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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJ456EP-T1_GE3

Name: SQJ456EP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJ456EP-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJ456EP-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJ456EP-T1_GE3.pdf

Description:: MOSFET N-CH 100V 32A PPAK SO-8

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Product details

Overview

SQJ456EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 32 A continuous drain current at 25 °C, and 0.026 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, making it suitable for high-reliability engine control, DC-DC converter high-side switching, and automotive body electronics.

For engineers reviewing the SQJ456EP-T1_GE3 datasheet, SQJ456EP-T1_GE3 pinout, SQJ456EP-T1_GE3 application, or SQJ456EP-T1_GE3 equivalent, key selection criteria include its 1.8 °C/W junction-to-case thermal resistance, 42 nC total gate charge, 100 % UIS-tested ruggedness, and PowerPAK® SO-8L package with exposed-drain thermal pad for enhanced PCB heat dissipation.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V and 24 V automotive systems. Its gate threshold voltage (2.5–3.5 V) enables robust drive compatibility with standard logic-level controllers, while its 106 pF reverse transfer capacitance (Crss) supports stable operation under high dv/dt conditions.

The device integrates a co-packaged body diode with 0.75–1.2 V forward voltage at 4.3 A, enabling synchronous rectification and freewheeling in buck converters and motor drivers. Its 45 mJ single-pulse avalanche energy rating ensures survivability during inductive load switching transients without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports full 24 V automotive battery rail with margin for load dump spikes.
R_DS(on) @ V_GS = 10 V	0.026 Ω - Enables ≤ 26 W conduction loss at 32 A, critical for thermally constrained modules.
I_D (continuous, T_C = 25 °C)	32 A - Delivers high power density in compact PowerPAK SO-8L footprint.
T_J max	+175 °C - Meets under-hood temperature requirements per AEC-Q101 stress testing.
Q_g	42 nC - Determines gate driver power requirement and switching speed in PWM circuits.
R_thJC	1.8 °C/W - Enables direct thermal coupling to heatsink or copper pour for efficient power handling.
E_AS	45 mJ - Guarantees single-event avalanche robustness during inductive turn-off without failure.

Pinout & Package

Package: PowerPAK® SO-8L (single-die, leadless, exposed-drain thermal pad). Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (D × E × A). Features bottom-side exposed copper drain pad for low-thermal-resistance PCB mounting.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Common source connection; pins 1–4 and 7–8 are internally paralleled for low-inductance, high-current return path.
5	Gate (G)	Control input; requires ≥10 V for full enhancement; gate resistance 0.31–3.12 Ω affects switching timing.
6	Drain (D)	Main power output terminal; electrically connected to exposed copper pad on bottom of package for thermal and electrical conduction.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use across -55 °C to +175 °C with extended reliability testing including HTGB, HTRB, and temperature cycling.
100 % UIS tested	Each unit undergoes unclamped inductive switching stress test to ensure avalanche capability meets 45 mJ spec without screening failure.
TrenchFET® architecture	Delivers 20 % lower R_DS(on) vs. planar MOSFETs at same die size, improving efficiency in space-constrained ECUs.
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and EU Directive 2002/95/EC; supports environmentally regulated automotive supply chains.
Exposed-drain thermal pad	Enables <1.8 °C/W junction-to-case path when soldered to ≥1"² 2 oz. copper PCB area, reducing thermal derating needs.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive DC-DC Converter High-Side Switch
Use Scenario: Driving 12 V solenoid fuel injectors in gasoline direct injection systems with PWM duty cycles up to 90 %. IC Role / Device Role / Timing Role: High-current, high-speed N-channel switch controlling injector coil current; handles repetitive 100 V inductive flyback. Use Value: 45 mJ E_AS and 100 % UIS testing eliminate need for external flyback diodes or snubbers, reducing BOM count and board area.	Use Scenario: High-side main switch in 48 V–12 V bidirectional buck-boost converters for 48 V mild hybrid architectures. IC Role / Device Role / Timing Role: Primary power switch operating at 200–500 kHz; manages 32 A peak load current with minimal conduction loss. Use Value: 0.026 Ω R_DS(on) at 10 V gate drive reduces conduction loss by >35 % versus comparable 100 V MOSFETs, improving system efficiency above 92 %.
Body Control Module (BCM) Power Distribution	Electric Power Steering (EPS) Motor Phase Switch
Use Scenario: Solid-state replacement for mechanical relays in centralized power distribution units managing headlamps, HVAC fans, and window lifts. IC Role / Device Role / Timing Role: Low-side or high-side load switch with integrated diagnostics; sustains 175 °C ambient under hood. Use Value: +175 °C rated junction temperature and AEC-Q101 qualification ensure long-term reliability in sealed, non-ventilated BCM enclosures.	Use Scenario: Half-bridge phase leg in 3-phase EPS motor drivers requiring fast, low-loss switching at 10–20 kHz PWM frequencies. IC Role / Device Role / Timing Role: High-side or low-side switching element; co-packaged body diode supports synchronous rectification during regeneration. Use Value: 0.75–1.2 V V_SD at 4.3 A enables efficient freewheeling with <1.5 W diode loss, reducing heatsink requirements in torque-dense EPS modules.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive DC-DC Converter High-Side Switch

Use Scenario: Driving 12 V solenoid fuel injectors in gasoline direct injection systems with PWM duty cycles up to 90 %.

IC Role / Device Role / Timing Role: High-current, high-speed N-channel switch controlling injector coil current; handles repetitive 100 V inductive flyback.

Use Value: 45 mJ E_AS and 100 % UIS testing eliminate need for external flyback diodes or snubbers, reducing BOM count and board area.

Use Scenario: High-side main switch in 48 V–12 V bidirectional buck-boost converters for 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: Primary power switch operating at 200–500 kHz; manages 32 A peak load current with minimal conduction loss.

Use Value: 0.026 Ω R_DS(on) at 10 V gate drive reduces conduction loss by >35 % versus comparable 100 V MOSFETs, improving system efficiency above 92 %.

Body Control Module (BCM) Power Distribution

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Solid-state replacement for mechanical relays in centralized power distribution units managing headlamps, HVAC fans, and window lifts.

IC Role / Device Role / Timing Role: Low-side or high-side load switch with integrated diagnostics; sustains 175 °C ambient under hood.

Use Value: +175 °C rated junction temperature and AEC-Q101 qualification ensure long-term reliability in sealed, non-ventilated BCM enclosures.

Use Scenario: Half-bridge phase leg in 3-phase EPS motor drivers requiring fast, low-loss switching at 10–20 kHz PWM frequencies.

IC Role / Device Role / Timing Role: High-side or low-side switching element; co-packaged body diode supports synchronous rectification during regeneration.

Use Value: 0.75–1.2 V V_SD at 4.3 A enables efficient freewheeling with <1.5 W diode loss, reducing heatsink requirements in torque-dense EPS modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N10F7	100 V, 130 A rated, R_DS(on) = 0.0075 Ω @ 10 V, PowerFLAT 5x6 package, higher current but larger footprint.	Better suited for high-current inverters where board space allows larger package; not drop-in due to different pinout and thermal pad layout.	Select STL130N10F7 only if >100 A peak current or <10 mΩ R_DS(on) is required and PCB layout can accommodate 5x6 mm footprint.
IRF3205PbF	55 V rating (not 100 V), TO-220 package, R_DS(on) = 0.008 Ω @ 10 V, lacks AEC-Q101 qualification and high-temp rating.	Not suitable for 24 V automotive systems with load dump; requires heatsink; not qualified for automotive use.	IRF3205PbF is not recommended for automotive applications; use only in industrial 12 V non-automotive designs with derated voltage margin.

Compared with STL130N10F7 and IRF3205PbF, SQJ456EP-T1_GE3 offers optimal balance of 100 V rating, AEC-Q101 compliance, +175 °C operation, and compact PowerPAK SO-8L footprint-making it the preferred choice for space-constrained, thermally demanding automotive power stages where voltage margin and qualification are non-negotiable.

Availability

SQJ456EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control units, DC-DC converters, and body electronics requiring stable component supply across extended product lifecycles.

Supply support for SQJ456EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJ456EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in under-hood and chassis-mounted electronic control modules.

FAQ

What is the maximum continuous drain current rating for SQJ456EP-T1_GE3 at 125 °C case temperature?

The SQJ456EP-T1_GE3 supports 21 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and must be applied when ambient or PCB thermal conditions prevent maintaining T_C ≤ 25 °C. Designers should verify junction temperature using R_thJC = 1.8 °C/W and actual power dissipation to ensure T_J stays within -55 °C to +175 °C range. The SQJ456EP-T1_GE3 maintains full AEC-Q101 compliance across this entire operating range.

Is SQJ456EP-T1_GE3 suitable for synchronous rectification in a 48 V automotive DC-DC converter?

Yes, SQJ456EP-T1_GE3 is suitable for synchronous rectification due to its low 0.026 Ω R_DS(on) at 10 V gate drive and co-packaged body diode with 0.75–1.2 V forward voltage at 4.3 A. Its 100 V rating provides sufficient margin for 48 V nominal systems experiencing load dump transients. However, gate drive must ensure clean, fast turn-on/off to avoid shoot-through; typical gate charge of 42 nC requires appropriate driver sizing. The SQJ456EP-T1_GE3's AEC-Q101 qualification and +175 °C rating further validate its use in high-reliability automotive converters.

Does SQJ456EP-T1_GE3 have a guaranteed avalanche rating, and how is it tested?

Yes, SQJ456EP-T1_GE3 has a guaranteed single-pulse avalanche energy rating of 45 mJ at T_J = 25 °C, with 100 % UIS (unclamped inductive switching) testing performed on every production unit. The test applies a defined inductive load (L = 0.1 mH) and measures energy absorption during controlled turn-off without external clamping. This ensures each SQJ456EP-T1_GE3 device can safely absorb inductive energy spikes common in automotive solenoid and motor drive applications, eliminating reliance on statistical process guarantees.

What is the gate threshold voltage range for SQJ456EP-T1_GE3, and how does it affect drive compatibility?

The gate threshold voltage (V_GS(th)) for SQJ456EP-T1_GE3 is specified from 2.5 V to 3.5 V at I_D = 250 μA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level microcontrollers and gate drivers, while maintaining noise immunity against spurious gate excitation. At V_GS = 6 V, R_DS(on) is 0.030 Ω-sufficient for many automotive applications-so the SQJ456EP-T1_GE3 supports both logic-level and standard 10 V gate drive systems without level-shifting circuitry.

How does the PowerPAK SO-8L package of SQJ456EP-T1_GE3 improve thermal performance compared to standard SO-8?

The PowerPAK SO-8L package of SQJ456EP-T1_GE3 features an exposed-drain copper pad on the bottom surface, directly soldered to PCB copper pour, achieving a junction-to-case thermal resistance of just 1.8 °C/W-over 4× better than standard SO-8 packages (~8–10 °C/W). This enables higher continuous current handling without external heatsinks and reduces thermal-induced parameter drift. The SQJ456EP-T1_GE3's compact 5.13 mm × 6.15 mm footprint retains PCB area efficiency while delivering superior thermal performance essential for automotive under-hood applications.

SQJ456EP-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3342 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJ456EP-T1_GE3 FAQ

1.How can I place an order for SQJ456EP-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJ456EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJ456EP-T1_GE3 reliable?

The price and inventory of SQJ456EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ456EP-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJ456EP-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ456EP-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJ456EP-T1_GE3?

SQJ456EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJ456EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJ456EP-T1_GE3?

For technical support, including SQJ456EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ456EP-T1_GE3 requirements.

6.How does Aetrix verify that SQJ456EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJ456EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ456EP-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJ456EP-T1_GE3?

All SQJ456EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ456EP-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJ456EP-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJ456EP-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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