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Vishay Siliconix SISA34DN-T1-GE3
- Part No.:
- SISA34DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SISA34DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,935
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Product details
Overview
SISA34DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8 package, delivering RDS(on) = 6.7 mΩ at VGS = 10 V and 9.8 mΩ at VGS = 4.5 V, rated for 40 A continuous drain current at TC = 25 °C, and used in high-current DC/DC power supplies and telecom POL converters.
For engineers reviewing the SISA34DN-T1-GE3 datasheet, SISA34DN-T1-GE3 pinout, SISA34DN-T1-GE3 application, or SISA34DN-T1-GE3 equivalent, key selection criteria include its ultra-low RDS(on) at 4.5 V gate drive, 8 nC typical gate charge at 4.5 V, 100% UIS tested robustness, junction-to-case thermal resistance of 4.8 °C/W, and suitability for space-constrained computing and telecom power rails.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology optimized for low conduction loss and fast switching in synchronous buck and load-switch applications. Its gate threshold voltage (1.1–2.4 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its 16.7 nC total gate charge at 10 V supports efficient PWM control at frequencies up to several hundred kHz.
The PowerPAK 1212-8 package features an exposed copper drain pad on the bottom side for direct thermal coupling to PCB copper, achieving a steady-state junction-to-case (drain) thermal resistance of 4.8 °C/W and enabling high-power density without external heatsinks in properly designed layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 24 V input systems with margin. |
| RDS(on) @ VGS = 10 V | 6.7 mΩ max - Enables <1 W conduction loss at 40 A, critical for high-efficiency 12 V/48 V intermediate bus converters. |
| RDS(on) @ VGS = 4.5 V | 9.8 mΩ max - Ensures low-loss operation with standard 5 V gate drivers in point-of-load regulators. |
| ID (continuous, TC = 25 °C) | 40 A - Supports high-current output stages in server VRMs and telecom bricks without derating. |
| Qg @ VGS = 4.5 V | 8 nC typ - Reduces gate drive power and switching losses in high-frequency (>500 kHz) synchronous rectifiers. |
| RthJC (Drain) | 4.8 °C/W max - Allows >15 W power dissipation with minimal temperature rise when mounted on ≥0.3 in² copper area. |
| Body diode VSD | 0.77 V typ at 5 A - Low forward drop minimizes reverse-recovery losses during dead-time conduction in synchronous buck topologies. |
Pinout & Package
Package: PowerPAK® 1212-8 (3.3 mm × 3.3 mm × 1.05 mm), leadless, with exposed drain pad on bottom side. Designed for surface-mount reflow per JEDEC J-STD-020, peak temperature 260 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals - reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to bottom-side exposed copper pad - primary thermal and current path to PCB. |
| 4 | Gate (G) | Single gate terminal located adjacent to source pins - enables short, low-inductance gate loop layout for stable high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 25% lower RDS(on) vs. prior generation at same die size, enabling higher current density in compact footprint. |
| 100% Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress. |
| PowerPAK 1212-8 package | Provides 20× better thermal performance than TSSOP-8 and 40% smaller footprint than SO-8, ideal for dense server and telecom PCBs. |
| Lead (Pb)-free and Halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, supporting environmentally compliant manufacturing. |
Applications
| Server VRM High-Side Switch | Telecom POL Converter |
|---|---|
Use Scenario: High-current, high-frequency synchronous buck stage in 1U server motherboard delivering 50–100 A at 0.8–1.2 V from 12 V input. IC Role / Device Role / Timing Role: High-side power switch handling full load current with minimal conduction loss and fast turn-on/turn-off transitions. Use Value: 6.7 mΩ RDS(on) at 10 V reduces I²R loss by >30% vs. comparable 8 mΩ devices, directly improving VRM efficiency and reducing thermal load on CPU VRM heatsink. | Use Scenario: Point-of-load DC/DC converter in 48 V telecom shelf powering FPGA, ASIC, or DSP subsystems at 3.3 V/5 V. IC Role / Device Role / Timing Role: Primary switching FET in non-isolated buck regulator operating at 300–600 kHz with tight transient response requirements. Use Value: 8 nC Qg at 4.5 V enables low gate drive loss and clean switching edges, minimizing EMI and improving regulation accuracy under dynamic load steps. |
| Battery Protection Circuit | High-Current Load Switch |
Use Scenario: Reverse-polarity and overcurrent protection in 24 V industrial battery packs for mobile robotics or UPS systems. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET for bidirectional current blocking and fast fault shutdown. Use Value: 1.1–2.4 V VGS(th) range ensures reliable turn-on with low-voltage microcontroller GPIO, while 100% UIS testing guarantees survival during battery short-circuit events. | Use Scenario: Hot-swap and inrush current limiting for 12 V/24 V system rails powering PCIe add-in cards or modular I/O boards. IC Role / Device Role / Timing Role: Single N-channel load switch controlling power delivery with controlled slew rate and integrated body diode conduction path. Use Value: 0.77 V body diode forward voltage enables low-loss reverse current path during hot-plug events, reducing voltage droop and preventing system brownout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiRA34DP-T1-GE3 | Same RDS(on) specs but in PowerPAK® 8x8 package; larger footprint (8 mm × 8 mm), lower RthJC = 1.8 °C/W. | Better thermal headroom for >30 W continuous dissipation; requires more PCB area and different layout. | Select when thermal budget is tighter than board space constraints, e.g., in sealed industrial enclosures with limited airflow. |
| IRLHS6342TRPBF | 40 V rating, 7.5 mΩ @ 4.5 V, Qg = 10.5 nC, in PowerPAK® 1212-8; slightly higher gate charge and RDS(on). | Compatible pinout and footprint; suitable for 24 V systems requiring extended voltage margin. | Choose when 30 V rating is insufficient and 40 V headroom is needed, such as in automotive 24 V auxiliary rails or variable-input telecom systems. |
Compared with SISA34DN-T1-GE3, SiRA34DP-T1-GE3 trades compact size for superior thermal capability, while IRLHS6342TRPBF offers higher voltage rating and identical packaging at modest cost and loss penalties-enabling design flexibility across thermal, spatial, and voltage-margin requirements.
Availability
SISA34DN-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC power supplies, telecom POL converters, and battery protection circuits requiring stable component supply and long-term production continuity.
Supply support for SISA34DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and miniaturization.
The SISA34DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-efficiency DC/DC conversion in space-constrained computing, telecom, and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SISA34DN-T1-GE3 at 70 °C case temperature?
The SISA34DN-T1-GE3 is rated for 33.2 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8 package under sustained power dissipation; actual usable current depends on PCB copper area, airflow, and ambient temperature. The SISA34DN-T1-GE3 datasheet confirms this value under steady-state conditions with proper thermal design.
Does SISA34DN-T1-GE3 support 3.3 V logic-level gate drive?
Yes, the SISA34DN-T1-GE3 has a gate threshold voltage (VGS(th)) range of 1.1–2.4 V, ensuring reliable turn-on with 3.3 V gate drive. At VGS = 4.5 V, it delivers RDS(on) = 9.8 mΩ max, making it suitable for 3.3 V and 5 V controller outputs. The SISA34DN-T1-GE3 is explicitly characterized for 4.5 V operation in its datasheet, including Qg, RDS(on), and dynamic parameters.
What is the recommended soldering profile for SISA34DN-T1-GE3?
The SISA34DN-T1-GE3 requires lead-free reflow per JEDEC J-STD-020, with peak temperature of 260 °C for 20–40 seconds. Ramp-up and ramp-down rates must not exceed 6 °C/s, and time above 180 °C should be 70–180 seconds. Vishay document 73257 provides the full profile. Manual soldering is not recommended due to the leadless PowerPAK 1212-8 construction. The SISA34DN-T1-GE3 datasheet references this profile in its soldering recommendations section.
Is SISA34DN-T1-GE3 suitable for synchronous rectification?
Yes, the SISA34DN-T1-GE3 is well-suited for synchronous rectification due to its low RDS(on) (6.7 mΩ @ 10 V), low Qg (16.7 nC @ 10 V), and fast switching times (e.g., 11 ns td(on) with 10 V drive). Its body diode exhibits trr = 22 ns and Qrr = 11 nC, minimizing reverse recovery loss. The SISA34DN-T1-GE3 datasheet includes full dynamic and diode characterization supporting this use case.
What is the junction-to-ambient thermal resistance (RthJA) for SISA34DN-T1-GE3 on a standard FR4 board?
On a 1" × 1" FR4 board, the SISA34DN-T1-GE3 has RthJA = 31 °C/W (typical) and 39 °C/W (maximum) for t ≤ 10 s. This value assumes standard JEDEC test conditions; actual performance improves significantly with added PCB copper. The SISA34DN-T1-GE3 datasheet specifies these values in the Thermal Resistance Ratings table and confirms the test board configuration in footnote "a".
SISA34DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 4.5 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 20.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SISA34DN-T1-GE3 FAQ
1.How can I place an order for SISA34DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISA34DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISA34DN-T1-GE3 reliable?
The price and inventory of SISA34DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISA34DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISA34DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISA34DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISA34DN-T1-GE3?
SISA34DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISA34DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISA34DN-T1-GE3?
For technical support, including SISA34DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISA34DN-T1-GE3 requirements.
6.How does Aetrix verify that SISA34DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISA34DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISA34DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISA34DN-T1-GE3?
All SISA34DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISA34DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISA34DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISA34DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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