermal resistance (R_thJC = 1.2 °C/W), gate charge (Q_g = 38 nC @ 4.5 V), body diode recovery (t_rr = 63 ns), and PowerPAK SO-8 footprint compatibility with standard SO-8 land patterns - all critical for high-density power stage layout and thermal management.

Technical Context

This MOSFET employs a trench-based silicon structure enabling ultra-low on-resistance and fast switching with low Q_g/Q_gd ratio (38 nC total gate charge, 4.7 nC gate-drain charge). Its 100% R_g and UIS tested construction ensures robustness in hard-switching and avalanche-prone topologies.

The PowerPAK SO-8 package features an exposed copper drain pad on the bottom side, providing direct thermal conduction to the PCB, achieving R_thJC = 1.2 °C/W (typical) - matching DPAK performance while retaining SO-8 footprint - and supports high-current operation up to 100 A with junction temperature range of –55 °C to +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 12 V and 24 V input systems with margin.
R_DS(on) @ 10 V	0.94 mΩ (max) - Enables <1 W conduction loss at 100 A, critical for high-current VRM output stages.
R_DS(on) @ 4.5 V	1.35 mΩ (max) - Ensures low-loss operation with 5 V gate drive, supporting controller-compatible logic-level switching.
I_D (continuous)	100 A @ T_C = 25 °C - Package-limited current rating; requires adequate PCB copper for thermal dissipation.
Q_g	38 nC @ V_GS = 4.5 V - Low gate charge enables efficient 500 kHz–1 MHz switching with minimal driver loss.
t_rr	63 ns (typ) - Fast body diode recovery reduces cross-conduction losses in synchronous rectification.
R_thJC	1.2 °C/W (typ) - Junction-to-case thermal resistance enables direct heat transfer to PCB copper, matching DPAK performance.

Pinout & Package

PowerPAK® SO-8 Single package: leadless, 5.15 mm × 6.15 mm footprint, 1.04 mm height, with exposed drain pad on bottom side. Compatible with standard SO-8 land patterns; no PCB redesign required.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-frequency switching.
5, 6, 7, 8	Drain (D)	Eight-terminal drain connection including large bottom-side exposed pad - primary thermal path to PCB.
Gate (G)	Gate (G)	Single gate terminal (Pin 1 labeled in top view); low R_g (0.85 Ω typ) minimizes gate ringing and EMI.

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Enables sub-1 mΩ R_DS(on) at 30 V while maintaining rugged avalanche capability (E_AS = 80 mJ).
100% R_g and UIS tested	Guarantees gate resistance consistency and single-pulse avalanche robustness for reliable hard-switching operation.
PowerPAK SO-8 package	Delivers DPAK-level thermal performance (R_thJC = 1.2 °C/W) in SO-8 footprint - no layout change needed for upgrade from standard SO-8.
Low Q_gd/Q_g ratio	4.7 nC / 38 nC ≈ 0.12 - Reduces Miller effect, improves controllability during turn-off, and suppresses shoot-through risk.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C; suitable for automotive and industrial applications requiring green compliance.

Applications

Server VRM Output Stage	High-Density Telecom DC/DC
Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 600 A in enterprise servers. IC Role / Device Role: Synchronous rectifier MOSFET in low-side position, replacing Schottky diodes to minimize conduction loss. Use Value: 0.94 mΩ R_DS(on) cuts I²R loss by >60% vs. legacy SO-8 MOSFETs, enabling higher efficiency (>95%) and lower thermal stress on PCB.	Use Scenario: 48 V–12 V intermediate bus converter in 1 RU telecom equipment with strict size constraints. IC Role / Device Role: Primary-side high-side switch and secondary-side synchronous rectifier in isolated LLC or phase-shifted full-bridge topology. Use Value: PowerPAK SO-8's 1.2 °C/W R_thJC allows 100 A operation without external heatsink, reducing board area by 30% vs. DPAK alternatives.
GPU Power Delivery Module	Industrial PLC Power Supply
Use Scenario: Compact, multi-rail GPU power module delivering 1.8 V @ 200 A with tight transient response requirements. IC Role / Device Role: Low-side synchronous rectifier in 3-phase interleaved buck regulator with 1 MHz switching frequency. Use Value: 38 nC Q_g at 4.5 V enables clean, fast turn-on with standard gate drivers, minimizing dead-time loss and improving load-step response.	Use Scenario: DIN-rail mounted programmable logic controller with wide-input (18–32 VDC) power supply operating in ambient up to 70 °C. IC Role / Device Role: Main switching MOSFET in non-isolated buck controller powering internal 5 V and 3.3 V rails. Use Value: –55 °C to +150 °C operating range and 100% UIS testing ensure reliability under industrial thermal cycling and load dump conditions.

Server VRM Output Stage

High-Density Telecom DC/DC

Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 600 A in enterprise servers.

IC Role / Device Role: Synchronous rectifier MOSFET in low-side position, replacing Schottky diodes to minimize conduction loss.

Use Value: 0.94 mΩ R_DS(on) cuts I²R loss by >60% vs. legacy SO-8 MOSFETs, enabling higher efficiency (>95%) and lower thermal stress on PCB.

Use Scenario: 48 V–12 V intermediate bus converter in 1 RU telecom equipment with strict size constraints.

IC Role / Device Role: Primary-side high-side switch and secondary-side synchronous rectifier in isolated LLC or phase-shifted full-bridge topology.

Use Value: PowerPAK SO-8's 1.2 °C/W R_thJC allows 100 A operation without external heatsink, reducing board area by 30% vs. DPAK alternatives.

GPU Power Delivery Module

Industrial PLC Power Supply

Use Scenario: Compact, multi-rail GPU power module delivering 1.8 V @ 200 A with tight transient response requirements.

IC Role / Device Role: Low-side synchronous rectifier in 3-phase interleaved buck regulator with 1 MHz switching frequency.

Use Value: 38 nC Q_g at 4.5 V enables clean, fast turn-on with standard gate drivers, minimizing dead-time loss and improving load-step response.

Use Scenario: DIN-rail mounted programmable logic controller with wide-input (18–32 VDC) power supply operating in ambient up to 70 °C.

IC Role / Device Role: Main switching MOSFET in non-isolated buck controller powering internal 5 V and 3.3 V rails.

Use Value: –55 °C to +150 °C operating range and 100% UIS testing ensure reliability under industrial thermal cycling and load dump conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 1.15 mΩ @ 4.5 V (higher), Q_g = 42 nC (higher), same PowerPAK SO-8 package.	Slightly lower efficiency at light loads due to higher R_DS(on); identical thermal and layout compatibility.	Select when cost sensitivity outweighs marginal efficiency gain; identical PCB reuse.
IRF7832TRPBF	R_DS(on) = 1.25 mΩ @ 4.5 V, Q_g = 48 nC, SO-8 (leaded) package with R_thJC = 16 °C/W - significantly worse thermal performance.	Requires larger copper area or heatsink to achieve same current rating; not drop-in due to leaded vs. leadless construction.	Only consider if legacy SO-8 tooling prohibits PowerPAK adoption; expect ~25 °C higher junction rise at 100 A.

Compared with SiR626DP-T1-RE3, SIRA60DP-T1-RE3 offers 0.21 mΩ lower R_DS(on) at 4.5 V and 4 nC less Q_g, directly improving conduction and switching efficiency. Against IRF7832TRPBF, it delivers 14.8 °C/W lower R_thJC, enabling 100 A operation without heatsink - a decisive advantage in space-constrained industrial and computing power supplies.

Availability

SIRA60DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, GPU power modules, and industrial PLC power supplies requiring stable component supply and long-term production continuity.

Supply support for SIRA60DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and miniaturization.

The SIRA60DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK SO-8 product line, engineered specifically for high-current, high-frequency synchronous rectification in next-generation computing and communications power systems.

FAQ

What is the maximum continuous drain current rating for SIRA60DP-T1-RE3 at 70 °C case temperature?

The SIRA60DP-T1-RE3 is rated for 100 A continuous drain current at T_C = 25 °C and T_C = 70 °C per Absolute Maximum Ratings table. This reflects package-limited current handling, not silicon-limited, and assumes proper PCB thermal design with sufficient copper area on the drain pad.

Does SIRA60DP-T1-RE3 support 5 V gate drive in synchronous rectifier applications?

Yes, the SIRA60DP-T1-RE3 is fully specified for 4.5 V gate drive: R_DS(on) = 1.35 mΩ (max) at V_GS = 4.5 V and I_D = 15 A, and its gate threshold voltage (V_GS(th)) ranges from 1.1 V to 2.2 V, ensuring strong enhancement-mode turn-on with standard 5 V controllers.

Is SIRA60DP-T1-RE3 pin-compatible with standard SO-8 MOSFETs?

Yes - the SIRA60DP-T1-RE3 uses the PowerPAK® SO-8 Single package, which maintains identical pin count, pin spacing (1.27 mm), and outline dimensions (5.15 mm × 6.15 mm) as standard SO-8. Pin functions (G, S, D) match, and it mounts directly to existing SO-8 land patterns without modification.

What is the thermal resistance from junction to case (R_thJC) for SIRA60DP-T1-RE3?

The SIRA60DP-T1-RE3 has a typical junction-to-case (drain) thermal resistance of 1.2 °C/W and a maximum of 1.6 °C/W, measured under steady-state conditions. This value is enabled by the exposed copper drain pad on the bottom side of the PowerPAK SO-8 package.

Can SIRA60DP-T1-RE3 be used in avalanche-rated circuits?

Yes - the SIRA60DP-T1-RE3 is 100% UIS (Unclamped Inductive Switching) tested per datasheet, with a rated single-pulse avalanche energy E_AS = 80 mJ and I_AS = 40 A (L = 0.1 mH). This makes it suitable for circuits subject to inductive turn-off stress, such as motor drives and non-synchronous flyback snubbers.

SIRA60DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.94mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 7650 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIRA60DP-T1-RE3 FAQ

1.How can I place an order for SIRA60DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIRA60DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIRA60DP-T1-RE3 reliable?

The price and inventory of SIRA60DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIRA60DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIRA60DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIRA60DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIRA60DP-T1-RE3?

SIRA60DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIRA60DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIRA60DP-T1-RE3?

For technical support, including SIRA60DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIRA60DP-T1-RE3 requirements.

6.How does Aetrix verify that SIRA60DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIRA60DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIRA60DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIRA60DP-T1-RE3?

All SIRA60DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIRA60DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIRA60DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIRA60DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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