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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2319ES-T1-GE3

Name: SQ2319ES-T1-GE3
Brand: Vishay Siliconix
SKU: SQ2319ES-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ2319ES-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2319ES-T1-GE3.pdf

Description:: MOSFET P-CH 40V 4.6A TO-236

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Product details

Overview

SQ2319ES-T1-GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET with -40 V V_DS, 0.075 Ω R_DS(on) at -10 V V_GS, -4.6 A continuous drain current, TO-236 (SOT-23) package, and AEC-Q101 qualification - used in low-side load switching for 12 V automotive body electronics.

For engineers reviewing the SQ2319ES-T1-GE3 datasheet, SQ2319ES-T1-GE3 pinout, SQ2319ES-T1-GE3 application, or SQ2319ES-T1-GE3 equivalent, key selection criteria include guaranteed R_g and UIS testing, -175 °C maximum junction temperature, and halogen-free RoHS-compliant construction per IEC 61249-2-21.

Technical Context

This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching in a thermally efficient SOT-23 footprint. Its gate threshold voltage range of -1.5 V to -2.5 V enables reliable turn-on with standard 3.3 V or 5 V logic-level drive in high-side or low-side configurations.

The device integrates a robust intrinsic body diode with -0.8 V to -1.2 V forward voltage at -1.5 A, supporting bidirectional current handling in reverse-polarity protection and H-bridge motor control. Thermal resistance from junction-to-foot is 50 °C/W, enabling direct thermal coupling to PCB copper pours in space-constrained modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - supports 12 V automotive systems with margin against load-dump transients up to ISO 7637-2 Pulse 5a.
R_DS(on) @ -10 V	0.075 Ω - delivers ≤ 1.6 W conduction loss at -4.6 A, enabling compact thermal design without heatsink.
I_D (continuous)	-4.6 A @ T_C = 25 °C - rated for sustained operation in ambient temperatures up to 85 °C with proper PCB copper area.
Q_g	10.5–16 nC - enables fast switching with <30 ns turn-off delay using 1 Ω gate resistor, reducing dynamic losses in PWM applications.
T_J max	+175 °C - qualified for under-hood environments including engine control units and transmission modules.
V_GS(th)	-1.5 to -2.5 V - ensures full enhancement with 3.3 V microcontroller GPIO, eliminating need for level-shifting circuitry.
E_AS	7.2 mJ - withstands inductive energy from solenoid or relay coils without avalanche failure during fault conditions.

Pinout & Package

Package: TO-236 (SOT-23), surface-mount, 3-terminal plastic package with exposed drain pad for thermal enhancement. Dimensions per JEDEC TO-236AB.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Connected to system ground or higher potential rail; carries full load current and serves as reference for gate drive.
2 (Gate)	Control electrode for channel formation	High-impedance input requiring <100 nA leakage; driven low to turn ON; requires series resistor to damp ringing.
3 (Drain)	Main power output terminal	Internally connected to exposed copper pad; must be soldered to ≥1 cm² 2-oz copper pour for thermal performance.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD - suitable for ASIL-B systems with external diagnostics.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures from parasitic oscillation or avalanche overstress.
TrenchFET® architecture	Enables lower R_DS(on) per die area vs. planar MOSFETs - reduces package size while maintaining thermal performance in SOT-23.
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports end-of-life recycling and avoids corrosive decomposition products in high-temp environments.

Applications

Reverse Polarity Protection	LED Headlamp Control
Use Scenario: Prevents damage to 12 V vehicle electronics when battery is connected backward. IC Role / Device Role / Timing Role: Low-side switch placed between load ground and chassis ground; conducts only when polarity is correct. Use Value: Withstands -40 V reverse input and delivers <50 mV drop at 4 A, minimizing power loss and heat generation in always-on modules.	Use Scenario: PWM dimming and on/off control of automotive LED headlamps. IC Role / Device Role / Timing Role: High-efficiency low-side switch operating at 100–1 kHz; handles peak currents up to -18 A in pulsed mode. Use Value: 16 nC total gate charge enables clean 200 ns rise/fall edges, reducing EMI and improving dimming linearity across 0–100 % duty cycle.
Body Control Module Load Switch	Window Lift Motor Driver
Use Scenario: Power management for interior lighting, door locks, and HVAC actuators in BCMs. IC Role / Device Role / Timing Role: Individually controlled load switch with diagnostic feedback via current sense or open-drain flag. Use Value: -175 °C junction rating allows operation in sealed enclosures near fuse boxes; 0.145 Ω R_DS(on) at -4.5 V enables direct MCU GPIO drive without buffer.	Use Scenario: Bidirectional drive for reversible DC motors in power window systems. IC Role / Device Role / Timing Role: One quadrant of half-bridge configuration; body diode conducts reverse current during direction reversal. Use Value: -1.2 V V_SD at -1.5 A reduces freewheeling loss by 30 % vs. discrete Schottky solutions, improving efficiency and thermal margin.

Reverse Polarity Protection

LED Headlamp Control

Use Scenario: Prevents damage to 12 V vehicle electronics when battery is connected backward.

IC Role / Device Role / Timing Role: Low-side switch placed between load ground and chassis ground; conducts only when polarity is correct.

Use Value: Withstands -40 V reverse input and delivers <50 mV drop at 4 A, minimizing power loss and heat generation in always-on modules.

Use Scenario: PWM dimming and on/off control of automotive LED headlamps.

IC Role / Device Role / Timing Role: High-efficiency low-side switch operating at 100–1 kHz; handles peak currents up to -18 A in pulsed mode.

Use Value: 16 nC total gate charge enables clean 200 ns rise/fall edges, reducing EMI and improving dimming linearity across 0–100 % duty cycle.

Body Control Module Load Switch

Window Lift Motor Driver

Use Scenario: Power management for interior lighting, door locks, and HVAC actuators in BCMs.

IC Role / Device Role / Timing Role: Individually controlled load switch with diagnostic feedback via current sense or open-drain flag.

Use Value: -175 °C junction rating allows operation in sealed enclosures near fuse boxes; 0.145 Ω R_DS(on) at -4.5 V enables direct MCU GPIO drive without buffer.

Use Scenario: Bidirectional drive for reversible DC motors in power window systems.

IC Role / Device Role / Timing Role: One quadrant of half-bridge configuration; body diode conducts reverse current during direction reversal.

Use Value: -1.2 V V_SD at -1.5 A reduces freewheeling loss by 30 % vs. discrete Schottky solutions, improving efficiency and thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2011UFD-7	R_DS(on) = 0.055 Ω @ -4.5 V; smaller 1.6 × 1.6 mm DFN package; no AEC-Q101 certification	Not qualified for automotive safety-critical functions; limited to infotainment or comfort systems without ASIL requirements	Select when board space is constrained and automotive qualification is not required.
IPD250N04LG	R_DS(on) = 0.025 Ω @ -10 V; TO-252 package; AEC-Q101 qualified; higher ID = -60 A	Over-specified for low-current loads; requires larger PCB area and higher gate drive energy	Select only when >10 A capability and enhanced thermal mass are needed - not a drop-in replacement.

Compared with DMN2011UFD-7 and IPD250N04LG, the SQ2319ES-T1-GE3 uniquely balances AEC-Q101 compliance, SOT-23 footprint, and -4.6 A rating - making it optimal for cost-sensitive, space-limited automotive body electronics where qualification and thermal reliability are mandatory but extreme current capacity is unnecessary.

Availability

SQ2319ES-T1-GE3 is available at Aetrix Electronics and suitable for automotive body control modules, reverse polarity protection circuits, and LED lighting drivers requiring stable component supply across multi-year production cycles.

Supply support for SQ2319ES-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on high-reliability and automotive-grade performance.

The SQ2319ES-T1-GE3 belongs to Vishay's TrenchFET® Automotive P-Channel MOSFET product line, engineered specifically for robust, low-R_DS(on) switching in 12 V vehicle subsystems operating up to +175 °C junction temperature.

FAQ

What is the maximum continuous drain current rating for SQ2319ES-T1-GE3 at 125 °C case temperature?

The SQ2319ES-T1-GE3 has a continuous drain current rating of -2.6 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under elevated ambient conditions and must be applied when designing for under-hood environments without forced airflow or large copper areas.

Is SQ2319ES-T1-GE3 suitable for high-side switching applications?

Yes, SQ2319ES-T1-GE3 can be used in high-side configurations, but requires gate drive voltage exceeding the source potential - typically implemented with a charge pump or bootstrap circuit. Its -2.5 V maximum V_GS(th) ensures reliable turn-on when V_GS reaches -4.5 V, though layout must minimize gate loop inductance to prevent oscillation.

Does SQ2319ES-T1-GE3 have avalanche capability, and is it rated for repetitive operation?

SQ2319ES-T1-GE3 is 100 % tested for unclamped inductive switching (UIS) and rated for single-pulse avalanche energy of 7.2 mJ. However, the datasheet does not specify repetitive avalanche rating, so designs must avoid repeated avalanche events - use snubbers or clamping diodes for inductive loads with frequent switching.

What is the thermal resistance from junction to ambient for SQ2319ES-T1-GE3 under standard PCB mounting?

The junction-to-ambient thermal resistance (R_thJA) for SQ2319ES-T1-GE3 is 166 °C/W when mounted on a 1" square FR-4 PCB with 2 oz. copper on both sides. This value assumes minimal copper; adding thermal vias and expanding the drain pad area can reduce effective R_thJA by up to 40 % in optimized layouts.

How is the marking code "8H" on SQ2319ES-T1-GE3 interpreted?

The marking code "8H" on the top of the SQ2319ES-T1-GE3 package identifies the specific device variant and date code per Vishay's internal traceability system. It corresponds to the SQ2319ES part number and indicates compliance with the S11-2111-Rev. C specification - not a separate functional variant or revision level.

SQ2319ES-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 75mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ2319ES-T1-GE3 FAQ

1.How can I place an order for SQ2319ES-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2319ES-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2319ES-T1-GE3 reliable?

The price and inventory of SQ2319ES-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2319ES-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SQ2319ES-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2319ES-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2319ES-T1-GE3?

SQ2319ES-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2319ES-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2319ES-T1-GE3?

For technical support, including SQ2319ES-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2319ES-T1-GE3 requirements.

6.How does Aetrix verify that SQ2319ES-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SQ2319ES-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2319ES-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SQ2319ES-T1-GE3?

All SQ2319ES-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2319ES-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2319ES-T1-GE3 part is unused and in its original packaging.

Return procedure for SQ2319ES-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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