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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIS778DN-T1-GE3

Name: SIS778DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS778DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIS778DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SIS778DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 35A PPAK1212-8

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Product details

Overview

SIS778DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) trench MOSFET with integrated Schottky diode in a PowerPAK® 1212-8 package, delivering R_DS(on) = 5.0 mΩ at V_GS = 10 V and 6.2 mΩ at V_GS = 4.5 V, rated for 35 A continuous drain current at T_C = 25 °C, and used in low-side switching for notebook PC system and memory power rails.

For engineers reviewing the SIS778DN-T1-GE3 datasheet, SIS778DN-T1-GE3 pinout, SIS778DN-T1-GE3 application, or SIS778DN-T1-GE3 equivalent, key selection criteria include its monolithic SkyFET architecture, 1.07 mm profile, 100 % R_g and UIS tested reliability, and thermal resistance of R_thJC = 1.9 °C/W (typical) enabling high-current density DC-DC output stages.

Technical Context

This device integrates a trench-based N-channel MOSFET and a Schottky diode on a single die within the PowerPAK 1212-8 leadless package, supporting synchronous rectification and body-diode conduction with t_rr = 19–38 ns and Q_rr = 8–16 nC. Its gate threshold voltage V_GS(th) ranges from 1.0 V to 2.2 V, enabling compatibility with 3.3 V and 4.5 V logic-level drive.

The MOSFET features C_iss = 1390 pF, C_oss = 335 pF, and Crss = 145 pF at V_DS = 15 V, with total gate charge Q_g = 13.3 nC (V_GS = 4.5 V) and 27.5 nC (V_GS = 10 V), optimized for fast switching in high-frequency buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 5 V input rail applications
R_DS(on) @ V_GS = 10 V	5.0 mΩ max - Enables ≤ 500 mW conduction loss at 10 A, critical for efficiency in compact notebook VRMs
R_DS(on) @ V_GS = 4.5 V	6.2 mΩ max - Supports direct drive from 4.5 V gate drivers without level-shifting
I_D (continuous, T_C = 25 °C)	35 A - High current capability enabled by low R_thJC = 1.9 °C/W and exposed drain pad
Q_g @ V_GS = 4.5 V	13.3 nC typ - Reduces gate drive power and switching losses in 300–1000 kHz DC-DC stages
V_SD @ I_S = 2 A	0.5–0.7 V - Low forward voltage Schottky diode minimizes reverse recovery loss during dead-time conduction
t_rr	19–38 ns - Fast body diode recovery supports high-frequency synchronous operation without shoot-through risk

Pinout & Package

PowerPAK® 1212-8 is a leadless surface-mount package with 3.30 mm × 3.30 mm footprint and 1.07 mm maximum height, featuring an exposed copper drain pad on the bottom side for low thermal resistance and high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-dI/dt switching
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect to the exposed bottom pad, providing primary thermal and current path to PCB
4	Gate (G)	Single gate terminal located adjacent to source pins for minimized gate loop inductance and stable turn-on/turn-off

Key Features

Feature	Design Value
SkyFET Monolithic Integration	Co-located trench MOSFET + Schottky diode eliminates external diode placement and layout mismatch in synchronous buck outputs
100 % R_g and UIS Tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress
PowerPAK 1212-8 Package	Delivers R_thJC = 1.9 °C/W (typ), outperforming SO-8 and TSSOP-8 by >10× in thermal resistance for same footprint area
Halogen-free & RoHS Compliant	Fulfills IEC 61249-2-21 and Directive 2002/95/EC requirements for environmentally constrained notebook platforms
Low Profile (1.07 mm)	Enables ultra-thin notebook designs where component height is limited to <1.2 mm above PCB

Applications

Notebook System Power	Notebook Memory Power
Use Scenario: Primary 5 V or 3.3 V system rail in ultraportable notebooks requiring high-efficiency, space-constrained DC-DC conversion. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter delivering up to 35 A per phase. Use Value: 5.0 mΩ R_DS(on) reduces conduction loss by >30 % vs. comparable TSSOP-8 MOSFETs, extending battery runtime.	Use Scenario: DDR memory VDDQ or VTT termination supply in dual-channel memory subsystems. IC Role / Device Role / Timing Role: Low-side switch in point-of-load regulator with fast transient response and minimal output impedance. Use Value: 13.3 nC Q_g at 4.5 V enables clean switching at ≥500 kHz, reducing output filter size and improving load-step regulation.
High-Density VRM Output Stage	Thin-Film Power Module Core
Use Scenario: Output stage in embedded VRM modules for CPU/GPU core voltage regulation in fanless notebooks. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch paired with companion high-side MOSFET in compact 1212 footprint. Use Value: Exposed drain pad allows direct thermal coupling to internal ground plane, maintaining T_J < 105 °C at full 35 A load.	Use Scenario: Integrated power stage in thin-film module assemblies where vertical stacking height must be <1.1 mm. IC Role / Device Role / Timing Role: Monolithic MOSFET+Schottky die serving as both main switch and freewheeling element in half-bridge topology. Use Value: 19 ns t_rr enables dead-time reduction to <20 ns, minimizing voltage overshoot and improving light-load efficiency.

Notebook System Power

Notebook Memory Power

Use Scenario: Primary 5 V or 3.3 V system rail in ultraportable notebooks requiring high-efficiency, space-constrained DC-DC conversion.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter delivering up to 35 A per phase.

Use Value: 5.0 mΩ R_DS(on) reduces conduction loss by >30 % vs. comparable TSSOP-8 MOSFETs, extending battery runtime.

Use Scenario: DDR memory VDDQ or VTT termination supply in dual-channel memory subsystems.

IC Role / Device Role / Timing Role: Low-side switch in point-of-load regulator with fast transient response and minimal output impedance.

Use Value: 13.3 nC Q_g at 4.5 V enables clean switching at ≥500 kHz, reducing output filter size and improving load-step regulation.

High-Density VRM Output Stage

Thin-Film Power Module Core

Use Scenario: Output stage in embedded VRM modules for CPU/GPU core voltage regulation in fanless notebooks.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch paired with companion high-side MOSFET in compact 1212 footprint.

Use Value: Exposed drain pad allows direct thermal coupling to internal ground plane, maintaining T_J < 105 °C at full 35 A load.

Use Scenario: Integrated power stage in thin-film module assemblies where vertical stacking height must be <1.1 mm.

IC Role / Device Role / Timing Role: Monolithic MOSFET+Schottky die serving as both main switch and freewheeling element in half-bridge topology.

Use Value: 19 ns t_rr enables dead-time reduction to <20 ns, minimizing voltage overshoot and improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET with Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	30 V, R_DS(on) = 3.8 mΩ @ 10 V, PowerPAK 1212-8, but no integrated Schottky diode	Requires external Schottky for freewheeling; higher board area and BOM count	Select when lower R_DS(on) is prioritized over integration and layout simplicity
SiZ730DT-T1-GE3	30 V, R_DS(on) = 5.2 mΩ @ 10 V, PowerPAK 1212-8, integrated Schottky, but Q_g = 15.2 nC @ 4.5 V	Higher gate charge increases driver loss and limits max switching frequency	Select when tighter V_GS(th) tolerance (1.2–2.0 V) is required for precise gate control

Compared with SiR872DP-T1-GE3 and SiZ730DT-T1-GE3, the SIS778DN-T1-GE3 uniquely balances low R_DS(on), integrated Schottky, and moderate Q_g, making it optimal for space- and efficiency-critical notebook low-side applications where monolithic integration reduces layout risk and improves thermal margin.

Availability

SIS778DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC system power, memory VRMs, and high-density VRM output stages requiring stable component supply, consistent lead-free/halogen-free compliance, and verified thermal performance in production volumes.

Supply support for SIS778DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal reliability, and miniaturization.

The SIS778DN-T1-GE3 belongs to Vishay's SkyFET PowerPAK family, engineered specifically for high-current, low-voltage DC-DC conversion in portable computing and thin-profile power systems.

FAQ

What is the maximum continuous drain current rating for SIS778DN-T1-GE3 at case temperature of 70 °C?

The SIS778DN-T1-GE3 is rated for 35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is sustained due to its low R_thJC = 1.9 °C/W (typical) and exposed drain pad design, which efficiently transfers heat to the PCB. The SIS778DN-T1-GE3 maintains this current capability without derating until T_C exceeds 70 °C, where thermal limiting begins per the current derating curve.

Does SIS778DN-T1-GE3 include a built-in Schottky diode, and what is its forward voltage?

Yes, the SIS778DN-T1-GE3 integrates a monolithic Schottky diode co-located with the MOSFET die. Its body diode forward voltage V_SD is 0.5–0.7 V at I_S = 2 A and T_J = 25 °C, as confirmed in the Drain-Source Body Diode Characteristics section. This low V_SD reduces conduction loss during freewheeling in synchronous buck topologies, and the SIS778DN-T1-GE3 leverages this feature for improved light-load efficiency without external diode components.

What is the gate threshold voltage range for SIS778DN-T1-GE3, and how does it affect drive compatibility?

The gate threshold voltage V_GS(th) for SIS778DN-T1-GE3 is 1.0 V minimum to 2.2 V maximum at I_D = 250 µA, enabling reliable turn-on with standard 3.3 V and 4.5 V logic-level gate drivers. This range ensures the SIS778DN-T1-GE3 remains fully enhanced across process and temperature variation, and the SIS778DN-T1-GE3 achieves R_DS(on) = 6.2 mΩ max at V_GS = 4.5 V-critical for direct-drive applications without gate boosting.

Is SIS778DN-T1-GE3 compatible with lead-free reflow soldering, and what is the peak temperature limit?

Yes, the SIS778DN-T1-GE3 is qualified for lead-free reflow soldering with a maximum peak temperature of 240 °C for 20–40 seconds, per Vishay document 73257. It meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and is rated for 260 °C peak per IPC/JEDEC standards. The SIS778DN-T1-GE3's PowerPAK 1212-8 package is designed for robust thermal cycling performance under these conditions, with no manual soldering recommended.

How does the PowerPAK 1212-8 package of SIS778DN-T1-GE3 improve thermal performance compared to SO-8?

The PowerPAK 1212-8 package of SIS778DN-T1-GE3 delivers R_thJC = 1.9 °C/W (typical), over 10× better than standard SO-8 (≈20 °C/W), due to its exposed copper drain pad and reduced interfacial layers. In a 4-layer FR-4 board test, the SIS778DN-T1-GE3 shows only a 4.8 °C junction-to-board rise at 2 W dissipation, versus >40 °C for SO-8-directly preserving R_DS(on) stability and enabling higher current density. This thermal advantage is intrinsic to the SIS778DN-T1-GE3 package construction and validated in Vishay AN822.

SIS778DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1390 pF @ 15 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 52W (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SIS778DN-T1-GE3 FAQ

1.How can I place an order for SIS778DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIS778DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIS778DN-T1-GE3 reliable?

The price and inventory of SIS778DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIS778DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIS778DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIS778DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIS778DN-T1-GE3?

SIS778DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIS778DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIS778DN-T1-GE3?

For technical support, including SIS778DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIS778DN-T1-GE3 requirements.

6.How does Aetrix verify that SIS778DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIS778DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIS778DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIS778DN-T1-GE3?

All SIS778DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIS778DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIS778DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SIS778DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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