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Vishay Siliconix SISH407DN-T1-GE3
- Part No.:
- SISH407DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8SH
- Datasheet:
-
SISH407DN-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 15.4A/25A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:26,723
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Product details
Overview
SISH407DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load and battery switching in space-constrained applications. It features -20 V VDS, 9.5 mΩ RDS(on) at VGS = -4.5 V, -25 A continuous drain current (TC = 25 °C), PowerPAK® 1212-8SH package, and 38 nC total gate charge - enabling low conduction loss and fast switching in portable power management circuits.
For engineers reviewing the SISH407DN-T1-GE3 datasheet, SISH407DN-T1-GE3 pinout, SISH407DN-T1-GE3 application, or SISH407DN-T1-GE3 equivalent, key selection criteria include its -20 V rating, sub-10 mΩ on-resistance at logic-level drive, thermal resistance of 2.9 °C/W (junction-to-case), body diode recovery time of 56 ns, and suitability for bidirectional battery protection and reverse polarity protection circuits.
Technical Context
This device operates as a single P-channel MOSFET with trench-based silicon architecture optimized for low RDS(on) and high current density. Its gate threshold voltage range (-0.4 V to -1.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level control signals, while the 100 % Rg and UIS tested qualification supports robust operation in transient-prone power paths.
The PowerPAK® 1212-8SH package integrates exposed-drain thermal pads on both top and bottom surfaces, delivering 2.9 °C/W junction-to-case thermal resistance under steady-state conditions. Its leadless construction and 0.9 mm profile support ultra-thin PCB designs, with soldering validated per IPC-J-STD-020 up to 260 °C peak temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Supports battery systems up to 16 V nominal with margin for transients |
| RDS(on) max @ VGS = -4.5 V | 9.5 mΩ - Enables ≤150 mW conduction loss at 15.3 A DC load current |
| ID continuous (TC = 25 °C) | -25 A - Delivers high-current switching without external heatsink in thermally managed layouts |
| Qg typ. | 38 nC - Allows efficient gate driving with low-power controllers and reduces switching loss at 100–500 kHz |
| RthJC max | 3.8 °C/W - Enables direct thermal coupling to PCB copper or heatsink for >20 W power dissipation |
| VGS(th) | -0.4 V to -1.0 V - Ensures guaranteed turn-on with 3.3 V GPIO or dedicated load switch controllers |
| trr (body diode) | 56 ns - Minimizes reverse recovery loss in synchronous rectification or flyback catch diode replacement |
Pinout & Package
Package: PowerPAK® 1212-8SH - 3.3 mm × 3.3 mm × 0.9 mm leadless surface-mount package with dual-side thermal pad (exposed drain), RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection; electrically tied internally; used for return path and thermal conduction to PCB |
| 5, 6, 7, 8 | Drain (D) | High-current drain node; exposed copper pad on bottom provides primary thermal path and electrical connection |
| Center pad (underside) | Drain (D) | Primary thermal and current-carrying interface; must be soldered to large PCB copper area for rated performance |
| Top center terminal | Gate (G) | Control input; isolated metal pad requiring controlled trace routing to minimize EMI and gate ringing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 9.5 mΩ RDS(on) at -4.5 V in 3.3 mm² footprint, reducing board area vs. planar alternatives |
| 100 % Rg and UIS tested | Guarantees gate robustness against overvoltage and ruggedness against unclamped inductive switching stress |
| PowerPAK® 1212-8SH package | 0.9 mm height and dual-side thermal access allow integration into ultra-thin battery-powered devices |
| Low Qgd/Qgs ratio | 10 nC / 4 nC = 2.5 - Improves switching controllability and reduces Miller-induced shoot-through risk |
| Body diode VSD max | -1.2 V @ -10 A - Supports efficient reverse conduction in OR-ing and hot-swap applications without external diode |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Prevents reverse current flow and over-discharge in dual-cell Li-ion packs during charging or standby. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery disconnect path with fast response to protection IC signals. Use Value: 9.5 mΩ RDS(on) limits voltage drop to <150 mV at 15 A, preserving battery runtime and enabling accurate fuel gauging. | Use Scenario: Enables bidirectional power path control in USB-C PD sink applications requiring 20 V/5 A compliance. IC Role / Device Role / Timing Role: Load switch isolating VBUS from system rails during port detach or fault conditions. Use Value: -20 V rating and 56 ns body diode trr ensure safe handling of 20 V transients and efficient reverse conduction during cable insertion. |
| Industrial Sensor Node Power Gating | Automotive Body Control Module (BCM) Load Switch |
Use Scenario: Powers down wireless sensor subsystems (BLE, LoRa) between measurement cycles to extend multi-year battery life. IC Role / Device Role / Timing Role: Low-leakage P-channel switch enabling <1 μA off-state current and rapid wake-up (<100 ns delay). Use Value: -1 μA IDSS at -20 V and -0.4 V VGS(th) ensure stable gate control with weak pull-up networks and minimal quiescent drain. | Use Scenario: Controls 12 V accessory loads (LEDs, relays, fans) in automotive BCMs with load-dump and jump-start resilience. IC Role / Device Role / Timing Role: High-current load switch with integrated avalanche energy rating (20 mJ) for inductive load suppression. Use Value: 20 mJ EAS and -20 A IAS withstand typical automotive load-dump spikes without external TVS, reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML6344TRPBF | -20 V, 11.5 mΩ @ -4.5 V, SOT-23 package, 1.45 mm height | Lower current rating (-4.3 A), higher RDS(on), limited thermal capacity | Use where board space is critical and current ≤4 A; not suitable for >10 A continuous loads |
| DMG2305UVT-7 | -20 V, 42 mΩ @ -4.5 V, SOT-563 package, 1.1 mm height | Higher on-resistance, lower Qg (10 nC), smaller footprint but higher conduction loss | Select for ultra-low gate drive power in <2 A applications; avoid for high-efficiency battery switching |
Compared with IRLML6344TRPBF and DMG2305UVT-7, the SISH407DN-T1-GE3 delivers 2.5× lower RDS(on) than the latter and 2.3× higher current capability than the former - making it optimal for compact, high-current load switching where thermal performance and conduction efficiency are prioritized.
Availability
SISH407DN-T1-GE3 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, industrial IoT sensor nodes, and automotive body electronics requiring stable component supply across production lifecycles.
Supply support for SISH407DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The PowerPAK® TrenchFET® MOSFET product line targets high-density power switching in portable, automotive, and industrial systems - engineered for low RDS(on), fast switching, and robust thermal performance in compact packages.
FAQ
What is the maximum continuous drain current rating for SISH407DN-T1-GE3 at 70 °C case temperature?
The SISH407DN-T1-GE3 supports -25 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derated performance under real thermal conditions and assumes proper PCB copper area for heat spreading. The device maintains this current capability due to its 2.9 °C/W junction-to-case thermal resistance and PowerPAK® 1212-8SH package design. Always verify layout thermal performance using Vishay's recommended footprint in document 76384.
Does SISH407DN-T1-GE3 require a gate resistor for stable switching in a 5 V microcontroller-driven load switch?
Yes, SISH407DN-T1-GE3 benefits from an external gate resistor (typically 10–47 Ω) when driven by a 5 V microcontroller GPIO to dampen ringing and control dV/dt. Its 0.9–8.8 Ω gate resistance and 38 nC total gate charge make it susceptible to oscillation without proper gate control. The resistor also limits peak gate current and improves EMI behavior. For optimal performance, place the resistor close to the gate terminal and route the gate trace short and away from noisy signals.
Can SISH407DN-T1-GE3 be used in reverse polarity protection circuits, and what is its body diode forward voltage?
Yes, SISH407DN-T1-GE3 is commonly used for reverse polarity protection due to its integrated body diode. At -10 A source current and TJ = 25 °C, the body diode forward voltage (VSD) is -0.82 V (typical) to -1.2 V (max), enabling low-loss conduction during normal operation. Its 56 ns reverse recovery time minimizes switching loss when the device transitions between conduction and blocking states. Ensure gate is held at appropriate potential relative to source to maintain correct biasing during fault conditions.
Is SISH407DN-T1-GE3 suitable for hot-swap applications, and what avalanche capability does it offer?
Yes, SISH407DN-T1-GE3 is suitable for hot-swap applications due to its 20 mJ single-pulse avalanche energy (EAS) and -20 A avalanche current (IAS) rating. These parameters allow it to safely absorb inductive energy during sudden load insertion or removal without external clamping. Its 100 % UIS tested qualification further confirms ruggedness in unclamped inductive switching events. For sustained hot-swap use, combine with current-limiting circuitry and ensure thermal design accommodates transient power dissipation.
What is the gate threshold voltage range of SISH407DN-T1-GE3, and how does it affect 3.3 V logic compatibility?
The SISH407DN-T1-GE3 has a gate threshold voltage (VGS(th)) range of -0.4 V to -1.0 V at ID = -250 μA, ensuring full enhancement with 3.3 V logic-level drive (i.e., VGS = -3.3 V). At -2.5 V VGS, RDS(on) remains low at 13.8 mΩ, supporting robust operation even with marginal gate drive. This wide threshold window guarantees reliable turn-on across process and temperature variations, making SISH407DN-T1-GE3 well-suited for direct interfacing with 3.3 V microcontrollers and PMICs without level-shifting circuitry.
SISH407DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8SH
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 15.4A (Ta), 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 15.3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 93.8 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2760 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 33W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8SH
SISH407DN-T1-GE3 FAQ
1.How can I place an order for SISH407DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISH407DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISH407DN-T1-GE3 reliable?
The price and inventory of SISH407DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISH407DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISH407DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISH407DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISH407DN-T1-GE3?
SISH407DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISH407DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISH407DN-T1-GE3?
For technical support, including SISH407DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISH407DN-T1-GE3 requirements.
6.How does Aetrix verify that SISH407DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISH407DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISH407DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISH407DN-T1-GE3?
All SISH407DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISH407DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISH407DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISH407DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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