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Vishay Siliconix SISS71DN-T1-GE3
- Part No.:
- SISS71DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8S
- Datasheet:
-
SISS71DN-T1-GE3.pdf
- Description:
- MOSFET P-CH 100V 23A PPAK1212-8S
- Quantity:
- Payment:
- Shipping:
Inventory:2,805
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Product details
Overview
SiSS71DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET rated for -100 V drain-source voltage, with RDS(on) of 0.059 Ω at VGS = -10 V and 0.082 Ω at VGS = -4.5 V, delivering -23 A continuous drain current at TC = 25 °C in a PowerPAK® 1212-8S package - used in active clamp circuits and high-efficiency DC/DC converters.
For engineers reviewing the SiSS71DN-T1-GE3 datasheet, SiSS71DN-T1-GE3 pinout, SiSS71DN-T1-GE3 application, or SiSS71DN-T1-GE3 equivalent, this device supports high-density power stage design where low gate charge (20 nC typ.), fast switching (td(off) ≤ 50 ns), and robust avalanche energy rating (31 mJ) are critical for PoE injectors and motor drive control stages.
Technical Context
This P-channel MOSFET operates in enhancement mode with a gate-source threshold voltage range of -1.5 V to -2.5 V and exhibits negative temperature coefficient for VDS breakdown (-56 mV/°C). Its dynamic characteristics include Ciss = 1050 pF, Coss = 330 pF, and Crss = 20 pF at VDS = -50 V, enabling predictable hard-switching behavior in synchronous buck and active clamp forward topologies.
The device integrates a body diode with VSD = -0.83 V at IF = -5 A and trr = 65 ns (typ.), supporting bidirectional conduction in battery management systems and load switch applications requiring controlled reverse recovery.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - supports input rails up to 80 V in isolated DC/DC designs with margin for transient spikes |
| RDS(on) @ VGS = -10 V | 0.059 Ω max - enables <1.5 W conduction loss at -20 A, suitable for high-current load switches |
| RDS(on) @ VGS = -4.5 V | 0.082 Ω max - ensures reliable turn-on with standard logic-level gate drivers in PoE PD circuits |
| Qg | 20 nC typ. - reduces gate drive power and enables >1 MHz switching in compact SMPS designs |
| EAS | 31 mJ - withstands single-pulse inductive energy without failure in motor drive flyback protection |
| RthJC | 1.7 °C/W typ. - allows >50 W power dissipation with minimal heatsink in thermally constrained modules |
| ID (TC = 25 °C) | -23 A - supports high-side switching in 48 V industrial power distribution with derating |
Pinout & Package
SiSS71DN-T1-GE3 uses the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm × 0.75 mm), optimized for low thermal resistance and high power density on FR4 PCBs. The exposed copper drain paddle enhances heat transfer to the board's inner layers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal parallel die; requires low-inductance ground plane routing |
| 5, 6, 7, 8 | Drain (D) | Exposed copper paddle - must be soldered to large thermal pad for RthJC performance |
| G (between pins 1 & 2) | Gate (G) | Single gate terminal; layout must minimize trace inductance to suppress ringing during fast turn-off |
Key Features
| Feature | Design Value |
|---|---|
| ThunderFET® technology | Optimized cell structure delivers 15 % lower RDS(on) × Qg figure-of-merit vs. prior-gen P-channel MOSFETs |
| 100 % Rg and UIS tested | Ensures gate resistance consistency (<11.4 Ω max) and ruggedness against unclamped inductive switching stress |
| PowerPAK® 1212-8S package | 0.75 mm profile enables ultra-thin power modules; no leads reduce parasitic inductance in high-dI/dt paths |
| Body diode trr = 65 ns (typ.) | Enables efficient synchronous rectification in active clamp forward converters without external Schottky |
| Pb-free and halogen-free | Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile for lead-free assembly |
Applications
| Active Clamp Forward Converter | 48 V PoE Power Sourcing Equipment (PSE) |
|---|---|
Use Scenario: High-efficiency isolated DC/DC conversion in telecom base station power supplies using active clamp topology to recycle leakage energy. IC Role / Device Role / Timing Role: High-side P-channel clamp switch synchronized with primary-side PWM to reset transformer flux and limit voltage overshoot. Use Value: Low RDS(on) and fast td(off) (≤50 ns) minimize clamp loss and enable >94 % efficiency at 100 kHz switching frequency. | Use Scenario: Primary-side high-voltage switch in IEEE 802.3bt Type 4 PoE injectors delivering up to 90 W over Cat6a cabling. IC Role / Device Role / Timing Role: P-channel MOSFET controlling power delivery initiation and fault isolation during signature detection and classification phases. Use Value: -100 V VDS rating and -23 A ID support 100 V open-circuit testing and 600 mA sustained current with margin. |
| Battery Protection Circuit | Industrial Motor Drive Half-Bridge |
Use Scenario: Reverse polarity and overcurrent protection in 24–48 V lithium-ion battery packs for material handling equipment. IC Role / Device Role / Timing Role: High-side load switch placed between battery terminal and system bus to interrupt fault currents within microseconds. Use Value: Robust avalanche capability (31 mJ) safely clamps inductive kickback from solenoid loads during emergency shutdown. | Use Scenario: Upper-leg switch in 24 V BLDC motor drives for HVAC actuators and robotic joints requiring precise torque control. IC Role / Device Role / Timing Role: P-channel high-side driver in half-bridge configuration, eliminating need for bootstrap circuitry in low-duty-cycle operation. Use Value: Logic-level VGS(th) (-1.5 to -2.5 V) ensures full enhancement with 3.3 V microcontroller GPIO, simplifying gate drive design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | TO-220 package, higher RDS(on) (0.2 Ω), slower Qg (60 nC), larger footprint | Suitable for prototyping and low-frequency linear regulation; not viable for high-density SMPS | Select when thermal mass > speed is prioritized and board space permits through-hole mounting |
| DMTH10H025LWQ-13 | Same PowerPAK 1212-8S package, lower VDS (-100 V same), but RDS(on) = 0.025 Ω at -10 V and higher Qg (36 nC) | Better conduction loss but higher gate drive demand; may require stronger driver in >500 kHz designs | Select when minimizing conduction loss dominates over switching loss in <300 kHz applications |
Compared with IRF9530NPBF and DMTH10H025LWQ-13, SiSS71DN-T1-GE3 offers optimal balance of low RDS(on), moderate Qg, and compact footprint - making it preferred for space-constrained PoE and active clamp converters where thermal and layout constraints are tight.
Availability
SiSS71DN-T1-GE3 is available at Aetrix Electronics and suitable for active clamp forward converters, 48 V PoE power sourcing equipment, and industrial motor drive half-bridges requiring stable component supply across production lifecycles.
Supply support for SiSS71DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The ThunderFET® product line targets high-frequency, high-density power conversion applications - engineered specifically for reduced conduction and switching losses in modern DC/DC, PoE, and motor control systems.
FAQ
What is the maximum continuous drain current rating for SiSS71DN-T1-GE3 at case temperature of 70 °C?
SiSS71DN-T1-GE3 supports -18.5 A continuous drain current at TC = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® 1212-8S package under steady-state conduction. Designers must verify PCB copper area and airflow to maintain case temperature below 70 °C when operating near this limit. SiSS71DN-T1-GE3 maintains safe operation only if junction temperature remains ≤150 °C.
Does SiSS71DN-T1-GE3 have integrated ESD protection on the gate terminal?
SiSS71DN-T1-GE3 does not specify integrated gate ESD protection in its datasheet; gate-source leakage (±100 nA) and absolute maximum VGS (±20 V) indicate standard MOSFET gate oxide sensitivity. External TVS or series resistance is recommended in high-noise environments. The device undergoes 100 % Rg testing but no ESD qualification data is published. SiSS71DN-T1-GE3 should be handled per J-STD-020 MSL3 guidelines.
Can SiSS71DN-T1-GE3 be used in synchronous rectification configurations?
SiSS71DN-T1-GE3 is not optimized for synchronous rectification due to its P-channel architecture and body diode VSD (-0.83 V typ.), which is higher than typical N-channel Schottky alternatives. While its trr (65 ns) supports moderate-frequency freewheeling, conduction loss exceeds dedicated SR controllers. SiSS71DN-T1-GE3 is best applied as a controlled switch - not as a rectifier - in active clamp or high-side load switch roles.
What is the recommended solder profile for SiSS71DN-T1-GE3's PowerPAK® 1212-8S package?
The recommended peak solder temperature for SiSS71DN-T1-GE3 is 260 °C, per Vishay document 73257. Reflow must follow JEDEC J-STD-020 moisture sensitivity level (MSL) 3 requirements, with floor life limited to 168 hours at ≤30 °C/60 % RH unless dry-packed. Manual soldering is not recommended due to the leadless construction and exposed copper drain paddle. SiSS71DN-T1-GE3 requires controlled thermal ramp rates to prevent voiding in the thermal pad.
How does the gate resistance specification of SiSS71DN-T1-GE3 impact switching performance?
SiSS71DN-T1-GE3 specifies gate resistance Rg from 1.1 Ω (typ.) to 11.4 Ω (max) at 1 MHz, directly influencing turn-on/turn-off timing and gate driver selection. At Rg = 11.4 Ω and Qg = 30 nC (max), gate drive power increases by ~30 % versus typical values - requiring ≥1 A peak current capability from the driver. SiSS71DN-T1-GE3 benefits from low-Rg layout practices to avoid oscillation and ensure consistent td(on)/td(off).
SISS71DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- ThunderFET®
- Package/Case:
- PowerPAK® 1212-8S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 59mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1050 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8S
SISS71DN-T1-GE3 FAQ
1.How can I place an order for SISS71DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SISS71DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SISS71DN-T1-GE3 reliable?
The price and inventory of SISS71DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS71DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SISS71DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS71DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SISS71DN-T1-GE3?
SISS71DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SISS71DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SISS71DN-T1-GE3?
For technical support, including SISS71DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS71DN-T1-GE3 requirements.
6.How does Aetrix verify that SISS71DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SISS71DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS71DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SISS71DN-T1-GE3?
All SISS71DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS71DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SISS71DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SISS71DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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