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Vishay Siliconix SQ4431EY-T1_GE3
- Part No.:
- SQ4431EY-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SQ4431EY-T1_GE3.pdf
- Description:
- MOSFET P-CH 30V 10.8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,312
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Product details
Overview
SQ4431EY-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V VDS, 0.030 Ω RDS(on) at VGS = -10 V, and -10.8 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood power switching in DC-DC converters and motor control circuits.
For engineers reviewing the SQ4431EY-T1_GE3 datasheet, SQ4431EY-T1_GE3 pinout, SQ4431EY-T1_GE3 application, or SQ4431EY-T1_GE3 equivalent, this page delivers verified thermal resistance (RthJA = 92 °C/W), gate charge (Qg = 25 nC), avalanche energy rating (EAS = 22 mJ), and SO-8 terminal mapping - all critical for high-reliability automotive power design validation.
Technical Context
This P-channel MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance and robust unclamped inductive switching (UIS) performance. Its -2.0 V typical gate threshold voltage (VGS(th)) enables direct logic-level drive from 3.3 V or 5 V controllers without level shifting.
The device features fully characterized dynamic parameters including Ciss = 1265 pF, Coss = 243 pF, and Crss = 167 pF at VDS = -15 V, supporting precise snubber and gate driver sizing in high-frequency buck or H-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for 24 V automotive systems with transient margin |
| RDS(on) @ VGS = -10 V | 0.030 Ω - Enables <1 W conduction loss at 5.8 A continuous load at 25 °C |
| RDS(on) @ VGS = -4.5 V | 0.052 Ω - Supports direct interface with 4.5 V microcontroller GPIOs |
| ID (continuous, TC = 25 °C) | -10.8 A - Sustains full-rated current with 1"×1" FR-4 PCB copper area |
| EAS | 22 mJ - Rated single-pulse avalanche energy for reliable inductive turn-off |
| RthJA | 92 °C/W - Thermal resistance defines heatsinking requirement for ambient-limited operation |
| Qg | 25 nC - Total gate charge determines driver strength needed for <50 ns switching transitions |
Pinout & Package
SO-8 narrow-body surface-mount package (JEDEC MS-012), 5.0 mm × 4.0 mm footprint, 1.75 mm max height, with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source (S) | Common source connection; pins 1–3 and 8 internally bonded for low-inductance return path |
| 4 | Gate (G) | Control input; requires ≤±20 V gate drive; 3.36 Ω typical gate resistance limits ringing |
| 5, 6, 7 | Drain (D) | Power output node; pins 5–7 tied to exposed thermal pad for efficient heat transfer to PCB |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications per stress test requirements including HTOL, TC, UHAST, and ESD |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® technology | Enables lower RDS(on) × Qg figure-of-merit versus planar P-channel alternatives |
| 175 °C maximum junction temperature | Supports operation in engine bay environments without derating below 125 °C ambient |
| Exposed drain pad | Thermal path to PCB reduces RthJA by ~30 % vs. standard SO-8; improves power density |
Applications
| Automotive Body Control Module (BCM) | 12 V/24 V DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Load switching for HVAC actuators, door locks, and lighting in passenger compartment modules. IC Role / Device Role / Timing Role: High-side P-channel switch controlled by microcontroller GPIO with internal pull-up. Use Value: Low 0.052 Ω RDS(on) at -4.5 V ensures <1.3 W loss at 5 A, enabling compact thermally constrained PCB layouts. |
Use Scenario: Synchronous rectification or high-side switch in isolated flyback or forward converters for infotainment power rails. IC Role / Device Role / Timing Role: Power switch operating at 100–500 kHz with fast 10 ns turn-on delay and 12 ns rise time. Use Value: 25 nC Qg and 167 pF Crss minimize switching losses and cross-conduction risk in synchronous designs. |
| Engine Control Unit (ECU) Fuel Pump Driver | Industrial Motor Starter Protection Circuit |
Use Scenario: PWM-controlled fuel pump supply with reverse polarity and load dump protection. IC Role / Device Role / Timing Role: Robust high-side switch handling repetitive 22 mJ avalanche events during inductive turn-off. Use Value: AEC-Q101 qualification and 21 A IAS ensure survivability across 100,000+ cold cranking cycles. |
Use Scenario: Soft-start and overcurrent protection for 24 V BLDC motor gate drivers in factory automation. IC Role / Device Role / Timing Role: Current-sense enabled high-side switch using integrated source sensing via Kelvin source pins (1, 2, 3, 8). Use Value: Four-source-pin configuration reduces sense path inductance, improving accuracy of analog current monitoring. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPbF | TO-220 package; higher RDS(on) = 0.3 Ω at -10 V; no AEC-Q101 qualification | Requires heatsink; limited to non-automotive industrial use | Choose when cost-sensitive prototyping needs through-hole mounting and thermal mass is available |
| DMT3006LPS-13 | SO-8; RDS(on) = 0.028 Ω at -10 V; AEC-Q101 qualified; lower Qg = 18 nC | Better high-frequency efficiency but reduced avalanche rating (EAS = 15 mJ) | Prefer for high-switching-frequency DC-DC where avalanche stress is minimal and gate drive loss dominates |
Compared with IRF9530NPbF and DMT3006LPS-13, the SQ4431EY-T1_GE3 balances automotive reliability (AEC-Q101 + 175 °C), moderate switching speed (25 nC Qg), and strong ruggedness (22 mJ EAS), making it optimal for under-hood power switches where transient immunity and long-term stability outweigh peak efficiency gains.
Availability
SQ4431EY-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, and 24 V DC-DC converter designs requiring stable component supply across extended temperature and lifecycle demands.
Supply support for SQ4431EY-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ4431EY-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-temperature, high-ruggedness power switching in engine control, chassis, and body electronics.
FAQ
What is the maximum junction temperature rating for SQ4431EY-T1_GE3?
The SQ4431EY-T1_GE3 has a maximum operating junction temperature of +175 °C, validated per AEC-Q101 stress testing. This allows deployment in under-hood automotive locations where ambient temperatures exceed 125 °C, provided PCB thermal design maintains TJ ≤ 175 °C under worst-case power dissipation.
Is SQ4431EY-T1_GE3 pin-compatible with other SO-8 P-channel MOSFETs?
The SQ4431EY-T1_GE3 uses standard SO-8 (MS-012) pinout: pins 1–3 and 8 are Source, pin 4 is Gate, and pins 5–7 are Drain. While physically compatible with generic SO-8 footprints, electrical differences in RDS(on), Qg, and thermal performance require circuit revalidation before substitution.
Does SQ4431EY-T1_GE3 support logic-level gate drive?
Yes - the SQ4431EY-T1_GE3 has a typical VGS(th) of -2.0 V and guarantees RDS(on) ≤ 0.052 Ω at VGS = -4.5 V, enabling direct drive from 3.3 V or 5 V microcontrollers without external level shifters in most automotive BCM applications.
What is the avalanche energy rating of SQ4431EY-T1_GE3 and how is it tested?
The SQ4431EY-T1_GE3 is rated for 22 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH. This value is confirmed by 100 % UIS (unclamped inductive switching) testing per JEDEC JESD24-11, ensuring robustness during inductive load turn-off in motor and solenoid drivers.
How does the thermal performance of SQ4431EY-T1_GE3 compare between PCB mount and junction-to-foot metrics?
The SQ4431EY-T1_GE3 specifies RthJA = 92 °C/W (PCB mount) and RthJF = 25 °C/W (junction-to-foot). The lower RthJF confirms the exposed drain pad provides a highly efficient thermal path to the PCB copper, while RthJA reflects total system resistance including board layout and airflow.
SQ4431EY-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1265 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SQ4431EY-T1_GE3 FAQ
1.How can I place an order for SQ4431EY-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ4431EY-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ4431EY-T1_GE3 reliable?
The price and inventory of SQ4431EY-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ4431EY-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ4431EY-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ4431EY-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ4431EY-T1_GE3?
SQ4431EY-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ4431EY-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ4431EY-T1_GE3?
For technical support, including SQ4431EY-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ4431EY-T1_GE3 requirements.
6.How does Aetrix verify that SQ4431EY-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ4431EY-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ4431EY-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ4431EY-T1_GE3?
All SQ4431EY-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ4431EY-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ4431EY-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ4431EY-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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