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Vishay Siliconix SISS22DN-T1-GE3
- Part No.:
- SISS22DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SISS22DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 60V 25A/90.6A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,125
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Product details
Overview
SISS22DN-T1-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8S package, delivering RDS(on) = 4.0 mΩ @ VGS = 10 V, Qg = 22.5 nC (typ.), and 90.6 A continuous drain current at TC = 25 °C - optimized for high-efficiency synchronous rectification and DC/DC converter primary-side switching.
For engineers reviewing the SISS22DN-T1-GE3 datasheet, SISS22DN-T1-GE3 pinout, SISS22DN-T1-GE3 application, or SISS22DN-T1-GE3 equivalent, key selection criteria include its low RDS(on)–Qoss figure-of-merit, 100% Rg and UIS testing, and thermal resistance RthJC = 1.5 °C/W (typ.) - critical for thermally constrained industrial and solar microinverter designs.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology with tuned gate charge distribution to minimize both RDS(on)–Qg and RDS(on)–Qoss FOMs. Its 60 V VDS rating and ±20 V VGS range support robust operation in 48 V bus systems and hard-switched topologies.
The device features a fully rated body diode with trr = 42 ns (typ.) and Qrr = 42 nC (typ.) at TJ = 25 °C, enabling efficient reverse recovery in synchronous rectifier configurations. Its leadless PowerPAK 1212-8S package provides low-inductance source connections and exposed-drain thermal path for enhanced power density.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports 48 V nominal input systems with 20 % margin for transients and ringing. |
| RDS(on) max @ VGS = 10 V | 4.0 mΩ - enables <1.5 W conduction loss at 60 A, critical for high-current DC/DC stages. |
| Qg typ. | 22.5 nC - reduces gate drive power and switching losses in 100–500 kHz SMPS designs. |
| ID continuous @ TC = 25 °C | 90.6 A - allows single-device implementation in high-power motor drive and battery switch applications. |
| RthJC max | 1.9 °C/W - ensures junction temperature rise stays below 120 °C under 65.7 W dissipation with minimal heatsinking. |
| VGS(th) | 2.0–3.6 V - compatible with standard 3.3 V and 5 V gate drivers without level-shifting. |
| Ciss typ. | 1870 pF - balances switching speed and EMI control in hard-switched converters. |
Pinout & Package
PowerPAK® 1212-8S is a surface-mount, leadless, 3.3 mm × 3.3 mm package with exposed drain pad on bottom side. Thermal performance relies on PCB copper area under the drain pad; solder fillet at exposed copper tip is not required per Vishay specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Low-inductance parallel source terminals - reduce common-source inductance in high-dI/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Exposed drain pad (pins 5–8 are electrically connected to bottom copper) - primary thermal path to PCB. |
| G (top-side pad) | Gate (G) | Single top-side gate terminal - enables compact gate loop layout and minimizes Miller capacitance coupling. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers industry-leading RDS(on)–Qoss FOM for reduced switching + conduction loss trade-off in high-frequency converters. |
| 100 % Rg tested | Ensures consistent gate drive timing and predictable turn-on/turn-off behavior across production lots. |
| 100 % UIS tested | Guarantees ruggedness against voltage overshoot and avalanche energy stress during transient events. |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709E requirements for environmentally compliant manufacturing. |
| Optimized for synchronous rectification | Low Qrr (42 nC typ.) and fast trr (42 ns typ.) minimize body diode conduction loss and reverse recovery spikes. |
Applications
| Synchronous Rectifier | Primary-Side Switch |
|---|---|
|
Use Scenario: Secondary-side switching in isolated LLC resonant and phase-shifted full-bridge DC/DC converters for server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce forward voltage drop and improve efficiency at 12 V output. Use Value: Achieves >0.5 % system efficiency gain over 40 A load due to 0.77 V typical VSD and low RDS(on). |
Use Scenario: High-side switching in non-isolated buck converters for telecom base station power modules. IC Role / Device Role / Timing Role: Main power switch operating at 300 kHz with 48 V input and 5 V/60 A output. Use Value: Enables <1.2 W total switching loss (Qg × fsw × VGS) and <1.4 W conduction loss at full load. |
| Solar Microinverter | Motor Drive Half-Bridge |
|
Use Scenario: DC link switching in single-phase transformerless solar microinverters with 600 V PV string input. IC Role / Device Role / Timing Role: Low-side switch in H-bridge inverter stage handling bidirectional current up to 30 A RMS. Use Value: Supports >98.2 % peak efficiency via low Qoss (34.2 nC typ.) and fast tf (6 ns typ.) minimizing dead-time losses. |
Use Scenario: Phase-leg switch in 24 V BLDC motor drives for industrial automation actuators. IC Role / Device Role / Timing Role: High-current, low-RDS(on) half-bridge leg supporting 90 A peak phase current. Use Value: Delivers <0.8 K/W thermal resistance to PCB, limiting ΔTJ to <75 °C at 72.5 A continuous (TC = 70 °C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 4.5 mΩ @ 10 V; Qg = 25.5 nC; PowerPAK SO-8 package (larger footprint, higher RthJA). | Higher RthJA (40 °C/W vs. 25 °C/W) limits power density in space-constrained microinverters. | Preferred where legacy SO-8 layout compatibility is required and thermal headroom exists. |
| DMTH6005LPSQ-13 | RDS(on) = 4.2 mΩ @ 10 V; Qg = 27.5 nC; PowerDI 5060 package with integrated Schottky diode. | Integrated diode adds ~0.2 V forward drop - unsuitable for synchronous rectification but simplifies flyback snubber design. | Selected when body diode replacement or simplified layout outweighs efficiency penalty in low-frequency flyback. |
Compared with IRLHS6342TRPBF and DMTH6005LPSQ-13, SISS22DN-T1-GE3 offers the lowest RDS(on)–Qoss FOM and smallest footprint, making it optimal for high-frequency, high-density applications like solar microinverters and server VRMs where thermal and space constraints dominate.
Availability
SISS22DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and motor drive applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and renewable energy programs.
Supply support for SISS22DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SISS22DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in data center, solar, and industrial motor control systems.
FAQ
What is the maximum continuous drain current rating for SISS22DN-T1-GE3 at 70 °C case temperature?
The SISS22DN-T1-GE3 supports 72.5 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8S package and must be validated against actual board-level thermal design using RthJC = 1.5 °C/W (typ.). The SISS22DN-T1-GE3 datasheet confirms this value under steady-state conditions with proper PCB copper area.
Does SISS22DN-T1-GE3 have a guaranteed avalanche rating?
Yes, the SISS22DN-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS), with a single-pulse avalanche current IAS = 25 A and energy EAS = 31.2 mJ. This rating is measured under standardized test conditions (L = 0.1 mH) and ensures robustness against inductive turn-off transients in motor drive and converter applications. The SISS22DN-T1-GE3 specification sheet explicitly lists these values in the Absolute Maximum Ratings section.
What is the gate threshold voltage range for SISS22DN-T1-GE3, and how does it affect drive compatibility?
The SISS22DN-T1-GE3 has a gate-source threshold voltage VGS(th) ranging from 2.0 V to 3.6 V at ID = 250 μA. This range ensures reliable turn-on with standard 3.3 V and 5 V logic-level gate drivers without requiring external level shifters. The SISS22DN-T1-GE3 also exhibits a negative VGS(th) temperature coefficient (−7.7 mV/°C), improving thermal stability during high-temperature operation.
How does the PowerPAK 1212-8S package of SISS22DN-T1-GE3 differ from traditional SO-8 in thermal performance?
The PowerPAK 1212-8S package of SISS22DN-T1-GE3 delivers RthJC = 1.5 °C/W (typ.), significantly lower than SO-8 packages (typically >3.0 °C/W), due to its exposed-drain thermal path directly to the PCB. Its 3.3 mm × 3.3 mm footprint also saves >50 % board area versus SO-8. The SISS22DN-T1-GE3 datasheet confirms this advantage in the Thermal Resistance Ratings table and Package Information document #63919.
Is SISS22DN-T1-GE3 suitable for synchronous rectification in 48 V input DC/DC converters?
Yes, the SISS22DN-T1-GE3 is explicitly recommended for synchronous rectification in its Applications section. With RDS(on) = 4.0 mΩ @ 10 V, VSD = 0.77 V (typ.) at IS = 5 A, and trr = 42 ns (typ.), it outperforms Schottky diodes in efficiency and thermal performance at 48 V input. The SISS22DN-T1-GE3 product summary and Application Note 826 validate its use in high-current, high-frequency secondary-side switching.
SISS22DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Ta), 90.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1870 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 65.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SISS22DN-T1-GE3 FAQ
1.How can I place an order for SISS22DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS22DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS22DN-T1-GE3 reliable?
The price and inventory of SISS22DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS22DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISS22DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS22DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS22DN-T1-GE3?
SISS22DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS22DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS22DN-T1-GE3?
For technical support, including SISS22DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS22DN-T1-GE3 requirements.
6.How does Aetrix verify that SISS22DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISS22DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS22DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISS22DN-T1-GE3?
All SISS22DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS22DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS22DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISS22DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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