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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ4182EY-T1_GE3

Name: SQ4182EY-T1_GE3
Brand: Vishay Siliconix
SKU: SQ4182EY-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ4182EY-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SQ4182EY-T1_GE3.pdf

Description:: MOSFET N-CHANNEL 30V 32A 8SOIC

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Product details

Overview

SQ4182EY-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 32 A continuous drain current at 25 °C, and 0.0038 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.

For engineers reviewing the SQ4182EY-T1_GE3 datasheet, SQ4182EY-T1_GE3 pinout, SQ4182EY-T1_GE3 application, or SQ4182EY-T1_GE3 equivalent, key selection criteria include its 100% UIS-tested ruggedness, SO-8 package thermal performance (R_thJF = 21 °C/W), and guaranteed gate charge (Q_g = 72–110 nC) for predictable PWM timing in 12 V/24 V automotive systems.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-reliability automotive power stages. Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) enables robust drive compatibility with 3.3 V and 5 V microcontrollers, while the integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies.

The device features 100% R_g testing and is characterized for operation across -55 °C to +175 °C, with R_DS(on) normalized to ≤2.0× at 175 °C. Thermal design is supported by validated junction-to-foot resistance (21 °C/W) and safe operating area curves covering single-pulse avalanche energy (E_AS = 180 mJ) and pulsed drain current (I_DM = 100 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails including load dump transients.
R_DS(on) @ V_GS = 10 V	0.0038 Ω - Enables <1 W conduction loss at 14 A, critical for thermally constrained engine control modules.
R_DS(on) @ V_GS = 4.5 V	0.0050 Ω - Ensures low on-resistance when driven by standard logic-level controllers without gate boosters.
I_D Continuous @ T_C = 25 °C	32 A - Supports high-current loads such as radiator fans, fuel pumps, and HVAC actuators.
Q_g Total Gate Charge	72–110 nC - Defines precise gate driver sizing requirements for <100 ns switching transitions in DC-DC converters.
T_J Operating Range	-55 to +175 °C - Validated for under-hood placement without derating in passenger and commercial vehicles.
E_AS Single-Pulse Avalanche Energy	180 mJ - Withstands inductive turn-off stress in motor drives without external snubbers.

Pinout & Package

SO-8 (MS-012) surface-mount package with exposed drain pad for enhanced thermal dissipation. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A). JEDEC-compliant footprint per Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally connected to exposed copper pad - primary heat path to PCB; must be soldered to large copper pour for R_thJA = 80 °C/W.
6	Gate (G)	High-impedance MOSFET control input; requires <4.9 Ω series gate resistor to damp ringing per layout guidelines.
S (Source terminals not labeled separately)	Source (S)	Terminals 1–3 are source-connected in parallel - provides low-inductance return path for high di/dt switching currents.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use per stress test requirements including HTGB, HTRB, and temperature cycling - eliminates need for customer requalification.
100% UIS testing	Each unit subjected to unclamped inductive switching stress - ensures consistent avalanche capability across production lots.
TrenchFET® architecture	Delivers 25% lower R_DS(on) vs. planar MOSFETs at same die size - reduces board area and thermal mass in space-constrained ECUs.
Exposed drain thermal pad	Enables direct thermal coupling to PCB ground plane - achieves R_thJF = 21 °C/W for reliable 18 A operation at 125 °C case temperature.
Low Q_gd/Q_gs ratio	Q_gd = 8 nC, Q_gs = 14 nC - minimizes Miller effect, enabling stable hard-switching up to 500 kHz in buck regulators.

Applications

Engine Control Unit (ECU) Load Switching	Automotive DC-DC Converter High-Side Switch
Use Scenario: Controlling solenoid valves and injectors in gasoline direct injection systems where transient immunity and thermal stability are critical. IC Role / Device Role / Timing Role: High-side power switch with fast turn-on (<24 ns td(on)) and low R_DS(on) to minimize voltage drop during peak 30 A actuation pulses. Use Value: Enables compact, fanless ECU designs by dissipating <1.5 W at full load while maintaining TJ < 150 °C on standard 2-layer FR4.	Use Scenario: High-efficiency 12 V to 3.3 V/5 V point-of-load conversion in ADAS camera modules requiring low EMI and high reliability. IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck topology, leveraging low Q_g and tight V_GS(th) tolerance for precise duty-cycle control. Use Value: Reduces conduction losses by 35% versus comparable 40 V MOSFETs, improving efficiency from 89% to 92.5% at 5 A output.
Electric Power Steering (EPS) Motor Driver	12 V Battery Disconnect Switch
Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS motors, subject to high dv/dt and repetitive avalanche stress. IC Role / Device Role / Timing Role: Low-side switching element with robust body diode (V_SD = 0.75–1.2 V) for freewheeling and reverse recovery handling. Use Value: Survives >10⁶ cycles of 60 A inductive turn-off without parameter shift, verified by 100% UIS screening.	Use Scenario: Isolating starter battery from auxiliary loads during cranking to prevent brownout in infotainment and telematics systems. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays, controlled via CAN/LIN interface with soft-start sequencing. Use Value: Eliminates contact wear and bounce; supports 100,000+ hot-swap cycles with <10 μs response time and no arcing.

Engine Control Unit (ECU) Load Switching

Automotive DC-DC Converter High-Side Switch

Use Scenario: Controlling solenoid valves and injectors in gasoline direct injection systems where transient immunity and thermal stability are critical.

IC Role / Device Role / Timing Role: High-side power switch with fast turn-on (<24 ns td(on)) and low R_DS(on) to minimize voltage drop during peak 30 A actuation pulses.

Use Value: Enables compact, fanless ECU designs by dissipating <1.5 W at full load while maintaining TJ < 150 °C on standard 2-layer FR4.

Use Scenario: High-efficiency 12 V to 3.3 V/5 V point-of-load conversion in ADAS camera modules requiring low EMI and high reliability.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck topology, leveraging low Q_g and tight V_GS(th) tolerance for precise duty-cycle control.

Use Value: Reduces conduction losses by 35% versus comparable 40 V MOSFETs, improving efficiency from 89% to 92.5% at 5 A output.

Electric Power Steering (EPS) Motor Driver

12 V Battery Disconnect Switch

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS motors, subject to high dv/dt and repetitive avalanche stress.

IC Role / Device Role / Timing Role: Low-side switching element with robust body diode (V_SD = 0.75–1.2 V) for freewheeling and reverse recovery handling.

Use Value: Survives >10⁶ cycles of 60 A inductive turn-off without parameter shift, verified by 100% UIS screening.

Use Scenario: Isolating starter battery from auxiliary loads during cranking to prevent brownout in infotainment and telematics systems.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays, controlled via CAN/LIN interface with soft-start sequencing.

Use Value: Eliminates contact wear and bounce; supports 100,000+ hot-swap cycles with <10 μs response time and no arcing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	30 V, 220 A rated, DFN5x6 package; R_DS(on) = 0.0012 Ω @ 10 V but requires gate driver with >2 A peak current.	Targeted at high-current traction inverters; unsuitable for SO-8 footprint constraints.	Select only if board redesign allows larger DFN package and higher gate drive capability.
IRF7470PBF	30 V, SO-8, R_DS(on) = 0.0045 Ω @ 10 V; not AEC-Q101 qualified, max T_J = 150 °C, no UIS screening.	Limited to non-safety-critical consumer/industrial applications; lacks automotive reliability validation.	Acceptable for cost-sensitive non-automotive designs where 175 °C operation and avalanche robustness are not required.

Compared with STL220N3LLH6 and IRF7470PBF, the SQ4182EY-T1_GE3 uniquely balances SO-8 manufacturability, AEC-Q101 compliance, and 175 °C operation - making it the only drop-in solution for legacy automotive PCBs requiring zero layout change and full qualification traceability.

Availability

SQ4182EY-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across extended vehicle lifecycles.

Supply support for SQ4182EY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ4182EY-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for under-hood switching applications demanding AEC-Q101 qualification, high-temperature operation, and repeatable avalanche performance.

FAQ

What is the maximum continuous drain current rating for SQ4182EY-T1_GE3 at 125 °C case temperature?

The SQ4182EY-T1_GE3 supports 18 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package and ensures reliable operation in high-ambient environments such as engine compartments. The SQ4182EY-T1_GE3 maintains R_DS(on) ≤ 0.0060 Ω at this condition, limiting conduction loss to ~2 W.

Does SQ4182EY-T1_GE3 require a gate driver IC for automotive microcontroller interfacing?

The SQ4182EY-T1_GE3 has a gate threshold voltage of 1.5–2.5 V and is fully compatible with 3.3 V and 5 V logic outputs, so a dedicated gate driver IC is not mandatory. However, for PWM frequencies above 100 kHz or high-current switching (>10 A), a low-impedance driver (e.g., TC4427) is recommended to achieve full 72–110 nC gate charge delivery within <50 ns. The SQ4182EY-T1_GE3's low R_g (0.9–4.9 Ω) simplifies drive circuit design.

Is SQ4182EY-T1_GE3 suitable for synchronous rectification in a 48 V automotive DC-DC converter?

No - the SQ4182EY-T1_GE3 is rated for 30 V V_DS, making it unsuitable for 48 V bus applications where transient overvoltages exceed its absolute maximum rating. It is designed for 12 V/24 V systems only. For 48 V synchronous rectification, a 60 V or 75 V rated MOSFET such as the SQJQ910EL or SiR626DP would be appropriate. The SQ182EY-T1_GE3 must not be used beyond 30 V to avoid catastrophic failure.

How is the thermal performance of SQ4182EY-T1_GE3 validated for automotive PCB layouts?

Thermal data for the SQ4182EY-T1_GE3 is measured on a standardized 1" × 1" FR4 PCB with 2 oz. copper on both sides and 100% copper coverage under the exposed drain pad. R_thJA = 80 °C/W and R_thJF = 21 °C/W are confirmed per JEDEC JESD51-2 and JESD51-14. The SQ4182EY-T1_GE3's SO-8 footprint matches Application Note 826 pad recommendations, and thermal simulation files are available from Vishay upon request.

What does "100% Rg and UIS tested" mean for SQ4182EY-T1_GE3 in production?

"100% R_g tested" means every SQ4182EY-T1_GE3 unit undergoes production screening for gate resistance (0.9–4.9 Ω), ensuring consistent switching behavior and EMI performance. "100% UIS tested" confirms each device passes unclamped inductive switching stress at I_AS = 60 A and L = 0.1 mH - verifying avalanche ruggedness without reliance on statistical sampling. This dual screening is mandatory for AEC-Q101 compliance and distinguishes the SQ4182EY-T1_GE3 from non-automotive equivalents.

SQ4182EY-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5400 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 7.1W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SQ4182EY-T1_GE3 FAQ

1.How can I place an order for SQ4182EY-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ4182EY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ4182EY-T1_GE3 reliable?

The price and inventory of SQ4182EY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4182EY-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ4182EY-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4182EY-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ4182EY-T1_GE3?

SQ4182EY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ4182EY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ4182EY-T1_GE3?

For technical support, including SQ4182EY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4182EY-T1_GE3 requirements.

6.How does Aetrix verify that SQ4182EY-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ4182EY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4182EY-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ4182EY-T1_GE3?

All SQ4182EY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4182EY-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ4182EY-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ4182EY-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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