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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS488DN-T1-GE3

Name: SIS488DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS488DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS488DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS488DN-T1-GE3.pdf

Description:: MOSFET N-CH 40V 40A PPAK1212-8

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Product details

Overview

SIS488DN-T1-GE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® Power MOSFET in a PowerPAK® 1212-8 package, rated for 40 A continuous drain current at T_C = 25 °C, with R_DS(on) = 5.5 mΩ at V_GS = 10 V and 7.5 mΩ at V_GS = 4.5 V, used in synchronous rectification and high-efficiency DC-DC converters.

For engineers reviewing the SIS488DN-T1-GE3 datasheet, SIS488DN-T1-GE3 pinout, SIS488DN-T1-GE3 application, or SIS488DN-T1-GE3 equivalent, key selection criteria include its 40 V V_DS, low gate charge (9.8 nC at 4.5 V), capability for 5 V gate drive, thermal performance (R_thJC = 2.4 °C/W), and suitability for space-constrained power stages requiring high current density.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) and fast switching, supporting operation with standard 5 V logic-level gate drivers. Its design integrates robust avalanche capability (E_AS = 20 mJ) and 100 % R_g and UIS testing per production lot.

The PowerPAK 1212-8 package features an exposed copper drain pad on the bottom surface for ultra-low junction-to-case thermal resistance (2.4 °C/W max), enabling efficient heat transfer to the PCB without external heatsinks in many applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; defines safe operating range in buck converter high-side or synchronous rectifier positions.
R_DS(on) @ 10 V	5.5 mΩ max - Enables <1 W conduction loss at 40 A, critical for high-current power stages.
R_DS(on) @ 4.5 V	7.5 mΩ max - Ensures reliable turn-on with 5 V microcontroller or PWM controller outputs.
Q_g @ 4.5 V	9.8 nC typ - Low gate charge reduces driver power demand and switching losses in high-frequency (>500 kHz) converters.
I_D (continuous)	40 A @ T_C = 25 °C - High current rating supports compact single-MOSFET solutions in 20–30 A load applications.
R_thJC	2.4 °C/W max - Enables direct PCB thermal coupling; allows >30 W dissipation with modest copper area before exceeding 150 °C junction limit.
V_GS(th)	1.1–2.2 V - Low threshold ensures early turn-on and stable enhancement-mode behavior across temperature.

Pinout & Package

PowerPAK® 1212-8 is a leadless, surface-mount package with an exposed drain pad on the bottom and eight terminals arranged in a 3.30 mm × 3.30 mm footprint. The package uses copper clip construction for low inductance and high thermal conductivity.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (bottom drain pad)	Drain (D)	Monolithic copper drain land - primary thermal path and high-current output node; requires full-solder coverage for optimal R_thJA.
1 (top side)	Source (S)	Top-side source connection - used for Kelvin sensing or low-inductance gate loop routing in high-dI/dt designs.
3 (top side)	Gate (G)	Control input - low R_g (0.2–1.5 Ω) minimizes gate oscillation; layout must minimize loop inductance for clean switching.
2, 4, 5, 6, 7, 8 (top side)	Source (S)	Multiple top-side source terminals - reduce source inductance and improve current sharing in parallel configurations.

Key Features

Feature	Design Value
TrenchFET® technology	Enables 5.5 mΩ R_DS(on) at 40 V in a 3.3 mm × 3.3 mm footprint - delivers higher current density than SO-8 or TSSOP-8 alternatives.
100 % R_g and UIS tested	Ensures gate robustness and unclamped inductive switching reliability - critical for motor drive and buck converter freewheeling paths.
5 V gate drive compatibility	Operates fully enhanced with standard 5 V logic - eliminates need for level-shifting or dedicated gate drivers in many embedded power supplies.
Exposed drain pad (PowerPAK 1212-8)	Provides 2.4 °C/W R_thJC - enables >3× better thermal performance than TSSOP-8 and simplifies thermal management in dense layouts.
Lead (Pb)-free and Halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709C - compliant for industrial, computing, and consumer end equipment.

Applications

Synchronous Buck Converter	Synchronous Rectification
Use Scenario: Primary high-side switch in 12 V input → 1.2 V/30 A CPU core supply. IC Role / Device Role / Timing Role: High-side power switch controlling duty cycle and energy transfer; operates at 600 kHz with 5 V gate drive from controller. Use Value: 7.5 mΩ R_DS(on) at 4.5 V enables >94 % efficiency at full load; low Q_g minimizes driver losses and EMI.	Use Scenario: Secondary-side switch replacing Schottky diode in isolated 48 V → 12 V telecom DC-DC module. IC Role / Device Role / Timing Role: Synchronous rectifier controlled by transformer auxiliary winding or dedicated driver; conducts during low-side conduction phase. Use Value: 5.5 mΩ R_DS(on) cuts conduction loss by >60 % vs. 40 V Schottky; body diode t_rr = 31 ns supports clean commutation.
ORing Application	Motor Drive Switch
Use Scenario: Redundant 12 V power rail ORing in network switch backplane with hot-swap capability. IC Role / Device Role / Timing Role: Low-loss forward path switch; reverse-biased during fault to block backfeed; controlled via gate monitoring circuit. Use Value: 40 V rating accommodates input transients; low R_DS(on) limits voltage drop to <200 mV at 20 A, preserving system margin.	Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver stage driving 5 A phase current. IC Role / Device Role / Timing Role: High-side power switch in three-phase inverter leg; switched at ≤20 kHz with bootstrap gate drive. Use Value: 20 mJ E_AS withstands inductive kickback during PWM dead-time; 100 % UIS tested ensures field reliability.

Synchronous Buck Converter

Synchronous Rectification

Use Scenario: Primary high-side switch in 12 V input → 1.2 V/30 A CPU core supply.

IC Role / Device Role / Timing Role: High-side power switch controlling duty cycle and energy transfer; operates at 600 kHz with 5 V gate drive from controller.

Use Value: 7.5 mΩ R_DS(on) at 4.5 V enables >94 % efficiency at full load; low Q_g minimizes driver losses and EMI.

Use Scenario: Secondary-side switch replacing Schottky diode in isolated 48 V → 12 V telecom DC-DC module.

IC Role / Device Role / Timing Role: Synchronous rectifier controlled by transformer auxiliary winding or dedicated driver; conducts during low-side conduction phase.

Use Value: 5.5 mΩ R_DS(on) cuts conduction loss by >60 % vs. 40 V Schottky; body diode t_rr = 31 ns supports clean commutation.

ORing Application

Motor Drive Switch

Use Scenario: Redundant 12 V power rail ORing in network switch backplane with hot-swap capability.

IC Role / Device Role / Timing Role: Low-loss forward path switch; reverse-biased during fault to block backfeed; controlled via gate monitoring circuit.

Use Value: 40 V rating accommodates input transients; low R_DS(on) limits voltage drop to <200 mV at 20 A, preserving system margin.

Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver stage driving 5 A phase current.

IC Role / Device Role / Timing Role: High-side power switch in three-phase inverter leg; switched at ≤20 kHz with bootstrap gate drive.

Use Value: 20 mJ E_AS withstands inductive kickback during PWM dead-time; 100 % UIS tested ensures field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR488DP-T1-GE3	Same die, PowerPAK® 1212-8 dual configuration - two independent 40 V MOSFETs in one package.	Used where space-constrained dual-switch topologies (e.g., half-bridge, dual-phase) are required instead of discrete singles.	Select SiR488DP-T1-GE3 only when dual-device integration reduces board area and interconnect inverter or multiphase designs.
IRLML6344TRPBF	30 V rating, 27 mΩ R_DS(on) @ 4.5 V, SOT-23 package - lower voltage, higher on-resistance, smaller footprint.	Suitable for ≤10 A loads in portable electronics; not rated for 40 V bus or >15 A continuous current.	Choose IRLML6344TRPBF only for low-power, cost-sensitive applications below 30 V and 10 A; not a functional replacement for SIS488DN-T1-GE3.

Compared with SiR488DP-T1-GE3, SIS488DN-T1-GE3 offers single-device simplicity and lower gate drive complexity; compared with IRLML6344TRPBF, it provides 33 % higher voltage rating and 73 % lower R_DS(on), enabling higher power density and efficiency in industrial and computing power supplies.

Availability

SIS488DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous buck converters, ORing circuits, and motor drive switches requiring stable component supply, high current density, and RoHS-compliant packaging.

Supply support for SIS488DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SIS488DN-T1-GE3 belongs to Vishay's TrenchFET® Power MOSFET product line, engineered for high-efficiency DC-DC conversion, synchronous rectification, and load switching in space-constrained industrial and computing systems.

FAQ

What is the maximum continuous drain current rating for SIS488DN-T1-GE3?

The SIS488DN-T1-GE3 is rated for 40 A continuous drain current at case temperature T_C = 25 °C, and 15.5 A at T_C = 70 °C. This rating is package-limited and assumes proper PCB copper area for thermal dissipation. At ambient temperature T_A = 25 °C with standard FR4, the derated current is 19.3 A (pulsed) and 15.5 A (continuous), per the absolute maximum ratings table in the official Vishay datasheet (Doc #62882).

Does SIS488DN-T1-GE3 support 5 V gate drive?

Yes, SIS488DN-T1-GE3 is explicitly characterized for 5 V gate drive operation, with R_DS(on) = 7.5 mΩ max at V_GS = 4.5 V and ID = 10 A. Its gate threshold voltage (V_GS(th)) ranges from 1.1 V to 2.2 V, ensuring full enhancement with standard 5 V logic-level controllers without requiring gate boosting or level shifting.

What is the thermal resistance from junction to case for SIS488DN-T1-GE3?

The maximum junction-to-case (drain) thermal resistance R_thJC for SIS488DN-T1-GE3 is 2.4 °C/W under steady-state conditions, as specified in the Vishay datasheet (Doc #62882). This low value is enabled by the exposed copper drain pad in the PowerPAK 1212-8 package and requires full-solder coverage of the bottom pad for optimal thermal performance.

Is SIS488DN-T1-GE3 suitable for synchronous rectification in isolated DC-DC converters?

Yes, SIS488DN-T1-GE3 is specifically recommended for synchronous rectification applications, as confirmed in its official Vishay documentation. Its low R_DS(on), fast body diode (t_rr = 31 ns typ), and 40 V V_DS rating make it well-suited for secondary-side switching in 12 V and 24 V isolated outputs, delivering higher efficiency than Schottky diodes while maintaining robustness against voltage overshoot.

What package type does SIS488DN-T1-GE3 use, and what are its key mechanical dimensions?

SIS488DN-T1-GE3 uses the PowerPAK® 1212-8 package - a leadless, surface-mount package with a 3.30 mm × 3.30 mm footprint and 1.04 mm nominal height. Key dimensions include D/E = 3.20–3.40 mm, D1/E1 = 2.95–3.15 mm, and an exposed drain pad occupying pins 1–8 on the bottom side, per Vishay package drawing Doc #71656.

SIS488DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1330 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS488DN-T1-GE3 FAQ

1.How can I place an order for SIS488DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS488DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS488DN-T1-GE3 reliable?

The price and inventory of SIS488DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS488DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS488DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS488DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS488DN-T1-GE3?

SIS488DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS488DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS488DN-T1-GE3?

For technical support, including SIS488DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS488DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS488DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS488DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS488DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS488DN-T1-GE3?

All SIS488DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS488DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS488DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS488DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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