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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISH110DN-T1-GE3

Name: SISH110DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH110DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISH110DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SH

Datasheet:: SISH110DN-T1-GE3.pdf

Description:: MOSFET N-CH 20V 13.5A PPAK

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Product details

Overview

SISH110DN-T1-GE3 from Vishay Siliconix is an N-channel 20 V (D-S) fast-switching TrenchFET® Gen II power MOSFET in a PowerPAK® 1212-8SH package, with R_DS(on) = 5.3 mΩ at V_GS = 10 V, Q_g = 14 nC, and I_D = 21.1 A - optimized for synchronous buck converters and synchronous rectification in high-efficiency DC-DC power stages.

For engineers reviewing the SISH110DN-T1-GE3 datasheet, SISH110DN-T1-GE3 pinout, SISH110DN-T1-GE3 application, or SISH110DN-T1-GE3 equivalent, key selection criteria include low gate charge for PWM switching efficiency, 4.5 V logic-level drive capability, thermal resistance (R_thJA = 65 °C/W), and leadless PowerPAK 1212-8SH footprint compatibility with high-density PCB layouts.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) enables reliable turn-on with standard 3.3 V or 5 V logic, while its body diode exhibits t_rr = 30–60 ns and Q_rr = 25–50 nC - critical for minimizing reverse recovery losses in synchronous rectifier topologies.

The device is characterized for continuous operation up to T_J = 150 °C and supports pulsed drain currents up to 60 A. Its R_thJC = 1.9–2.4 °C/W enables effective heat transfer to the PCB via the exposed drain pad, and its 100% R_g testing ensures consistent gate drive timing across production lots.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - maximum drain-source blocking voltage; suitable for 12 V input rails and point-of-load converters.
R_DS(on) @ 10 V	5.3 mΩ - low conduction loss at full gate drive; enables <1 W conduction loss at 20 A.
R_DS(on) @ 4.5 V	7.8 mΩ - verified logic-level performance; supports direct drive from microcontroller GPIOs.
Q_g	14 nC typ. - low total gate charge reduces switching energy and driver stress in high-frequency PWM.
I_D (T_J = 150 °C)	21.1 A - continuous current rating under worst-case thermal conditions; defines safe steady-state load capacity.
t_r/t_f	10–15 ns - fast rise/fall times minimize transition losses in 500 kHz–1 MHz switching applications.
R_thJA	65 °C/W - junction-to-ambient thermal resistance on standard FR4; determines required copper area for thermal management.

Pinout & Package

Package: PowerPAK® 1212-8SH - leadless, thermally enhanced surface-mount package with 3.3 mm × 3.3 mm footprint, 0.9 mm height, and exposed drain pad on bottom side for PCB heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection; electrically and thermally tied to internal source metallization and bottom-side thermal pad.
5, 6, 7, 8	Drain (D)	Drain terminals; internally connected to exposed copper drain pad - primary thermal path to PCB.
G (top-side marked pad)	Gate (G)	Single gate terminal located at top edge; requires controlled impedance routing to minimize ringing during fast switching.

Key Features

Feature	Design Value
TrenchFET® Gen II architecture	Enables lower R_DS(on) per die area vs. planar MOSFETs - improves power density in compact DC-DC modules.
PWM-optimized switching	Low Q_gd/Q_g ratio (≈32%) reduces Miller-induced switching delay and improves controllability at high frequencies.
100% R_g tested	Guarantees gate resistance between 0.7–2.1 Ω - ensures predictable gate drive timing and EMI behavior across all units.
Exposed drain thermal pad	Provides low-R_thJC (1.9 °C/W) path to PCB - enables >70% of power dissipation to be conducted away from junction.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - qualified for industrial and consumer end-equipment.

Applications

Server VRM Output Stage	USB-C PD Fast-Charging Adapter
Use Scenario: High-current, high-efficiency 12 V → 1.0 V conversion delivering up to 120 A to CPU/GPU cores. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switches at 500–800 kHz with precise dead-time control. Use Value: 5.3 mΩ R_DS(on) minimizes conduction loss; 14 nC Q_g enables efficient gate driving with integrated controller's 2 A peak output.	Use Scenario: Secondary-side synchronous rectification in 65 W USB-C PD adapter operating at 100–200 kHz. IC Role / Device Role / Timing Role: N-channel replacement for Schottky diode in flyback secondary; driven by transformer-coupled or dedicated gate driver. Use Value: 0.8–1.2 V V_SD body diode forward drop reduces no-load losses; 30 ns t_rr prevents shoot-through during zero-voltage switching transitions.
Industrial PLC Power Supply	Automotive ADAS Camera Module
Use Scenario: 24 V input to 5 V/3.3 V isolated DC-DC converter powering I/O and communication interfaces. IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward topology; operates with 50–100 ns dead time. Use Value: 20 V V_DS rating accommodates 24 V rail transients; ±20 V V_GS rating supports robust gate drive margin against noise coupling.	Use Scenario: Compact 12 V → 3.3 V non-isolated buck regulator supplying image sensor and ISP in rear-view camera module. IC Role / Device Role / Timing Role: Integrated FET in monolithic buck controller IC; shares same die as controller for tight timing alignment. Use Value: 4.5 V R_DS(on) spec ensures stable operation with automotive-grade 3.3 V LDO bias; -55 °C to +150 °C T_J range meets AEC-Q101 stress test requirements.

Server VRM Output Stage

USB-C PD Fast-Charging Adapter

Use Scenario: High-current, high-efficiency 12 V → 1.0 V conversion delivering up to 120 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switches at 500–800 kHz with precise dead-time control.

Use Value: 5.3 mΩ R_DS(on) minimizes conduction loss; 14 nC Q_g enables efficient gate driving with integrated controller's 2 A peak output.

Use Scenario: Secondary-side synchronous rectification in 65 W USB-C PD adapter operating at 100–200 kHz.

IC Role / Device Role / Timing Role: N-channel replacement for Schottky diode in flyback secondary; driven by transformer-coupled or dedicated gate driver.

Use Value: 0.8–1.2 V V_SD body diode forward drop reduces no-load losses; 30 ns t_rr prevents shoot-through during zero-voltage switching transitions.

Industrial PLC Power Supply

Automotive ADAS Camera Module

Use Scenario: 24 V input to 5 V/3.3 V isolated DC-DC converter powering I/O and communication interfaces.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward topology; operates with 50–100 ns dead time.

Use Value: 20 V V_DS rating accommodates 24 V rail transients; ±20 V V_GS rating supports robust gate drive margin against noise coupling.

Use Scenario: Compact 12 V → 3.3 V non-isolated buck regulator supplying image sensor and ISP in rear-view camera module.

IC Role / Device Role / Timing Role: Integrated FET in monolithic buck controller IC; shares same die as controller for tight timing alignment.

Use Value: 4.5 V R_DS(on) spec ensures stable operation with automotive-grade 3.3 V LDO bias; -55 °C to +150 °C T_J range meets AEC-Q101 stress test requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR174DP-T1-GE3	R_DS(on) = 4.0 mΩ @ 10 V, Q_g = 22 nC, PowerPAK 1212-8 package - higher gate charge increases driver loss but lower R_DS(on) benefits high-current, low-frequency use.	Preferred in 300 kHz or lower buck converters where conduction loss dominates over switching loss.	Select SiR174DP-T1-GE3 when optimizing for <10 A average current and thermal-limited board space; verify gate driver peak current capability ≥2.5 A.
IRLML6344TRPBF	R_DS(on) = 32 mΩ @ 4.5 V, SOT-23 package, I_D = 4.3 A - significantly higher on-resistance and lower current rating; smaller footprint.	Suitable only for low-power (<5 W), space-constrained applications like sensor biasing or LED dimming.	Choose IRLML6344TRPBF only for sub-2 A loads where PCB area is more critical than efficiency; not recommended for synchronous rectification above 1 A.

Compared with SiR174DP-T1-GE3 and IRLML6344TRPBF, the SISH110DN-T1-GE3 delivers optimal balance of low R_DS(on), moderate Q_g, and 21.1 A current handling - making it the preferred choice for 10–60 W synchronous buck stages requiring both efficiency and layout flexibility.

Availability

SISH110DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial PLC power supplies, and automotive ADAS camera modules requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SISH110DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and thermally optimized packaging.

The SISH110DN-T1-GE3 belongs to Vishay's TrenchFET® Gen II logic-level MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing, communications, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for the SISH110DN-T1-GE3 at 70 °C ambient temperature?

The SISH110DN-T1-GE3 supports 16.9 A continuous drain current at T_A = 70 °C with proper PCB copper area for thermal dissipation. This value is derived from the absolute maximum ratings table and assumes standard mounting on 1" × 1" FR4 board per Vishay's characterization conditions. The SISH110DN-T1-GE3 must be derated linearly beyond this point based on actual board thermal performance.

Does the SISH110DN-T1-GE3 have a specified body diode reverse recovery time (t_rr)?

Yes, the SISH110DN-T1-GE3 specifies t_rr = 30–60 ns under test conditions of I_F = 3.2 A and di/dt = 100 A/μs. This parameter is critical for synchronous rectifier applications where reverse recovery losses impact efficiency. The SISH110DN-T1-GE3's t_rr is measured and guaranteed per the datasheet, enabling accurate loss modeling in high-frequency designs.

Can the SISH110DN-T1-GE3 be driven directly by a 3.3 V microcontroller GPIO without a level shifter?

Yes, the SISH110DN-T1-GE3 has a gate threshold voltage V_GS(th) of 1.5–2.5 V and is fully characterized down to V_GS = 4.5 V, where R_DS(on) = 7.8 mΩ max. A 3.3 V GPIO can reliably turn on the SISH110DN-T1-GE3 in most load conditions, though full 10 V drive is recommended for minimum R_DS(on) and highest efficiency in high-current applications.

What is the thermal resistance from junction to case (R_thJC) for the SISH110DN-T1-GE3?

The SISH110DN-T1-GE3 has a maximum R_thJC of 2.4 °C/W under steady-state conditions, with typical value of 1.9 °C/W. This low resistance is achieved through the exposed drain pad in the PowerPAK 1212-8SH package, which provides a direct thermal path from the silicon die to the PCB ground plane - essential for managing power dissipation in compact, high-current designs using the SISH110DN-T1-GE3.

Is the SISH110DN-T1-GE3 suitable for automotive applications requiring AEC-Q101 qualification?

The SISH110DN-T1-GE3 is not AEC-Q101 qualified per Vishay's official documentation. While it operates across -55 °C to +150 °C and meets industrial reliability standards, automotive-grade deployment requires explicit AEC-Q101 stress test validation. For automotive ADAS camera modules, the SISH110DN-T1-GE3 may be used in non-safety-critical subsystems only after full system-level qualification - consult Vishay's automotive product portfolio for AEC-Q101 alternatives.

SISH110DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen II

Package/Case:: PowerPAK® 1212-8SH

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 13.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.3mOhm @ 21.1A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8SH

SISH110DN-T1-GE3 FAQ

1.How can I place an order for SISH110DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISH110DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISH110DN-T1-GE3 reliable?

The price and inventory of SISH110DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISH110DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISH110DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISH110DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISH110DN-T1-GE3?

SISH110DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISH110DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISH110DN-T1-GE3?

For technical support, including SISH110DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISH110DN-T1-GE3 requirements.

6.How does Aetrix verify that SISH110DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISH110DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISH110DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISH110DN-T1-GE3?

All SISH110DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISH110DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISH110DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISH110DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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