Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ7002K-T1-GE3

Name: SQ7002K-T1-GE3
Brand: Vishay Siliconix
SKU: SQ7002K-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQ7002K-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ7002K-T1-GE3.pdf

Description:: MOSFET N-CH 60V 320MA SOT23-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,504

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQ7002K-T1-GE3 from Vishay Siliconix is an AEC-Q101-qualified N-channel TrenchFET® power MOSFET with 60 V V_DS, 1.30 Ω R_DS(on) at 10 V V_GS, and 175 °C maximum junction temperature, designed for low-current automotive load switching in space-constrained PCBs.

For engineers reviewing the SQ7002K-T1-GE3 datasheet, SQ7002K-T1-GE3 pinout, SQ7002K-T1-GE3 application, or SQ7002K-T1-GE3 equivalent, key selection factors include its SOT-23 package thermal resistance (350 °C/W R_thJA), 2000 V ESD protection, and guaranteed R_DS(on) performance up to 175 °C junction temperature.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance in a miniature surface-mount package. Its gate threshold voltage range (1.0–2.5 V) enables reliable turn-on with standard 3.3 V and 5 V logic drivers, while the integrated body diode supports bidirectional current handling in low-power DC bias circuits.

The device operates across -55 °C to +175 °C junction temperature and meets halogen-free and RoHS requirements. Its safe operating area is limited by R_DS(on) at short pulses and by ID = 0.32 A continuous at 25 °C, making it suitable for intermittent, low-duty-cycle switching rather than sustained high-current loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; defines upper limit for supply rail compatibility in 12 V/24 V automotive systems.
R_DS(on) @ 10 V	1.30 Ω - On-resistance measured at 0.5 A and 25 °C; determines conduction loss and self-heating under nominal load.
I_D Continuous	0.32 A @ 25 °C - Maximum steady-state drain current; derates to 0.24 A at 125 °C ambient due to thermal limits.
V_GS(th)	1.0–2.5 V - Gate threshold range; ensures robust turn-on with 3.3 V microcontroller GPIO without level-shifting.
T_J Max	+175 °C - Maximum junction temperature; enables operation in under-hood environments per AEC-Q101 stress testing.
R_thJA	350 °C/W - Junction-to-ambient thermal resistance on 1" FR-4 PCB; sets practical power dissipation ceiling at ~143 mW for ΔT = 50 °C rise.
C_iss	19–24 pF - Input capacitance at 30 V V_DS; impacts gate drive energy and switching speed in low-power PWM applications.

Pinout & Package

Package: SOT-23 (TO-236), surface-mount, 3-terminal plastic package with gull-wing leads. Dimensions: 2.9 mm × 1.3 mm × 1.0 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts logic-level voltage to modulate channel conductivity; requires <1.4 nC total gate charge for full turn-on.
2 (S)	Source	Reference node for gate drive and current return path; tied to system ground or low-side reference in most configurations.
3 (D)	Drain	High-side switch output; connects to load supply rail; thermally coupled to PCB copper via exposed drain pad in some variants (not applicable here).

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including temperature cycling, humidity bias, and mechanical shock per JESD47.
TrenchFET® architecture	Enables lower R_DS(on) per die area vs. planar MOSFETs, critical for miniaturized SOT-23 footprint.
2000 V HBM ESD rating	Protects against electrostatic discharge during board assembly and handling without external clamping.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and EU Directive 2002/95/EC; supports environmentally regulated automotive supply chains.
175 °C rated junction	Supports operation in engine control units, lighting modules, and other high-temperature under-hood locations.

Applications

Automotive LED Lighting Control	Engine Control Unit (ECU) Sensor Biasing
Use Scenario: Switching low-current bias voltage for position sensors or Hall-effect ICs in engine compartments where ambient temperatures exceed 125 °C. IC Role / Device Role / Timing Role: Low-side load switch providing controlled power enable/disable with minimal leakage (<1 µA at 60 V, 25 °C). Use Value: Ensures sensor reliability under thermal stress while maintaining <1.30 Ω on-resistance to minimize voltage drop and self-heating.	Use Scenario: Driving indicator LEDs on dashboard clusters requiring stable dimming control and fault-tolerant shutdown. IC Role / Device Role / Timing Role: Constant-current sink switch enabling PWM-based brightness adjustment with fast turn-on/off times (≤22 ns td(on)). Use Value: Delivers precise current regulation with <1.90 Ω R_DS(on) at 4.5 V V_GS, compatible with 3.3 V MCU outputs.
Body Control Module (BCM) Peripheral Switching	Automotive Telematics Power Sequencing
Use Scenario: Enabling auxiliary functions like door lock actuators or mirror heaters in BCMs with tight PCB space constraints. IC Role / Device Role / Timing Role: High-side or low-side discrete switch managing sub-500 mA loads with built-in thermal protection via junction temperature derating. Use Value: Supports 0.32 A continuous current at 25 °C and maintains functionality up to 175 °C TJ, eliminating need for external thermal monitoring.	Use Scenario: Sequencing power to GPS/GSM modules during vehicle ignition cycles where inrush current must be limited. IC Role / Device Role / Timing Role: Soft-start switch controlling ramp-up of downstream LDOs or DC-DC converters using gate capacitance timing. Use Value: Leverages 0.9–1.4 nC total gate charge to enable controlled turn-on slew rate and reduce peak inrush current.

Automotive LED Lighting Control

Engine Control Unit (ECU) Sensor Biasing

Use Scenario: Switching low-current bias voltage for position sensors or Hall-effect ICs in engine compartments where ambient temperatures exceed 125 °C.

IC Role / Device Role / Timing Role: Low-side load switch providing controlled power enable/disable with minimal leakage (<1 µA at 60 V, 25 °C).

Use Value: Ensures sensor reliability under thermal stress while maintaining <1.30 Ω on-resistance to minimize voltage drop and self-heating.

Use Scenario: Driving indicator LEDs on dashboard clusters requiring stable dimming control and fault-tolerant shutdown.

IC Role / Device Role / Timing Role: Constant-current sink switch enabling PWM-based brightness adjustment with fast turn-on/off times (≤22 ns td(on)).

Use Value: Delivers precise current regulation with <1.90 Ω R_DS(on) at 4.5 V V_GS, compatible with 3.3 V MCU outputs.

Body Control Module (BCM) Peripheral Switching

Automotive Telematics Power Sequencing

Use Scenario: Enabling auxiliary functions like door lock actuators or mirror heaters in BCMs with tight PCB space constraints.

IC Role / Device Role / Timing Role: High-side or low-side discrete switch managing sub-500 mA loads with built-in thermal protection via junction temperature derating.

Use Value: Supports 0.32 A continuous current at 25 °C and maintains functionality up to 175 °C TJ, eliminating need for external thermal monitoring.

Use Scenario: Sequencing power to GPS/GSM modules during vehicle ignition cycles where inrush current must be limited.

IC Role / Device Role / Timing Role: Soft-start switch controlling ramp-up of downstream LDOs or DC-DC converters using gate capacitance timing.

Use Value: Leverages 0.9–1.4 nC total gate charge to enable controlled turn-on slew rate and reduce peak inrush current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 1.2 Ω @ 4.5 V; slightly lower threshold (0.5–1.2 V); same SOT-23 package.	Better suited for 3.3 V logic drive with tighter V_GS(th) distribution; higher gate leakage (±100 nA).	Select when driving from weak-sourcing MCUs or where faster turn-on at low V_GS is prioritized over leakage.
SI2302DS-T1-GE3	R_DS(on) = 0.08 Ω @ 4.5 V; higher ID (2.6 A); same SOT-23 but optimized for higher current.	Designed for higher-power loads; not AEC-Q101 qualified; lower max T_J (150 °C).	Choose only for non-automotive, commercial-grade applications requiring lower conduction loss and higher current capacity.

Compared with DMN2004LK-7 and SI2302DS-T1-GE3, the SQ7002K-T1-GE3 uniquely balances AEC-Q101 compliance, 175 °C operation, and moderate R_DS(on) in SOT-23-making it optimal for thermally demanding yet low-current automotive subsystems where qualification and reliability outweigh raw performance.

Availability

SQ7002K-T1-GE3 is available at Aetrix Electronics and suitable for automotive LED control, ECU sensor biasing, and BCM peripheral switching requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQ7002K-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability power and signal components for automotive, industrial, and computing markets.

The SQ7002K-T1-GE3 belongs to Vishay's TrenchFET® automotive-qualified MOSFET family, engineered specifically for low-current, high-temperature switching in space-constrained automotive electronics where AEC-Q101 validation and thermal robustness are mandatory.

FAQ

What is the maximum continuous drain current for SQ7002K-T1-GE3 at 125 °C case temperature?

The SQ7002K-T1-GE3 supports 0.24 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package and ensures safe operation within its 175 °C maximum junction temperature rating. The SQ7002K-T1-GE3 must be used with appropriate PCB copper area to maintain this current capability.

Is SQ7002K-T1-GE3 suitable for 3.3 V microcontroller gate drive?

Yes, SQ7002K-T1-GE3 has a gate threshold voltage range of 1.0–2.5 V and delivers 1.90 Ω R_DS(on) at 4.5 V V_GS, ensuring reliable turn-on with 3.3 V logic. Its 0.9–1.4 nC total gate charge further reduces driver loading. The SQ7002K-T1-GE3 is commonly deployed with 3.3 V MCUs in automotive body control modules without level-shifting circuitry.

Does SQ7002K-T1-GE3 have an integrated body diode, and what is its forward voltage?

Yes, SQ7002K-T1-GE3 includes a parasitic body diode with a typical forward voltage of 0.83 V at IF = 0.2 A and VGS = 0 V, as specified in the Source-Drain Diode Characteristics table. This diode enables freewheeling in inductive loads and reverse-polarity protection in low-power bias networks. The SQ7002K-T1-GE3 body diode is not optimized for high-frequency recovery but suffices for DC and low-frequency switching.

What is the thermal resistance from junction to ambient for SQ7002K-T1-GE3 on a standard PCB?

The junction-to-ambient thermal resistance (R_thJA) for SQ7002K-T1-GE3 is 350 °C/W when mounted on a 1" square FR-4 PCB with 2 oz. copper on both sides. This value assumes standard SOT-23 mounting per JEDEC standards and directly determines allowable power dissipation: for a 50 °C temperature rise, max PD ≈ 143 mW. The SQ7002K-T1-GE3 thermal performance is consistent across production lots per Vishay's characterization.

How does the AEC-Q101 qualification impact SQ7002K-T1-GE3 usage in automotive designs?

AEC-Q101 qualification confirms SQ7002K-T1-GE3 has passed accelerated stress tests-including temperature cycling, high-temperature gate bias, and ESD-required for automotive semiconductor components. This allows direct use in safety-critical and under-hood applications without additional qualification effort. The SQ7002K-T1-GE3 qualification status is documented in Vishay's reliability report for document number 65547.

SQ7002K-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 320mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.3Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.4 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 24 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ7002K-T1-GE3 FAQ

1.How can I place an order for SQ7002K-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ7002K-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ7002K-T1-GE3 reliable?

The price and inventory of SQ7002K-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ7002K-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SQ7002K-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ7002K-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ7002K-T1-GE3?

SQ7002K-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ7002K-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ7002K-T1-GE3?

For technical support, including SQ7002K-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ7002K-T1-GE3 requirements.

6.How does Aetrix verify that SQ7002K-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SQ7002K-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ7002K-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SQ7002K-T1-GE3?

All SQ7002K-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ7002K-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ7002K-T1-GE3 part is unused and in its original packaging.

Return procedure for SQ7002K-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…