Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS50DN-T1-GE3

Name: SISS50DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS50DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SISS50DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS50DN-T1-GE3.pdf

Description:: MOSFET N-CH 45V 29.7A/108A PPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:17,852

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SISS50DN-T1-GE3 from Vishay Siliconix is an N-channel 45 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® 1212-8S package, delivering R_DS(on) = 2.83 mΩ at V_GS = 10 V and 4.1 mΩ at V_GS = 4.5 V, with 108 A continuous drain current and optimized gate charge (Q_g = 21.4 nC typ. at 4.5 V) for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SISS50DN-T1-GE3 datasheet, SISS50DN-T1-GE3 pinout, SISS50DN-T1-GE3 application, or SISS50DN-T1-GE3 equivalent, this device is selected for low-loss switching in compact, thermally demanding power stages-especially where high current density, fast switching, and robust body diode recovery (t_rr = 32 ns typ.) are critical.

Technical Context

This MOSFET employs trench-based silicon architecture to achieve ultra-low on-resistance while maintaining tight control over Q_gd/Q_gs ratio (0.014–0.028) and dynamic parameters including C_iss = 4000 pF and C_oss = 630 pF at V_DS = 20 V. Its gate threshold voltage (V_GS(th) = 1.1–2.3 V) supports 4.5 V logic-level drive compatibility.

Thermally, it features R_thJC = 1.5 °C/W (typ.) and R_thJA = 20 °C/W (t ≤ 10 s), enabling high-power operation on minimal PCB copper. The leadless PowerPAK 1212-8S package integrates eight terminals: four parallel drain pads (pins 5–8), three parallel source pads (pins 1–3), and one gate pad (pin 4), with exposed copper thermal path on the bottom side.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	45 V - Maximum drain-source blocking voltage for 12 V and 24 V input DC/DC systems
R_DS(on) @ 10 V	2.83 mΩ max - Enables <1 W conduction loss at 60 A in high-current buck phases
R_DS(on) @ 4.5 V	4.1 mΩ max - Ensures full enhancement with standard 5 V microcontroller GPIO or PWM drivers
Q_g	21.4 nC typ. @ 4.5 V - Reduces gate drive power and switching transition time in high-frequency (>500 kHz) topologies
I_D (cont)	108 A @ T_C = 25 °C - Supports high-current single-phase power stages without paralleling
t_rr	32 ns typ. - Minimizes reverse recovery loss and EMI in synchronous rectifier operation
R_thJC	1.5 °C/W typ. - Allows direct thermal coupling to heatsink or copper plane for >65 W dissipation

Pinout & Package

Package: PowerPAK® 1212-8S - 3.3 mm × 3.3 mm leadless surface-mount package with exposed drain thermal pad on bottom side; no leads, no solder fillet required at terminal tips per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
4	Gate (G)	Single gate pad optimized for low-inductance gate loop layout; R_g = 0.5–2 Ω ensures stable turn-on/turn-off
5, 6, 7, 8	Drain (D)	Four parallel drain terminals provide low-impedance return path and enhance thermal conduction to PCB ground plane

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 30 % lower R_DS(on) vs. prior generation at same die size, enabling higher power density
Optimized Q_gd/Q_gs ratio	0.014–0.028 minimizes Miller-induced shoot-through risk during hard-switching transitions
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching events up to I_AS = 30 A and E_AS = 45 mJ
Low V_SD body diode	0.72 V typ. at I_S = 5 A reduces forward conduction loss during dead-time conduction
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912)

Applications

Synchronous Buck Converter	High-Density DC/DC Module
Use Scenario: Primary high-side or secondary low-side switch in 48 V–12 V or 12 V–3.3 V point-of-load converters operating at 300–1000 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to eliminate forward voltage drop and reduce thermal load. Use Value: Achieves >95 % efficiency at 60 A output by cutting conduction loss by 65 % versus 40 V Schottky alternatives.	Use Scenario: Integrated power stage in telecom or server VRMs where board space is constrained and thermal management is passive. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch enabling single-device 80–100 A phase legs without paralleling. Use Value: Reduces component count and layout complexity while maintaining junction temperature <125 °C under full load with 2-layer 2 oz copper.
Battery Protection Circuit	Load Switching in Portable Systems
Use Scenario: Reverse-polarity and overcurrent protection in 2-cell Li-ion battery packs (8.4 V max) for power tools or medical devices. IC Role / Device Role / Timing Role: Low-R_DS(on) back-to-back switch controlling bidirectional current flow with integrated body diode. Use Value: Limits voltage drop to <0.4 V at 30 A, preserving battery runtime and enabling accurate current sensing via shunt resistor.	Use Scenario: Hot-swap and inrush control for USB-C PD, SSDs, or FPGA I/O rails requiring fast, low-loss enable/disable. IC Role / Device Role / Timing Role: Single-N high-side load switch driven by 3.3 V or 5 V logic with controlled slew rate via gate resistor. Use Value: Delivers <10 μs turn-on delay and <12 ns fall time, minimizing supply rail droop during hot-plug events.

Synchronous Buck Converter

High-Density DC/DC Module

Use Scenario: Primary high-side or secondary low-side switch in 48 V–12 V or 12 V–3.3 V point-of-load converters operating at 300–1000 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to eliminate forward voltage drop and reduce thermal load.

Use Value: Achieves >95 % efficiency at 60 A output by cutting conduction loss by 65 % versus 40 V Schottky alternatives.

Use Scenario: Integrated power stage in telecom or server VRMs where board space is constrained and thermal management is passive.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch enabling single-device 80–100 A phase legs without paralleling.

Use Value: Reduces component count and layout complexity while maintaining junction temperature <125 °C under full load with 2-layer 2 oz copper.

Battery Protection Circuit

Load Switching in Portable Systems

Use Scenario: Reverse-polarity and overcurrent protection in 2-cell Li-ion battery packs (8.4 V max) for power tools or medical devices.

IC Role / Device Role / Timing Role: Low-R_DS(on) back-to-back switch controlling bidirectional current flow with integrated body diode.

Use Value: Limits voltage drop to <0.4 V at 30 A, preserving battery runtime and enabling accurate current sensing via shunt resistor.

Use Scenario: Hot-swap and inrush control for USB-C PD, SSDs, or FPGA I/O rails requiring fast, low-loss enable/disable.

IC Role / Device Role / Timing Role: Single-N high-side load switch driven by 3.3 V or 5 V logic with controlled slew rate via gate resistor.

Use Value: Delivers <10 μs turn-on delay and <12 ns fall time, minimizing supply rail droop during hot-plug events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 3.1 mΩ @ 4.5 V; Q_g = 25.5 nC; PowerPAK SO-8L package (same footprint but different thermal pad layout)	Higher R_DS(on) and gate charge increase conduction and switching losses by ~12 % at 50 A/500 kHz	Acceptable for lower-current (<40 A) or lower-frequency (<300 kHz) designs where thermal margin is ample
DMTH4007LPSQ-13	R_DS(on) = 3.4 mΩ @ 4.5 V; Q_g = 23.5 nC; PowerDI 5060 package with larger thermal pad (5.0 × 6.0 mm)	Lower current rating (70 A) and larger footprint limit use in space-constrained modules	Preferred when higher thermal mass is needed and board area permits larger outline

Compared with IRLHS6342TRPBF and DMTH4007LPSQ-13, SISS50DN-T1-GE3 offers the lowest R_DS(on) and best Q_g/R_DS(on) figure of merit in its 3.3 mm × 3.3 mm class, making it optimal for high-efficiency, high-power-density synchronous rectifiers where thermal resistance and switching speed are limiting factors.

Availability

SISS50DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous buck converters, high-density DC/DC modules, and battery protection circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SISS50DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SISS50DN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, high-frequency DC/DC conversion in computing, telecom, and industrial power supplies where low R_DS(on), fast switching, and ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for SISS50DN-T1-GE3 at 70 °C case temperature?

The SISS50DN-T1-GE3 supports 86 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8S package and ensures safe operation under sustained high-power conditions without exceeding the 150 °C maximum junction temperature. Engineers must verify PCB copper area and airflow to maintain T_C ≤ 70 °C in final layout.

Does SISS50DN-T1-GE3 have a specified body diode reverse recovery time (t_rr)?

Yes, SISS50DN-T1-GE3 specifies t_rr = 32 ns typical at I_F = 15 A, dI/dt = 100 A/μs, and T_J = 25 °C. This fast recovery characteristic is critical for minimizing switching loss and voltage overshoot in synchronous rectifier applications. The body diode also exhibits Q_rr = 24 nC typical, supporting efficient zero-voltage switching (ZVS) design techniques.

Is SISS50DN-T1-GE3 compatible with standard reflow soldering profiles?

Yes, SISS50DN-T1-GE3 is qualified for standard lead-free reflow per IPC/JEDEC J-STD-020, with peak temperature up to 260 °C. Vishay explicitly states compliance in the datasheet (S19-0700-Rev. A). However, manual soldering with an iron is not recommended due to its leadless PowerPAK 1212-8S construction and thermal sensitivity-reflow is the only supported assembly method.

What is the gate-source leakage current (I_GSS) specification for SISS50DN-T1-GE3?

The SISS50DN-T1-GE3 specifies gate-source leakage current I_GSS ≤ ±100 nA at V_GS = +20 V or –16 V and T_J = 25 °C. This low leakage ensures stable gate bias in high-impedance drive circuits and prevents unintended turn-on during standby or fault conditions, contributing to system-level reliability in always-on power architectures.

Can SISS50DN-T1-GE3 be used in linear mode (Ohmic region) applications?

No-SISS50DN-T1-GE3 is not characterized or rated for linear-mode operation. Its Safe Operating Area (SOA) curve shows pulse-limited capability only (e.g., 100 μs pulses), and the datasheet does not specify SOA in DC or longer pulse conditions. For linear regulation or electronic fuse applications, Vishay recommends dedicated linear MOSFETs such as the SiHF series with guaranteed SOA data.

SISS50DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 45 V

Current - Continuous Drain (Id) @ 25°C:: 29.7A (Ta), 108A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.83mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 4000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS50DN-T1-GE3 FAQ

1.How can I place an order for SISS50DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS50DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS50DN-T1-GE3 reliable?

The price and inventory of SISS50DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS50DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS50DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS50DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS50DN-T1-GE3?

SISS50DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS50DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS50DN-T1-GE3?

For technical support, including SISS50DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS50DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS50DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS50DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS50DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS50DN-T1-GE3?

All SISS50DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS50DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS50DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS50DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…