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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISC06DN-T1-GE3

Name: SISC06DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISC06DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISC06DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SISC06DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 27.6A/40A PPAK

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Product details

Overview

SISC06DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET with integrated monolithic Schottky body diode, rated for 40 A continuous drain current at TC = 25 °C, R_DS(on) = 2.7 mΩ @ V_GS = 10 V, and Q_g = 17.5 nC @ V_GS = 4.5 V, used in high-efficiency synchronous buck converters and DC/DC power stages.

For engineers reviewing the SISC06DN-T1-GE3 datasheet, SISC06DN-T1-GE3 pinout, SISC06DN-T1-GE3 application, or SISC06DN-T1-GE3 equivalent, key selection criteria include its PowerPAK® 1212-8 leadless package, 100 % R_g and UIS tested reliability, low R_DS(on) at 4.5 V gate drive, and integrated SkyFET® Schottky diode enabling efficient synchronous rectification without external diode.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon architecture optimized for low conduction and switching losses in high-frequency DC/DC conversion. Its monolithic SkyFET® structure integrates a Schottky diode with low V_SD = 0.47 V (typ.) and fast t_rr = 31 ns (typ.), eliminating reverse recovery charge penalty in hard-switched topologies.

The device features robust avalanche capability (E_AS = 11.25 mJ), 100 % UIS tested per JEDEC JESD22-A115, and thermal design support via R_thJC = 2.1 °C/W (typ.) and R_thJA = 25 °C/W (t ≤ 10 s). Gate threshold voltage is tightly specified at 1.0–2.1 V, ensuring stable turn-on under low-voltage control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 24 V input rails and 12 V output synchronous buck stages.
R_DS(on) @ 10 V	2.7 mΩ max - Enables <1 W conduction loss at 20 A, critical for high-current POL converters.
R_DS(on) @ 4.5 V	4.0 mΩ max - Ensures full enhancement with 5 V or 4.5 V gate drivers, supporting logic-level control.
Q_g @ 4.5 V	17.5 nC typ. - Low gate charge reduces driver power and enables >1 MHz switching in compact designs.
I_D (continuous)	40 A @ T_C = 25 °C - High current rating supports single-device solutions for up to 100 W point-of-load applications.
V_SD	0.47 V typ. @ I_S = 5 A - Low forward voltage of integrated Schottky diode minimizes body diode conduction loss during dead-time.
E_AS	11.25 mJ - Avalanche energy rating supports robust operation under transient overvoltage or inductive kickback.

Pinout & Package

Package: PowerPAK® 1212-8 - 3.3 mm × 3.3 mm leadless surface-mount package with exposed drain copper pads on bottom side for enhanced thermal performance and low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8	Drain (D)	Four parallel drain terminals connected to internal die drain metallization and bottom-side exposed copper; primary heat path and high-current return path.
4	Gate (G)	Single gate input terminal; low R_g = 0.4–2 Ω ensures fast, controlled switching with minimal ringing.
5, 6, 7	Source (S)	Three parallel source terminals tied to internal source metallization and top-side copper; forms low-impedance source loop for gate drive return and current sensing.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for reduced total power loss in high-frequency switching.
SkyFET® monolithic Schottky diode	Eliminates reverse recovery charge (Q_rr = 19 nC typ.), enabling zero-voltage switching (ZVS) compatibility and reducing EMI in synchronous rectifiers.
100 % R_g and UIS tested	Ensures gate robustness against ESD and system-level transients; guarantees avalanche survivability per JEDEC standard.
PowerPAK® 1212-8 package	Provides 2.1 °C/W junction-to-case thermal resistance and 3.3 mm × 3.3 mm footprint-ideal for space-constrained server VRMs and notebook power stages.
Low V_GS(th) range (1.0–2.1 V)	Enables reliable turn-on with 3.3 V or 5 V logic-level gate drivers while maintaining noise immunity against false triggering.

Applications

Server Voltage Regulator Modules (VRMs)	High-Density Notebook DC/DC Converters
Use Scenario: Primary high-side switch in multiphase 48 V-to-12 V or 12 V-to-1 V buck converters powering CPUs/GPUs in rack-mounted servers. IC Role / Device Role / Timing Role: High-current, high-frequency power switch operating at 300–1000 kHz with precise duty-cycle control and fast transient response. Use Value: 2.7 mΩ R_DS(on) and 17.5 nC Q_g minimize combined conduction and switching losses, improving VRM efficiency by ≥0.5 % at 40 A load.	Use Scenario: Synchronous rectifier in compact 19 V input-to-5 V/3.3 V secondary-side buck converters for USB-C PD and display power rails. IC Role / Device Role / Timing Role: Low-V_GS enabled synchronous rectifier replacing external Schottky diodes to reduce forward drop and improve light-load efficiency. Use Value: Integrated SkyFET® Schottky diode with 0.47 V V_SD and 31 ns t_rr eliminates reverse recovery loss, increasing converter efficiency by up to 2.1 % at 2 A load.
Industrial PLC Power Supplies	Telecom Intermediate Bus Converters
Use Scenario: Output stage switch in isolated 48 V-to-12 V flyback or active-clamp forward converters supplying I/O modules and fieldbus interfaces. IC Role / Device Role / Timing Role: Robust power switch handling repetitive 15 A pulsed loads and surviving 100 V line transients per IEC 61000-4-5. Use Value: 11.25 mJ E_AS and 100 % UIS testing ensure reliable operation under short-circuit and overload conditions without derating.	Use Scenario: High-efficiency 48 V-to-12 V intermediate bus converter in 1 RU telecom shelf systems requiring >95 % peak efficiency and <15 mm height. IC Role / Device Role / Timing Role: Main switching element in interleaved two-phase buck topology operating at 500 kHz with tight thermal constraints. Use Value: PowerPAK® 1212-8 package delivers 2.1 °C/W R_thJC, allowing 40 A continuous current with minimal heatsink-reducing board area by 35 % vs. SO-8 alternatives.

Server Voltage Regulator Modules (VRMs)

High-Density Notebook DC/DC Converters

Use Scenario: Primary high-side switch in multiphase 48 V-to-12 V or 12 V-to-1 V buck converters powering CPUs/GPUs in rack-mounted servers.

IC Role / Device Role / Timing Role: High-current, high-frequency power switch operating at 300–1000 kHz with precise duty-cycle control and fast transient response.

Use Value: 2.7 mΩ R_DS(on) and 17.5 nC Q_g minimize combined conduction and switching losses, improving VRM efficiency by ≥0.5 % at 40 A load.

Use Scenario: Synchronous rectifier in compact 19 V input-to-5 V/3.3 V secondary-side buck converters for USB-C PD and display power rails.

IC Role / Device Role / Timing Role: Low-V_GS enabled synchronous rectifier replacing external Schottky diodes to reduce forward drop and improve light-load efficiency.

Use Value: Integrated SkyFET® Schottky diode with 0.47 V V_SD and 31 ns t_rr eliminates reverse recovery loss, increasing converter efficiency by up to 2.1 % at 2 A load.

Industrial PLC Power Supplies

Telecom Intermediate Bus Converters

Use Scenario: Output stage switch in isolated 48 V-to-12 V flyback or active-clamp forward converters supplying I/O modules and fieldbus interfaces.

IC Role / Device Role / Timing Role: Robust power switch handling repetitive 15 A pulsed loads and surviving 100 V line transients per IEC 61000-4-5.

Use Value: 11.25 mJ E_AS and 100 % UIS testing ensure reliable operation under short-circuit and overload conditions without derating.

Use Scenario: High-efficiency 48 V-to-12 V intermediate bus converter in 1 RU telecom shelf systems requiring >95 % peak efficiency and <15 mm height.

IC Role / Device Role / Timing Role: Main switching element in interleaved two-phase buck topology operating at 500 kHz with tight thermal constraints.

Use Value: PowerPAK® 1212-8 package delivers 2.1 °C/W R_thJC, allowing 40 A continuous current with minimal heatsink-reducing board area by 35 % vs. SO-8 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-GE3	R_DS(on) = 2.3 mΩ @ 10 V, Q_g = 22.5 nC, same PowerPAK® 1212-8 package, higher gate charge increases driver loss at >1 MHz.	Better conduction loss but slower switching; preferred for <500 kHz applications where R_DS(on) dominates total loss.	Select SiR626DP-T1-GE3 when optimizing for ultra-low conduction loss in fixed-frequency, thermally limited designs.
IRLHS6342TRPBF	R_DS(on) = 3.2 mΩ @ 4.5 V, Q_g = 12.5 nC, PowerPAK® SC-70-6 package, lower current rating (15 A) and higher R_thJA = 100 °C/W.	Smaller footprint but limited to ≤15 A; unsuitable for high-current VRMs but viable for low-power auxiliary rails.	Choose IRLHS6342TRPBF only for space-constrained, low-current (<10 A) applications where gate drive efficiency outweighs conduction loss.

Compared with SiR626DP-T1-GE3 and IRLHS6342TRPBF, the SISC06DN-T1-GE3 strikes optimal balance between low R_DS(on) (2.7 mΩ), moderate Q_g (17.5 nC), and 40 A current capability-making it uniquely suited for high-density, high-efficiency 300–800 kHz buck converters where both conduction and switching losses must be minimized simultaneously.

Availability

SISC06DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, notebook DC/DC converters, and industrial PLC power supplies requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SISC06DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SISC06DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV Power MOSFET product line, engineered specifically for high-frequency, high-current DC/DC conversion in computing, communications, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for the SISC06DN-T1-GE3?

The SISC06DN-T1-GE3 is rated for 40 A continuous drain current at case temperature T_C = 25 °C, and 25.2 A at T_C = 70 °C. This rating assumes proper PCB copper area and thermal management per Vishay's recommended PowerPAK® 1212-8 pad layout in Application Note 826. Derating applies above 70 °C case temperature.

Does the SISC06DN-T1-GE3 include an integrated body diode, and what are its characteristics?

Yes, the SISC06DN-T1-GE3 integrates a monolithic SkyFET® Schottky diode. Its body diode has V_SD = 0.47 V (typ.) at I_S = 5 A and reverse recovery time t_rr = 31 ns (typ.) at I_F = 10 A, di/dt = 100 A/μs. This eliminates reverse recovery charge (Q_rr = 19 nC typ.), making it ideal for synchronous rectification.

What is the gate threshold voltage range for the SISC06DN-T1-GE3, and how does it affect drive requirements?

The SISC06DN-T1-GE3 has a gate threshold voltage V_GS(th) of 1.0–2.1 V at I_D = 250 μA. This low, tightly controlled range ensures reliable turn-on with 3.3 V or 5 V gate drivers while maintaining noise immunity. It supports logic-level operation without requiring level-shifting circuitry in most buck controller implementations.

Is the SISC06DN-T1-GE3 suitable for avalanche-prone applications such as inductive load switching?

Yes, the SISC06DN-T1-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy E_AS = 11.25 mJ with I_AS = 15 A. This makes it suitable for applications involving relay driving, motor control, or any circuit where inductive energy must be safely dissipated within the MOSFET.

What thermal resistance values are specified for the SISC06DN-T1-GE3 in its PowerPAK® 1212-8 package?

The SISC06DN-T1-GE3 specifies R_thJC = 2.1 °C/W (typ.) and 2.7 °C/W (max.) from junction-to-case (drain), and R_thJA = 25 °C/W (typ.) for t ≤ 10 s on a 1" × 1" FR4 board. These values enable accurate thermal modeling for high-power density layouts and confirm suitability for thermally constrained applications like thin-profile notebooks.

SISC06DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 27.6A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 2455 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 46.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SISC06DN-T1-GE3 FAQ

1.How can I place an order for SISC06DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISC06DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISC06DN-T1-GE3 reliable?

The price and inventory of SISC06DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISC06DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISC06DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISC06DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISC06DN-T1-GE3?

SISC06DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISC06DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISC06DN-T1-GE3?

For technical support, including SISC06DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISC06DN-T1-GE3 requirements.

6.How does Aetrix verify that SISC06DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISC06DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISC06DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISC06DN-T1-GE3?

All SISC06DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISC06DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISC06DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISC06DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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