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Vishay Siliconix SISH617DN-T1-GE3
- Part No.:
- SISH617DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8SH
- Datasheet:
-
SISH617DN-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 13.9A/35A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,132
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Product details
Overview
SISH617DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in PowerPAK® 1212-8SH package, rated for -30 V drain-source voltage, 0.0123 Ω RDS(on) at VGS = -10 V, and -35 A continuous drain current at TC = 25 °C. It serves as a high-efficiency synchronous rectifier or load switch in notebook battery charging circuits.
For engineers reviewing the SISH617DN-T1-GE3 datasheet, SISH617DN-T1-GE3 pinout, SISH617DN-T1-GE3 application, or SISH617DN-T1-GE3 equivalent, key selection criteria include its low RDS(on) at -4.5 V gate drive, 20.5 nC total gate charge, robust UIS rating, and thermal performance in compact leadless packaging.
Technical Context
This device uses trench-gate silicon technology to achieve low on-resistance with fast switching characteristics. Its gate threshold voltage range of -1.2 V to -2.5 V enables reliable turn-on with standard logic-level gate drivers in high-side configurations.
The PowerPAK 1212-8SH package features exposed copper drain pads on the bottom side for enhanced thermal conduction, with maximum junction-to-case thermal resistance of 2.4 °C/W and junction-to-ambient (t ≤ 10 s) up to 33 °C/W on a 1" × 1" FR4 board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage in high-side switch or reverse-polarity protection applications |
| RDS(on) @ VGS = -10 V | 0.0123 Ω - Enables <1.9 W conduction loss at -13.9 A, critical for thermally constrained notebook adapters |
| RDS(on) @ VGS = -4.5 V | 0.0222 Ω - Supports efficient operation with 4.5 V logic-level gate drive without external level shifting |
| Qg typ. | 20.5 nC - Low gate charge reduces driver power and switching losses in high-frequency DC/DC stages |
| ID (continuous) | -35 A @ TC = 25 °C - High current capability suitable for primary-side synchronous rectification in 65 W+ adapters |
| EAS | 42 mJ - Robust avalanche energy rating ensures reliability during inductive switching transients |
| RthJC max. | 2.4 °C/W - Enables direct thermal coupling to PCB copper or heatsink for sustained high-power operation |
Pinout & Package
PowerPAK® 1212-8SH is a surface-mount, leadless, thermally enhanced package measuring 3.3 mm × 3.3 mm × 0.9 mm, with exposed drain terminals on the bottom side and top-side gate and source connections. The package supports high-density layout and improved thermal dissipation versus SO-8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Top Side) | Source | Common source node for internal parallel die; low-inductance connection point for return path |
| 5, 6, 7, 8 (Top Side) | Drain | Top-side drain terminals provide auxiliary routing access; primary current path flows through bottom-exposed drain pad |
| Center Pad (Bottom) | Drain | Exposed copper drain pad - main thermal and current path; requires full-solder coverage for optimal RthJA |
| G (Pin 1 Dot) | Gate | Single gate input with 0.4–4 Ω gate resistance; compatible with standard MOSFET drivers without external gate resistor |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Delivers industry-leading RDS(on) × Qg figure-of-merit for high-efficiency power conversion |
| 100 % Rg and UIS tested | Ensures gate robustness and unclamped inductive switching reliability in real-world adapter fault conditions |
| PowerPAK 1212-8SH package | Reduces board area by >50 % vs. SO-8 while improving thermal resistance by 40 % in typical layouts |
| VGS(th) = -1.2 to -2.5 V | Guarantees turn-on with 3.3 V or 5 V microcontroller GPIOs, eliminating need for gate driver ICs |
| Body diode trr = 33–50 ns | Minimizes reverse recovery losses in synchronous buck or flyback secondary-side rectification |
Applications
| High-Side Load Switch | Notebook Battery Charging Path |
|---|---|
|
Use Scenario: Controlling power delivery from AC adapter to battery management system with reverse-current blocking. IC Role / Device Role / Timing Role: P-channel high-side switch enabling bidirectional isolation and overvoltage protection. Use Value: Low 0.0222 Ω RDS(on) at -4.5 V gate drive minimizes voltage drop and heat generation during constant-current charging phases. |
Use Scenario: Isolating battery from system bus during charging to prevent backfeed and enable safe hot-swap. IC Role / Device Role / Timing Role: Reverse-polarity and reverse-current protection switch placed between battery and system PMIC. Use Value: -30 V VDS rating accommodates Li-ion stack voltages up to 12.6 V with margin; 42 mJ EAS withstands inrush transients. |
| Notebook Adapter Secondary Switch | USB-C PD Power Path Control |
|
Use Scenario: Synchronous rectification in 45–65 W notebook AC/DC adapters operating at 100–300 kHz. IC Role / Device Role / Timing Role: Low-side or high-side synchronous rectifier replacing Schottky diode in LLC or flyback output stage. Use Value: 20.5 nC Qg enables clean turn-on/turn-off with minimal overlap loss; 35 S gfs ensures stable gate control under load variation. |
Use Scenario: Power path management in dual-input USB-C PD notebooks supporting both AC adapter and external power bank. IC Role / Device Role / Timing Role: OR-ing FET controlling priority-based power source selection with fast switchover. Use Value: Fast 9–18 ns rise/fall times support <500 µs switchover; -1.2 V VGS(th) allows precise gate control using dedicated PD controller GPIOs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI7157DP-T1-GE3 | RDS(on) = 0.015 Ω @ -10 V; larger PowerPAK 1212-8 package (same footprint but thicker); higher Qg = 28 nC | Higher conduction loss at same current; better suited for lower-frequency, higher-current designs where gate drive strength is abundant | Select when thermal margin is available and lower gate drive complexity is prioritized over switching loss |
| DMN3026LSD-13 | RDS(on) = 0.025 Ω @ -4.5 V; SO-8 package; lower ID = -20 A; no UIS testing specified | Larger board area; limited avalanche ruggedness; less suitable for high-reliability adapter applications | Choose only for cost-sensitive, non-critical loads where space and ruggedness are secondary to BOM cost |
Compared with SI7157DP-T1-GE3 and DMN3026LSD-13, the SISH617DN-T1-GE3 delivers superior RDS(on) × Qg trade-off and certified UIS performance-making it the preferred choice for thermally constrained, high-reliability notebook power path designs requiring both efficiency and transient robustness.
Availability
SISH617DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook battery charging, adapter secondary-side switching, and USB-C PD power path control requiring stable component supply across production lifecycles.
Supply support for SISH617DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SISH617DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® portfolio, engineered specifically for high-density, high-efficiency portable power systems including ultrabooks, tablets, and USB-C accessories.
FAQ
What is the maximum continuous drain current rating for SISH617DN-T1-GE3 at 70 °C case temperature?
The SISH617DN-T1-GE3 supports -35 A continuous drain current at TC = 70 °C per the Absolute Maximum Ratings table. This rating reflects derated conduction capability under elevated thermal conditions while maintaining safe junction temperature limits up to 150 °C.
Does SISH617DN-T1-GE3 require a gate driver IC when used with a 3.3 V microcontroller?
Yes, the SISH617DN-T1-GE3 can be directly driven by a 3.3 V microcontroller GPIO because its gate threshold voltage range (-1.2 V to -2.5 V) ensures full enhancement at VGS = -3.3 V, delivering 0.0222 Ω RDS(on) without external level shifting or driver circuitry.
How does the PowerPAK 1212-8SH package of SISH617DN-T1-GE3 improve thermal performance compared to SO-8?
The PowerPAK 1212-8SH package of SISH617DN-T1-GE3 achieves 2.4 °C/W maximum junction-to-case thermal resistance-up to 40 % lower than typical SO-8 MOSFETs-due to its exposed bottom-side drain pad, enabling direct thermal transfer to PCB copper planes and reducing hotspot temperatures in high-current notebook adapter designs.
Is SISH617DN-T1-GE3 suitable for synchronous rectification in a 200 kHz flyback converter?
Yes, the SISH617DN-T1-GE3 is well-suited for synchronous rectification at 200 kHz due to its 20.5 nC total gate charge, 9–18 ns rise/fall times, and low 0.0222 Ω RDS(on) at -4.5 V, all of which minimize switching and conduction losses while maintaining stable gate control under high di/dt conditions.
What is the body diode forward voltage of SISH617DN-T1-GE3 at -11.1 A source current?
The body diode forward voltage (VSD) of SISH617DN-T1-GE3 is -0.8 V to -1.2 V at IS = -11.1 A and VGS = 0 V, as specified in the Drain-Source Body Diode Characteristics table-enabling low-loss freewheeling during dead-time intervals in synchronous converters.
SISH617DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8SH
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.9A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12.3mOhm @ 13.9A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 59 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1800 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8SH
SISH617DN-T1-GE3 FAQ
1.How can I place an order for SISH617DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISH617DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISH617DN-T1-GE3 reliable?
The price and inventory of SISH617DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISH617DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISH617DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISH617DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISH617DN-T1-GE3?
SISH617DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISH617DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISH617DN-T1-GE3?
For technical support, including SISH617DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISH617DN-T1-GE3 requirements.
6.How does Aetrix verify that SISH617DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISH617DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISH617DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISH617DN-T1-GE3?
All SISH617DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISH617DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISH617DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISH617DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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