My Inquiry
My Account
Vishay Siliconix SISH116DN-T1-GE3
- Part No.:
- SISH116DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8SH
- Datasheet:
-
SISH116DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 10.5A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SISH116DN-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® power MOSFET optimized for PWM-driven synchronous rectification and intermediate switching in DC-DC converters, with RDS(on) = 7.8 mΩ at VGS = 10 V, Qg = 15 nC, and 16.4 A continuous drain current at TA = 25 °C.
For engineers reviewing the SISH116DN-T1-GE3 datasheet, SISH116DN-T1-GE3 pinout, SISH116DN-T1-GE3 application, or SISH116DN-T1-GE3 equivalent, key selection criteria include low gate charge for high-frequency switching, 4.5 V logic-level drive capability, thermal performance in PowerPAK 1212-8SH package, and body diode recovery characteristics for synchronous buck topologies.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) and fast switching dynamics. Its gate threshold voltage (1.5–2.5 V) enables reliable turn-on with standard 3.3 V or 5 V logic, while the 1.9 °C/W typical junction-to-case thermal resistance supports high-current operation under constrained thermal conditions.
The device integrates a robust intrinsic body diode with trr = 30–60 ns and Qrr = 26–52 nC, enabling efficient reverse recovery in synchronous rectifier configurations. It is rated for 15 A avalanche current and 11 mJ single-pulse avalanche energy, confirming ruggedness in inductive switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 36 V nominal input rails and 20 % transient margin. |
| RDS(on) @ 10 V | 7.8 mΩ max - Enables <1 W conduction loss at 16.4 A, critical for high-efficiency power stages. |
| RDS(on) @ 4.5 V | 10.0 mΩ max - Ensures full enhancement with 3.3 V microcontroller GPIO or PWM controller outputs. |
| Qg | 15 nC typ - Reduces gate drive power and switching transition time in 500 kHz–1 MHz DC-DC designs. |
| tr/tf | 10–15 ns - Supports clean edge control and minimizes overlap loss in synchronous FET pairs. |
| TJ range | −55 to +150 °C - Qualified for industrial and automotive under-hood ambient environments. |
| RthJC | 1.9 °C/W typ - Allows direct thermal coupling to PCB copper or heatsink for >10 W power dissipation. |
Pinout & Package
Package: PowerPAK® 1212-8SH - leadless, 3.3 mm × 3.3 mm × 0.9 mm surface-mount package with exposed drain paddle on bottom side for enhanced thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source connection; pins 1–4 are internally bonded and electrically identical for low-inductance return path. |
| 5, 6, 7, 8 | Drain | Common drain connection; pins 5–8 tie to exposed copper paddle for thermal and electrical conduction to PCB ground plane. |
| G (top-side marked pad) | Gate | Single gate terminal located centrally on top surface; requires controlled trace routing to minimize ringing and EMI. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure-of-merit for high-frequency efficiency in compact footprints. |
| PWM-optimized switching | Low Qgd/Qgs ratio (5.1/6.7 nC) reduces Miller-induced shoot-through risk in half-bridge configurations. |
| 100 % Rg tested | Ensures consistent gate resistance (0.7–2.1 Ω) across production lots, improving gate driver design predictability. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, supporting green manufacturing requirements. |
| Exposed drain paddle | Enables direct thermal interface to inner-layer copper pours, reducing RthJA by up to 40 % vs. standard SO-8. |
Applications
| Synchronous Buck Converter | Synchronous Rectifier |
|---|---|
Use Scenario: Primary-side high-side switch in 12 V input → 1.2 V output VRM for CPU/GPU core power delivery. IC Role / Device Role / Timing Role: Low-side synchronous FET operating in phase with high-side controller, conducting during freewheeling interval. Use Value: Replaces Schottky diode to eliminate 0.4–0.6 V forward drop, increasing conversion efficiency by 3–5 % at 20 A load. | Use Scenario: Secondary-side rectification in isolated 48 V → 12 V telecom DC-DC brick. IC Role / Device Role / Timing Role: Active rectifier controlled by isolated gate driver synchronized to primary-side switching. Use Value: Achieves <0.01 V conduction loss at 15 A (vs. ~0.5 V for diode), reducing secondary-side heat generation by >80 %. |
| Intermediate Bus Converter | Hot-Swap Controller FET |
Use Scenario: 48 V → 12 V intermediate bus supply in data center server racks. IC Role / Device Role / Timing Role: Main power switch in non-isolated buck regulator delivering up to 40 A output. Use Value: Low RDS(on) and Qg enable >95 % peak efficiency at 500 kHz switching frequency with minimal heatsinking. | Use Scenario: Inrush-limiting FET in 24 V backplane hot-swap module per IEEE 1626. IC Role / Device Role / Timing Role: Linear-mode controlled pass element during startup, transitioning to saturation for steady-state conduction. Use Value: Rugged 15 A avalanche rating and −55 to +150 °C operation ensure reliability during repeated insertion cycles and fault transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6242TRPBF | RDS(on) = 8.2 mΩ @ 4.5 V; Qg = 14.5 nC; same PowerPAK 1212-8 package but no 100 % Rg test. | Similar synchronous rectifier use, but slightly higher conduction loss at 3.3 V gate drive. | Preferred where gate drive voltage is ≥4.5 V and Rg consistency is non-critical. |
| DMN3026LSD-13 | RDS(on) = 9.5 mΩ @ 4.5 V; Qg = 12.5 nC; SO-8 package with higher RthJA (50 °C/W). | Lower gate charge benefits ultra-high-frequency designs, but thermal performance limits >10 A continuous operation. | Select when board space allows SO-8 and switching frequency exceeds 2 MHz. |
Compared with IRLHS6242TRPBF and DMN3026LSD-13, the SISH116DN-T1-GE3 delivers the lowest RDS(on) at 4.5 V and highest avalanche ruggedness, making it optimal for thermally constrained, high-current synchronous buck stages requiring long-term reliability.
Availability
SISH116DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous buck converters, intermediate bus supplies, hot-swap modules, and telecom rectifiers requiring stable component supply across multi-year production cycles.
Supply support for SISH116DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SISH116DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-current DC-DC conversion in computing, telecom, and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SISH116DN-T1-GE3 at 70 °C ambient temperature?
The SISH116DN-T1-GE3 supports 13.1 A continuous drain current at TA = 70 °C with proper PCB copper area per Vishay's recommended footprint. This derating reflects thermal limitations of the PowerPAK 1212-8SH package and must be validated using actual board layout and airflow conditions. The SISH116DN-T1-GE3 datasheet specifies this value in the Absolute Maximum Ratings table under "Continuous drain current (TJ = 150 °C)".
Does SISH116DN-T1-GE3 support logic-level gate drive from a 3.3 V microcontroller?
Yes, the SISH116DN-T1-GE3 has a gate threshold voltage (VGS(th)) of 1.5–2.5 V and guaranteed RDS(on) ≤ 10.0 mΩ at VGS = 4.5 V, enabling full enhancement with 3.3 V logic. However, for lowest conduction loss, a 4.5–5 V gate drive is recommended. The SISH116DN-T1-GE3 achieves usable on-resistance even at 3.3 V, though not fully specified in datasheet min/max limits.
What is the purpose of the exposed drain paddle on the bottom of the SISH116DN-T1-GE3 package?
The exposed drain paddle on the SISH116DN-T1-GE3 serves dual functions: it provides low-inductance, low-resistance electrical connection to the drain terminals (pins 5–8), and acts as the primary thermal path from die to PCB copper. Per Vishay's layout guidelines, it must be soldered to a large thermal pad connected to internal ground planes to achieve the specified RthJC = 1.9 °C/W. The SISH116DN-T1-GE3 thermal performance depends critically on this interface.
Can SISH116DN-T1-GE3 be used in avalanche-rated applications such as inductive load switching?
Yes, the SISH116DN-T1-GE3 is rated for 15 A single-pulse avalanche current and 11 mJ avalanche energy, verified per JEDEC JESD24-1. It is suitable for controlled inductive switching where energy dissipation remains within these limits. Designers must calculate worst-case stored inductive energy and verify against the SISH116DN-T1-GE3 EAS curve in the datasheet's Typical Characteristics section.
Is SISH116DN-T1-GE3 pin-compatible with other PowerPAK 1212-8 devices?
The SISH116DN-T1-GE3 uses the standard PowerPAK 1212-8SH footprint with 8 terminals in dual-row configuration, matching mechanical dimensions and pad layout of Vishay's PowerPAK 1212-8 family. However, pin function alignment (e.g., gate location) is specific to this part - always verify pinout diagrams before substitution. The SISH116DN-T1-GE3 bottom-view pin numbering matches the official Vishay outline drawing 76384.
SISH116DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8SH
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.8mOhm @ 16.4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8SH
SISH116DN-T1-GE3 FAQ
1.How can I place an order for SISH116DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISH116DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISH116DN-T1-GE3 reliable?
The price and inventory of SISH116DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISH116DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISH116DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISH116DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISH116DN-T1-GE3?
SISH116DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISH116DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISH116DN-T1-GE3?
For technical support, including SISH116DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISH116DN-T1-GE3 requirements.
6.How does Aetrix verify that SISH116DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISH116DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISH116DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISH116DN-T1-GE3?
All SISH116DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISH116DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISH116DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISH116DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SISH116DN-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
