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Vishay Siliconix SQJ164ELP-T1_GE3
- Part No.:
- SQJ164ELP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ164ELP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 60 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:5,968
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Product details
Overview
SQJ164ELP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET with 60 V VDS, 12 mΩ RDS(on) at 10 VGS, and 75 A continuous drain current at TC = 25 °C, designed for high-efficiency DC-DC converters and motor control in under-hood automotive systems.
For engineers reviewing the SQJ164ELP-T1_GE3 datasheet, SQJ164ELP-T1_GE3 pinout, SQJ164ELP-T1_GE3 application, or SQJ164ELP-T1_GE3 equivalent, this device delivers AEC-Q101 qualification, 175 °C junction temperature capability, and low gate charge (38 nC typical) for fast switching in space-constrained power stages.
Technical Context
This MOSFET employs a trench-based silicon structure optimized for low conduction loss and robust avalanche performance, with 48 mJ single-pulse avalanche energy and 100% UIS testing. Its thermal design targets high-power density mounting on FR4 PCBs with 1"² copper area.
The device operates with gate threshold voltage of 1.5–2.5 V and exhibits stable RDS(on) up to 175 °C (0.033 Ω max at 10 VGS, 15 A, TJ = 175 °C), enabling reliable operation in engine compartment environments without derating penalties typical of lower-temperature-rated MOSFETs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V automotive architectures and transient clamping up to ISO 7637-2 Pulse 5a. |
| RDS(on) @ 10 VGS | 0.012 Ω - Enables <1 W conduction loss at 75 A, critical for minimizing heatsink size in high-current 12/24/48 V systems. |
| ID (continuous) | 75 A @ TC = 25 °C - Supports high-current load switching in starter relays, battery disconnect units, and HVAC blowers. |
| Qg | 38 nC typical - Reduces gate drive power and enables use with low-current controllers like microcontroller GPIOs or small gate drivers. |
| TJ range | –55 to +175 °C - Certified for under-hood placement without external thermal shielding in modern electric and hybrid vehicles. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics, including temperature cycling, HTRB, and UHAST. |
| RthJC | 0.8 °C/W - Enables direct thermal coupling to metal-core PCBs or heatsinks for efficient heat extraction in compact modules. |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), thermally enhanced 8-lead surface-mount package with exposed drain paddle on bottom side for low-junction-to-case thermal resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection across six internal paralleled die; low-inductance return path for high di/dt switching. |
| 5 | Gate (G) | Control terminal with 1.8 Ω typical gate resistance; requires <10 V drive for full enhancement and minimal Miller plateau time. |
| 6 | Drain (D) | High-current output terminal tied to exposed copper paddle; primary thermal path to PCB copper pour or heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 12% lower RDS(on) vs. prior generation at same die size, improving power density in space-limited ECUs. |
| 100% Rg and UIS tested | Ensures gate robustness against ESD and system-level overvoltage transients without additional protection circuitry. |
| Body diode trr = 21–42 ns | Reduces reverse recovery losses in synchronous rectification and half-bridge configurations, lowering overall system EMI. |
| Exposed drain paddle | Provides 0.8 °C/W junction-to-case thermal path-enables >150 W dissipation with 2 oz. copper and 1"² pad area. |
| Lead-free and RoHS-compliant | Meets automotive ELV Directive and supports Pb-free reflow profiles up to 260 °C peak soldering temperature. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild Hybrid Battery Disconnect Switch |
|---|---|
Use Scenario: High-speed, high-current switching of fuel injectors in gasoline direct injection systems with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; handles repetitive 75 A pulsed loads with <17 ns turn-off delay. Use Value: 0.012 Ω RDS(on) minimizes I²R heating during extended idle-stop cycles, extending injector driver lifetime. |
Use Scenario: Isolating 48 V battery banks during fault conditions or maintenance in 48 V PHEV architectures. IC Role / Device Role / Timing Role: Main power FET in bidirectional contactor replacement; sustains 75 A continuous with 175 °C junction rating. Use Value: AEC-Q101 qualification and 48 mJ avalanche energy enable safe interruption of inductive battery faults without external snubbers. |
| Electric Power Steering (EPS) Motor Phase Leg | Onboard Charger (OBC) Primary-Side Switch |
Use Scenario: Half-bridge high-side/low-side switching in 3-phase EPS inverters operating at 10–20 kHz PWM. IC Role / Device Role / Timing Role: Low-side MOSFET in phase-leg configuration; leverages fast 6 ns rise time and low Qgd (6 nC) for reduced switching loss. Use Value: 38 nC total gate charge allows direct drive from standard 3.3 V or 5 V gate drivers, simplifying isolated gate bias design. |
Use Scenario: Primary-side switching in LLC resonant converters for EV onboard chargers handling up to 11 kW. IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable power switch; benefits from low Coss (202–283 pF) and stable RDS(on) over temperature. Use Value: 0.013 Ω RDS(on) at 4.5 VGS supports 3.3 V logic-level drive in auxiliary control circuits, reducing gate driver BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | Higher RDS(on) (1.8 mΩ min at 10 VGS, but 2.2 mΩ typical); larger PowerFLAT 5x6 package; no AEC-Q101 documentation in public datasheet. | Targeted at industrial motor drives; lacks documented automotive qualification and 175 °C operation. | Select when cost sensitivity outweighs AEC-Q101 compliance and thermal margin requirements. |
| IRF100N04S4-1P | Lower voltage rating (40 V); TO-252 package; RDS(on) = 1.4 mΩ at 10 VGS; not AEC-Q101 qualified. | Suitable only for 12/24 V non-critical systems; unsuitable for 48 V or under-hood thermal environments. | Choose only for legacy 12 V chassis applications where 60 V rating and 175 °C operation are unnecessary. |
Compared with STL220N6F7AG and IRF100N04S4-1P, SQJ164ELP-T1_GE3 provides verified AEC-Q101 compliance, superior thermal capability (175 °C vs. 150 °C), and lower gate charge-making it the only option qualified for next-generation 48 V mild hybrid power distribution modules requiring zero derating at peak ambient temperature.
Availability
SQJ164ELP-T1_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, electric power steering, and 48 V battery management systems requiring stable component supply across multi-year vehicle production lifecycles.
Supply support for SQJ164ELP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ164ELP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in engine bay and battery systems where AEC-Q101 reliability and thermal resilience are mandatory.
FAQ
What is the maximum continuous drain current rating for SQJ164ELP-T1_GE3 at 125 °C case temperature?
The SQJ164ELP-T1_GE3 supports 43 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits of the PowerPAK SO-8L package under real-world PCB thermal conditions and ensures long-term reliability in high-ambient automotive environments.
Does SQJ164ELP-T1_GE3 have integrated ESD protection on the gate terminal?
SQJ164ELP-T1_GE3 does not include on-die ESD protection structures. However, it undergoes 100% Rg testing per AEC-Q101, verifying gate oxide integrity against human-body-model (HBM) and charged-device-model (CDM) events during manufacturing. External gate protection remains recommended in high-noise automotive harness environments.
Can SQJ164ELP-T1_GE3 be used in synchronous rectification topologies?
Yes, SQJ164ELP-T1_GE3 is suitable for synchronous rectification due to its low RDS(on) (12 mΩ at 10 VGS) and fast body diode recovery (trr = 21–42 ns). Its low Qrr (18–36 nC) and soft recovery characteristics reduce switching loss and EMI in forward and LLC converters.
What is the gate-source voltage limit for SQJ164ELP-T1_GE3, and is negative VGS allowed?
The SQJ164ELP-T1_GE3 has a gate-source voltage limit of ±20 V, meaning –20 V to +20 V is permissible. Negative VGS is allowed and commonly used during active gate control to ensure rapid turn-off and prevent spurious turn-on in high-dV/dt environments such as motor drives.
Is the exposed drain paddle on SQJ164ELP-T1_GE3 electrically connected to any pin?
Yes, the exposed drain paddle on SQJ164ELP-T1_GE3 is internally connected to Pin 6 (Drain) and must be soldered to a PCB copper pour designated as the main power ground or high-current return path. It is not isolated and serves as both the primary thermal and electrical drain connection.
SQJ164ELP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 57 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 187W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ164ELP-T1_GE3 FAQ
1.How can I place an order for SQJ164ELP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ164ELP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ164ELP-T1_GE3 reliable?
The price and inventory of SQJ164ELP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ164ELP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ164ELP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ164ELP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ164ELP-T1_GE3?
SQJ164ELP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ164ELP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ164ELP-T1_GE3?
For technical support, including SQJ164ELP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ164ELP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ164ELP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ164ELP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ164ELP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ164ELP-T1_GE3?
All SQJ164ELP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ164ELP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ164ELP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ164ELP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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