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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS436DN-T1-GE3

Name: SIS436DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS436DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS436DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS436DN-T1-GE3.pdf

Description:: MOSFET N-CH 25V 16A PPAK 1212-8

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Product details

Overview

SIS436DN-T1-GE3 from Vishay Siliconix is a N-channel 25-V TrenchFET® Gen III Power MOSFET in PowerPAK® 1212-8 package, delivering R_DS(on) = 10.5 mΩ at V_GS = 10 V and 13 mΩ at V_GS = 4.5 V, with 16 A continuous drain current (T_C = 25 °C) and 6.7 nC total gate charge - optimized for high-efficiency DC/DC conversion in space-constrained power stages.

For engineers reviewing the SIS436DN-T1-GE3 datasheet, SIS436DN-T1-GE3 pinout, SIS436DN-T1-GE3 application, or SIS436DN-T1-GE3 equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V drive, 100 % UIS-tested ruggedness, halogen-free construction, and thermal performance enabled by the exposed-drain PowerPAK 1212-8 footprint.

Technical Context

This MOSFET employs TrenchFET® Gen III silicon technology to achieve low on-resistance with fast switching dynamics: Q_g = 6.7 nC (V_GS = 4.5 V), t_r = 12–24 ns, and t_f = 10–20 ns under standard test conditions. Its gate threshold voltage (V_GS(th) = 1.0–2.3 V) supports logic-level drive compatibility.

The device features 100 % avalanche energy testing (E_AS = 11.25 mJ), 100 % gate resistance (R_g) screening (0.2–1.8 Ω), and is qualified for operation from –55 °C to +150 °C. Thermal design leverages the PowerPAK 1212-8's low R_thJC = 3.6 °C/W (typ.) and R_thJA = 29 °C/W (t ≤ 10 s).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 3.3 V and 5 V input DC/DC stages.
R_DS(on) @ V_GS = 10 V	10.5 mΩ - Enables <1 W conduction loss at 10 A in high-current synchronous rectifiers.
R_DS(on) @ V_GS = 4.5 V	13 mΩ - Supports efficient operation with 3.3 V or 5 V gate drivers without level-shifting.
I_D (continuous, T_C = 25 °C)	16 A - Package-limited current rating suitable for compact 10–15 A power rails.
Q_g (V_GS = 4.5 V)	6.7 nC - Low gate charge reduces driver power loss and enables >1 MHz switching in POL converters.
E_AS	11.25 mJ - Confirmed avalanche energy rating ensures robustness against inductive switching transients.
R_thJC	3.6 °C/W (typ.) - Enables direct heat transfer from die to PCB copper, critical for thermally dense layouts.

Pinout & Package

PowerPAK® 1212-8 is a leadless surface-mount package with an exposed drain pad on the bottom side. Dimensions: 3.30 mm × 3.30 mm × 1.05 mm (L × W × H). The package uses copper clip construction for low-inductance, high-current paths and requires reflow soldering per JEDEC J-STD-020 (peak 240 °C).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (D)	All eight terminals connect to the common drain node; bottom-side exposed pad is electrically and thermally part of Drain - must be soldered to large PCB copper area for thermal and current handling.
3 (Source)	Source (S)	Terminal 3 is the dedicated source connection; used for Kelvin sensing or low-inductance source return in high-frequency designs.
4 (Gate)	Gate (G)	Terminal 4 is the gate control input; layout must minimize trace inductance to preserve switching speed and prevent oscillation.

Key Features

Feature	Design Value
TrenchFET® Gen III silicon	Delivers 13 mΩ R_DS(on) at 4.5 V gate drive - eliminates need for gate boosters in 3.3 V control architectures.
100 % UIS tested	Guarantees survivability under unclamped inductive switching stress up to I_AS = 15 A and E_AS = 11.25 mJ - critical for buck converter high-side reliability.
Halogen-free construction	Complies with IEC 61249-2-21 - meets RoHS and environmental requirements for industrial and telecom end equipment.
PowerPAK® 1212-8 package	Provides 20× lower R_thJA than TSSOP-8 - reduces junction temperature rise by >40 °C vs. legacy packages at same power dissipation.
100 % R_g tested	Ensures gate resistance between 0.2–1.8 Ω - enables predictable turn-on/turn-off timing and minimizes gate driver sizing uncertainty.

Applications

Point-of-Load (POL) Converter	USB-C Power Delivery Sink
Use Scenario: High-density 3.3 V/5 V output stage in server VRMs or FPGA power supplies. IC Role / Device Role: Synchronous rectifier (low-side switch) in buck topology with 500 kHz–2 MHz switching frequency. Use Value: 13 mΩ R_DS(on) at 4.5 V drive reduces conduction loss by 35 % vs. comparable TSSOP-8 MOSFETs, enabling 95 %+ efficiency at 12 A load.	Use Scenario: Input protection and reverse-polarity blocking in 20 V/3 A USB-C PD sink circuits. IC Role / Device Role: Low-side eFuse or hot-swap controller switch with fast fault response. Use Value: 6.7 nC Q_g allows sub-100 ns turn-off with standard gate drivers, meeting USB-C PD 3.1 fast-fault (<10 µs) requirements.
Industrial Motor Driver Half-Bridge	Telecom DC/DC Intermediate Bus Converter
Use Scenario: 24 V BLDC motor gate driver output stage in compact servo drives. IC Role / Device Role: Low-side switch in half-bridge configuration driving gate of high-side N-channel MOSFET. Use Value: 100 % UIS qualification ensures reliable operation during shoot-through fault events and PWM dead-time transitions.	Use Scenario: 48 V-to-12 V intermediate bus converter in 1RU telecom systems. IC Role / Device Role: Primary-side synchronous rectifier in phase-shifted full-bridge or LLC resonant topology. Use Value: Exposed drain pad enables direct thermal coupling to internal ground plane - maintains T_J < 105 °C at 15 A continuous, eliminating external heatsinks.

Point-of-Load (POL) Converter

USB-C Power Delivery Sink

Use Scenario: High-density 3.3 V/5 V output stage in server VRMs or FPGA power supplies.

IC Role / Device Role: Synchronous rectifier (low-side switch) in buck topology with 500 kHz–2 MHz switching frequency.

Use Value: 13 mΩ R_DS(on) at 4.5 V drive reduces conduction loss by 35 % vs. comparable TSSOP-8 MOSFETs, enabling 95 %+ efficiency at 12 A load.

Use Scenario: Input protection and reverse-polarity blocking in 20 V/3 A USB-C PD sink circuits.

IC Role / Device Role: Low-side eFuse or hot-swap controller switch with fast fault response.

Use Value: 6.7 nC Q_g allows sub-100 ns turn-off with standard gate drivers, meeting USB-C PD 3.1 fast-fault (<10 µs) requirements.

Industrial Motor Driver Half-Bridge

Telecom DC/DC Intermediate Bus Converter

Use Scenario: 24 V BLDC motor gate driver output stage in compact servo drives.

IC Role / Device Role: Low-side switch in half-bridge configuration driving gate of high-side N-channel MOSFET.

Use Value: 100 % UIS qualification ensures reliable operation during shoot-through fault events and PWM dead-time transitions.

Use Scenario: 48 V-to-12 V intermediate bus converter in 1RU telecom systems.

IC Role / Device Role: Primary-side synchronous rectifier in phase-shifted full-bridge or LLC resonant topology.

Use Value: Exposed drain pad enables direct thermal coupling to internal ground plane - maintains T_J < 105 °C at 15 A continuous, eliminating external heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 25-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiSD320DN-T1-GE3	R_DS(on) = 12.5 mΩ @ 4.5 V; Q_g = 7.3 nC; same PowerPAK 1212-8 package.	Slightly higher conduction loss but identical thermal footprint - suitable when margin exists in R_DS(on) budget.	Select SiSD320DN-T1-GE3 only if lower gate charge is not required and cost optimization is prioritized.
DMN2012LFG-7	R_DS(on) = 14.5 mΩ @ 4.5 V; Q_g = 5.8 nC; PowerDI™ 3333 package (3.3 mm × 3.3 mm, 0.9 mm height).	Lower gate charge but higher R_DS(on); different thermal interface (no exposed drain pad) limits PCB heat spreading.	Choose DMN2012LFG-7 only for ultra-low-Q_g priority where thermal derating is managed via forced air or thicker copper.

Compared with SiSD320DN-T1-GE3 and DMN2012LFG-7, the SIS436DN-T1-GE3 offers the lowest R_DS(on) at 4.5 V among these three while maintaining identical board area and superior thermal path - making it optimal for high-current, thermally constrained DC/DC designs where efficiency and junction temperature are limiting factors.

Availability

SIS436DN-T1-GE3 is available at Aetrix Electronics and suitable for point-of-load converters, USB-C power delivery systems, industrial motor drivers, and telecom intermediate bus converters requiring stable component supply, Pb-free/halogen-free compliance, and high-reliability power switching.

Supply support for SIS436DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and miniaturization.

The SIS436DN-T1-GE3 belongs to Vishay's TrenchFET® Gen III Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in space- and thermally-constrained applications such as servers, telecom infrastructure, and portable electronics.

FAQ

What is the maximum continuous drain current rating for SIS436DN-T1-GE3 at 70 °C case temperature?

The SIS436DN-T1-GE3 supports 16 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and does not require derating below T_C = 70 °C. At ambient temperature (T_A = 25 °C), the rated current drops to 13.6 A due to higher thermal resistance to ambient.

Does SIS436DN-T1-GE3 support logic-level gate drive?

Yes, the SIS436DN-T1-GE3 is fully compatible with logic-level gate drive: its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.3 V, and it delivers R_DS(on) = 13 mΩ at V_GS = 4.5 V - enabling direct drive from 3.3 V or 5 V microcontrollers and gate drivers without level-shifting circuitry.

What is the thermal resistance from junction to case (R_thJC) for SIS436DN-T1-GE3?

The SIS436DN-T1-GE3 has a typical junction-to-case thermal resistance (R_thJC) of 3.6 °C/W and a maximum of 4.5 °C/W. This value is measured from the silicon junction to the exposed drain pad - which serves as the primary thermal path - and assumes proper soldering to a large PCB copper area per Vishay's recommended land pattern.

Is SIS436DN-T1-GE3 suitable for avalanche energy handling in inductive switching applications?

Yes, the SIS436DN-T1-GE3 is 100 % tested for unclamped inductive switching (UIS) and rated for 11.25 mJ avalanche energy (E_AS) at T_J = 25 °C. This makes it suitable for applications like buck converter freewheeling, motor drive flyback, and relay driving where transient inductive energy must be safely absorbed by the MOSFET.

What is the gate-to-source leakage current specification for SIS436DN-T1-GE3?

The gate-to-source leakage current (I_GSS) for SIS436DN-T1-GE3 is ±100 nA maximum at V_GS = ±20 V and T_J = 25 °C. This low leakage ensures minimal gate driver quiescent current and stable gate bias under high-impedance control conditions.

SIS436DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 855 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 27.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS436DN-T1-GE3 FAQ

1.How can I place an order for SIS436DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS436DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS436DN-T1-GE3 reliable?

The price and inventory of SIS436DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS436DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS436DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS436DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS436DN-T1-GE3?

SIS436DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS436DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS436DN-T1-GE3?

For technical support, including SIS436DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS436DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS436DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS436DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS436DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS436DN-T1-GE3?

All SIS436DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS436DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS436DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS436DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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