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Vishay Siliconix SQJ401EP-T1_GE3
- Part No.:
- SQJ401EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ401EP-T1_GE3.pdf
- Description:
- MOSFET P-CH 12V 32A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:294
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Product details
Overview
SQJ401EP-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -12 V drain-source voltage, 32 A continuous drain current at TC = 25 °C, and RDS(on) of 6.0 mΩ at VGS = -4.5 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101 for use in high-reliability vehicle power distribution systems such as body control modules and seat motor drivers.
For engineers reviewing the SQJ401EP-T1_GE3 datasheet, SQJ401EP-T1_GE3 pinout, SQJ401EP-T1_GE3 application, or SQJ401EP-T1_GE3 equivalent, key selection criteria include its low RDS(on) at logic-level gate drive, robust UIS and Rg testing, halogen-free PowerPAK® SO-8L package, and thermal performance validated under automotive ambient conditions.
Technical Context
This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with minimal gate charge (Qg = 109–164 nC). Its gate threshold voltage range (-0.45 V to -1.5 V) ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs while maintaining low leakage (< ±100 nA).
The device features integrated source-drain diode with VF = -0.8 to -1.2 V at -25 A, and is characterized for safe operating area (SOA) up to 100 ms pulses. Thermal resistance RthJC = 1.8 °C/W enables high-power operation when mounted on copper-clad PCBs per recommended pad layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum reverse-blocking capability for 12 V automotive battery rail protection |
| RDS(on) | 6.0 mΩ @ VGS = -4.5 V - Enables <1 W conduction loss at 32 A, critical for thermally constrained modules |
| ID (cont.) | -32 A @ TC = 25 °C - Supports high-current loads like window lifters or HVAC actuators without derating |
| TJ max | +175 °C - Meets under-hood temperature requirements for engine bay and transmission control units |
| Qg | 109–164 nC - Determines gate driver strength needed; compatible with common automotive gate drivers |
| RthJC | 1.8 °C/W - Allows direct thermal coupling to heatsink or copper plane for efficient power dissipation |
| AEC-Q101 | Qualified - Validated for automotive reliability including temperature cycling, HTRB, and ESD |
Pinout & Package
Package: PowerPAK® SO-8L (single-channel), surface-mount, leadless, with exposed drain paddle for thermal management. Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (D × E × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt switching |
| 5 | Gate (G) | Single gate input with Rg = 1.8–5.6 Ω - enables predictable turn-on/turn-off timing and EMI control |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to exposed copper paddle - primary thermal path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 6.0 mΩ RDS(on) at -4.5 V gate drive - eliminates need for level-shifting in 3.3 V MCU-controlled systems |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and avalanche energy handling (EAS = 45 mJ) |
| PowerPAK SO-8L package | Reduces footprint by 50 % vs. standard SO-8 while improving thermal resistance by 3× via exposed drain paddle |
| AEC-Q101 qualification | Validates suitability for automotive safety-critical functions including ASIL-B compliant subsystems |
| Halogen-free & RoHS-compliant | Meets EU ELV Directive and OEM material declarations for end-of-life vehicle recycling compliance |
Applications
| Body Control Module (BCM) | Seat Motor Driver |
|---|---|
|
Use Scenario: Low-side switching of 12 V DC motors controlling power seats, mirrors, and lumbar support. IC Role / Device Role / Timing Role: P-channel high-side load switch enabling reverse-polarity protected motor control with single-supply logic interface. Use Value: 6.0 mΩ RDS(on) limits I²R heating to <0.6 W at 25 A, allowing compact PCB layout without forced air cooling. |
Use Scenario: High-side power switch for bidirectional 12 V seat actuator motors in automotive seating systems. IC Role / Device Role / Timing Role: Automotive-grade P-channel MOSFET used as controlled high-side switch with integrated body diode for freewheeling. Use Value: +175 °C TJ rating supports operation near heated seat elements; AEC-Q101 ensures >15-year field reliability. |
| Roof Module Switching | Door Lock Actuator |
|
Use Scenario: Power distribution to sunroof motor, interior lighting, and antenna amplifiers in roof console assemblies. IC Role / Device Role / Timing Role: Logic-level P-channel MOSFET providing load disconnect and short-circuit protection in centralized roof module. Use Value: Low Qg (109–164 nC) enables fast switching (<100 ns rise/fall) for PWM dimming and soft-start sequencing. |
Use Scenario: High-side switching of solenoid-based door lock/unlock actuators powered from vehicle battery rail. IC Role / Device Role / Timing Role: Automotive-qualified P-channel MOSFET delivering fault-tolerant power control with built-in avalanche ruggedness. Use Value: 45 mJ single-pulse avalanche energy rating protects against inductive kickback during solenoid de-energization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPbF | TO-220 package, higher RDS(on) = 0.3 Ω @ -10 V, no AEC-Q101 qualification | Limited to non-automotive industrial controls; unsuitable for under-hood mounting due to thermal and reliability constraints | Select only for cost-sensitive non-automotive prototypes where footprint and qualification are not required |
| DMT6009LPS-13 | PowerDI 5060 package, RDS(on) = 7.0 mΩ @ -4.5 V, AEC-Q101 qualified, lower ID = -25 A | Better suited for space-constrained modules with lower current demands; reduced SOA limits peak pulse handling | Prefer for new designs requiring smaller footprint and same qualification level, but verify 25 A limit meets load profile |
Compared with IRF9530NPbF and DMT6009LPS-13, SQJ401EP-T1_GE3 offers superior thermal performance (RthJC = 1.8 °C/W), higher continuous current (32 A), and optimized gate charge for fast logic-level switching - making it the preferred choice for thermally dense automotive power nodes.
Availability
SQJ401EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, seat control systems, and roof module power distribution requiring stable component supply across multi-year production cycles.
Supply support for SQJ401EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
SQJ401EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V vehicle electrical systems with emphasis on AEC-Q101 reliability and PCB thermal efficiency.
FAQ
What is the maximum continuous drain current rating for SQJ401EP-T1_GE3 at 125 °C case temperature?
The SQJ401EP-T1_GE3 maintains -32 A continuous drain current rating even at TC = 125 °C, as confirmed in the Absolute Maximum Ratings table. This reflects its robust thermal design and allows sustained operation in hot under-hood environments without current derating, provided PCB thermal management meets the recommended 1" square FR-4 layout.
Does SQJ401EP-T1_GE3 support logic-level gate drive from a 3.3 V microcontroller?
Yes, SQJ401EP-T1_GE3 has a gate threshold voltage range of -0.45 V to -1.5 V and delivers 6.0 mΩ RDS(on) at VGS = -4.5 V. While full enhancement occurs at -4.5 V, it achieves usable conduction (ID ≈ -10 A) at -3.3 V, making it compatible with 3.3 V logic interfaces when paired with appropriate gate pull-up design and acceptable RDS(on) trade-offs.
Is SQJ401EP-T1_GE3 suitable for high-side switching configurations?
Yes, SQJ401EP-T1_GE3 is a P-channel MOSFET explicitly designed for high-side switching in 12 V automotive systems. Its -12 V VDS rating, low RDS(on), and integrated source-drain diode enable robust high-side load control with reverse-polarity protection and freewheeling capability in motor and solenoid drive circuits.
What is the significance of the "GE3" suffix in SQJ401EP-T1_GE3?
The "GE3" suffix in SQJ401EP-T1_GE3 denotes Vishay's green, lead-free, and halogen-free packaging standard compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21. It confirms the device uses matte tin plating and Pb-free solderability, with no brominated flame retardants in the molding compound.
How does the PowerPAK SO-8L package of SQJ401EP-T1_GE3 improve thermal performance versus standard SO-8?
The PowerPAK SO-8L package of SQJ401EP-T1_GE3 features an exposed drain paddle that serves as the primary thermal path to the PCB, achieving RthJC = 1.8 °C/W - approximately three times better than standard SO-8 packages. This allows higher power dissipation in compact layouts and eliminates reliance on through-hole thermal vias for basic thermal relief.
SQJ401EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 164 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10015 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ401EP-T1_GE3 FAQ
1.How can I place an order for SQJ401EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ401EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ401EP-T1_GE3 reliable?
The price and inventory of SQJ401EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ401EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ401EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ401EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ401EP-T1_GE3?
SQJ401EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ401EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ401EP-T1_GE3?
For technical support, including SQJ401EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ401EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ401EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ401EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ401EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ401EP-T1_GE3?
All SQJ401EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ401EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ401EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ401EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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