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Vishay Siliconix SQJ170ELP-T1_GE3
- Part No.:
- SQJ170ELP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ170ELP-T1_GE3.pdf
- Description:
- N-CHANNEL 60-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:6,174
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Product details
Overview
SQJ170ELP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV MOSFET with 60 V VDS, 0.0163 Ω RDS(on) at 10 VGS, 63 A continuous drain current at TC = 25 °C, and AEC-Q101 qualification for under-hood power switching in 12 V/48 V systems.
For engineers reviewing the SQJ170ELP-T1_GE3 datasheet, SQJ170ELP-T1_GE3 pinout, SQJ170ELP-T1_GE3 application, or SQJ170ELP-T1_GE3 equivalent, key selection criteria include its 175 °C junction rating, 1.1 °C/W RthJC, 12 nC total gate charge, and PowerPAK SO-8L package optimized for high-current DC/DC and motor control layouts.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance while maintaining robust avalanche capability (EAS = 17.1 mJ) and 100 % UIS testing. Its gate threshold voltage (1.5–2.5 V) supports 3.3 V and 5 V logic-level drive in automotive body control modules.
The device integrates a fast-recovery body diode (trr = 20–40 ns, Qrr = 12–24 nC) and exhibits stable RDS(on) up to 175 °C, enabling operation in high-temperature engine bay environments without derating beyond datasheet limits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 12 V automotive battery systems with load dump protection margin |
| RDS(on) @ 10 VGS | 0.0163 Ω - Enables <1 W conduction loss at 63 A, critical for high-efficiency power distribution units |
| ID (continuous) | 63 A @ TC = 25 °C - Supports high-current solenoid drivers and HVAC blower motors without external heatsinking |
| Qg | 12 nC - Low gate charge reduces driver power and enables fast switching in 100–500 kHz DC/DC converters |
| RthJC | 1.1 °C/W - Allows direct thermal coupling to PCB copper or heatsink for sustained 45 W power dissipation at 125 °C case temperature |
| AEC-Q101 | Qualified - Meets automotive stress test requirements for temperature cycling, HTRB, and ESD, enabling use in ASIL-B systems |
| TJ range | −55 to +175 °C - Rated for under-hood placement in modern electric power steering and battery disconnect applications |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), thermally enhanced 8-lead surface-mount package with exposed drain paddle on bottom side for optimal heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection; pins 1–4 and 7–8 are internally tied to reduce source inductance in high-di/dt switching |
| 5 | Gate (G) | Single gate input; low 1.3 Ω typical gate resistance minimizes ringing and simplifies gate driver design |
| 6 | Drain (D) | Main power output terminal; connected to large internal copper paddle for low-inductance, high-current path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers 25 % lower RDS(on) vs. prior generation at same die size, improving power density in space-constrained ECUs |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and guarantees avalanche energy handling for inductive load switching |
| Exposed drain paddle | Enables <1.1 °C/W junction-to-case thermal resistance when soldered to ≥1 in² 2 oz. copper area, reducing thermal derating |
| Low Qgd/Qg ratio | 0.17 (2 nC / 12 nC) - Minimizes Miller plateau time, enhancing hard-switching efficiency and EMI performance |
| Body diode trr | 20–40 ns - Reduces reverse recovery losses in synchronous rectification and half-bridge topologies |
Applications
| Automotive Body Control Module (BCM) | 48 V Mild Hybrid DC/DC Converter |
|---|---|
Use Scenario: High-side power switch for headlamp, fog lamp, and radiator fan loads in centralized BCMs. IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver IC; operates in on/off mode with <100 μs turn-on delay. Use Value: 175 °C rating allows placement near engine compartment electronics; low RDS(on) eliminates need for parallel devices in 30 A lamp circuits. |
Use Scenario: Primary-side synchronous rectifier in 3 kW bi-directional DC/DC converter linking 48 V and 12 V domains. IC Role / Device Role / Timing Role: Low-side switching element in phase-shifted full-bridge topology; driven at 200 kHz with zero-voltage switching. Use Value: 12 nC Qg and 0.0163 Ω RDS(on) enable >97 % conversion efficiency; AEC-Q101 ensures reliability across 15-year vehicle lifetime. |
| Electric Power Steering (EPS) Motor Driver | Battery Disconnect Switch (BMS) |
Use Scenario: Half-bridge leg in three-phase inverter driving 1.5 kW EPS brushless DC motor. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET in PWM-controlled inverter; switched at 10–20 kHz with dead-time control. Use Value: Fast 6 ns fall time and 20 ns trr minimize shoot-through risk and switching losses during torque transients. |
Use Scenario: Main isolation switch between high-voltage traction battery and 48 V auxiliary system in EV BMS. IC Role / Device Role / Timing Role: Single-pole, normally-open power switch activated during pre-charge and main contactor sequencing. Use Value: 60 V rating accommodates 48 V nominal plus 20 % tolerance; 18.5 A IAS withstands short-circuit events during fault clearing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1704PBF | Higher RDS(on) (0.022 Ω @ 10 VGS), TO-220 package, no AEC-Q101 qualification | Limited to non-automotive industrial motor drives; lacks thermal performance for under-hood mounting | Select only for cost-sensitive non-automotive designs where 175 °C operation and qualification are not required |
| STL220N6F7AG | Same 60 V rating and PowerFLAT 5x6 package, but higher Qg (18 nC) and lower ID (50 A) | Suitable for space-constrained infotainment power rails, but less efficient in high-current EPS or BCM applications | Prefer when PCB footprint is constrained to 5x6 mm and gate drive strength is limited; avoid for >55 A peak loads |
Compared with IRF1704PBF and STL220N6F7AG, SQJ170ELP-T1_GE3 delivers superior thermal performance (1.1 °C/W vs. >2.5 °C/W), lower conduction loss at high temperature, and full AEC-Q101 compliance-making it the preferred choice for safety-critical, high-power automotive switching where reliability and efficiency are co-prioritized.
Availability
SQJ170ELP-T1_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, 48 V mild hybrid DC/DC converters, and electric power steering motor drivers requiring stable component supply across extended production lifecycles.
Supply support for SQJ170ELP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ170ELP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in ASIL-B-compliant vehicle subsystems including power distribution, motor control, and battery management.
FAQ
What is the maximum continuous drain current rating for SQJ170ELP-T1_GE3 at 125 °C case temperature?
The SQJ170ELP-T1_GE3 supports 36 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures reliable operation in high-ambient under-hood environments without exceeding 175 °C junction temperature.
Does SQJ170ELP-T1_GE3 require a gate driver IC for automotive 12 V system applications?
Yes, SQJ170ELP-T1_GE3 benefits from a dedicated gate driver IC in automotive applications due to its 12 nC total gate charge and requirement for fast, low-impedance turn-on/turn-off to minimize switching losses. Direct microcontroller GPIO drive is insufficient for PWM frequencies above 10 kHz or high-current loads.
Is SQJ170ELP-T1_GE3 compatible with lead-free reflow soldering profiles?
Yes, SQJ170ELP-T1_GE3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak solder temperature up to 260 °C. The PowerPAK SO-8L package uses matte tin plating and is designed for standard Pb-free thermal profiles; refer to Vishay document 73257 for exact profile details.
What is the body diode forward voltage of SQJ170ELP-T1_GE3 at 10 A and room temperature?
The body diode forward voltage (VSD) of SQJ170ELP-T1_GE3 is rated at ≤1.1 V at IF = 10 A and VGS = 0 V, as specified in the "Source-Drain Diode Ratings and Characteristics" section. This low VSD reduces conduction loss during freewheeling in half-bridge and synchronous rectifier configurations.
How does the RDS(on) of SQJ170ELP-T1_GE3 change with junction temperature?
SQJ170ELP-T1_GE3 exhibits a positive temperature coefficient: RDS(on) increases to 0.028 Ω at TJ = 125 °C and 0.034 Ω at TJ = 175 °C (measured at VGS = 10 V, ID = 10 A). This behavior provides inherent current-sharing stability in paralleled configurations and predictable thermal derating.
SQJ170ELP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1165 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ170ELP-T1_GE3 FAQ
1.How can I place an order for SQJ170ELP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ170ELP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ170ELP-T1_GE3 reliable?
The price and inventory of SQJ170ELP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ170ELP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ170ELP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ170ELP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ170ELP-T1_GE3?
SQJ170ELP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ170ELP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ170ELP-T1_GE3?
For technical support, including SQJ170ELP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ170ELP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ170ELP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ170ELP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ170ELP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ170ELP-T1_GE3?
All SQJ170ELP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ170ELP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ170ELP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ170ELP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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