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Vishay Siliconix SIS447DN-T1-GE3
- Part No.:
- SIS447DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS447DN-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 18A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,720
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Product details
Overview
SIS447DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in PowerPAK® 1212-8 package, rated for -20 V VDS, 0.0071 Ω RDS(on) at VGS = -10 V, and -18 A continuous drain current at TC = 25 °C. It serves as a high-efficiency load or battery switch in compact power management circuits.
For engineers reviewing the SIS447DN-T1-GE3 datasheet, SIS447DN-T1-GE3 pinout, SIS447DN-T1-GE3 application, or SIS447DN-T1-GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 57.5 nC total gate charge, robust UIS rating, and thermal performance enabled by the exposed-drain PowerPAK 1212-8 package.
Technical Context
This device uses TrenchFET® Gen III silicon technology to achieve low on-resistance and fast switching with controlled gate charge (Qg = 57.5 nC typ. at VGS = -4.5 V). Its -1.2 V maximum VGS(th) enables reliable turn-on with logic-level gate drivers in high-side or reverse-polarity protection configurations.
The PowerPAK 1212-8 package features an exposed drain pad for direct thermal conduction to PCB copper, delivering RthJC = 1.9 °C/W (typ.) and RthJA = 26 °C/W (typ., t ≤ 10 s), enabling high-current operation without external heatsinking in space-constrained designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for battery-switch and reverse-polarity protection applications |
| RDS(on) max | 0.0071 Ω at VGS = -10 V - Enables <17 mW conduction loss at 10 A, critical for high-efficiency load switching |
| ID continuous | -18 A at TC = 25 °C - Supports high-current power rails in portable and industrial systems |
| Qg typ. | 57.5 nC at VGS = -4.5 V - Determines gate driver sizing and switching loss in PWM-controlled switches |
| VGS(th) | -0.4 to -1.2 V - Ensures full enhancement with 3.3 V or 5 V logic-level gate drive |
| RthJC | 1.9 °C/W (typ.) - Allows direct junction-to-PCB thermal path for high-power density layouts |
| EAS | 20 mJ - Confirms ruggedness against inductive switching stress in load-dump or motor-drive scenarios |
Pinout & Package
Package: PowerPAK® 1212-8 (3.3 mm × 3.3 mm × 1.05 mm), leadless, exposed-drain configuration with solderable copper bottom surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6, 7, 8 | Drain (D) | Internally connected to exposed bottom pad - primary current path and thermal conduction path to PCB |
| 4 | Gate (G) | Control terminal - requires <1.2 V negative bias relative to source to fully enhance |
| - | Source (S) | Terminals 1–3 and 5 are Source-connected pins - provide low-inductance return path and mechanical anchoring |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen III process | Delivers industry-leading RDS(on) × Qg figure of merit for optimized switching efficiency at 4.5 V drive |
| 100 % Rg and UIS tested | Ensures gate robustness and avalanche energy handling (EAS = 20 mJ) in real-world transient conditions |
| Exposed-drain PowerPAK 1212-8 | Reduces RthJC to 1.9 °C/W (typ.), enabling >15 W dissipation on standard 4-layer FR4 without heatsink |
| VGS(th) range (-0.4 to -1.2 V) | Guarantees turn-on with 3.3 V microcontroller outputs, eliminating need for level-shifting circuitry |
| Lead (Pb)-free and Halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709C for environmentally constrained designs |
Applications
| Battery Protection Switch | Reverse Polarity Protection |
|---|---|
Use Scenario: Used in USB-C PD power banks and portable medical devices to disconnect battery during overvoltage, overtemperature, or short-circuit events. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active disconnect switch, controlled by battery management IC. Use Value: Low 0.0071 Ω RDS(on) minimizes voltage drop and self-heating during sustained 15 A discharge, extending runtime and thermal margin. | Use Scenario: Placed between input connector and system rail in industrial sensors and automotive ECUs to block reverse-connected power supplies. IC Role / Device Role / Timing Role: Reverse-biased P-channel MOSFET providing passive polarity guard with near-zero forward voltage drop. Use Value: Body diode VSD = -0.72 V (typ.) at -4 A ensures minimal insertion loss, while -20 V VDS rating covers 12 V and 24 V nominal systems with margin. |
| Hot-Swap Load Switch | Power-Rail Sequencing |
Use Scenario: Controls power-up sequencing of FPGA I/O banks or DDR memory modules in telecom baseband cards. IC Role / Device Role / Timing Role: Controlled load switch enabling inrush current limiting and fault isolation via gate slew-rate control. Use Value: Gate charge Qg = 57.5 nC allows precise RC-based turn-on timing; 100 % UIS testing ensures reliability during hot-plug transients. | Use Scenario: Enables ordered power-up of core and I/O voltage domains in embedded processors and SoM modules. IC Role / Device Role / Timing Role: P-channel MOSFET driven by sequencer GPIO to delay activation of secondary rails until primary rail stabilizes. Use Value: Tight VGS(th) distribution (-0.4 to -1.2 V) guarantees consistent turn-on threshold across temperature and lot, preventing premature or delayed sequencing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiS445DN-T1-GE3 | RDS(on) = 0.0085 Ω @ -10 V; Qg = 52 nC; same PowerPAK 1212-8 package | Slightly higher conduction loss but lower gate charge - better for high-frequency PWM switching | Select when switching frequency >500 kHz dominates over conduction loss in thermal budget |
| DMTH6005LPS-13 | RDS(on) = 0.0055 Ω @ -10 V; SO-8 package; RthJA = 50 °C/W (typ.) | Lower RDS(on) but larger footprint and worse thermal resistance - requires more board area and/or heatsinking | Select only if board layout permits SO-8 and thermal design accommodates higher junction rise |
Compared with SiS445DN-T1-GE3, SIS447DN-T1-GE3 offers lower RDS(on) for reduced conduction loss in DC or low-frequency loads; compared with DMTH6005LPS-13, it delivers superior thermal performance per mm², enabling higher power density in space-limited applications.
Availability
SIS447DN-T1-GE3 is available at Aetrix Electronics and suitable for battery protection, reverse polarity guard, and hot-swap load switching applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for SIS447DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SIS447DN-T1-GE3 belongs to Vishay's TrenchFET® Gen III P-channel MOSFET family, engineered specifically for high-current, low-voltage load switching in space-constrained and thermally demanding environments.
FAQ
What is the maximum continuous drain current rating for SIS447DN-T1-GE3 at 70 °C case temperature?
The SIS447DN-T1-GE3 supports -18 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating due to thermal limits and remains unchanged from the 25 °C value because the device's thermal design maintains junction temperature within safe limits under typical PCB copper layouts.
Does SIS447DN-T1-GE3 require a gate resistor for reliable switching in a 3.3 V microcontroller-driven load switch?
A gate resistor is recommended with SIS447DN-T1-GE3 to control dV/dt and prevent oscillation, especially given its 0.4–3.5 Ω gate resistance and 57.5 nC gate charge. For 3.3 V GPIO driving, a 10–47 Ω series resistor balances turn-on speed and EMI, ensuring clean transitions without shoot-through in half-bridge configurations.
Can SIS447DN-T1-GE3 be used in linear regulation mode, and what is its safe operating area (SOA) limitation?
SIS447DN-T1-GE3 is not optimized for linear regulation; its SOA curve shows DC operation limited to ~2.4 W at 25 °C ambient. In linear mode, power dissipation must stay below the derated PD limit (e.g., 2.4 W at TA = 70 °C), and junction temperature must remain ≤150 °C. Pulse operation up to 100 A is allowed for ≤100 μs, per the IDM rating.
What is the body diode forward voltage of SIS447DN-T1-GE3, and how does it affect reverse-polarity protection performance?
The SIS447DN-T1-GE3 body diode exhibits VSD = -0.72 V (typ.) at -4 A and 25 °C. In reverse-polarity protection, this low forward voltage minimizes power loss and heating during fault conditions, while the -20 V VDS rating ensures safe blocking of reversed 12 V or 24 V inputs without breakdown.
Is SIS447DN-T1-GE3 compatible with lead-free reflow profiles, and what is the peak temperature specification?
Yes, SIS447DN-T1-GE3 is qualified for lead-free reflow with a maximum peak temperature of 240 °C (±0 °C tolerance), per Vishay document 73257. The profile specifies 20–40 seconds dwell time above 217 °C and ramp-down ≤6 °C/s, fully compliant with JEDEC J-STD-020D.3 for MSL Level 1.
SIS447DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 181 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5590 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS447DN-T1-GE3 FAQ
1.How can I place an order for SIS447DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS447DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS447DN-T1-GE3 reliable?
The price and inventory of SIS447DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS447DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS447DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS447DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS447DN-T1-GE3?
SIS447DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS447DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS447DN-T1-GE3?
For technical support, including SIS447DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS447DN-T1-GE3 requirements.
6.How does Aetrix verify that SIS447DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS447DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS447DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS447DN-T1-GE3?
All SIS447DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS447DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS447DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS447DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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