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Vishay Siliconix SIS4604LDN-T1-GE3
- Part No.:
- SIS4604LDN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS4604LDN-T1-GE3.pdf
- Description:
- N-CHANNEL 60 V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:13,827
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Product details
Overview
SIS4604LDN-T1-GE3 from Vishay Siliconix is an N-channel 60 V TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8 package, delivering 45.9 A continuous drain current at TC = 25 °C, RDS(on) of 0.0089 Ω at VGS = 10 V, and 8.5 nC total gate charge at VGS = 4.5 V. It serves as a primary-side switch or synchronous rectifier in high-efficiency DC/DC converters.
For engineers reviewing the SIS4604LDN-T1-GE3 datasheet, SIS4604LDN-T1-GE3 pinout, SIS4604LDN-T1-GE3 application, or SIS4604LDN-T1-GE3 equivalent, key selection criteria include its low RDS(on) × Qg figure-of-merit, 100 % Rg and UIS testing, and thermal performance with RthJC = 3.0 °C/W (typical) for high-power-density board designs.
Technical Context
This MOSFET employs trench-based silicon architecture optimized for fast switching and minimal conduction loss. Its gate charge profile-Qg = 8.5 nC (VGS = 4.5 V), Qgd = 2.3 nC, and Qgs = 4.0 nC-enables efficient operation in hard-switched topologies up to several hundred kHz. The device features a body diode with trr = 22 ns (typ.) and Qrr = 13 nC (typ.), supporting synchronous rectification with low recovery loss.
Thermally, it uses a copper-exposed bottom-side drain pad in the leadless PowerPAK 1212-8 package, enabling direct thermal coupling to PCB copper. Junction-to-case resistance is rated at 3.0 °C/W (typ.), while junction-to-ambient is 26 °C/W (typ., t ≤ 10 s), making it suitable for thermally constrained surface-mount applications without external heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage; supports 48 V input bus systems with margin. |
| RDS(on) @ VGS = 10 V | 0.0089 Ω - Enables <1 W conduction loss at 30 A, critical for high-current load switches. |
| RDS(on) @ VGS = 4.5 V | 0.0124 Ω - Ensures robust on-state performance with 5 V gate drive, common in logic-level controllers. |
| Qg @ VGS = 4.5 V | 8.5 nC - Low gate charge reduces driver power and enables efficient 300–500 kHz PWM operation. |
| ID (continuous, TC = 25 °C) | 45.9 A - High current rating supports single-device solutions in 100–200 W DC/DC stages. |
| RthJC (typ.) | 3.0 °C/W - Low junction-to-case thermal resistance allows direct PCB heat spreading via exposed drain pad. |
| Body diode VSD | 0.80 V (typ., IS = 5 A) - Low forward voltage minimizes reverse-recovery losses in synchronous rectification. |
Pinout & Package
Package: PowerPAK® 1212-8 (3.3 mm × 3.3 mm, leadless, exposed copper drain pad on bottom side). Thermal and electrical performance relies on proper PCB pad layout per Vishay Application Note 826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connect to exposed bottom-side copper pad; primary thermal path to PCB. |
| 4 (top-side) | Gate (G) | Single top-side gate terminal; requires controlled trace routing to minimize ringing and EMI. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers industry-leading RDS(on) × Qg FOM for improved efficiency in high-frequency switching. |
| 100 % Rg tested | Ensures consistent gate drive requirements across production lots, simplifying driver design validation. |
| 100 % UIS tested | Guarantees ruggedness against inductive switching stress without derating, critical for motor drive and converter primary switches. |
| Optimized RDS(on) × Qoss FOM | Minimizes turn-off energy loss, directly improving light-load efficiency in resonant and soft-switching topologies. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, supporting environmentally compliant manufacturing. |
Applications
| Server VRM Output Stage | Industrial DC/DC Converter Primary Switch |
|---|---|
Use Scenario: High-current, high-efficiency buck converter supplying CPU core voltage (0.8–1.2 V) at up to 120 A. IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 300–600 kHz with 5 V gate drive. Use Value: 0.0124 Ω RDS(on) at 4.5 V enables <0.5 W conduction loss at 60 A, reducing thermal load on dense VRM layouts. |
Use Scenario: 48 V-to-12 V isolated forward or active-clamp forward converter in factory automation power supplies. IC Role / Device Role / Timing Role: Primary-side main switch handling 60 V bus transients and 10–20 A peak currents. Use Value: 60 V VDS rating with 100 % UIS testing ensures reliable operation under 48 V bus surge conditions and transformer leakage spikes. |
| BLDC Motor Gate Driver Stage | Hot-Swap Load Switch |
Use Scenario: 24 V three-phase BLDC inverter driving 500 W fans or pumps with space-constrained PCBs. IC Role / Device Role / Timing Role: Half-bridge low-side switch with fast 4 ns rise/fall times and low Qgd/Qgs ratio. Use Value: 2.3 nC Qgd limits Miller-induced shoot-through risk, enabling robust 20 kHz PWM commutation without complex gate control. |
Use Scenario: Inrush-limited 12 V/24 V hot-swap module protecting backplane power distribution in telecom equipment. IC Role / Device Role / Timing Role: Single-pole load switch controlling power delivery with integrated overcurrent protection. Use Value: 45.9 A continuous rating and 100 A pulsed capability support high-current hot-plug events while maintaining <10 mΩ on-resistance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.0095 Ω @ 10 V; Qg = 12.5 nC @ 4.5 V; SO-8 package; higher RthJA (62 °C/W). | Less suitable for high-density layouts due to larger SO-8 footprint and inferior thermal performance. | Choose IRF7470PBF only if SO-8 compatibility is required and thermal headroom exceeds 25 °C/W. |
| DMTH6009LPSQ-13 | RDS(on) = 0.0092 Ω @ 10 V; Qg = 10.5 nC @ 4.5 V; PowerDI 5060 package; no exposed drain pad. | Lacks bottom-side thermal path; unsuitable for >25 W continuous dissipation without heatsink. | Select DMTH6009LPSQ-13 when board area is less constrained but bottom-side thermal relief is unavailable. |
Compared with IRF7470PBF and DMTH6009LPSQ-13, the SIS4604LDN-T1-GE3 offers superior thermal performance via its PowerPAK 1212-8 exposed drain, lower Qg, and tighter RDS(on) spec-making it optimal for compact, high-efficiency, high-current applications where PCB copper acts as the primary heatsink.
Availability
SIS4604LDN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, BLDC motor drives, and hot-swap load switches requiring stable component supply and long-term manufacturability.
Supply support for SIS4604LDN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, reliability, and miniaturization.
The SIS4604LDN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-current switching in space-constrained power conversion systems.
FAQ
What is the maximum continuous drain current for SIS4604LDN-T1-GE3 at 70 °C case temperature?
The SIS4604LDN-T1-GE3 supports 36.7 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8 package under sustained power dissipation; actual usable current depends on PCB copper area and airflow. The SIS4604LDN-T1-GE3 datasheet confirms this value under steady-state conditions with proper thermal design.
Does SIS4604LDN-T1-GE3 have avalanche capability, and what is its rated single-pulse energy?
Yes, the SIS4604LDN-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for 20 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH. This capability ensures robustness during transient overloads in motor drive or converter primary switch applications. The SIS4604LDN-T1-GE3 specification sheet explicitly lists IAS = 20 A and EAS = 20 mJ under absolute maximum ratings.
What is the gate threshold voltage range for SIS4604LDN-T1-GE3, and how does it vary with temperature?
The SIS4604LDN-T1-GE3 has a gate-source threshold voltage (VGS(th)) range of 1.0 V to 3.0 V at TJ = 25 °C, with a negative temperature coefficient of −5.1 mV/°C. This means VGS(th) decreases as junction temperature rises, improving turn-on behavior under thermal stress. The SIS4604LDN-T1-GE3 datasheet specifies this parameter under "Specifications" with test condition VDS = VGS, ID = 250 μA.
Can SIS4604LDN-T1-GE3 be used with 3.3 V gate drive, and what is its RDS(on) at that voltage?
No, the SIS4604LDN-T1-GE3 is not characterized for guaranteed operation at 3.3 V gate drive. Its RDS(on) is only specified at VGS = 4.5 V (0.0124 Ω max) and VGS = 10 V (0.0089 Ω max). At 3.3 V, the device may remain partially enhanced, resulting in unpredictable and elevated on-resistance. The SIS4604LDN-T1-GE3 product summary and specifications do not provide data for VGS = 3.3 V.
What is the recommended soldering profile for SIS4604LDN-T1-GE3, and why is manual rework discouraged?
The SIS4604LDN-T1-GE3 requires peak reflow temperature of 260 °C per JEDEC J-STD-020, with profile details in Vishay document 73257. Manual soldering with an iron is discouraged because the PowerPAK 1212-8 is leadless and relies on precise bottom-side solder joint formation; uneven heating risks voiding or insufficient wetting of the exposed copper drain pad. The SIS4604LDN-T1-GE3 datasheet explicitly states this limitation in Note "e".
SIS4604LDN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.1A (Ta), 45.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1180 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 33.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS4604LDN-T1-GE3 FAQ
1.How can I place an order for SIS4604LDN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS4604LDN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS4604LDN-T1-GE3 reliable?
The price and inventory of SIS4604LDN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS4604LDN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS4604LDN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS4604LDN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS4604LDN-T1-GE3?
SIS4604LDN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS4604LDN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS4604LDN-T1-GE3?
For technical support, including SIS4604LDN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS4604LDN-T1-GE3 requirements.
6.How does Aetrix verify that SIS4604LDN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS4604LDN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS4604LDN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS4604LDN-T1-GE3?
All SIS4604LDN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS4604LDN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS4604LDN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS4604LDN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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