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Vishay Siliconix SQJ186EP-T1_GE3
- Part No.:
- SQJ186EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ186EP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 80 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:2,510
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Product details
Overview
SQJ186EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 80 V VDS, 15 mΩ RDS(on) at VGS = 10 V, and 60 A continuous drain current at TC = 25 °C. It serves as a high-efficiency main or synchronous rectifier switch in 12 V/24 V automotive power systems including DC-DC converters and motor drivers.
For engineers reviewing the SQJ186EP-T1_GE3 datasheet, SQJ186EP-T1_GE3 pinout, SQJ186EP-T1_GE3 application, or SQJ186EP-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction rating, low gate charge (24 nC typ), and PowerPAK® SO-8L package optimized for thermal performance in space-constrained engine bay modules.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qg (24 nC) and Qgd (6 nC). Its 1.1 °C/W RthJC enables high-power operation when mounted on thermally enhanced PCBs.
The device integrates a robust body diode with 39 ns typical reverse recovery time (trr) and 53 nC Qrr, supporting synchronous rectification and freewheeling in hard-switched topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Supports 24 V automotive systems with 3× bus voltage margin against load dump transients |
| RDS(on) @ 10 V | 0.015 Ω - Enables ≤ 9 W conduction loss at 60 A, critical for high-current DC-DC stages |
| ID (cont.) | 60 A @ TC = 25 °C - Sustains peak motor drive or starter solenoid currents without derating |
| Qg | 24 nC (typ) - Reduces gate driver power demand and switching losses in 100–500 kHz converters |
| RthJC | 1.1 °C/W - Allows direct heatsinking via drain pad for >100 W power dissipation in compact modules |
| TJ max | +175 °C - Meets under-hood thermal requirements per AEC-Q101 Grade 0 without active cooling |
| Avalanche energy | 25 mJ - Withstands single-pulse inductive turn-off events in relay/snubberless motor control |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), 5.0 mm × 6.15 mm footprint, exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Common source terminals - paralleled for low-inductance return path and reduced RDS(on) contribution |
| 4 | Gate (G) | Single gate input - accepts standard 10 V logic-level drive; Rg = 1.5 Ω (typ) supports dV/dt control |
| 5, 6 | Drain (D) | Exposed copper drain pad - primary thermal path to PCB; requires solder mask defined thermal pad (78020 land pattern) |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications per stress test requirements |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| Low Qgd/Qg ratio | 0.25 (6/24 nC) - minimizes Miller-induced shoot-through risk in half-bridge configurations |
| Body diode trr | 39 ns (typ) - enables efficient synchronous rectification in buck converters up to 300 kHz |
| Thermal RthJA | 42 °C/W (PCB mount) - achieves <100 °C junction rise at 35 W dissipation on 1"² FR4 board |
Applications
| Engine Control Unit (ECU) Power Stage | Automotive DC-DC Converter |
|---|---|
Use Scenario: High-side switch for fuel injector or ignition coil driver in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Main power switch controlling 12 V battery-fed inductive loads with precise 1–10 ms pulse width modulation. Use Value: 175 °C rating ensures reliability during extended idle-stop operation; 25 mJ EAS withstands coil flyback energy without snubber. | Use Scenario: Primary-side switch in 12 V to 5 V/3.3 V buck converter powering ADAS sensors and infotainment processors. IC Role / Device Role / Timing Role: High-frequency (250 kHz) synchronous rectifier with low RDS(on) and fast trr to minimize conduction and recovery losses. Use Value: 0.015 Ω RDS(on) reduces full-load losses by >40% vs. legacy 25 mΩ parts; Qg = 24 nC lowers gate drive power by 35%. |
| Electric Power Steering (EPS) Motor Driver | Start-Stop System Solenoid Control |
Use Scenario: Half-bridge leg in 24 V EPS motor inverter delivering up to 80 A peak phase current. IC Role / Device Role / Timing Role: Low-side switching element with paralleled source pins to handle high pulsed current and reduce layout inductance. Use Value: 1.1 °C/W RthJC allows direct thermal coupling to aluminum heatsink; 112 A IDM supports motor stall conditions. | Use Scenario: High-current solenoid actuator control in 12 V start-stop battery management systems. IC Role / Device Role / Timing Role: Single-pole power switch enabling rapid engagement/disengagement of starter motor with 60 A sustained hold current. Use Value: AEC-Q101 qualification guarantees lifetime reliability across 100,000+ cold cranking cycles; 122 A IS supports solenoid inrush surge. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF186P225 | RDS(on) = 14.5 mΩ @ 10 V; non-AEC-Q101; TO-220AB package | Lacks automotive qualification; larger footprint and higher RthJA (62 °C/W) | Acceptable for industrial 24 V supplies where qualification and size are not constraints |
| STL220N6F7 | RDS(on) = 1.8 mΩ @ 10 V; AEC-Q101; PowerFLAT 5x6 | Lower RDS(on) but higher Qg (65 nC); smaller thermal pad area | Better for ultra-low-loss 48 V systems; less suitable for 12/24 V due to over-specification and cost |
Compared with IRF186P225 and STL220N6F7, the SQJ186EP-T1_GE3 delivers optimal balance of automotive compliance, thermal efficiency, and gate drive simplicity-making it the preferred choice for space-limited 12 V/24 V power stages requiring proven field reliability.
Availability
SQJ186EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and solenoid actuation requiring stable component supply and long-term lifecycle support.
Supply support for SQJ186EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and automotive qualification.
The SQJ186EP-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for under-hood power switching in engine management, ADAS, and electrified chassis systems.
FAQ
What is the maximum continuous drain current rating for SQJ186EP-T1_GE3 at 125 °C case temperature?
The SQJ186EP-T1_GE3 supports 35 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8L package and ensures safe operation in high-ambient under-hood environments. The SQJ186EP-T1_GE3 maintains stable RDS(on) up to 175 °C junction temperature, preserving switching performance across the full automotive range.
Does SQJ186EP-T1_GE3 require a gate resistor for automotive PWM applications?
Yes, a gate resistor is recommended for SQJ186EP-T1_GE3 in automotive PWM applications to control dV/dt and prevent parasitic oscillation. With a typical gate resistance of 1.5 Ω and total gate charge of 24 nC, a 10–22 Ω series resistor provides optimal trade-off between switching speed and EMI suppression. The SQJ186EP-T1_GE3 gate threshold voltage (2.5–3.5 V) ensures compatibility with standard 3.3 V and 5 V microcontroller outputs when used with appropriate level-shifting or buffer drivers.
Is SQJ186EP-T1_GE3 suitable for synchronous rectification in a 250 kHz buck converter?
Yes, SQJ186EP-T1_GE3 is well-suited for synchronous rectification in 250 kHz buck converters. Its 39 ns typical body diode reverse recovery time (trr) and 53 nC Qrr minimize dead-time losses and voltage spikes, while its 0.015 Ω RDS(on) reduces conduction loss significantly versus Schottky alternatives. The SQJ186EP-T1_GE3 also features low Qgd/Qg ratio (0.25), enhancing controllability in high-frequency half-bridge layouts.
How does the PowerPAK® SO-8L package of SQJ186EP-T1_GE3 improve thermal performance compared to standard SO-8?
The PowerPAK® SO-8L package of SQJ186EP-T1_GE3 improves thermal performance by relocating the drain connection to an exposed copper pad on the bottom surface, reducing RthJC to 1.1 °C/W-over 3× better than standard SO-8. This design enables direct thermal transfer to the PCB ground plane or external heatsink, allowing the SQJ186EP-T1_GE3 to dissipate up to 135 W at TC = 25 °C. The enhanced thermal path is critical for maintaining <150 °C junction temperature in compact automotive modules.
What avalanche capability does SQJ186EP-T1_GE3 provide, and how is it validated?
SQJ186EP-T1_GE3 provides 25 mJ single-pulse avalanche energy (EAS) with 22.5 A IAS at L = 0.1 mH, validated per AEC-Q101 stress test requirements. Each device undergoes 100 % unclamped inductive switching (UIS) testing during production to guarantee robustness against inductive turn-off transients in motor and solenoid circuits. This capability eliminates need for external clamping components in SQJ186EP-T1_GE3-based designs operating in harsh automotive environments.
SQJ186EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1942 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 135W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ186EP-T1_GE3 FAQ
1.How can I place an order for SQJ186EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ186EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ186EP-T1_GE3 reliable?
The price and inventory of SQJ186EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ186EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ186EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ186EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ186EP-T1_GE3?
SQJ186EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ186EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ186EP-T1_GE3?
For technical support, including SQJ186EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ186EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ186EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ186EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ186EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ186EP-T1_GE3?
All SQJ186EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ186EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ186EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ186EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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