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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISA72DN-T1-GE3

Name: SISA72DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISA72DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISA72DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SISA72DN-T1-GE3.pdf

Description:: MOSFET N-CH 40V 60A PPAK1212-8

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Product details

Overview

SISA72DN-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8 package, delivering R_DS(on) = 3.5 mΩ at V_GS = 10 V and 4.8 mΩ at V_GS = 4.5 V, with 60 A continuous drain current (T_J = 150 °C) and 19.5 nC total gate charge - optimized for high-efficiency synchronous rectification and DC/DC power supplies.

For engineers reviewing the SISA72DN-T1-GE3 datasheet, SISA72DN-T1-GE3 pinout, SISA72DN-T1-GE3 application, or SISA72DN-T1-GE3 equivalent, this page provides verified device identity, validated thermal and switching parameters, confirmed PowerPAK 1212-8 terminal mapping, real-world application context for telecom POL and battery protection circuits, and two technically documented alternative MOSFETs with explicit functional and layout differences.

Technical Context

This MOSFET uses TrenchFET® Gen IV silicon technology, tuned specifically for low R_DS(on) × Q_oss figure-of-merit, with 100 % R_g and UIS testing performed. Its gate threshold voltage ranges from 1.1 V to 2.4 V, and it features a body diode with t_rr = 31 ns and Q_rr = 23 nC at I_F = 10 A.

The PowerPAK 1212-8 package provides ultra-low junction-to-case thermal resistance (R_thJC = 1.9 °C/W typ.), direct bottom-side copper exposure for enhanced board-level heat transfer, and a 3.3 mm × 3.3 mm footprint - enabling high-current density designs without forced cooling in space-constrained applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - maximum drain-source blocking voltage suitable for 12 V and 24 V input DC/DC systems
R_DS(on) @ 10 V	3.5 mΩ max - enables <1 W conduction loss at 60 A, critical for high-current synchronous rectifiers
R_DS(on) @ 4.5 V	4.8 mΩ max - supports logic-level gate drive in low-voltage control architectures
Q_g @ 10 V	41.5 nC typ - determines gate driver power requirement and switching speed in hard-switched topologies
I_D (continuous)	60 A @ T_C = 25 °C - rated for high-current power stages when mounted on thermally robust PCBs
R_thJC	1.9 °C/W typ. - allows >50 W power dissipation with minimal junction temperature rise when heatsinked to PCB copper
Body diode t_rr	31 ns typ. - reduces reverse recovery losses in synchronous buck converters operating above 300 kHz

Pinout & Package

PowerPAK® 1212-8 is a leadless surface-mount package with exposed drain pad on the bottom side and 8 terminals on the periphery. Dimensions: 3.3 mm × 3.3 mm × 1.04 mm (L × W × H), with 0.65 mm pitch.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source connections reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Four parallel drain terminals tied to large bottom-side copper pad for optimal thermal and electrical path to PCB
4	Gate (G)	Single gate terminal located adjacent to source pins - enables Kelvin-source gate drive layout for precise V_GS control

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers lowest R_DS(on) × Q_oss FOM among 40 V discrete MOSFETs in same package class
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress
Exposed drain pad	Enables direct thermal coupling to PCB ground plane - reduces R_thJA by up to 60 % vs. standard SO-8
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material requirements
Low Q_gd/Q_g ratio	0.10 typical (4.2/41.5 nC) - improves hard-switching EMI behavior and Miller immunity in high-dV/dt environments

Applications

Server VRM Output Stage	Telecom Point-of-Load Converter
Use Scenario: High-current, high-frequency synchronous buck converter supplying core voltage to multi-core CPUs in 1U servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET handling up to 60 A DC output current with <10 ns switching transitions. Use Value: 3.5 mΩ R_DS(on) minimizes conduction loss at full load; 19.5 nC Q_g enables efficient 1 MHz operation with standard gate drivers.	Use Scenario: 48 V to 3.3 V/12 V isolated DC/DC brick powering baseband processing units in 5G radio units. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology, operating at 300–500 kHz. Use Value: 31 ns body diode t_rr and low Q_rr suppress shoot-through risk and reduce dead-time losses during zero-voltage switching transitions.
Battery Protection Circuit	Industrial Motor Drive Half-Bridge
Use Scenario: Smart Li-ion battery pack with integrated protection IC monitoring overcurrent, short-circuit, and overtemperature events. IC Role / Device Role / Timing Role: Primary discharge path switch placed between battery cell stack and load connector, controlled by protection ASIC. Use Value: 60 A continuous rating supports >50 A peak loads; 40 V V_DS accommodates 10S Li-ion packs (up to 42 V fully charged).	Use Scenario: 24 V BLDC motor controller for HVAC actuators or robotic joints requiring compact, thermally efficient half-bridge outputs. IC Role / Device Role / Timing Role: High-side or low-side switch in three-phase inverter stage, driven by isolated gate driver with 4.5 V logic compatibility. Use Value: 4.8 mΩ R_DS(on) @ 4.5 V ensures full enhancement with microcontroller GPIO drive; PowerPAK 1212-8 footprint saves >40 % board area vs. TSSOP-8.

Server VRM Output Stage

Telecom Point-of-Load Converter

Use Scenario: High-current, high-frequency synchronous buck converter supplying core voltage to multi-core CPUs in 1U servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET handling up to 60 A DC output current with <10 ns switching transitions.

Use Value: 3.5 mΩ R_DS(on) minimizes conduction loss at full load; 19.5 nC Q_g enables efficient 1 MHz operation with standard gate drivers.

Use Scenario: 48 V to 3.3 V/12 V isolated DC/DC brick powering baseband processing units in 5G radio units.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology, operating at 300–500 kHz.

Use Value: 31 ns body diode t_rr and low Q_rr suppress shoot-through risk and reduce dead-time losses during zero-voltage switching transitions.

Battery Protection Circuit

Industrial Motor Drive Half-Bridge

Use Scenario: Smart Li-ion battery pack with integrated protection IC monitoring overcurrent, short-circuit, and overtemperature events.

IC Role / Device Role / Timing Role: Primary discharge path switch placed between battery cell stack and load connector, controlled by protection ASIC.

Use Value: 60 A continuous rating supports >50 A peak loads; 40 V V_DS accommodates 10S Li-ion packs (up to 42 V fully charged).

Use Scenario: 24 V BLDC motor controller for HVAC actuators or robotic joints requiring compact, thermally efficient half-bridge outputs.

IC Role / Device Role / Timing Role: High-side or low-side switch in three-phase inverter stage, driven by isolated gate driver with 4.5 V logic compatibility.

Use Value: 4.8 mΩ R_DS(on) @ 4.5 V ensures full enhancement with microcontroller GPIO drive; PowerPAK 1212-8 footprint saves >40 % board area vs. TSSOP-8.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	Same PowerPAK 1212-8 package; higher R_DS(on) = 4.0 mΩ @ 10 V; lower Q_g = 34 nC	Better suited for high-frequency, low-Q_g applications where conduction loss margin exists	Select when prioritizing switching efficiency over conduction loss in sub-500 kHz designs
IRFH8326TRPBF	PowerSO-8 package; R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 42 nC; higher R_thJC = 2.4 °C/W	Requires larger PCB footprint and additional thermal vias to match thermal performance	Choose only if legacy PowerSO-8 layout reuse is mandatory and thermal headroom permits

Compared with SISA72DN-T1-GE3, SiR872DP-T1-GE3 trades 0.5 mΩ higher R_DS(on) for 7.5 nC lower Q_g, improving high-frequency efficiency but increasing conduction loss at >40 A; IRFH8326TRPBF offers marginally lower R_DS(on) but requires 25 % more board area and delivers 26 % higher junction temperature rise under identical PCB thermal conditions.

Availability

SISA72DN-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC power supplies, synchronous rectification circuits, and battery protection systems requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.

Supply support for SISA72DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISA72DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, high-frequency DC/DC conversion in telecom, computing, and industrial power systems where low R_DS(on) × Q_oss and thermal density are critical.

FAQ

What is the maximum continuous drain current rating for SISA72DN-T1-GE3 at 70 °C case temperature?

The SISA72DN-T1-GE3 is rated for 60 A continuous drain current at both T_C = 25 °C and T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design enabled by the PowerPAK 1212-8 package's low R_thJC of 1.9 °C/W, allowing sustained high-current operation without derating across this case temperature range. The 60 A rating applies under steady-state conditions with proper PCB thermal management.

Does SISA72DN-T1-GE3 support 4.5 V gate drive in practical applications?

Yes, SISA72DN-T1-GE3 is fully characterized for 4.5 V gate drive: R_DS(on) is guaranteed ≤ 4.8 mΩ at V_GS = 4.5 V and I_D = 10 A, and its gate threshold voltage (V_GS(th)) ranges from 1.1 V to 2.4 V - ensuring strong enhancement with standard 4.5 V logic-level controllers. This makes SISA72DN-T1-GE3 suitable for microcontroller-driven motor control and battery-powered systems where 5 V rail availability is constrained.

What is the thermal resistance from junction to ambient for SISA72DN-T1-GE3 on a standard FR4 board?

On a 1" × 1" FR4 board, the SISA72DN-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 33 °C/W, with a typical value of 24 °C/W. This value assumes surface mounting per Vishay's recommended land pattern (Document 72597). Performance improves significantly with added copper area: extending the drain pad beyond 0.3 in² yields diminishing returns, while solid internal copper planes can reduce R_thJA to <15 °C/W in optimized 4-layer boards.

Is SISA72DN-T1-GE3 suitable for avalanche energy handling in inductive switching applications?

Yes, SISA72DN-T1-GE3 is rated for single-pulse avalanche energy (E_AS) of 20 mJ and single-pulse avalanche current (I_AS) of 20 A with L = 0.1 mH. These ratings are validated per JEDEC standards and confirm its capability to safely absorb inductive energy during unclamped inductive switching events - a key requirement in motor drive and relay driving applications where flyback energy must be managed without external snubbers.

How does the PowerPAK 1212-8 package of SISA72DN-T1-GE3 compare to SO-8 in thermal performance?

The PowerPAK 1212-8 package used by SISA72DN-T1-GE3 achieves a typical junction-to-case thermal resistance (R_thJC) of 1.9 °C/W, versus ~20 °C/W for standard SO-8 - a 10× improvement. In practical terms, under 2 W dissipation on a 45 °C board, SISA72DN-T1-GE3 reaches only 49.8 °C junction temperature, while an SO-8 device would exceed 85 °C. This enables higher power density, reduced r_DS(on) drift, and elimination of external heatsinks in many mid-power applications.

SISA72DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 4.5 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3240 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SISA72DN-T1-GE3 FAQ

1.How can I place an order for SISA72DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISA72DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISA72DN-T1-GE3 reliable?

The price and inventory of SISA72DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISA72DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISA72DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISA72DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISA72DN-T1-GE3?

SISA72DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISA72DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISA72DN-T1-GE3?

For technical support, including SISA72DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISA72DN-T1-GE3 requirements.

6.How does Aetrix verify that SISA72DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISA72DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISA72DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISA72DN-T1-GE3?

All SISA72DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISA72DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISA72DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISA72DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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