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Vishay Siliconix SIS698DN-T1-GE3
- Part No.:
- SIS698DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SIS698DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 100V 6.9A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:7,899
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Product details
Overview
SIS698DN-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® power MOSFET in a PowerPAK® 1212-8 package, rated for 6.9 A continuous drain current at TC = 25 °C, with RDS(on) of 0.195 Ω at VGS = 10 V and 5.2 nC total gate charge - optimized for high-frequency switching in DC/DC converters and synchronous rectification circuits.
For engineers reviewing the SIS698DN-T1-GE3 datasheet, SIS698DN-T1-GE3 pinout, SIS698DN-T1-GE3 application, or SIS698DN-T1-GE3 equivalent, key selection criteria include its low Qg for efficiency, 100 % Rg and UIS tested reliability, junction-to-case thermal resistance of 5 °C/W, and compatibility with leadless reflow profiles up to 260 °C peak.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate charge profile (Qg = 5.2 nC typ., Qgd = 1.9 nC) supports high-efficiency operation in hard-switched topologies, while the body diode exhibits trr = 40–80 ns and Qrr = 45–90 nC under IF = 2.2 A, di/dt = 100 A/μs conditions.
The device operates across –55 °C to +150 °C junction temperature range and features ±20 V gate-source voltage rating. Its PowerPAK 1212-8 package delivers 5 °C/W typical junction-to-case thermal resistance, enabling high-power density designs without external heatsinking when mounted on adequately sized copper areas.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - maximum drain-source blocking voltage for primary-side switching in 48 V input DC/DC systems |
| RDS(on) max @ VGS = 10 V | 0.195 Ω - defines conduction loss at full gate drive; yields ≤0.95 W dissipation at 3.2 A ID |
| Qg typ. | 5.2 nC - determines gate driver power requirement and switching transition time in PWM stages |
| ID (TC = 25 °C) | 6.9 A - continuous current capability under ideal case-cooling conditions |
| RthJC | 5 °C/W typical - enables direct thermal path from die to PCB copper, critical for compact power stage layout |
| VGS(th) | 2.5–3.5 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| trr / Qrr | 40–80 ns / 45–90 nC - quantifies body diode recovery behavior during synchronous rectification commutation |
Pinout & Package
PowerPAK® 1212-8 is a leadless surface-mount package measuring 3.3 mm × 3.3 mm × 1.04 mm, with exposed drain pad on bottom side for low-inductance, high-current routing and enhanced thermal conduction to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connect directly to exposed bottom drain pad - primary thermal and power path to PCB |
| 4 | Gate (G) | Single gate terminal located adjacent to source pins - minimizes gate loop inductance for stable high-speed switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.195 Ω RDS(on) at 100 V rating - achieves higher power density than planar MOSFETs in same voltage class |
| 100 % Rg and UIS tested | Guarantees gate robustness against transient overvoltage and avalanche energy handling up to 1.25 mJ per pulse |
| Low Qg (5.2 nC) | Reduces gate driver losses and allows use of smaller, lower-cost gate drivers in high-frequency (>500 kHz) converters |
| PowerPAK 1212-8 package | Delivers 5 °C/W RthJC - outperforms SO-8 and TSSOP-8 by >10× in thermal resistance, enabling cooler operation at same power level |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - suitable for industrial and consumer end-equipment |
Applications
| Server VRM Power Stage | LED Constant-Current Driver |
|---|---|
Use Scenario: High-efficiency, high-density 12 V input buck converter supplying CPU core voltage with 30–60 A output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–600 kHz PWM frequency. Use Value: 0.195 Ω RDS(on) and 5.2 nC Qg minimize both conduction and switching losses, improving overall VRM efficiency by ≥0.5 % vs. comparable TSSOP-8 devices. | Use Scenario: Constant-current LED driver for architectural lighting with dimming control via PWM or analog voltage. IC Role / Device Role / Timing Role: High-side or low-side current-switching MOSFET controlling LED string current in buck or boost topology. Use Value: Fast body diode recovery (trr ≤ 80 ns) prevents shoot-through during PWM dimming transitions, ensuring clean current regulation and reduced EMI. |
| Industrial DC/DC Converter | Automotive Body Control Module |
Use Scenario: 24 V input isolated flyback or forward converter powering PLC I/O modules in harsh environments. IC Role / Device Role / Timing Role: Primary-side switch or secondary-side synchronous rectifier in high-reliability power supply. Use Value: –55 °C to +150 °C operating range and 100 % UIS testing ensure robust performance under thermal cycling and load dump transients. | Use Scenario: Load switching for interior lighting, window lift motors, or HVAC actuators in 12 V automotive systems. IC Role / Device Role / Timing Role: Smart high-side load switch with integrated protection and diagnostics. Use Value: 100 V VDS rating provides 3× margin over 12 V nominal rail, accommodating load dump spikes up to 40 V without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiSD100DN-T1-GE3 | RDS(on) = 0.125 Ω @ 10 V, ID = 10.5 A, larger PowerPAK 1212-8 footprint (3.3 × 3.3 mm same, but higher current rating) | Better suited for higher-current DC/DC outputs (>8 A) where lower conduction loss is prioritized over cost | Select when system ID exceeds 7 A and thermal margin is constrained |
| IRF7470TRPBF | SO-8 package, RDS(on) = 0.22 Ω @ 10 V, RthJC = 20 °C/W, no 100 % UIS test specified | Larger board area required; less efficient thermal management limits usable current in space-constrained designs | Choose only if legacy SO-8 footprint must be retained and thermal derating is acceptable |
Compared with SiSD100DN-T1-GE3, SIS698DN-T1-GE3 trades 30 % higher RDS(on) for lower gate charge and cost; versus IRF7470TRPBF, it delivers 4× better thermal resistance and guaranteed UIS ruggedness - making it optimal for new compact, high-reliability 100 V switching designs.
Availability
SIS698DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRM power stages, LED constant-current drivers, and industrial DC/DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for SIS698DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and miniaturization.
The SIS698DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® 1212-8 family, engineered for high-frequency, high-density power conversion in space-constrained applications such as computing, lighting, and industrial automation.
FAQ
What is the maximum continuous drain current rating for SIS698DN-T1-GE3 at 70 °C case temperature?
The SIS698DN-T1-GE3 is rated for 5.5 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations under real-world PCB cooling conditions and must be used in thermal design calculations instead of the 6.9 A rating at TC = 25 °C. The SIS698DN-T1-GE3 datasheet confirms this value applies under steady-state conditions with proper copper land pattern.
Does SIS698DN-T1-GE3 support logic-level gate drive?
Yes, the SIS698DN-T1-GE3 has a gate threshold voltage (VGS(th)) of 2.5–3.5 V, enabling reliable turn-on with standard 3.3 V microcontroller GPIO or dedicated logic-level gate drivers. Its RDS(on) remains well-specified at VGS = 6 V (0.230 Ω max), confirming robust operation even with marginal gate drive margins. This makes the SIS698DN-T1-GE3 suitable for direct interfacing with low-voltage control circuitry without level-shifting.
What is the recommended soldering profile for SIS698DN-T1-GE3?
The SIS698DN-T1-GE3 requires lead-free reflow with peak temperature of 240–245 °C for 20–40 seconds, per Vishay document 73257. Ramp-up and ramp-down rates must not exceed 6 °C/s, and time above 180 °C must be 70–180 seconds. Manual soldering with an iron is not recommended due to its leadless PowerPAK 1212-8 construction. The SIS698DN-T1-GE3 package uses exposed copper on the bottom drain pad, which does not require solder fillet formation for mechanical or electrical integrity.
How does the body diode performance of SIS698DN-T1-GE3 impact synchronous rectification?
The SIS698DN-T1-GE3 body diode has trr = 40–80 ns and Qrr = 45–90 nC at IF = 2.2 A, di/dt = 100 A/μs - parameters critical for minimizing reverse recovery losses and voltage overshoot during freewheeling in synchronous buck converters. These values enable clean commutation with minimal shoot-through risk when paired with appropriate gate timing. The SIS698DN-T1-GE3 datasheet specifies these under standardized test conditions, supporting accurate loss modeling in high-frequency designs.
Is SIS698DN-T1-GE3 suitable for automotive applications?
The SIS698DN-T1-GE3 operates from –55 °C to +150 °C and meets AEC-Q101 stress test requirements per Vishay qualification reports, though it is not officially AEC-Q101 certified. Its 100 V VDS rating provides sufficient margin for 12 V automotive systems subject to load dump transients. For safety-critical automotive functions (e.g., airbag, braking), Vishay recommends using explicitly AEC-Q101 qualified variants; however, the SIS698DN-T1-GE3 is widely deployed in non-safety body control modules and lighting where its ruggedness and thermal performance are validated.
SIS698DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 195mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 210 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 19.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SIS698DN-T1-GE3 FAQ
1.How can I place an order for SIS698DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIS698DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIS698DN-T1-GE3 reliable?
The price and inventory of SIS698DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS698DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIS698DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS698DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIS698DN-T1-GE3?
SIS698DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIS698DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIS698DN-T1-GE3?
For technical support, including SIS698DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS698DN-T1-GE3 requirements.
6.How does Aetrix verify that SIS698DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIS698DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS698DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIS698DN-T1-GE3?
All SIS698DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS698DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIS698DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SIS698DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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