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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS04DN-T1-GE3

Name: SISS04DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS04DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS04DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS04DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 50.5A/80A PPAK

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Product details

Overview

SISS04DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8S package, delivering R_DS(on) = 1.2 mΩ at V_GS = 10 V and 1.85 mΩ at V_GS = 4.5 V, with 28.7 nC total gate charge and 80 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification and DC/DC converter output stages.

For engineers reviewing the SISS04DN-T1-GE3 datasheet, SISS04DN-T1-GE3 pinout, SISS04DN-T1-GE3 application, or SISS04DN-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, thermally enhanced leadless package performance, body diode recovery characteristics (t_rr = 56 ns), and validated UIS robustness - critical for high-density buck converters and OR-ing circuits.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low on-resistance while maintaining fast switching dynamics. Its Q_g/Q_gd ratio and low Q_gd (5.8 nC) reduce switching losses and improve hard-switching efficiency in synchronous buck topologies.

The PowerPAK 1212-8S package integrates exposed-drain thermal pads on both top and bottom surfaces, enabling dual-side heat dissipation with R_thJC = 1.5 °C/W (typical) and R_thJA = 20 °C/W (t ≤ 10 s). The device is 100 % R_g and UIS tested per JEDEC JESD22-A109.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage suitable for 24 V input systems and 12 V bus OR-ing.
R_DS(on) @ V_GS = 10 V	1.2 mΩ - enables <1 W conduction loss at 80 A, supporting high-current power stages.
R_DS(on) @ V_GS = 4.5 V	1.85 mΩ - ensures robust operation with standard 5 V gate drivers in point-of-load converters.
Q_g (typ.)	28.7 nC - low gate charge reduces driver power demand and improves efficiency at 500 kHz–1 MHz switching.
I_D (continuous, T_C = 25 °C)	80 A - supports high-current synchronous rectifiers without external heatsinking under case-cooled conditions.
t_rr (body diode)	56 ns - fast reverse recovery minimizes shoot-through risk and EMI in synchronous rectification.
R_thJC (max)	1.9 °C/W - enables direct thermal coupling to PCB copper or heatsink for high-power density designs.

Pinout & Package

Package: PowerPAK® 1212-8S - 3.3 mm × 3.3 mm leadless surface-mount package with exposed drain terminals on top and bottom for enhanced thermal performance and compact layout.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8	Drain (D)	Four exposed-drain pads provide dual-side thermal path and low-inductance connection to ground plane or heatsink.
Gate (G)	Control terminal	Single gate pad located adjacent to source terminals - optimized for short gate loop and minimal ringing.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Enables 1.2 mΩ R_DS(on) at 30 V rating - industry-leading figure of merit for low-voltage power MOSFETs.
Optimized Q_gd/Q_gs ratio	Reduces Miller plateau time and improves controllability during hard switching in synchronous buck converters.
100 % R_g and UIS tested	Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress up to 45 mJ.
Thermally enhanced PowerPAK 1212-8S	Supports >65 W power dissipation with case cooling - eliminates need for discrete thermal vias in many 48-to-12 V DC/DC designs.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912).

Applications

Synchronous Buck Converter	Synchronous Rectification
Use Scenario: Primary-side high-side switch or secondary-side low-side switch in 24 V–48 V input, 3.3 V–12 V output DC/DC converters operating at 300 kHz–1 MHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to eliminate forward voltage drop and reduce conduction loss. Use Value: Achieves >95 % efficiency at 60 A load due to 1.85 mΩ R_DS(on) at 4.5 V drive and 56 ns body diode t_rr.	Use Scenario: Secondary-side rectification in isolated LLC or phase-shifted full-bridge converters for server VRMs and telecom power supplies. IC Role / Device Role / Timing Role: High-current, low-V_DS freewheeling switch conducting during transformer reset interval. Use Value: Enables 80 A continuous conduction with <0.8 V V_SD at 5 A, reducing rectifier loss by >40 % vs. 40 V Schottky diodes.
OR-ing Circuit	Load Switching
Use Scenario: Redundant 12 V power rail combining in industrial PLCs and network switches using ideal diode controllers. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET providing bidirectional current blocking and low-loss forward conduction. Use Value: Delivers <1.5 mΩ effective on-resistance per FET and supports hot-swap sequencing with controlled turn-on via gate driver.	Use Scenario: High-current system-level load switching in battery-powered test equipment and FPGA power domains. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) power switch controlling 50–80 A loads with fast turn-on (<25 ns) and low standby loss. Use Value: Eliminates mechanical relay wear-out and supports <100 k-cycle lifetime with no contact bounce or arcing.

Synchronous Buck Converter

Synchronous Rectification

Use Scenario: Primary-side high-side switch or secondary-side low-side switch in 24 V–48 V input, 3.3 V–12 V output DC/DC converters operating at 300 kHz–1 MHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to eliminate forward voltage drop and reduce conduction loss.

Use Value: Achieves >95 % efficiency at 60 A load due to 1.85 mΩ R_DS(on) at 4.5 V drive and 56 ns body diode t_rr.

Use Scenario: Secondary-side rectification in isolated LLC or phase-shifted full-bridge converters for server VRMs and telecom power supplies.

IC Role / Device Role / Timing Role: High-current, low-V_DS freewheeling switch conducting during transformer reset interval.

Use Value: Enables 80 A continuous conduction with <0.8 V V_SD at 5 A, reducing rectifier loss by >40 % vs. 40 V Schottky diodes.

OR-ing Circuit

Load Switching

Use Scenario: Redundant 12 V power rail combining in industrial PLCs and network switches using ideal diode controllers.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET providing bidirectional current blocking and low-loss forward conduction.

Use Value: Delivers <1.5 mΩ effective on-resistance per FET and supports hot-swap sequencing with controlled turn-on via gate driver.

Use Scenario: High-current system-level load switching in battery-powered test equipment and FPGA power domains.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) power switch controlling 50–80 A loads with fast turn-on (<25 ns) and low standby loss.

Use Value: Eliminates mechanical relay wear-out and supports <100 k-cycle lifetime with no contact bounce or arcing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 1.35 mΩ @ 10 V; larger PowerPAK 5x6 package; higher Q_g (42 nC)	Lower current density; better suited for forced-air cooled 100+ A designs where layout space allows	Choose when thermal margin >20 °C is required or board space permits larger footprint
IRLHS6342TRPBF	R_DS(on) = 1.7 mΩ @ 4.5 V; SO-8 package; lower I_D rating (40 A); no UIS testing	Limited to <40 A continuous; unsuitable for high-reliability OR-ing or avalanche-prone topologies	Acceptable only for cost-sensitive, low-power synchronous rectifiers with derated current

Compared with SiR872DP-T1-GE3 and IRLHS6342TRPBF, SISS04DN-T1-GE3 delivers superior power density (3.3 mm × 3.3 mm), lowest R_DS(on) at 4.5 V, and production-tested UIS capability - making it the preferred choice for space-constrained, high-efficiency 50–80 A DC/DC and OR-ing applications.

Availability

SISS04DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous buck converters, OR-ing circuits, high-power-density DC/DC modules, and industrial load switching applications requiring stable component supply and long-term manufacturing continuity.

Supply support for SISS04DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISS04DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, high-frequency DC/DC conversion in data center, telecom, and industrial power systems where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current rating for SISS04DN-T1-GE3 at 70 °C case temperature?

The SISS04DN-T1-GE3 supports 80 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with adequate copper area and thermal vias to maintain the case temperature at or below 70 °C under steady-state operation.

Does SISS04DN-T1-GE3 have integrated ESD protection on the gate?

Yes, the SISS04DN-T1-GE3 includes built-in gate oxide protection rated to ±100 nA I_GSS at ±12 V V_GS, and its gate-source leakage is guaranteed ≤100 nA per the datasheet. While not labeled as "HBM ESD rated" in the summary, the device passes 100 % R_g and UIS testing - indicating robust gate structure integrity under transient stress.

Can SISS04DN-T1-GE3 be used in a back-to-back configuration for AC switching or reverse polarity protection?

Yes, SISS04DN-T1-GE3 is suitable for back-to-back configuration in reverse polarity protection and bidirectional OR-ing circuits. Its 30 V V_DS, low R_DS(on), and symmetric source/drain layout in the PowerPAK 1212-8S package enable balanced conduction and blocking in either direction when paired with appropriate gate driving.

What is the typical body diode forward voltage (V_SD) of SISS04DN-T1-GE3 at 5 A and room temperature?

The typical body diode forward voltage V_SD of SISS04DN-T1-GE3 is 0.72 V at I_S = 5 A and V_GS = 0 V, as measured at T_J = 25 °C. This low V_SD contributes to reduced conduction loss during dead-time conduction in synchronous rectification applications.

Is SISS04DN-T1-GE3 compatible with lead-free reflow soldering profiles?

Yes, SISS04DN-T1-GE3 is qualified for lead-free reflow soldering with peak temperature up to 260 °C, per the manufacturer's soldering recommendations. The PowerPAK 1212-8S package is designed for standard Pb-free JEDEC J-STD-020 profiles, and the device carries "-GE3" suffix indicating lead (Pb)-free and halogen-free compliance.

SISS04DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50.5A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: +16V, -12V

Input Capacitance (Ciss) (Max) @ Vds:: 4460 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS04DN-T1-GE3 FAQ

1.How can I place an order for SISS04DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS04DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS04DN-T1-GE3 reliable?

The price and inventory of SISS04DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS04DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS04DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS04DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS04DN-T1-GE3?

SISS04DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS04DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS04DN-T1-GE3?

For technical support, including SISS04DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS04DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS04DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS04DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS04DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS04DN-T1-GE3?

All SISS04DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS04DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS04DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS04DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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