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Infineon Technologies SPD04N80C3ATMA1
- Part No.:
- SPD04N80C3ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SPD04N80C3ATMA1.pdf
- Description:
- MOSFET N-CH 800V 4A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:10,800
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Product details
Overview
SPD04N80C3ATMA1 from Infineon Technologies is an 800 V, 4 A N-channel CoolMOS™ C3 power MOSFET in PG-TO252-3 (DPAK) package, featuring 1.3 Ω RDS(on) at 25 °C, 23 nC typical gate charge, and 170 mJ single-pulse avalanche energy-designed for high-voltage industrial switch-mode power supplies including active-clamp forward converters.
For engineers reviewing the SPD04N80C3ATMA1 datasheet, SPD04N80C3ATMA1 pinout, SPD04N80C3ATMA1 application, or SPD04N80C3ATMA1 equivalent, key selection criteria include its 800 V V(BR)DSS, ultra-low Coss (25 pF), dv/dt ruggedness up to 4 V/ns, and JEDEC industrial qualification supporting stable operation under high DC bus conditions.
Technical Context
This device implements Infineon's CoolMOS™ C3 superjunction technology optimized for hard-switched industrial SMPS topologies. It delivers low conduction loss via 1.1 Ω RDS(on) @ 150 °C and reduced switching loss through 19 pF effective output capacitance (Co(er)) and 51 pF time-related Co(tr).
The integrated body diode supports reverse recovery with trr = 520 ns and Qrr = 4 µC at 400 V, enabling robust performance in clamped flyback and resonant configurations where diode commutation stress is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 800 V - Withstands 800 V drain-source breakdown voltage, enabling use in 400 V AC input systems with 2× safety margin. |
| RDS(on) max @ 25 °C | 1.3 Ω - Low on-resistance reduces conduction losses in continuous 4 A load applications. |
| Qg typ | 23 nC - Enables efficient gate drive with moderate 10 V plateau voltage, reducing driver power demand. |
| Coss | 25 pF - Minimizes capacitive turn-off loss and improves efficiency in high-frequency switching above 100 kHz. |
| EAS | 170 mJ - Supports reliable single-pulse avalanche operation during transient overvoltage events in unclamped inductive loads. |
| dv/dt ruggedness | 4 V/ns - Ensures immunity to false triggering during fast voltage transients in high-noise industrial environments. |
| Tj range | –55 to 150 °C - Rated for extended thermal operation in enclosed industrial enclosures without forced cooling. |
Pinout & Package
Package: PG-TO252-3 (DPAK), surface-mount, thermally enhanced with exposed drain pad for PCB heat sinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal of N-channel MOSFET | Low-side reference node; connects to ground or current-sense resistor for accurate RDS(on)-based sensing. |
| Pin 2 (Gate) | Control electrode | Receives 10 V logic-level drive; requires <1.2 Ω gate resistance to control 23 nC charge and suppress ringing. |
| Pin 3 (Drain) | High-voltage power terminal | Exposed copper pad on bottom side; must be connected to large PCB copper area (≥6 cm²) for thermal management per RthJC = 2 K/W. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate charge | 23 nC total gate charge enables fast, low-loss switching with standard gate drivers (e.g., 1EDN7512B). |
| JEDEC industrial qualification | Fully qualified per JESD47/22, supporting 15-year field reliability in industrial motor drives and UPS systems. |
| Pb-free & halogen-free | RoHS-compliant lead plating and mold compound meet IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1). |
| High peak current capability | 12 A pulsed drain current rating allows short-term overload handling during startup or fault conditions. |
| Enhanced dv/dt ruggedness | Rated for 4 V/ns, exceeding standard MOSFETs by >2×, preventing spurious turn-on in high-dV/dt gate loops. |
Applications
| Industrial SMPS | Active-Clamp Forward Converter |
|---|---|
Use Scenario: 400 V AC-input, 24 V/100 W industrial power supply operating at 150 kHz. IC Role / Device Role / Timing Role: Primary-side high-voltage switching transistor in hard-switched topology. Use Value: 1.3 Ω RDS(on) and 25 pF Coss reduce combined conduction and switching losses to <1.2 W at full load. | Use Scenario: Telecom rectifier with 380 V DC bus and active clamp reset circuit. IC Role / Device Role / Timing Role: Main switch handling 800 V blocking and 4 A average current with zero-voltage switching assist. Use Value: 170 mJ EAS ensures safe clamp energy absorption during transient overvoltage events. |
| Uninterruptible Power Supply | Motor Drive Inverter Stage |
Use Scenario: Online UPS with bidirectional DC-link and battery backup stage. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration managing 400–600 V DC-link voltage. Use Value: 4 V/ns dv/dt rating prevents false triggering during rapid bus voltage transitions during transfer switching. | Use Scenario: 3-phase BLDC inverter for HVAC compressors rated at 2 kW. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter leg. Use Value: Integrated body diode with 520 ns trr and 12 A Irrm supports freewheeling with minimal tail current loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK80ZFP | 800 V, 4 A, RDS(on) = 1.5 Ω, Qg = 32 nC, Coss = 35 pF | Higher gate charge and output capacitance increase switching loss at >100 kHz. | Preferable only if cost sensitivity outweighs efficiency requirements in <100 kHz designs. |
| IPP60R099C7 | 650 V, 4 A, RDS(on) = 0.099 Ω, Qg = 45 nC, Coss = 52 pF | Lower voltage rating limits use to ≤300 V AC input systems; higher Coss degrades high-frequency efficiency. | Suitable only for 230 V AC input PFC stages-not a drop-in replacement for 400 V DC bus applications. |
Compared with STP4NK80ZFP and IPP60R099C7, SPD04N80C3ATMA1 uniquely balances 800 V rating, ultra-low Qg, and industry-grade ruggedness-making it optimal for high-reliability, high-frequency industrial SMPS where both voltage margin and switching efficiency are critical.
Availability
SPD04N80C3ATMA1 is available at Aetrix Electronics and suitable for industrial SMPS, active-clamp forward converters, uninterruptible power supplies, and motor drive inverter stages requiring stable component supply across multi-year production cycles.
Supply support for SPD04N80C3ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The CoolMOS™ C3 product line targets high-efficiency, high-reliability industrial power conversion-specifically engineered for hard-switched topologies operating at elevated DC bus voltages and ambient temperatures.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The SPD04N80C3ATMA1 supports 2.5 A continuous drain current at TC = 100 °C, as specified in its absolute maximum ratings table. This derating reflects thermal limitations of the PG-TO252-3 package under natural convection; forced airflow or larger PCB copper areas can extend usable current capacity.
Does this MOSFET require a negative gate voltage for reliable turn-off?
No. The SPD04N80C3ATMA1 has a gate threshold voltage (VGS(th)) of 2.1–3.9 V and is fully controllable with 0 V to +10 V gate drive. A negative gate voltage is not required or recommended; maintaining VGS ≥ –20 V satisfies the absolute maximum rating and ensures robust noise immunity.
How does the body diode's reverse recovery performance compare to standard silicon diodes?
Its body diode exhibits trr = 520 ns and Qrr = 4 µC at 400 V and 4 A, which is significantly faster and lower-charge than standard FRD-based solutions but slower than dedicated SiC Schottky diodes. This makes it suitable for moderate-frequency freewheeling but not for >300 kHz ZVS designs requiring ultrafast recovery.
Can SPD04N80C3ATMA1 be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (increasing from 1.1 Ω at 25 °C to ~3 Ω at 150 °C) enables inherent current sharing. For stable parallel operation, match gate drive impedance, layout symmetry, and thermal coupling; use individual 10 Ω gate resistors and ensure equal PCB trace lengths to minimize dynamic imbalance.
SPD04N80C3ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.3Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 3.9V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs:
- 31 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 570 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 63W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
SPD04N80C3ATMA1 FAQ
1.How can I place an order for SPD04N80C3ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPD04N80C3ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPD04N80C3ATMA1 reliable?
The price and inventory of SPD04N80C3ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD04N80C3ATMA1 is usually 5 days.
3.What payment methods are accepted for SPD04N80C3ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD04N80C3ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPD04N80C3ATMA1?
SPD04N80C3ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPD04N80C3ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPD04N80C3ATMA1?
For technical support, including SPD04N80C3ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD04N80C3ATMA1 requirements.
6.How does Aetrix verify that SPD04N80C3ATMA1 is sourced from the original manufacturer or authorized distributors?
All SPD04N80C3ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD04N80C3ATMA1 meets industry standards.
7.What is the process for return or replacement of SPD04N80C3ATMA1?
All SPD04N80C3ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPD04N80C3ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPD04N80C3ATMA1 part is unused and in its original packaging.
Return procedure for SPD04N80C3ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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