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Vishay Siliconix SQJ174EP-T1_GE3
- Part No.:
- SQJ174EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ174EP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 60 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:5,789
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Product details
Overview
SQJ174EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 293 A continuous drain current at TC = 25 °C, and 0.0029 Ω RDS(on) at VGS = 10 V and ID = 15 A. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, making it suitable for high-current DC-DC converter primary-side switching in 48 V mild-hybrid vehicle systems.
For engineers reviewing the SQJ174EP-T1_GE3 datasheet, SQJ174EP-T1_GE3 pinout, SQJ174EP-T1_GE3 application, or SQJ174EP-T1_GE3 equivalent, key selection criteria include its 0.30 °C/W junction-to-case thermal resistance, 54 nC total gate charge, 100% Rg and UIS tested reliability, and PowerPAK SO-8L package compatibility with high-density automotive PCB layouts.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-efficiency power conversion. Its 60 V VDS rating supports 48 V nominal bus architectures with 150 % overvoltage margin, while the 175 °C maximum junction temperature enables operation in under-hood environments without derating.
The device features a robust body diode with 52 nC Qrr and 50–100 ns trr, supporting synchronous rectification and freewheeling in hard-switched topologies. Gate drive requirements are defined by 1.3 Ω typical gate resistance and 21 nC Qgs, enabling compatibility with standard 10 V gate drivers in automotive control modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Supports 48 V system rails with full transient margin per ISO 7637-2 Pulse 5a |
| RDS(on) | 0.0029 Ω @ VGS = 10 V, ID = 15 A - Enables < 0.5 W conduction loss at 200 A (derated) |
| ID (cont.) | 293 A @ TC = 25 °C - Delivers high peak power in short-duration load dumps |
| TJ max | +175 °C - Qualified for engine compartment mounting without thermal throttling |
| Qg | 54 nC typ. @ VDS = 30 V, ID = 40 A - Determines gate driver power and switching loss trade-off |
| RthJC | 0.30 °C/W - Enables direct heatsink attachment for > 400 W dissipation capability |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronic control units |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), 6.15 mm × 4.90 mm footprint, exposed drain pad on bottom side for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Five parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching |
| 4 | Gate (G) | Single gate input with 1.3 Ω typical resistance; requires < 0.55 V gate threshold margin for reliable turn-on |
| 5, 6 | Drain (D) | Two drain terminals connected to large internal copper clip; electrically tied to exposed bottom thermal pad |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 23 S transconductance and 0.00235 Ω RDS(on) typ. at 25 °C for minimal on-state loss |
| 100 % Rg and UIS tested | Ensures gate robustness against ESD and avalanche energy handling up to 135 mJ per pulse |
| Exposed drain thermal pad | Enables < 0.5 °C/W total thermal path when soldered to 1"² FR4 PCB with thermal vias |
| Body diode with low Qrr | 52 nC reverse recovery charge minimizes commutation loss in buck and half-bridge freewheeling |
| AEC-Q101 qualification | Validated for automotive use including HTOL, temperature cycling, and HTRB per stress test plan |
Applications
| 48 V Mild-Hybrid DC-DC Converter | Automotive On-Board Charger (OBC) Input Stage |
|---|---|
Use Scenario: High-frequency (100–300 kHz) step-down conversion from 48 V battery to 12 V auxiliary rail in PHEV powertrain. IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous buck topology, operating with 10 V gate drive and 200 A peak current. Use Value: 0.0029 Ω RDS(on) limits conduction loss to < 116 W at 200 A, enabling > 97 % efficiency at full load. | Use Scenario: AC/DC front-end rectification and power factor correction (PFC) stage in bidirectional OBC modules. IC Role / Device Role / Timing Role: Fast-switching N-channel switch in boost PFC circuit, handling 15 A RMS input current at 50–100 kHz. Use Value: 54 nC Qg and 4 ns fall time support high-frequency operation with < 0.8 W switching loss at 100 kHz. |
| Engine Control Unit (ECU) Load Switch | Electric Power Steering (EPS) Motor Driver |
Use Scenario: High-current (100–250 A) protected load switching for solenoids, fuel pumps, and HVAC actuators. IC Role / Device Role / Timing Role: Low-side load switch controlled via PWM or enable signal, with integrated overtemperature shutdown. Use Value: 175 °C TJ max and 169 A ID rating at TC = 125 °C ensure uninterrupted operation during extended engine runtime. | Use Scenario: Half-bridge leg in three-phase inverter driving 400 V EPS motor with regenerative braking. IC Role / Device Role / Timing Role: Low-side switch in phase-leg configuration, conducting 120 A peak with body diode freewheeling. Use Value: 50–100 ns trr and 1.1 V VSD at 15 A minimize reverse recovery loss during commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZPBF | Higher RDS(on) (3.8 mΩ), TO-220 package, no AEC-Q101 qualification | Limited to industrial/non-automotive use; lacks thermal performance for under-hood mounting | Select only for cost-sensitive non-automotive designs where 175 °C operation is not required |
| STL220N6F7 | Same 60 V rating, 2.2 mΩ RDS(on), PowerFLAT 5x6 package, AEC-Q101 qualified | Smaller footprint but higher RthJA (50 °C/W); less suited for > 150 W continuous dissipation | Prefer for space-constrained boards where thermal management uses external heatsink rather than PCB copper |
Compared with IRF1404ZPBF and STL220N6F7, SQJ174EP-T1_GE3 offers superior thermal performance (0.30 °C/W RthJC), highest current rating (293 A), and verified automotive qualification-making it optimal for high-power, thermally demanding vehicle subsystems requiring long-term reliability.
Availability
SQJ174EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and 48 V mild-hybrid systems requiring stable component supply across multi-year production cycles.
Supply support for SQJ174EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ174EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in next-generation 48 V vehicle architectures.
FAQ
What is the maximum continuous drain current rating for SQJ174EP-T1_GE3 at 125 °C case temperature?
The SQJ174EP-T1_GE3 supports 169 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures safe operation within the 175 °C maximum junction temperature limit. The SQJ174EP-T1_GE3 maintains stable RDS(on) performance up to this temperature, with 0.0049 Ω at TJ = 125 °C and VGS = 10 V.
Does SQJ174EP-T1_GE3 have a qualified AEC-Q101 status, and what tests does that include?
Yes, SQJ174EP-T1_GE3 is AEC-Q101 qualified per Vishay documentation S21-0986-Rev. B. This includes stress testing for high-temperature operating life (HTOL), temperature cycling, highly accelerated stress test (HAST), and unbiased highly accelerated stress test (uHAST). The SQJ174EP-T1_GE3 also undergoes 100 % Rg and UIS (unclamped inductive switching) screening to validate ruggedness in automotive transients.
What is the gate threshold voltage range for SQJ174EP-T1_GE3, and how does it affect drive design?
The SQJ174EP-T1_GE3 has a gate threshold voltage range of 2.5 V to 3.5 V at VDS = VGS and ID = 250 μA. This relatively tight VGS(th) distribution ensures consistent turn-on behavior across temperature and production lots. For reliable enhancement-mode operation, gate drive must exceed 4.5 V minimum to guarantee full enhancement; the SQJ174EP-T1_GE3 is typically driven with 10 V to achieve its rated 0.0029 Ω RDS(on).
How does the PowerPAK SO-8L package of SQJ174EP-T1_GE3 improve thermal performance compared to standard SO-8?
The SQJ174EP-T1_GE3 uses PowerPAK® SO-8L, which replaces the plastic mold compound on the bottom with an exposed copper drain pad directly bonded to the die. This reduces junction-to-case thermal resistance to 0.30 °C/W-nearly 5× better than standard SO-8 packages. The SQJ174EP-T1_GE3 achieves this via internal copper clip construction and optimized thermal path geometry, enabling efficient heat transfer to the PCB or external heatsink.
Can SQJ174EP-T1_GE3 be used in synchronous rectification applications, and what body diode parameters support this?
Yes, SQJ174EP-T1_GE3 is suitable for synchronous rectification due to its low forward voltage (VSD = 1.1 V max at IF = 15 A, VGS = 0 V) and fast reverse recovery characteristics: trr = 50–100 ns, Qrr = 52–104 nC, and IRM(REC) = 1.8 A. These parameters minimize conduction and recovery losses during forced commutation. The SQJ174EP-T1_GE3 body diode is fully characterized and guaranteed across temperature, supporting robust design in LLC and phase-shifted full-bridge topologies.
SQJ174EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 293A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 81 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6111 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ174EP-T1_GE3 FAQ
1.How can I place an order for SQJ174EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ174EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ174EP-T1_GE3 reliable?
The price and inventory of SQJ174EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ174EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ174EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ174EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ174EP-T1_GE3?
SQJ174EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ174EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ174EP-T1_GE3?
For technical support, including SQJ174EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ174EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ174EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ174EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ174EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ174EP-T1_GE3?
All SQJ174EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ174EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ174EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ174EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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