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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SISS92DN-T1-GE3

Name: SISS92DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS92DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SISS92DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8S

Datasheet:: SISS92DN-T1-GE3.pdf

Description:: MOSFET N-CH 250V 3.4A/12.3A PPAK

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Product details

Overview

SiSS92DN-T1-GE3 from Vishay Siliconix is an N-channel 250 V (D-S) TrenchFET® Power MOSFET with ThunderFET® technology, optimized for high-voltage primary-side switching and synchronous rectification. It delivers R_DS(on) = 0.173 Ω at V_GS = 10 V, Q_g = 8.1 nC, and 12.3 A continuous drain current at T_C = 25 °C in a PowerPAK® 1212-8S package.

For engineers reviewing the SiSS92DN-T1-GE3 datasheet, SiSS92DN-T1-GE3 pinout, SiSS92DN-T1-GE3 application, or SiSS92DN-T1-GE3 equivalent, key selection criteria include its leadership R_DS(on)/Q_oss figure-of-merit, 100% R_g and UIS testing, and suitability for compact DC/DC converters requiring stable 250 V switching capability.

Technical Context

This MOSFET employs trench-gate architecture with ThunderFET process enhancements to simultaneously reduce conduction loss (R_DS(on)), gate charge (Q_g), and output charge (Q_oss). Its 250 V V_DS rating and 12.3 A I_D support operation in flyback, LLC, and active clamp forward topologies where voltage overshoot and switching losses are critical.

The device features a robust body diode with t_rr = 98 ns and Q_rr = 325 nC, enabling efficient synchronous rectification without external Schottky replacement. Thermal resistance R_thJC = 1.5 °C/W ensures effective heat transfer to PCB copper in surface-mount applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - Withstands peak drain-source voltages up to 250 V in primary-side switch applications without avalanche breakdown.
R_DS(on) max @ V_GS = 10 V	0.173 Ω - Enables low conduction loss at full load in 12–24 W AC/DC adapters and industrial power supplies.
Q_g typ.	8.1 nC - Reduces gate drive power and enables fast turn-on with standard 5–12 V controllers in high-frequency (>100 kHz) SMPS.
I_D continuous @ T_C = 25 °C	12.3 A - Supports sustained current delivery in thermally managed layouts using 1" × 1" FR4 board copper area.
R_thJC max	1.9 °C/W - Allows direct thermal coupling to heatsink or large copper pour for junction temperature control below 150 °C.
V_GS(th)	2–4 V - Ensures reliable enhancement-mode turn-on with standard PWM controller gate drivers without level-shifting.
Q_oss typ.	19.7 pC - Minimizes energy loss during hard-switching transitions in resonant and quasi-resonant converters.

Pinout & Package

SiSS92DN-T1-GE3 uses the leadless PowerPAK® 1212-8S package (3.3 mm × 3.3 mm footprint, 0.75 mm nominal height), with exposed drain copper on the bottom side for thermal and electrical connection. The top-side terminals are arranged in dual-row configuration with Gate (G), Source (S), and Drain (D) distributed across eight terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source connections reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals provide low-inductance path to PCB ground plane and enable efficient thermal conduction to copper.
G (pin not numbered - top-side center pad)	Gate (G)	Single gate terminal located centrally on top surface; requires controlled trace routing to minimize ringing and EMI.

Key Features

Feature	Design Value
TrenchFET® with ThunderFET® technology	Optimizes trade-off between R_DS(on), Q_g, Q_sw, and Q_oss - achieves 0.140 Ω typical R_DS(on) and 8.1 nC Q_g simultaneously.
Leadership R_DS(on)/C_oss FOM	Enables >95% efficiency in 250 V-class flyback converters operating at 100–300 kHz with minimal snubber loss.
100% R_g and UIS tested	Guarantees gate robustness against transient overvoltage and single-pulse avalanche energy of 5 mJ under real-world surge conditions.
PowerPAK® 1212-8S package	Provides 2× lower R_thJA vs. SO-8 and eliminates wirebond inductance - supports >10 A continuous current in space-constrained designs.

Applications

Primary Side Switching	Synchronous Rectification
Use Scenario: High-voltage switch in offline flyback or active-clamp forward converters delivering 15–30 W. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary winding; operates at 65–200 kHz. Use Value: 250 V V_DS rating and 0.173 Ω R_DS(on) ensure margin against reflected transients and low conduction loss at full load.	Use Scenario: Secondary-side rectifier in isolated DC/DC modules for telecom and server PSUs. IC Role / Device Role / Timing Role: Synchronously gated replacement for Schottky diode; driven by transformer-coupled or controller-based timing signal. Use Value: Low Q_rr (325 nC) and fast t_rr (98 ns) minimize reverse recovery loss and EMI during zero-voltage switching transitions.
DC/DC Topologies	Industrial Load Switch
Use Scenario: High-efficiency buck-derived isolated regulators in programmable logic controllers and motor drives. IC Role / Device Role / Timing Role: High-side switch in half-bridge or asymmetrical half-bridge configurations; handles 200 V bus with 12.3 A peak current. Use Value: 1.5 °C/W R_thJC allows direct mounting to metal-core PCBs, sustaining >90% efficiency at 10 A output without external heatsink.	Use Scenario: Hot-swap and inrush-current-limited 24 V/48 V industrial power distribution node. IC Role / Device Role / Timing Role: Single-pole, high-side load switch with integrated gate driver interface and overcurrent protection coordination. Use Value: 250 V blocking capability and 12.3 A continuous rating support robust fault clearing and long-term reliability in 24 V rail systems with high capacitive loads.

Primary Side Switching

Synchronous Rectification

Use Scenario: High-voltage switch in offline flyback or active-clamp forward converters delivering 15–30 W.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary winding; operates at 65–200 kHz.

Use Value: 250 V V_DS rating and 0.173 Ω R_DS(on) ensure margin against reflected transients and low conduction loss at full load.

Use Scenario: Secondary-side rectifier in isolated DC/DC modules for telecom and server PSUs.

IC Role / Device Role / Timing Role: Synchronously gated replacement for Schottky diode; driven by transformer-coupled or controller-based timing signal.

Use Value: Low Q_rr (325 nC) and fast t_rr (98 ns) minimize reverse recovery loss and EMI during zero-voltage switching transitions.

DC/DC Topologies

Industrial Load Switch

Use Scenario: High-efficiency buck-derived isolated regulators in programmable logic controllers and motor drives.

IC Role / Device Role / Timing Role: High-side switch in half-bridge or asymmetrical half-bridge configurations; handles 200 V bus with 12.3 A peak current.

Use Value: 1.5 °C/W R_thJC allows direct mounting to metal-core PCBs, sustaining >90% efficiency at 10 A output without external heatsink.

Use Scenario: Hot-swap and inrush-current-limited 24 V/48 V industrial power distribution node.

IC Role / Device Role / Timing Role: Single-pole, high-side load switch with integrated gate driver interface and overcurrent protection coordination.

Use Value: 250 V blocking capability and 12.3 A continuous rating support robust fault clearing and long-term reliability in 24 V rail systems with high capacitive loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHP12N50C	500 V V_DS, 0.55 Ω R_DS(on) @ 10 V, TO-220 package, higher R_thJA (62 °C/W)	Better voltage margin but significantly higher conduction loss and larger footprint; suited for lower-frequency, higher-power designs.	Choose SiHP12N50C only when >300 V blocking is required and board space permits TO-220 mounting.
IPD95R1K2P7	950 V V_DS, 1.2 Ω R_DS(on), TO-252, 100 V higher V_GS rating, no Q_oss spec provided	Designed for ultra-high-voltage PFC stages; lacks Q_oss and body diode data needed for synchronous rectification.	Select IPD95R1K2P7 for boost PFC input stages, not for 250 V switching or SR roles where SiSS92DN-T1-GE3's low Q_oss and Q_rr are critical.

Compared with SiHP12N50C and IPD95R1K2P7, SiSS92DN-T1-GE3 offers superior R_DS(on)/Q_oss balance and thermal performance in the 250 V class, making it optimal for compact, high-frequency, high-efficiency DC/DC and adapter designs where size and switching loss dominate.

Availability

SiSS92DN-T1-GE3 is available at Aetrix Electronics and suitable for primary-side switching, synchronous rectification, and industrial load switch applications requiring stable component supply, consistent lead-free/halogen-free compliance, and verified production continuity.

Supply support for SiSS92DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SiSS92DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-density, high-efficiency power conversion in space-constrained industrial, computing, and lighting systems.

FAQ

What is the maximum continuous drain current rating for SiSS92DN-T1-GE3 at 70 °C case temperature?

The SiSS92DN-T1-GE3 supports 9.9 A continuous drain current at T_C = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® 1212-8S package and must be validated against actual PCB layout, copper area, and airflow. The SiSS92DN-T1-GE3 maintains R_DS(on) stability across this range due to its positive temperature coefficient.

Does SiSS92DN-T1-GE3 have avalanche capability, and what is its rated single-pulse energy?

Yes, SiSS92DN-T1-GE3 is 100% tested for Unclamped Inductive Switching (UIS) and rated for 5 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH. This capability ensures robustness during transient overvoltage events in flyback and forward converters. The SiSS92DN-T1-GE3 also supports 10 A single-pulse avalanche current (I_AS).

What is the gate threshold voltage range for SiSS92DN-T1-GE3, and how does it affect drive compatibility?

The SiSS92DN-T1-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2–4 V at I_D = 250 μA, ensuring reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers. Its negative V_GS(th) temperature coefficient (−7.2 mV/°C) provides inherent current limiting at elevated temperatures. This behavior enhances system safety without external circuitry in the SiSS92DN-T1-GE3 design.

Can SiSS92DN-T1-GE3 be used in synchronous rectification, and what body diode parameters support that use?

Yes, SiSS92DN-T1-GE3 is qualified for synchronous rectification, supported by its specified body diode characteristics: V_SD = 0.79 V (typ.) at I_S = 2.9 A, t_rr = 98 ns (typ.), and Q_rr = 325 nC (typ.). These values enable low-loss commutation and reduced EMI compared to Schottky diodes in 12–24 V output rails. The SiSS92DN-T1-GE3 body diode is integral to its function in SR applications.

What is the thermal resistance from junction to case (R_thJC) for SiSS92DN-T1-GE3, and how is it measured?

The SiSS92DN-T1-GE3 has a typical junction-to-case thermal resistance (R_thJC) of 1.5 °C/W, with a maximum of 1.9 °C/W, measured under steady-state conditions with the drain soldered to a large copper area. This value applies to heat flow from die to exposed drain copper in the PowerPAK® 1212-8S package. Accurate thermal modeling of the SiSS92DN-T1-GE3 requires using this R_thJC in conjunction with PCB copper thermal spreading resistance.

SISS92DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8S

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 3.4A (Ta), 12.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 173mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 125 V

FET Feature:: -

Power Dissipation (Max):: 5.1W (Ta), 65.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8S

SISS92DN-T1-GE3 FAQ

1.How can I place an order for SISS92DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SISS92DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SISS92DN-T1-GE3 reliable?

The price and inventory of SISS92DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SISS92DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SISS92DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SISS92DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SISS92DN-T1-GE3?

SISS92DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SISS92DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SISS92DN-T1-GE3?

For technical support, including SISS92DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SISS92DN-T1-GE3 requirements.

6.How does Aetrix verify that SISS92DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SISS92DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SISS92DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SISS92DN-T1-GE3?

All SISS92DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SISS92DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SISS92DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SISS92DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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