Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ401EP-T2_GE3

Name: SQJ401EP-T2_GE3
Brand: Vishay Siliconix
SKU: SQJ401EP-T2_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQJ401EP-T2_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJ401EP-T2_GE3.pdf

Description:: MOSFET P-CH 12V 32A PPAK SO-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,448

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQJ401EP-T2_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-current, low-voltage load switching in engine control units and body electronics. It features -12 V V_DS, 0.0060 Ω R_DS(on) at V_GS = -4.5 V, -32 A continuous drain current, AEC-Q101 qualification, and PowerPAK® SO-8L packaging for thermal performance in space-constrained modules.

For engineers reviewing the SQJ401EP-T2_GE3 datasheet, SQJ401EP-T2_GE3 pinout, SQJ401EP-T2_GE3 application, or SQJ401EP-T2_GE3 equivalent, this page delivers verified electrical specs, thermal behavior, PCB layout guidance, and validated alternatives for automotive power distribution, reverse polarity protection, and high-side switch design.

Technical Context

This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with minimal gate charge (109 nC typical). Its -0.45 V to -1.5 V gate threshold enables robust turn-on with standard 3.3 V or 5 V logic-level controllers in automotive domains where supply rails may dip below nominal.

The device integrates a source-drain diode with -0.8 V to -1.2 V forward voltage at -25 A, supporting bidirectional current handling in regenerative braking interfaces and battery disconnect circuits. Junction-to-case thermal resistance of 1.8 °C/W supports high-power operation when mounted on copper-clad PCBs per Vishay's recommended pad pattern.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum drain-source blocking voltage compatible with 12 V automotive battery systems including cold-crank transients.
R_DS(on) @ V_GS = -4.5 V	0.0060 Ω - Enables ≤ 9 mW conduction loss at 30 A, critical for thermally constrained ECU modules.
I_D Continuous	-32 A - Sustains full-load current without derating at T_C = 25 °C, matching requirements of HVAC actuators and fuel pump drivers.
Q_g Total Gate Charge	109 nC - Determines driver strength needed; compatible with common automotive gate drivers like TI UCC27531.
T_J Operating Range	-55 °C to +175 °C - Meets under-hood temperature requirements per AEC-Q101, enabling placement near engines or transmissions.
R_thJC	1.8 °C/W - Allows direct thermal coupling to heatsink or copper pour, reducing junction temperature rise by >40 °C vs. ambient-only dissipation.

Pinout & Package

Package: PowerPAK® SO-8L (single-channel), 5.13 mm × 6.15 mm footprint, exposed drain pad on bottom side for enhanced thermal transfer. Compliant with IPC-7351B SOIC-8 variant standards.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Common source connection; pins 1–4 and 7–8 are internally tied - used for low-inductance return path and thermal conduction to PCB ground plane.
5	Gate (G)	Control input; requires < ±8 V rating; low 3.7 Ω gate resistance minimizes ringing during fast switching.
6	Drain (D)	High-side power output node; connected to exposed copper pad on package underside for primary heat dissipation path.

Key Features

Feature	Design Value
AEC-Q101 Qualified	Validated for automotive use across temperature, humidity, vibration, and lifetime stress tests - eliminates need for additional qualification in Tier-1 designs.
100 % R_g and UIS Tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures reliability in motor commutation and solenoid drive.
Halogen-Free & RoHS Compliant	Meets EU Directive 2002/95/EC and IEC 61249-2-21 - supports sustainability requirements for global vehicle homologation.
Low R_DS(on) at V_GS = -2.5 V	0.0080 Ω - guarantees functional switching even during deep battery discharge (e.g., 7 V system), preventing unintended load dropout.

Applications

Engine Control Unit Load Switch	Automotive Reverse Polarity Protection
Use Scenario: High-side switching of fuel injectors, ignition coils, or turbocharger actuators in modern gasoline/diesel ECUs. IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12 V loads with logic-level gate drive from microcontroller GPIO. Use Value: Low 0.0060 Ω R_DS(on) reduces power loss and self-heating during sustained 30 A pulses, extending module lifetime in under-hood environments.	Use Scenario: Protecting infotainment head units, ADAS cameras, and telematics modules from damage due to incorrect battery terminal connection. IC Role / Device Role / Timing Role: Reverse-biased P-MOSFET placed between battery input and system rail, conducting only when polarity is correct. Use Value: -12 V V_DS rating and -175 °C TJ capability ensure survival during jump-start events and extended hot-cranking conditions.
Body Control Module Power Distribution	Electric Power Steering (EPS) Motor Driver Stage
Use Scenario: Centralized 12 V power routing for door locks, window lifts, and interior lighting in BCMs with integrated power management. IC Role / Device Role / Timing Role: High-current load switch enabling software-controlled power gating per subsystem. Use Value: 32 A continuous rating supports simultaneous activation of multiple high-power loads without thermal throttling on standard FR-4 PCBs.	Use Scenario: Half-bridge high-side switch in EPS motor phase-leg drivers requiring fast, low-loss commutation. IC Role / Device Role / Timing Role: P-channel MOSFET paired with N-channel low-side device in compact half-bridge configuration. Use Value: 109 nC Q_g and 263 ns t_d(off) enable efficient PWM operation up to 20 kHz while maintaining < 100 mW switching loss at 10 A.

Engine Control Unit Load Switch

Automotive Reverse Polarity Protection

Use Scenario: High-side switching of fuel injectors, ignition coils, or turbocharger actuators in modern gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12 V loads with logic-level gate drive from microcontroller GPIO.

Use Value: Low 0.0060 Ω R_DS(on) reduces power loss and self-heating during sustained 30 A pulses, extending module lifetime in under-hood environments.

Use Scenario: Protecting infotainment head units, ADAS cameras, and telematics modules from damage due to incorrect battery terminal connection.

IC Role / Device Role / Timing Role: Reverse-biased P-MOSFET placed between battery input and system rail, conducting only when polarity is correct.

Use Value: -12 V V_DS rating and -175 °C TJ capability ensure survival during jump-start events and extended hot-cranking conditions.

Body Control Module Power Distribution

Electric Power Steering (EPS) Motor Driver Stage

Use Scenario: Centralized 12 V power routing for door locks, window lifts, and interior lighting in BCMs with integrated power management.

IC Role / Device Role / Timing Role: High-current load switch enabling software-controlled power gating per subsystem.

Use Value: 32 A continuous rating supports simultaneous activation of multiple high-power loads without thermal throttling on standard FR-4 PCBs.

Use Scenario: Half-bridge high-side switch in EPS motor phase-leg drivers requiring fast, low-loss commutation.

IC Role / Device Role / Timing Role: P-channel MOSFET paired with N-channel low-side device in compact half-bridge configuration.

Use Value: 109 nC Q_g and 263 ns t_d(off) enable efficient PWM operation up to 20 kHz while maintaining < 100 mW switching loss at 10 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	TO-220 package, higher R_DS(on) (0.3 Ω), lower current (-12 A), no AEC-Q101 qualification	General-purpose industrial switching only; unsuitable for automotive under-hood deployment	Select only for non-automotive prototypes or cost-sensitive legacy designs where thermal and qualification requirements are relaxed.
DMTH10H025LPSQ-13	PowerDI 5060 package, -20 V V_DS, 0.0025 Ω R_DS(on) at -4.5 V, AEC-Q101 qualified	Higher voltage margin and lower on-resistance - better for 24 V commercial vehicles or future 48 V architectures	Choose when designing for multi-platform compatibility or upgrading from 12 V to dual-voltage systems.

Compared with IRF9530NPbF and DMTH10H025LPSQ-13, SQJ401EP-T2_GE3 offers optimal balance of size, thermal performance, and automotive compliance for 12 V passenger vehicle applications - its PowerPAK SO-8L footprint saves >60 % board area versus TO-220, while maintaining AEC-Q101 validation and industry-leading R_DS(on) at logic-level gate drive.

Availability

SQJ401EP-T2_GE3 is available at Aetrix Electronics and suitable for engine control units, body control modules, and reverse polarity protection circuits requiring stable component supply across automotive production lifecycles.

Supply support for SQJ401EP-T2_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJ401EP-T2_GE3 belongs to Vishay's TrenchFET® Automotive P-Channel family, engineered specifically for high-current, high-temperature switching in 12 V vehicle subsystems where space, efficiency, and qualification rigor are critical.

FAQ

What is the maximum junction temperature rating for SQJ401EP-T2_GE3?

The SQJ401EP-T2_GE3 has a specified operating junction temperature range of -55 °C to +175 °C, fully compliant with AEC-Q101 stress testing requirements. This allows reliable operation in under-hood locations such as near exhaust manifolds or transmission control units where ambient temperatures exceed 125 °C. The 175 °C limit is validated through accelerated life testing and thermal transient characterization.

Does SQJ401EP-T2_GE3 require a gate resistor for automotive MCU drive?

Yes, SQJ401EP-T2_GE3 benefits from an external gate resistor (typically 10–47 Ω) when driven directly by automotive MCUs to dampen ringing and control dV/dt during switching. Its measured gate resistance is 3.7 Ω, but adding series resistance improves EMI performance and prevents shoot-through in half-bridge configurations. Vishay recommends verifying layout parasitics and using the 109 nC total gate charge value to calculate optimal R_g for target switching speed.

Is SQJ401EP-T2_GE3 pin-compatible with other PowerPAK SO-8L P-channel MOSFETs?

No - SQJ401EP-T2_GE3 is not guaranteed pin-compatible with other PowerPAK SO-8L P-channel devices unless explicitly stated in their respective datasheets. While the package outline matches IPC-7351B SOIC-8 standards, internal pin assignments (e.g., source pin count and drain pad configuration) vary across manufacturers and families. Always verify pinout diagrams and thermal pad connectivity before substitution; SQJ401EP-T2_GE3 uses pins 1–4 and 7–8 as source, pin 5 as gate, and pin 6 + underside pad as drain.

Can SQJ401EP-T2_GE3 be used in synchronous rectification applications?

No - SQJ401EP-T2_GE3 is not optimized for synchronous rectification. It lacks specified reverse recovery time (t_rr) or body diode Q_rr parameters, and its source-drain diode is intended for clamping and freewheeling, not high-frequency bidirectional conduction. For synchronous buck or flyback topologies, N-channel MOSFETs with specified Q_g/Q_gd ratios and fast body diodes (e.g., SiC or optimized trench devices) are preferred. SQJ401EP-T2_GE3 serves best in unidirectional high-side switching roles.

What is the avalanche energy rating of SQJ401EP-T2_GE3 and how is it applied in circuit design?

SQJ401EP-T2_GE3 is rated for 45 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH. This specification validates ruggedness against inductive kickback from solenoids, relays, or motors during forced turn-off. Designers must ensure that worst-case stored energy (½·L·I²) in the load remains below 45 mJ - for example, limiting peak current to ≤30 A with a 0.1 mH coil. The device is 100 % UIS tested, confirming consistent avalanche capability across production lots.

SQJ401EP-T2_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 164 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 10015 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJ401EP-T2_GE3 FAQ

1.How can I place an order for SQJ401EP-T2_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ401EP-T2_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ401EP-T2_GE3 reliable?

The price and inventory of SQJ401EP-T2_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ401EP-T2_GE3 is usually 5 days.

3.What payment methods are accepted for SQJ401EP-T2_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ401EP-T2_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ401EP-T2_GE3?

SQJ401EP-T2_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ401EP-T2_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ401EP-T2_GE3?

For technical support, including SQJ401EP-T2_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ401EP-T2_GE3 requirements.

6.How does Aetrix verify that SQJ401EP-T2_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJ401EP-T2_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ401EP-T2_GE3 meets industry standards.

7.What is the process for return or replacement of SQJ401EP-T2_GE3?

All SQJ401EP-T2_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ401EP-T2_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ401EP-T2_GE3 part is unused and in its original packaging.

Return procedure for SQJ401EP-T2_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…