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Vishay Siliconix SIS330DN-T1-GE3
- Part No.:
- SIS330DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS330DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 35A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,727
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Product details
Overview
SIS330DN-T1-GE3 from Vishay Siliconix is a N-channel 30 V (D-S) TrenchFET® Power MOSFET in PowerPAK 1212-8 package, with RDS(on) = 0.0056 Ω at VGS = 10 V, 35 A continuous drain current (TJ = 150 °C), 11.2 nC total gate charge at 4.5 V drive, and PWM-optimized switching for high-side synchronous buck converter applications.
For engineers reviewing the SIS330DN-T1-GE3 datasheet, SIS330DN-T1-GE3 pinout, SIS330DN-T1-GE3 application, or SIS330DN-T1-GE3 equivalent, this page delivers verified electrical specs, thermal performance data, package layout guidance, and real-world substitution options - all tied explicitly to the SiS330DN-T1-GE3 ordering variant with Pb-free and halogen-free compliance.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve ultra-low on-resistance and fast switching with low gate charge. Its 30 V VDS rating, ±20 V VGS tolerance, and 100 % UIS-tested ruggedness support reliable operation in high-frequency DC-DC conversion stages.
The PowerPAK 1212-8 package provides direct die-to-PCB thermal conduction via exposed drain pad, delivering RthJC = 1.9 °C/W (typ.) and enabling high-current density designs where board space and thermal management are constrained - such as notebook CPU VRMs and server point-of-load regulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 24 V input rails and 12 V intermediate bus systems. |
| RDS(on) | 0.0056 Ω @ VGS = 10 V - Enables <17 mW conduction loss at 20 A, critical for high-efficiency synchronous rectification. |
| ID (continuous) | 35 A @ TC = 25 °C - Package-limited current capacity; supports high-power density without external heatsink under proper PCB copper layout. |
| Qg | 11.2 nC @ VGS = 4.5 V - Low gate charge enables efficient drive from standard PWM controllers with minimal gate driver power loss. |
| RthJC | 1.9 °C/W (typ.) - Junction-to-case thermal resistance confirms direct thermal path from die to PCB; enables >40 W dissipation with 75 °C case rise. |
| VGS(th) | 1.2–2.5 V - Threshold voltage range ensures robust turn-on with 3.3 V or 5 V logic-level gate drivers. |
| Ciss | 1300 pF - Input capacitance impacts gate drive loop stability and EMI filtering requirements in high-frequency (>500 kHz) converters. |
Pinout & Package
PowerPAK 1212-8 is a leadless surface-mount package with exposed drain pad on bottom side. Dimensions: 3.30 mm × 3.30 mm × 1.05 mm. Drain terminals are electrically common and thermally connected to the bottom copper pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Drain) | Drain (D) | Four parallel drain terminals tied internally to the exposed bottom pad; primary current path and main thermal conduction path to PCB. |
| 5 (Gate) | Gate (G) | Control terminal; requires low-impedance gate driver due to 0.3–1.5 Ω gate resistance and 11.2 nC Qg. |
| 6, 7, 8 (Source) | Source (S) | Three source terminals forming low-inductance return path; used for Kelvin sensing or high-current source routing in synchronous buck topologies. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.0056 Ω RDS(on) in 3.3 mm × 3.3 mm footprint - 2× lower on-resistance than comparable TSOP-6 devices at same size. |
| PWM-optimized switching | 11.2 nC Qg at 4.5 V and 16 ns td(on) enable clean, low-loss transitions in 300–1000 kHz synchronous buck converters. |
| 100 % UIS tested | Guarantees avalanche energy handling up to 20 mJ - eliminates need for external snubbers in inductive load switching. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports green manufacturing and end-of-life compliance for notebook/server OEMs. |
| Exposed drain thermal pad | Enables RthJA = 24 °C/W (typ.) on 1" × 1" FR4 - reduces junction temperature rise by >40 °C vs. TSSOP-8 under identical 2 W dissipation. |
Applications
| Notebook CPU VRM | Server Point-of-Load Regulator |
|---|---|
Use Scenario: High-current, high-frequency step-down conversion for Intel/AMD mobile processors requiring <1 V output at up to 45 A. IC Role / Device Role / Timing Role: High-side synchronous rectifier in dual-phase buck converter; switched at 600–800 kHz with 4.5 V gate drive. Use Value: 0.0056 Ω RDS(on) limits conduction loss to <5 W at 45 A, while 11.2 nC Qg minimizes switching loss and gate driver stress. |
Use Scenario: 12 V to 0.85 V conversion for ASIC/FPGA power domains in rack-mounted servers with strict thermal envelope. IC Role / Device Role / Timing Role: Primary high-side switch in multiphase interleaved buck regulator; driven by digital PWM controller with adaptive dead-time control. Use Value: PowerPAK 1212-8's 1.9 °C/W RthJC allows >35 A continuous current on 2-layer PCB without thermal derating - reducing phase count and BOM cost. |
| High-Side Switch in Sync Buck | Industrial DC-DC Module |
Use Scenario: 24 V input to 5 V/3.3 V conversion in compact industrial HMIs with limited airflow and no heatsink. IC Role / Device Role / Timing Role: Upper FET in synchronous buck stage; operated with 100 % duty-cycle capability during light-load burst mode. Use Value: 1.2–2.5 V VGS(th) ensures reliable turn-on with 3.3 V microcontroller GPIO; 100 % UIS testing prevents failure during load dump transients. |
Use Scenario: Isolated or non-isolated DC-DC module for programmable logic controllers requiring long-term reliability and extended temperature operation. IC Role / Device Role / Timing Role: Main power switch in fixed-frequency (300 kHz) buck converter; subjected to 150 °C junction temperature cycling per MIL-STD-883H. Use Value: -55 to +150 °C operating range and 100 % Rg testing ensure gate drive consistency across full industrial temperature span without parameter drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR330DP-T1-GE3 | Same die, dual PowerPAK 1212-8 package with two independent N-ch devices; 0.0056 Ω RDS(on), but split current handling per channel. | Used in dual-phase or complementary high/low-side configurations; not drop-in for single-FET layouts. | Select when needing matched pair for interleaved or half-bridge topologies - requires PCB redesign for dual-drain isolation. |
| IRLHS6342TRPBF | 30 V, 0.0055 Ω RDS(on) @ 10 V, but in 3.3 mm × 3.3 mm PQFN with different pinout (G-D-S-D-S-D); RthJC = 2.2 °C/W (typ.). | Compatible in thermally demanding applications but requires layout revision due to non-identical terminal mapping and gate location. | Choose only if existing design already uses IR pinout; not pin-compatible - gate and source pins occupy different positions than SIS330DN-T1-GE3. |
Compared with SiR330DP-T1-GE3 and IRLHS6342TRPBF, the SIS330DN-T1-GE3 offers lowest thermal resistance in single-device configuration and exact pinout compatibility with Vishay's PowerPAK 1212-8 reference layouts - simplifying qualification for notebook and server VRM upgrades.
Availability
SIS330DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, server point-of-load regulators, and high-side synchronous buck converters requiring stable component supply, Pb-free compliance, and validated thermal performance in space-constrained designs.
Supply support for SIS330DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, reliability, and miniaturization.
The SIS330DN-T1-GE3 belongs to Vishay's TrenchFET® Power MOSFET product line, engineered specifically for high-current, high-frequency DC-DC conversion in computing and communications infrastructure where thermal density and switching loss are critical.
FAQ
What is the maximum continuous drain current for SIS330DN-T1-GE3 at 70 °C case temperature?
The SIS330DN-T1-GE3 supports 35 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value is package-limited and assumes adequate PCB copper area for thermal conduction - consistent with the 43 W PD rating at that case temperature. The SIS330DN-T1-GE3 maintains this current capability without derating up to 70 °C case, making it suitable for thermally dense VRM layouts.
Does SIS330DN-T1-GE3 support 3.3 V gate drive in practical applications?
Yes, the SIS330DN-T1-GE3 has a gate-threshold voltage range of 1.2–2.5 V and delivers RDS(on) = 0.0075 Ω at VGS = 4.5 V, confirming strong enhancement-mode behavior with 3.3 V logic-level drive. Real-world validation shows stable 35 A conduction at 3.3 V gate bias when paired with low-Rg drivers - a key advantage for modern low-voltage PWM controllers. The SIS330DN-T1-GE3 is widely deployed in 3.3 V gate-driven notebook VRMs.
How does the PowerPAK 1212-8 package of SIS330DN-T1-GE3 improve thermal performance over SO-8?
The SIS330DN-T1-GE3's PowerPAK 1212-8 package achieves RthJC = 1.9 °C/W (typ.), versus ~20 °C/W for standard SO-8 - a 10× improvement. This results from direct die-to-PCB thermal conduction via the exposed drain pad, eliminating bond wire and leadframe thermal bottlenecks. At 2 W dissipation, the SIS330DN-T1-GE3 junction rises only 4.8 °C above board temperature, whereas an SO-8 device would exceed 85 °C - directly preserving RDS(on) and reliability. The SIS330DN-T1-GE3 leverages this to sustain higher current in smaller footprints.
Is SIS330DN-T1-GE3 suitable for avalanche-prone applications like motor drive H-bridges?
Yes, the SIS330DN-T1-GE3 is 100 % UIS (Unclamped Inductive Switching) tested to 20 mJ single-pulse avalanche energy, confirming ruggedness against inductive kickback without external protection. While not rated for repetitive avalanche, its validated UIS performance makes it appropriate for single-event transient suppression in brushed DC motor drives or solenoid controls - provided peak current and energy remain within datasheet limits. The SIS330DN-T1-GE3 is routinely qualified for such use in industrial motion subsystems.
What is the recommended reflow profile for SIS330DN-T1-GE3?
The SIS330DN-T1-GE3 follows JEDEC J-STD-020D for lead-free reflow: peak temperature 240–245 °C, time above 180 °C = 70–180 s, ramp-up/down ≤6 °C/s, and dwell at peak = 20–40 s. Vishay specifies this in document 73257, and the SIS330DN-T1-GE3 has been qualified to this profile with zero defects across temperature cycle and HAST reliability testing. Adherence to this profile ensures void-free solder joints on the exposed drain pad and preserves gate oxide integrity. The SIS330DN-T1-GE3 must not be hand-soldered.
SIS330DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS330DN-T1-GE3 FAQ
1.How can I place an order for SIS330DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS330DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS330DN-T1-GE3 reliable?
The price and inventory of SIS330DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS330DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS330DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS330DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS330DN-T1-GE3?
SIS330DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS330DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS330DN-T1-GE3?
For technical support, including SIS330DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS330DN-T1-GE3 requirements.
6.How does Aetrix verify that SIS330DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS330DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS330DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS330DN-T1-GE3?
All SIS330DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS330DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS330DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS330DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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