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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQAA42CEJW-T1_GE3

Name: SQAA42CEJW-T1_GE3
Brand: Vishay Siliconix
SKU: SQAA42CEJW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQAA42CEJW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SQAA42CEJW-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 60V (D-S)

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Product details

Overview

SQAA42CEJW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V (D–S), with R_DS(on) = 0.030 Ω at V_GS = 10 V and 4.5 A, 175 °C junction operation, and wettable flank PowerPAK® SC-70W-6L packaging - used in high-reliability DC-DC converter high-side switches and motor gate drivers.

For engineers reviewing the SQAA42CEJW-T1_GE3 datasheet, SQAA42CEJW-T1_GE3 pinout, SQAA42CEJW-T1_GE3 application, or SQAA42CEJW-T1_GE3 equivalent, this page delivers verified package mapping, AEC-Q101 qualification status, thermal resistance (R_thJC = 11 °C/W), body diode recovery metrics (t_rr = 16–32 ns), and validated alternatives for automotive power stage design.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) and fast switching in space-constrained automotive modules. It supports 10 A continuous drain current at T_C = 25 °C and maintains stable threshold voltage (V_GS(th) = 1.5–2.5 V) across -55 to +175 °C.

The device integrates 100 % R_g and UIS testing per unit, features a 0.96 Ω typical gate resistance, and delivers Q_g = 7.5–12 nC at V_GS = 10 V with t_d(on)/t_r/t_d(off)/t_f = 7–12 / 3–6 / 13–20 / 3–6 ns under defined test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 12 V/24 V automotive bus protection and buck converter primary side.
R_DS(on) @ V_GS = 10 V	0.030 Ω - Enables ≤1.36 W conduction loss at 6.6 A, supporting thermally constrained PCB layouts.
I_D (continuous)	10 A @ T_C = 25 °C - Sustains peak load currents in e-fuse and BLDC gate drive applications without derating.
Q_g	7.5–12 nC - Low gate charge reduces driver power demand and enables efficient 100–500 kHz PWM operation.
t_rr (body diode)	16–32 ns - Minimizes reverse recovery losses during synchronous rectification and freewheeling.
R_thJC	11 °C/W - Enables direct thermal coupling to heatsink or copper pour for high-power density designs.
T_J max	+175 °C - Qualified for under-hood environments including engine control units and ADAS power supplies.

Pinout & Package

Package: PowerPAK® SC-70W-6L - leadless, wettable flank terminals, 2.05 mm × 2.05 mm footprint, 0.5 mm height, tin-plated flanks for automated optical solder-joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5 (Drain)	Power Drain (common source connection)	Four parallel drain terminals reduce current density and improve thermal spreading into PCB copper.
3 (Gate)	Control Input	Single gate terminal with 0.96 Ω typical R_g; requires <12 nC drive for full enhancement.
6, 7 (Source)	Power Source / Reference Node	Dual-source terminals provide low-inductance return path and support Kelvin sensing in precision current monitoring.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics per stress test requirements - supports PPAP and functional safety documentation.
Wettable flank terminals	Enables AOI-compatible solder joint inspection on bottom-side terminations without X-ray.
100 % R_g and UIS tested	Guarantees gate robustness and avalanche energy handling (E_AS = 5.51 mJ) per unit - no screening failures in production.
TrenchFET® architecture	Delivers 30 % lower R_DS(on) vs. planar MOSFETs at same die size - improves power density in compact modules.
Body diode Q_rr = 8–16 nC	Reduces switching loss in hard-commutated topologies and enables reliable bidirectional current flow in H-bridge legs.

Applications

Automotive DC-DC Converters	Engine Control Unit (ECU) Power Switching
Use Scenario: 48 V–12 V bidirectional buck-boost converter in mild hybrid vehicles. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250 kHz with forced commutation. Use Value: 0.030 Ω R_DS(on) minimizes conduction loss at 10 A load; 175 °C rating allows placement near heat sources.	Use Scenario: Solenoid and injector driver output stage in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Low-side load switch with integrated body diode freewheeling. Use Value: 32 ns t_rr limits voltage overshoot during turn-off; AEC-Q101 ensures reliability over 15-year vehicle lifetime.
ADAS Camera Power Supply	Electric Power Steering (EPS) Gate Driver
Use Scenario: Compact 5 V/3 A point-of-load regulator for CMOS image sensors and ISP processors. IC Role / Device Role / Timing Role: Secondary-side synchronous MOSFET in isolated flyback topology. Use Value: Wettable flanks enable post-reflow solder joint verification; 90 °C/W R_thJA supports fanless enclosure design.	Use Scenario: Half-bridge high-side switch in three-phase EPS motor gate driver IC auxiliary supply. IC Role / Device Role / Timing Role: Fast-switching power switch controlling bootstrap capacitor recharge path. Use Value: 7 ns t_d(on) and 3 ns t_r ensure precise timing alignment with complementary low-side devices.

Automotive DC-DC Converters

Engine Control Unit (ECU) Power Switching

Use Scenario: 48 V–12 V bidirectional buck-boost converter in mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250 kHz with forced commutation.

Use Value: 0.030 Ω R_DS(on) minimizes conduction loss at 10 A load; 175 °C rating allows placement near heat sources.

Use Scenario: Solenoid and injector driver output stage in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Low-side load switch with integrated body diode freewheeling.

Use Value: 32 ns t_rr limits voltage overshoot during turn-off; AEC-Q101 ensures reliability over 15-year vehicle lifetime.

ADAS Camera Power Supply

Electric Power Steering (EPS) Gate Driver

Use Scenario: Compact 5 V/3 A point-of-load regulator for CMOS image sensors and ISP processors.

IC Role / Device Role / Timing Role: Secondary-side synchronous MOSFET in isolated flyback topology.

Use Value: Wettable flanks enable post-reflow solder joint verification; 90 °C/W R_thJA supports fanless enclosure design.

Use Scenario: Half-bridge high-side switch in three-phase EPS motor gate driver IC auxiliary supply.

IC Role / Device Role / Timing Role: Fast-switching power switch controlling bootstrap capacitor recharge path.

Use Value: 7 ns t_d(on) and 3 ns t_r ensure precise timing alignment with complementary low-side devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N06LS	R_DS(on) = 0.0014 Ω @ 10 V, but larger PowerPAK SO-8 package (5.15 × 6.2 mm); higher Q_g = 27 nC.	Better conduction efficiency at >20 A, but unsuitable for ultra-compact layouts requiring SC-70W footprint.	Select when thermal budget permits larger package and lower R_DS(on) dominates over switching loss.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 0.0039 Ω @ 10 V, PowerTrench® 5x6 mm SO-8FL; t_rr = 45 ns - slower body diode.	Higher current capability (60 A), but longer reverse recovery increases EMI in high-frequency converters.	Prefer for high-current, lower-frequency (<100 kHz) motor drives where diode speed is non-critical.

Compared with BSC014N06LS and NTMFS4C09NT1G, SQAA42CEJW-T1_GE3 offers optimal balance of ultra-small footprint, fast body diode, and AEC-Q101 compliance - making it uniquely suited for space- and timing-constrained automotive subsystems below 10 A.

Availability

SQAA42CEJW-T1_GE3 is available at Aetrix Electronics and suitable for automotive DC-DC converters, engine control units, and ADAS camera power supplies requiring stable component supply across extended temperature and lifecycle demands.

Supply support for SQAA42CEJW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQAA42CEJW-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK® SC-70W family - engineered for high-density, high-temperature power switching in next-generation vehicle electrification systems.

FAQ

What is the maximum junction temperature rating for SQAA42CEJW-T1_GE3?

The SQAA42CEJW-T1_GE3 is rated for a maximum junction temperature of +175 °C and is AEC-Q101 qualified for automotive under-hood use. Its R_thJC of 11 °C/W enables effective thermal transfer to the PCB or heatsink, and its electrical parameters - including R_DS(on) and V_GS(th) - are characterized up to this temperature limit per the official Vishay datasheet S23-0817-Rev. A.

Is SQAA42CEJW-T1_GE3 pin-compatible with other PowerPAK SC-70W-6L MOSFETs?

SQAA42CEJW-T1_GE3 uses the standard PowerPAK SC-70W-6L pinout: pins 1/2/4/5 are Drain, pin 3 is Gate, and pins 6/7 are Source. This layout matches industry-standard SC-70W-6L footprints, but electrical compatibility - especially R_DS(on), Q_g, and body diode performance - must be verified per application; SQAA42CEJW-T1_GE3 is not guaranteed as a drop-in replacement for unrelated variants.

Does SQAA42CEJW-T1_GE3 include integrated ESD protection?

The SQAA42CEJW-T1_GE3 does not specify integrated ESD protection circuitry in its datasheet. It relies on external layout practices and system-level TVS components for ESD robustness. Its gate oxide is rated for ±20 V V_GS, and the device undergoes 100 % R_g testing - but no HBM or CDM ESD ratings are published for SQAA42CEJW-T1_GE3.

What is the body diode forward voltage of SQAA42CEJW-T1_GE3 at 4.5 A?

The body diode forward voltage (V_SD) of SQAA42CEJW-T1_GE3 is specified as 0.85–1.2 V at I_F = 4.5 A and V_GS = 0 V, measured at T_A = 25 °C. This low V_SD range contributes to reduced freewheeling loss in synchronous rectifier and H-bridge configurations.

Can SQAA42CEJW-T1_GE3 be used in 48 V automotive systems?

Yes - SQAA42CEJW-T1_GE3 has a 60 V V_DS rating and is AEC-Q101 qualified, making it suitable for 48 V nominal systems where transient overvoltages remain within its absolute maximum rating. Its 175 °C operation and wettable flank package further support deployment in demanding 48 V battery management and DC-DC conversion stages.

SQAA42CEJW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 590 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 13.6W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerPAK®SC-70W-6

SQAA42CEJW-T1_GE3 FAQ

1.How can I place an order for SQAA42CEJW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQAA42CEJW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQAA42CEJW-T1_GE3 reliable?

The price and inventory of SQAA42CEJW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQAA42CEJW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQAA42CEJW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQAA42CEJW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQAA42CEJW-T1_GE3?

SQAA42CEJW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQAA42CEJW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQAA42CEJW-T1_GE3?

For technical support, including SQAA42CEJW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQAA42CEJW-T1_GE3 requirements.

6.How does Aetrix verify that SQAA42CEJW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQAA42CEJW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQAA42CEJW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQAA42CEJW-T1_GE3?

All SQAA42CEJW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQAA42CEJW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQAA42CEJW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQAA42CEJW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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