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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISH103DN-T1-GE3

Name: SISH103DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH103DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISH103DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SH

Datasheet:: SISH103DN-T1-GE3.pdf

Description:: P-CHANNEL 30 V (D-S) MOSFET POWE

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Product details

Overview

SISH103DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET rated for -30 V drain-source voltage, with R_DS(on) of 8.9 mΩ at V_GS = -10 V and 15 mΩ at V_GS = -4.5 V, delivering -54 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency load switch in notebook battery management and adapter circuits.

For engineers reviewing the SISH103DN-T1-GE3 datasheet, SISH103DN-T1-GE3 pinout, SISH103DN-T1-GE3 application, or SISH103DN-T1-GE3 equivalent, key selection criteria include its PowerPAK 1212-8SH leadless package, low gate charge (23.3 nC at V_GS = -4.5 V), robust UIS rating, and thermal resistance of 2.3 °C/W (junction-to-case).

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_g (23.3 nC typ. at -4.5 V) and low C_iss (2540 pF). Its body diode exhibits t_rr = 14 ns and Q_rr = 5 nC, supporting synchronous rectification and reverse recovery–sensitive topologies.

The device operates across -55 °C to +150 °C junction temperature range and features ±25 V gate-source voltage rating, 100% R_g and UIS tested, and halogen-free/lead-free construction per Vishay's material categorization standard.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage in P-channel configuration; defines system rail compatibility up to 30 V negative supply.
R_DS(on) @ V_GS = -10 V	8.9 mΩ max - Enables <1 W conduction loss at 30 A, critical for high-current load switching efficiency.
R_DS(on) @ V_GS = -4.5 V	15 mΩ max - Supports logic-level gate drive from 4.5 V controllers without level shifting.
Q_g typ.	23.3 nC at V_GS = -4.5 V - Determines gate driver power requirement and switching speed in PWM applications.
I_D continuous	-54 A at T_C = 25 °C - Specifies maximum steady-state current under heatsink-cooled conditions.
R_thJC	2.3 °C/W typical - Enables accurate junction temperature estimation when mounted on a thermally optimized PCB pad.
V_GS(th)	-1.0 to -2.5 V - Threshold range ensures reliable turn-on with standard logic-level gate drivers.

Pinout & Package

Package: PowerPAK® 1212-8SH - 3.3 mm × 3.3 mm × 0.9 mm leadless surface-mount package with exposed copper bottom-side thermal pad and eight terminals. Designed for high-power density and low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection; electrically and thermally tied to bottom thermal pad for low-resistance return path and heat dissipation.
5, 6, 7, 8	Drain (D)	High-current drain node; all four pins paralleled internally to reduce resistance and inductance in high-frequency switching.
G	Gate (G)	Control terminal requiring ≤25 V swing; low R_g (1.7–6.0 Ω) enables fast edge rates with minimal external gate resistor.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for compact 3.3 mm × 3.3 mm footprint without sacrificing ruggedness.
100% R_g and UIS tested	Ensures gate robustness against transient overvoltage and guarantees unclamped inductive switching capability for reliability in real-world loads.
Low Q_gd/Q_g ratio	Q_gd = 8.6 nC / Q_g = 23.3 nC → ~37% - Reduces Miller plateau time and improves hard-switching immunity.
Optimized body diode	t_rr = 14 ns, Q_rr = 5 nC - Minimizes reverse recovery losses in synchronous buck or OR-ing configurations.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, enabling use in environmentally regulated consumer electronics.

Applications

Notebook Battery Protection Circuit	Notebook AC Adapter Switch
Use Scenario: Bidirectional current control between battery pack and system bus during charge/discharge cycles, including overcurrent and short-circuit cutoff. IC Role / Device Role / Timing Role: High-side P-channel load switch providing reverse polarity protection and dynamic current limiting via gate-controlled conduction. Use Value: R_DS(on) ≤ 15 mΩ at -4.5 V enables <0.5 W loss at 5 A, extending battery runtime while maintaining thermal safety in thin-profile chassis.	Use Scenario: Primary-side high-side switching in 19–20 V AC/DC adapter output stage, managing power delivery to motherboard rails. IC Role / Device Role / Timing Role: Synchronous rectifier replacement or main DC output switch, driven by controller IC with 4.5 V logic-compatible gate. Use Value: Low Q_g (23.3 nC) and fast t_f (24 ns) support >500 kHz switching, reducing magnetics size and improving adapter power density.
USB-C PD Load Switch	Industrial 24 V DC Power Distribution
Use Scenario: In-line power path control for USB-C Power Delivery systems handling up to 3 A at 20 V, with hot-swap and inrush current limiting. IC Role / Device Role / Timing Role: P-channel eFuse-style switch with fast fault response enabled by low R_DS(on) and integrated thermal sensing compatibility. Use Value: R_thJA = 26 °C/W (t ≤ 10 s) allows sustained 3 A operation on standard FR4 without external heatsink in portable designs.	Use Scenario: Centralized 24 V rail distribution in programmable logic controllers (PLCs), where multiple subsystems require independent enable/disable control. IC Role / Device Role / Timing Role: High-reliability load switch with 100% UIS screening, supporting inductive load switching and surge immunity per IEC 61000-4-5. Use Value: EAS = 31.2 mJ and I_AS = -25 A ensure survivability during 24 V bus transients and motor coil flyback events.

Notebook Battery Protection Circuit

Notebook AC Adapter Switch

Use Scenario: Bidirectional current control between battery pack and system bus during charge/discharge cycles, including overcurrent and short-circuit cutoff.

IC Role / Device Role / Timing Role: High-side P-channel load switch providing reverse polarity protection and dynamic current limiting via gate-controlled conduction.

Use Value: R_DS(on) ≤ 15 mΩ at -4.5 V enables <0.5 W loss at 5 A, extending battery runtime while maintaining thermal safety in thin-profile chassis.

Use Scenario: Primary-side high-side switching in 19–20 V AC/DC adapter output stage, managing power delivery to motherboard rails.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement or main DC output switch, driven by controller IC with 4.5 V logic-compatible gate.

Use Value: Low Q_g (23.3 nC) and fast t_f (24 ns) support >500 kHz switching, reducing magnetics size and improving adapter power density.

USB-C PD Load Switch

Industrial 24 V DC Power Distribution

Use Scenario: In-line power path control for USB-C Power Delivery systems handling up to 3 A at 20 V, with hot-swap and inrush current limiting.

IC Role / Device Role / Timing Role: P-channel eFuse-style switch with fast fault response enabled by low R_DS(on) and integrated thermal sensing compatibility.

Use Value: R_thJA = 26 °C/W (t ≤ 10 s) allows sustained 3 A operation on standard FR4 without external heatsink in portable designs.

Use Scenario: Centralized 24 V rail distribution in programmable logic controllers (PLCs), where multiple subsystems require independent enable/disable control.

IC Role / Device Role / Timing Role: High-reliability load switch with 100% UIS screening, supporting inductive load switching and surge immunity per IEC 61000-4-5.

Use Value: EAS = 31.2 mJ and I_AS = -25 A ensure survivability during 24 V bus transients and motor coil flyback events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR466DP-T1-GE3	V_DS = -30 V, R_DS(on) = 10.5 mΩ @ -10 V, but higher Q_g = 32 nC and larger PowerPAK 5x6 package.	Less suitable for space-constrained notebook adapters due to 5 mm × 6 mm footprint and slower switching.	Prefer SISH103DN-T1-GE3 when board area and switching speed are critical; choose SiR466DP-T1-GE3 only if higher pulse current margin is required.
IRF7425TRPBF	V_DS = -30 V, R_DS(on) = 14 mΩ @ -10 V, SO-8 package, no UIS testing, R_thJA = 62 °C/W.	Limited to lower-power, non-ruggedized applications due to inferior thermal performance and lack of UIS screening.	Select SISH103DN-T1-GE3 for battery management where reliability under transient stress is mandatory; IRF7425TRPBF may suffice only in cost-sensitive, low-duty-cycle uses.

Compared with SiR466DP-T1-GE3 and IRF7425TRPBF, the SISH103DN-T1-GE3 offers superior power density (3.3 mm × 3.3 mm), lowest R_DS(on) at logic-level drive, and factory-screened UIS robustness-making it the optimal choice for thermally constrained, high-reliability P-channel switching in portable power systems.

Availability

SISH103DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook battery management, AC adapter switching, and USB-C PD load switching requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SISH103DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and miniaturization.

The SISH103DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV P-channel portfolio, engineered specifically for high-current, low-voltage load switching in space- and thermal-constrained portable electronics.

FAQ

What is the maximum continuous drain current for SISH103DN-T1-GE3 at 70 °C case temperature?

The SISH103DN-T1-GE3 supports -43.2 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8SH package and must be validated against actual board layout and airflow. The SISH103DN-T1-GE3 datasheet confirms this value under steady-state conditions with proper heatsinking.

Does SISH103DN-T1-GE3 support logic-level gate drive?

Yes, the SISH103DN-T1-GE3 is fully compatible with logic-level gate drive: its V_GS(th) range (-1.0 V to -2.5 V) and R_DS(on) = 15 mΩ max at V_GS = -4.5 V ensure robust turn-on using standard 4.5 V microcontroller or PMIC outputs. The SISH103DN-T1-GE3 does not require gate boosting or level translation in typical notebook power architectures.

What is the thermal resistance from junction to ambient for SISH103DN-T1-GE3 on a 1" × 1" FR4 board?

On a 1" × 1" FR4 board, the SISH103DN-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 34 °C/W for t ≤ 10 s, with a typical value of 26 °C/W. This value assumes surface mounting per Vishay's recommended layout and is documented in the Thermal Resistance Ratings section of the SISH103DN-T1-GE3 datasheet.

Is SISH103DN-T1-GE3 suitable for avalanche energy handling?

Yes, the SISH103DN-T1-GE3 is rated for single-pulse avalanche energy (EAS) of 31.2 mJ and avalanche current (I_AS) of -25 A with L = 0.1 mH. These parameters are guaranteed by 100% UIS testing, making the SISH103DN-T1-GE3 appropriate for inductive load switching and fault-tolerant power paths in notebook adapters and battery systems.

What is the gate charge profile of SISH103DN-T1-GE3 at -4.5 V drive?

The SISH103DN-T1-GE3 has a total gate charge (Q_g) of 23.3 nC typical at V_GS = -4.5 V, with Q_gs = 8.4 nC and Q_gd = 8.6 nC. This low Q_g enables efficient high-frequency switching and reduces gate driver power loss. All values are measured per JEDEC standards and published in the SISH103DN-T1-GE3 specifications table.

SISH103DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8SH

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 54A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 155mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2540 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.67W (Ta), 41.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8SH

SISH103DN-T1-GE3 FAQ

1.How can I place an order for SISH103DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISH103DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISH103DN-T1-GE3 reliable?

The price and inventory of SISH103DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISH103DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISH103DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISH103DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISH103DN-T1-GE3?

SISH103DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISH103DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISH103DN-T1-GE3?

For technical support, including SISH103DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISH103DN-T1-GE3 requirements.

6.How does Aetrix verify that SISH103DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISH103DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISH103DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISH103DN-T1-GE3?

All SISH103DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISH103DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISH103DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISH103DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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