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Vishay Siliconix SIS334DN-T1-GE3
- Part No.:
- SIS334DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS334DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 20A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:7,450
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Product details
Overview
SIS334DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in a leadless PowerPAK® 1212-8 package, rated for 20 A continuous drain current at TC = 25 °C, with RDS(on) = 0.0113 Ω at VGS = 10 V and 0.0146 Ω at VGS = 4.5 V, designed for high-side synchronous buck converters in notebook point-of-load (POL) applications.
For engineers reviewing the SIS334DN-T1-GE3 datasheet, SIS334DN-T1-GE3 pinout, SIS334DN-T1-GE3 application, or SIS334DN-T1-GE3 equivalent, key selection criteria include its ultra-low RDS(on) at 4.5 V gate drive, 100 % Rg and UIS tested reliability, halogen-free and RoHS-compliant construction, and thermal performance enabled by the exposed-drain PowerPAK 1212-8 footprint.
Technical Context
This MOSFET employs Vishay's TrenchFET® silicon process to achieve low on-resistance and fast switching with Qg = 5.1 nC (VGS = 4.5 V) and tf = 8–16 ns, supporting high-frequency POL operation. Its gate threshold voltage (VGS(th) = 1.2–2.4 V) ensures stable turn-on under typical 3.3 V or 5 V controller gate drive.
The device features a robust body diode with VSD = 0.76–1.1 V at IS = 3 A and trr = 15–30 ns, enabling efficient synchronous rectification. Thermal design leverages the PowerPAK 1212-8's RthJC = 2.0–2.5 °C/W (steady-state) and RthJA = 27–33 °C/W (t ≤ 10 s), optimized for direct board conduction via the exposed copper drain pad.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage compatible with 24 V input rails and transient margin in notebook POL stages. |
| RDS(on) @ VGS = 10 V | 0.0113 Ω - Enables <1 W conduction loss at 10 A, critical for high-efficiency 90+% DC/DC conversion. |
| RDS(on) @ VGS = 4.5 V | 0.0146 Ω - Ensures low on-resistance with standard 5 V gate drivers, eliminating need for level-shifting in compact designs. |
| ID Continuous (TC = 25 °C) | 20 A - Supports high-current POL outputs up to ~50 W without external heatsinking when mounted on ≥1" × 1" FR4. |
| Qg (VGS = 4.5 V) | 5.1 nC - Minimizes gate drive power and enables >1 MHz switching in space-constrained notebook VRMs. |
| RthJC | 2.0–2.5 °C/W - Provides direct thermal path from junction to PCB copper, reducing ΔTJ-A by >40 °C vs. TSSOP-8 equivalents. |
| Body Diode trr | 15–30 ns - Limits reverse recovery losses during dead-time, improving efficiency in synchronous buck topologies. |
Pinout & Package
Package: PowerPAK® 1212-8 - leadless, surface-mount package with exposed copper drain pad on bottom side; footprint 3.30 mm × 3.30 mm; height 1.05 mm; thermal performance optimized for direct PCB copper conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Drain) | Power Drain Terminal (common) | All four pins connect internally to the large exposed copper drain pad - must be soldered to a dedicated thermal land for optimal RthJC. |
| 5 (Gate) | Control Input | High-impedance MOS gate requiring low-inductance layout; Rg = 0.4–3.0 Ω specified for EMI control and dV/dt immunity. |
| 6 (Source) | Reference Node / Return Path | Source terminal tied to power ground plane; serves as return for gate drive and body diode current; low-inductance connection essential for stability. |
| 7, 8 (Drain) | Power Drain Terminal (common) | Continuation of same internal drain node; all eight terminals (pins 1–4 and 7–8) are electrically identical and thermally coupled to the bottom pad. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon technology | Delivers industry-leading RDS(on) × Qg figure-of-merit for high-frequency POL efficiency without sacrificing ruggedness. |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and single-pulse avalanche energy rating (EAS = 11.25 mJ) for reliable operation under transient overloads. |
| PowerPAK® 1212-8 package | Reduces thermal resistance by >80 % vs. TSSOP-8 while occupying 40 % less area - ideal for ultra-thin notebook VRM layouts. |
| Halogen-free & RoHS-compliant | Fulfills IEC 61249-2-21 and Directive 2002/95/EC requirements for environmentally constrained consumer electronics manufacturing. |
| Low VGS(th) tolerance (1.2–2.4 V) | Ensures consistent turn-on across temperature and process variation with standard 3.3 V or 5 V controllers, minimizing shoot-through risk. |
Applications
| Notebook Point-of-Load (POL) | Server VRM High-Side Switch |
|---|---|
|
Use Scenario: Primary high-side switch in 3-phase 5 V or 12 V input synchronous buck converter supplying CPU core voltage in ultrabook platforms. IC Role / Device Role / Timing Role: Main power switch conducting high-frequency (500 kHz–1.5 MHz) PWM current; operates in hard-switched mode with precise gate timing control. Use Value: Ultra-low RDS(on) at 4.5 V gate drive reduces conduction loss by >25 % vs. comparable TSSOP-8 MOSFETs, directly increasing system efficiency and reducing thermal load on thin PCBs. |
Use Scenario: High-side switch in server motherboard VRM delivering 50–100 A to ASICs/FPGAs with tight voltage regulation (<±10 mV). IC Role / Device Role / Timing Role: Fast-turning power switch synchronized to controller's PWM signal; handles high peak currents (IDM = 50 A) during load transients. Use Value: Low Qg (5.1 nC) and fast tf (8–16 ns) minimize switching loss and enable tighter dead-time control, improving dynamic response and output voltage accuracy. |
| Industrial DC/DC Converter | Automotive Infotainment POL |
|
Use Scenario: High-efficiency 24 V-to-5 V step-down converter powering industrial PLC I/O modules in thermally isolated enclosures. IC Role / Device Role / Timing Role: Main switching element operating at 300–600 kHz; subjected to wide ambient temperature range (−40 °C to +85 °C). Use Value: Stable RDS(on) temperature coefficient and −55 °C to +150 °C TJ rating ensure consistent performance across industrial temperature extremes without derating. |
Use Scenario: Compact 12 V-to-3.3 V POL regulator supplying display driver ICs and audio codecs in automotive head units. IC Role / Device Role / Timing Role: High-side MOSFET in space-constrained, vibration-prone environment; requires AEC-Q101 stress qualification (note: SIS334DN-T1-GE3 is not AEC-Q101 qualified per datasheet). Use Value: PowerPAK 1212-8's mechanical robustness and low profile (1.05 mm) withstand board flex and thermal cycling, while halogen-free construction meets automotive material compliance standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR334DP-T1-GE3 | Same die, dual-die PowerPAK 1212-8 Dual package; RDS(on) = 0.0113 Ω per channel at VGS = 10 V; higher total Qg (10.2 nC) due to dual gate structure. | Designed for dual-phase or half-bridge configurations; occupies same footprint but delivers two independent switches. | Select SiR334DP-T1-GE3 only when dual-switch topology is required; not a drop-in replacement for single-switch SIS334DN-T1-GE3. |
| IRLML6344TRPBF | 30 V N-channel in Micro3™ (SOT-23); RDS(on) = 0.035 Ω @ 4.5 V; ID = 4.3 A; Qg = 3.3 nC; significantly higher RDS(on) and lower current capability. | Targeted at low-power logic-level switching (≤5 W), not high-current POL; lacks thermal performance for sustained >10 A operation. | Choose IRLML6344TRPBF only for cost-sensitive, low-current applications where board space is secondary to BOM cost; not suitable for notebook POL replacement. |
Compared with SiR334DP-T1-GE3, SIS334DN-T1-GE3 offers single-switch simplicity and lower gate charge for faster switching in monolithic buck stages; compared with IRLML6344TRPBF, it delivers >4× higher current capacity and >3× lower conduction loss, making it viable for 20–50 W POL systems where thermal density is critical.
Availability
SIS334DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook point-of-load (POL) regulators, server VRM high-side switching, and industrial DC/DC converters requiring stable component supply, high thermal efficiency, and RoHS/halogen-free compliance.
Supply support for SIS334DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal management, and reliability.
The SIS334DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® 1212-8 family, engineered specifically for high-current, high-frequency DC/DC conversion in space- and thermally constrained computing and industrial applications.
FAQ
What is the maximum continuous drain current rating for SIS334DN-T1-GE3 at 70 °C case temperature?
The SIS334DN-T1-GE3 is rated for 20 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with adequate copper area on the drain pad to maintain junction temperature ≤150 °C under steady-state conditions.
Does SIS334DN-T1-GE3 support 3.3 V gate drive in practical applications?
Yes, the SIS334DN-T1-GE3 has a gate threshold voltage (VGS(th)) of 1.2–2.4 V and RDS(on) = 0.0146 Ω at VGS = 4.5 V, making it fully compatible with 3.3 V logic-level gate drivers. At 3.3 V, typical RDS(on) increases to ~0.022 Ω (per typical curves), still enabling efficient operation in medium-current POL stages.
What is the recommended PCB land pattern for the PowerPAK 1212-8 package of SIS334DN-T1-GE3?
Vishay recommends extending the drain pad land beyond the outline - typically 0.3–0.5 in² (≈200–320 mm²) of solid copper on inner layers - to optimize thermal performance. Minimum patterns are defined in Application Note AN826; exceeding 0.5 in² yields diminishing returns in RthJA reduction for standard 4-layer FR4 boards.
Is SIS334DN-T1-GE3 qualified for automotive applications per AEC-Q101?
No, the SIS334DN-T1-GE3 is not AEC-Q101 qualified. The datasheet specifies operation from −55 °C to +150 °C and lists no automotive qualification testing. For automotive infotainment or body electronics, engineers must select Vishay's AEC-Q101-qualified equivalents such as the SQ series.
How does the body diode performance of SIS334DN-T1-GE3 impact synchronous buck efficiency?
The SIS334DN-T1-GE3 body diode exhibits VSD = 0.76–1.1 V at IS = 3 A and trr = 15–30 ns, which minimizes reverse recovery loss during dead-time. In synchronous buck operation, this reduces shoot-through risk and conduction loss compared to MOSFETs with slower or higher-VF body diodes, directly improving light-load efficiency.
SIS334DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 640 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS334DN-T1-GE3 FAQ
1.How can I place an order for SIS334DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS334DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS334DN-T1-GE3 reliable?
The price and inventory of SIS334DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS334DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS334DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS334DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS334DN-T1-GE3?
SIS334DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS334DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS334DN-T1-GE3?
For technical support, including SIS334DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS334DN-T1-GE3 requirements.
6.How does Aetrix verify that SIS334DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS334DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS334DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS334DN-T1-GE3?
All SIS334DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS334DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS334DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS334DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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