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Vishay Siliconix SQD07N25-350H_GE3
- Part No.:
- SQD07N25-350H_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD07N25-350H_GE3.pdf
- Description:
- MOSFET N-CH 250V 7A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,030
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Product details
Overview
SQD07N25-350H_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 250 V VDS, 0.350 Ω RDS(on) at VGS = 10 V, and 7 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is housed in a TO-252 (DPAK) package with drain-connected tab, targeting high-reliability DC-DC converters and motor control circuits in under-hood automotive systems.
For engineers reviewing the SQD07N25-350H_GE3 datasheet, SQD07N25-350H_GE3 pinout, SQD07N25-350H_GE3 application, or SQD07N25-350H_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS tested status, thermal resistance of 2.1 °C/W (Junction-to-Case), and guaranteed RDS(on) performance across -55 °C to +175 °C.
Technical Context
This MOSFET employs Vishay's TrenchFET® process for low on-resistance and optimized switching characteristics. Its gate threshold voltage (2.5–3.5 V) enables robust drive compatibility with 3.3 V and 5 V microcontrollers, while the 19–29 nC total gate charge supports efficient high-frequency switching in SMPS topologies.
The device features integrated body diode with 0.9–1.5 V forward voltage at 20 A and is rated for single-pulse avalanche energy of 2.4 mJ. Thermal design is supported by validated RthJC = 2.1 °C/W and RthJA = 50 °C/W (on 1"² FR4 PCB), enabling stable operation in thermally constrained automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - Withstands transient overvoltages up to 250 V in 12 V/24 V automotive battery systems without breakdown. |
| RDS(on) @ VGS = 10 V | 0.350 Ω max - Ensures ≤ 24.5 W conduction loss at 7 A, critical for thermal management in sealed enclosures. |
| ID (continuous, TC = 25 °C) | 7 A - Supports medium-power loads such as radiator fan drivers and fuel pump controllers. |
| TJ operating range | -55 to +175 °C - Validated for under-hood placement near engines and exhaust systems per AEC-Q101 stress testing. |
| Qg (total gate charge) | 19–29 nC - Enables <15 ns turn-on delay and <12 ns rise time with 1 Ω gate resistor, reducing switching losses in 100–500 kHz converters. |
| EAS | 2.4 mJ - Provides ruggedness against inductive kickback in relay and solenoid drive applications without external snubbers. |
| RthJC | 2.1 °C/W - Allows direct heatsinking via drain-tab mounting, supporting >50 W power dissipation with minimal thermal interface resistance. |
Pinout & Package
Package: TO-252AA (DPAK), surface-mount, drain-connected metal tab. Dimensions per Vishay outline DWG 6019: D = 6.09 mm, E = 6.54 mm, H = 9.90 mm, tab area ≈ 4.1 × 4.3 mm. Requires recommended minimum copper pad (10.67 × 5.69 mm) per Application Note 826 for optimal thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Left, G) | Gate | High-impedance MOSFET control terminal; requires <1 Ω series resistance to suppress ringing during fast switching. |
| Pin 2 (Center, S) | Source | Power return path and reference node for gate drive; must be low-inductance connection to ground plane. |
| Pin 3 (Right, D) | Drain | Main power output terminal; electrically connected to exposed metal tab for thermal and electrical conduction to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including HTOL, TC, UHAST, and ESD testing - eliminates need for customer requalification in Tier-1 modules. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency (0.35–3 Ω) and unclamped inductive switching robustness - ensures field reliability in motor commutation. |
| TrenchFET® technology | Enables 0.290 Ω typical RDS(on) at 10 A/25 °C - reduces conduction loss by ≥18 % vs. planar MOSFETs in same package. |
| Low RthJC (2.1 °C/W) | Enables >70 % of total power dissipation to transfer directly from die to heatsink - critical for compact engine-control units. |
| Drain-connected tab | Provides dual-function mechanical attachment and low-impedance thermal path - simplifies thermal design and eliminates separate drain trace routing. |
Applications
| Engine Control Module (ECM) | Electric Power Steering (EPS) |
|---|---|
Use Scenario: High-side switch for 12 V solenoid actuation in variable valve timing (VVT) oil control valves. IC Role / Device Role / Timing Role: Power switch controlling hydraulic oil flow; duty-cycled at 10–100 Hz with 100 ms on-time. Use Value: 250 V rating withstands load-dump transients; 175 °C operation survives proximity to cylinder head; RDS(on) stability ensures consistent torque response across temperature. |
Use Scenario: Low-side driver for brushless DC motor phase winding in column-assist EPS systems. IC Role / Device Role / Timing Role: Synchronous rectifier in 3-phase inverter bridge; switched at 20–40 kHz PWM frequency. Use Value: 19–29 nC Qg enables efficient gate driving with low-power MCU GPIO; 2.4 mJ EAS absorbs back-EMF during regenerative braking. |
| Body Control Module (BCM) | DC-DC Converter (12 V → 5 V) |
Use Scenario: Load switch for rear-window defogger heating elements (15 A peak, intermittent duty). IC Role / Device Role / Timing Role: High-current power distribution switch with overcurrent protection coordination. Use Value: 50 A pulsed source current (IS) supports diode conduction during reverse polarity events; AEC-Q101 qualification ensures 15-year field life. |
Use Scenario: Primary-side synchronous rectifier in isolated flyback converter powering infotainment USB ports. IC Role / Device Role / Timing Role: Secondary-side MOSFET replacing Schottky diode to improve efficiency above 3 A load. Use Value: 0.350 Ω RDS(on) cuts conduction loss by 65 % vs. 40 V/5 A Schottky; TO-252 thermal performance sustains >85 % efficiency at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 250 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP7NK25Z | Higher RDS(on) (0.42 Ω typ), no AEC-Q101 qualification, TO-220 package. | Limited to non-automotive industrial controls; lacks under-hood thermal margin and automotive stress screening. | Use only where cost is primary constraint and AEC-Q101 compliance is not required. |
| IXTP7N25P | Lower ID (6.5 A), higher Qg (35 nC), TO-220FP package, no UIS testing. | Suitable for lower-frequency (<50 kHz), lower-duty-cycle applications; less robust in inductive switching. | Prefer when board space allows through-hole mounting and thermal mass compensates for higher RthJA. |
Compared with STP7NK25Z and IXTP7N25P, the SQD07N25-350H_GE3 delivers superior thermal performance (RthJC = 2.1 °C/W), guaranteed automotive qualification, and lower switching losses - making it the preferred choice for space-constrained, high-reliability automotive power stages.
Availability
SQD07N25-350H_GE3 is available at Aetrix Electronics and suitable for engine control modules, electric power steering systems, and body control units requiring stable component supply across extended automotive product lifecycles.
Supply support for SQD07N25-350H_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQD07N25-350H_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine bay and chassis-mounted electronic control units.
FAQ
What is the maximum continuous drain current for SQD07N25-350H_GE3 at 125 °C case temperature?
The SQD07N25-350H_GE3 supports 4 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and ensures safe operation within its 175 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain TC ≤ 125 °C under full-load conditions.
Is SQD07N25-350H_GE3 suitable for use in a 48 V mild-hybrid automotive system?
Yes, the SQD07N25-350H_GE3 is suitable for 48 V mild-hybrid applications due to its 250 V VDS rating, which provides ample margin against load-dump transients (up to ISO 7637-2 Pulse 5a: 110 V) and inductive spikes. Its AEC-Q101 qualification and 175 °C operation further confirm suitability for under-hood deployment in such systems.
Does SQD07N25-350H_GE3 have an integrated ESD protection diode on the gate?
No, the SQD07N25-350H_GE3 does not include an integrated gate ESD protection diode. Its gate-source leakage (±100 nA at ±30 V) and gate-threshold specification assume external handling per JEDEC JS-001 Class 2 (≥2 kV HBM). Designers must implement external gate protection (e.g., Zener clamp) in high-noise environments like engine compartments.
What is the typical gate resistance (Rg) value for SQD07N25-350H_GE3, and how does it affect switching behavior?
The SQD07N25-350H_GE3 has a specified gate resistance range of 0.35–3 Ω (measured at 1 MHz). This low Rg minimizes gate-drive power loss and supports fast switching transitions - evidenced by its 9–14 ns turn-on delay and 4–6 ns fall time. External gate resistors (typically 1–10 Ω) are still recommended to dampen ringing and control dV/dt in high-side configurations.
How does the RDS(on) of SQD07N25-350H_GE3 change with temperature, and what is its impact on thermal design?
The RDS(on) of SQD07N25-350H_GE3 increases with junction temperature: 0.350 Ω max at 25 °C, rising to 0.858 Ω at 125 °C and 1.250 Ω at 175 °C. This positive temperature coefficient aids current sharing in paralleled configurations but requires thermal design to limit TJ - especially in high-duty-cycle applications - to avoid runaway conduction losses.
SQD07N25-350H_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 350mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1205 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 71W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SQD07N25-350H_GE3 FAQ
1.How can I place an order for SQD07N25-350H_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQD07N25-350H_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQD07N25-350H_GE3 reliable?
The price and inventory of SQD07N25-350H_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQD07N25-350H_GE3 is usually 5 days.
3.What payment methods are accepted for SQD07N25-350H_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQD07N25-350H_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQD07N25-350H_GE3?
SQD07N25-350H_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQD07N25-350H_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQD07N25-350H_GE3?
For technical support, including SQD07N25-350H_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQD07N25-350H_GE3 requirements.
6.How does Aetrix verify that SQD07N25-350H_GE3 is sourced from the original manufacturer or authorized distributors?
All SQD07N25-350H_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQD07N25-350H_GE3 meets industry standards.
7.What is the process for return or replacement of SQD07N25-350H_GE3?
All SQD07N25-350H_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQD07N25-350H_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQD07N25-350H_GE3 part is unused and in its original packaging.
Return procedure for SQD07N25-350H_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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