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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ1470EH-T1-GE3

Name: SQ1470EH-T1-GE3
Brand: Vishay Siliconix
SKU: SQ1470EH-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ1470EH-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: SQ1470EH-T1-GE3.pdf

Description:: MOSFET N-CH 30V 2.8A SC70

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Product details

Overview

SQ1470EH-T1-GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® MOSFET rated for 30 V drain-source voltage, 2.8 A continuous drain current at 25 °C and 125 °C, and 0.065 Ω R_DS(on) at V_GS = 4.5 V. It operates up to +175 °C junction temperature and is used in low-side load switching in automotive body electronics.

For engineers reviewing the SQ1470EH-T1-GE3 datasheet, SQ1470EH-T1-GE3 pinout, SQ1470EH-T1-GE3 application, or SQ1470EH-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, AEC-Q101 qualification status, SC-70 package layout, and real-world substitution guidance for automotive power management designs.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low gate charge (4.4 nC typical) and fast switching (t_d(on) = 8 ns, t_f = 8 ns), enabling efficient PWM control in space-constrained automotive modules. Its 100 % R_g and UIS tested construction ensures robustness against transient overloads.

The device features a 6-pin SC-70 (SOT-363) package with four parallel drain terminals and single source/gate configuration, delivering low thermal resistance (R_thJF = 45 °C/W) and high power density (3.3 W at T_C = 25 °C). Gate threshold voltage is tightly specified (0.6–1.6 V) for reliable logic-level drive compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V automotive systems and transient clamping requirements.
R_DS(on) @ V_GS = 4.5 V	0.065 Ω - Enables <180 mW conduction loss at 2.8 A, critical for thermally constrained PCB layouts.
I_D Continuous	2.8 A - Sustained current capability at both 25 °C and 125 °C case temperature, supporting extended high-temp operation.
Q_g Total Gate Charge	4.4 nC typical - Reduces driver power demand and enables high-frequency switching (>1 MHz) without excessive gate drive loss.
T_J Operating Range	−55 °C to +175 °C - Meets AEC-Q101 stress test requirements for under-hood automotive applications.
V_GS(th)	0.6–1.6 V - Ensures turn-on with standard 3.3 V or 5 V microcontroller GPIOs, eliminating need for level-shifting circuitry.
C_iss	488 pF typical - Low input capacitance minimizes Miller effect and improves noise immunity in noisy automotive environments.

Pinout & Package

Package: SC-70 (SOT-363), 6-lead surface-mount, 1.3 mm × 2.1 mm footprint, 0.95 mm height, lead (Pb)-free and halogen-free per IEC 61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5	Drain (D)	Four parallel drain connections reduce package inductance and improve current sharing; tied internally to die drain metallization.
3	Gate (G)	Single gate input with 3–9.7 Ω internal gate resistance; designed for direct MCU GPIO drive without external series resistor.
6	Source (S)	Common source node; serves as reference for gate drive and return path for load current; connects to PCB ground plane.

Key Features

Feature	Design Value
AEC-Q101 Qualified	Validated for automotive use per stress test standards including HTGB, HTRB, TC, AC/DC HAST, and UHAST - no screening required for qualified applications.
100 % R_g and UIS Tested	Each unit undergoes production-level gate resistance verification and unclamped inductive switching stress testing - guarantees ruggedness in motor and solenoid drive.
TrenchFET® Architecture	Enables ultra-low R_DS(on) × Q_g figure-of-merit (≈0.29 Ω·nC) - improves efficiency in battery-powered and thermally limited modules.
Halogen-Free & RoHS Compliant	Meets EU Directive 2002/95/EC and IEC 61249-2-21 - supports environmental compliance for global OEM vehicle programs.
175 °C Junction Rating	Supports operation in engine bay, headlight, or HVAC control units where ambient temperatures exceed 125 °C - extends system lifetime.

Applications

Automotive LED Headlamp Driver	Body Control Module Load Switch
Use Scenario: High-brightness LED arrays in adaptive front lighting systems requiring precise PWM dimming and thermal resilience. IC Role / Device Role: Low-side switch controlling LED string current with fast turn-off to prevent ghosting during dynamic beam shaping. Use Value: 8 ns fall time and 0.065 Ω R_DS(on) minimize switching losses and self-heating, enabling compact heatsinkless design in sealed headlamp housings.	Use Scenario: Power distribution to door locks, window lifters, and mirror actuators in centralized body control units. IC Role / Device Role: Protected load switch with integrated avalanche energy rating (E_AS = 5 mJ) to absorb inductive kickback from DC motors. Use Value: AEC-Q101 qualification and 175 °C operation ensure reliability across vehicle life cycle, even in hot under-dash locations.
Engine Bay Sensor Power Switch	Start-Stop System Auxiliary Load Control
Use Scenario: Isolation of pressure, temperature, and position sensors exposed to extreme under-hood thermal cycling. IC Role / Device Role: Always-on or microcontroller-gated power switch providing clean, low-noise supply to analog sensor front-ends. Use Value: Ultra-low I_DSS (≤1 μA at 25 °C) prevents battery drain during vehicle sleep mode, meeting ISO 19453-3 quiescent current limits.	Use Scenario: Cycling auxiliary loads (e.g., HVAC blower, fuel pump) during engine restart in 48 V mild-hybrid start-stop systems. IC Role / Device Role: High-reliability, high-cycle-count switching element handling frequent on/off transitions with minimal wear-out. Use Value: 100 % UIS tested construction withstands repetitive inductive transients, reducing field failure risk in high-duty-cycle applications.

Automotive LED Headlamp Driver

Body Control Module Load Switch

Use Scenario: High-brightness LED arrays in adaptive front lighting systems requiring precise PWM dimming and thermal resilience.

IC Role / Device Role: Low-side switch controlling LED string current with fast turn-off to prevent ghosting during dynamic beam shaping.

Use Value: 8 ns fall time and 0.065 Ω R_DS(on) minimize switching losses and self-heating, enabling compact heatsinkless design in sealed headlamp housings.

Use Scenario: Power distribution to door locks, window lifters, and mirror actuators in centralized body control units.

IC Role / Device Role: Protected load switch with integrated avalanche energy rating (E_AS = 5 mJ) to absorb inductive kickback from DC motors.

Use Value: AEC-Q101 qualification and 175 °C operation ensure reliability across vehicle life cycle, even in hot under-dash locations.

Engine Bay Sensor Power Switch

Start-Stop System Auxiliary Load Control

Use Scenario: Isolation of pressure, temperature, and position sensors exposed to extreme under-hood thermal cycling.

IC Role / Device Role: Always-on or microcontroller-gated power switch providing clean, low-noise supply to analog sensor front-ends.

Use Value: Ultra-low I_DSS (≤1 μA at 25 °C) prevents battery drain during vehicle sleep mode, meeting ISO 19453-3 quiescent current limits.

Use Scenario: Cycling auxiliary loads (e.g., HVAC blower, fuel pump) during engine restart in 48 V mild-hybrid start-stop systems.

IC Role / Device Role: High-reliability, high-cycle-count switching element handling frequent on/off transitions with minimal wear-out.

Use Value: 100 % UIS tested construction withstands repetitive inductive transients, reducing field failure risk in high-duty-cycle applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LSD-13	R_DS(on) = 0.045 Ω @ 4.5 V, but only rated to 150 °C TJ; not AEC-Q101 qualified.	Not suitable for under-hood applications above 150 °C; acceptable for cabin-mounted modules with lower thermal stress.	Select when higher efficiency is prioritized over automotive qualification and extended temperature range.
AO3414	R_DS(on) = 0.055 Ω @ 4.5 V, 175 °C rated, but lacks 100 % UIS test and AEC-Q101 documentation.	Used in industrial controls; may require additional system-level surge protection for automotive inductive loads.	Choose for cost-sensitive non-OEM designs where full AEC-Q101 traceability is not mandated.

Compared with DMN2020LSD-13 and AO3414, the SQ1470EH-T1-GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, 100 % UIS testing, and halogen-free compliance - making it the only drop-in solution for Tier 1 automotive power switches requiring full specification traceability.

Availability

SQ1470EH-T1-GE3 is available at Aetrix Electronics and suitable for automotive LED drivers, body control module load switching, and engine bay sensor power management requiring stable component supply and long-term lifecycle support.

Supply support for SQ1470EH-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ1470EH-T1-GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-temperature, high-reliability low-side switching in next-generation vehicle electronics.

FAQ

What is the maximum continuous drain current for SQ1470EH-T1-GE3 at 125 °C case temperature?

The SQ1470EH-T1-GE3 supports 2.8 A continuous drain current at both 25 °C and 125 °C case temperature, as confirmed in the Absolute Maximum Ratings table. This flat derating curve reflects its robust thermal design and enables consistent performance across wide ambient conditions without additional current reduction.

Is SQ1470EH-T1-GE3 qualified to AEC-Q101, and what does that cover?

Yes, SQ1470EH-T1-GE3 is explicitly AEC-Q101 qualified per the product summary. This includes qualification testing for high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), temperature cycling (TC), and unbiased highly accelerated stress test (UHAST), ensuring suitability for automotive under-hood applications.

What is the gate threshold voltage range for SQ1470EH-T1-GE3, and how does it affect microcontroller compatibility?

The gate threshold voltage (V_GS(th)) for SQ1470EH-T1-GE3 is specified from 0.6 V to 1.6 V at I_D = 250 μA. This low and tightly bounded range ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIO outputs, eliminating the need for external gate drivers in most automotive control circuits.

Does SQ1470EH-T1-GE3 include integrated avalanche energy rating, and what is its value?

Yes, SQ1470EH-T1-GE3 is rated for 5 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, as listed in the Absolute Maximum Ratings. This rating validates its ability to safely absorb inductive energy from relay or motor coils without failure during switching transitions.

What package type and lead finish does SQ1470EH-T1-GE3 use, and is it RoHS compliant?

SQ1470EH-T1-GE3 uses the SC-70 (SOT-363) package with lead (Pb)-free and halogen-free terminations, fully compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21. The "-GE3" suffix confirms green, matte-tin plating and tape-and-reel packaging per JEDEC J-STD-020 moisture sensitivity level 1.

SQ1470EH-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Digi-Reel®

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 65mOhm @ 3.8A, 4.5V

Vgs(th) (Max) @ Id:: 1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.6 nC @ 4.5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 610 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-70-6

SQ1470EH-T1-GE3 FAQ

1.How can I place an order for SQ1470EH-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ1470EH-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ1470EH-T1-GE3 reliable?

The price and inventory of SQ1470EH-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ1470EH-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SQ1470EH-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ1470EH-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ1470EH-T1-GE3?

SQ1470EH-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ1470EH-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ1470EH-T1-GE3?

For technical support, including SQ1470EH-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ1470EH-T1-GE3 requirements.

6.How does Aetrix verify that SQ1470EH-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SQ1470EH-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ1470EH-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SQ1470EH-T1-GE3?

All SQ1470EH-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ1470EH-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ1470EH-T1-GE3 part is unused and in its original packaging.

Return procedure for SQ1470EH-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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