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Vishay Siliconix SQJ858AEP-T1_BE3
- Part No.:
- SQJ858AEP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ858AEP-T1_BE3.pdf
- Description:
- MOSFET N-CH 40V 58A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,993
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Product details
Overview
SQJ858AEP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 58 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature. It delivers RDS(on) of 6.3 mΩ at VGS = 10 V and 7.5 mΩ at VGS = 4.5 V, and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ858AEP-T1_BE3 datasheet, SQJ858AEP-T1_BE3 pinout, SQJ858AEP-T1_BE3 application, or SQJ858AEP-T1_BE3 equivalent, key selection criteria include its PowerPAK® SO-8L leadless package, 100 % Rg and UIS tested reliability, low gate charge (36 nC typ.), and thermal performance with RthJC = 3.1 °C/W - critical for high-power density automotive power stages.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its gate threshold voltage (VGS(th)) is tightly specified at 1.5–2.5 V, enabling robust drive compatibility with standard 3.3 V and 5 V logic controllers while maintaining noise immunity.
The device integrates a body diode with forward voltage VSD = 0.8–1.1 V at IF = 15 A and supports unclamped inductive switching (UIS) up to 61 mJ. Its dynamic parameters - Ciss = 1951–2450 pF, Crss = 110–140 pF, and Qgd = 6 nC - are characterized for hard-switched synchronous rectification and PWM motor drive topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage for 12 V/24 V automotive bus protection and load switching. |
| RDS(on) @ VGS = 10 V | 6.3 mΩ max - Enables <1 W conduction loss at 40 A, supporting high-efficiency DC-DC phases and motor drivers. |
| ID (continuous) | 58 A at TC = 25 °C - Supports high-current loads such as HVAC blowers, fuel pumps, and solenoid drivers without derating. |
| Qg (total gate charge) | 36 nC typ. - Reduces gate drive power and enables fast turn-on/turn-off (td(on) = 10 ns, tf = 8 ns) for high-frequency PWM. |
| TJ max | +175 °C - Qualified for under-hood operation in engine control units and transmission modules per AEC-Q101. |
| RthJC | 3.1 °C/W - Enables direct thermal coupling to heatsink or copper plane for high-power dissipation in compact layouts. |
| AEC-Q101 | Qualified - Validated for automotive reliability including HTOL, temperature cycling, and HTRB per stress test standards. |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, surface-mount), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), with exposed drain paddle on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate drive; low input capacitance (Ciss ≈ 2.2 nF) minimizes driver loading. |
| 2 (S) | Source | Power return path; tied to PCB ground plane; three parallel source terminals reduce parasitic inductance. |
| 3 (S) | Source | Redundant source connection for improved current sharing and lower effective RDS(on) in high-current paths. |
| 4 (S) | Source | Third source terminal enhances thermal conduction and reduces source loop inductance in high-dI/dt switching. |
| 5 (D) | Drain | Main power output; connected to exposed copper paddle - must be soldered to large copper area for thermal management. |
| 6 (D) | Drain | Secondary drain terminal; electrically and thermally tied to paddle; improves current distribution and thermal spreading. |
| 7 (D) | Drain | Third drain connection; ensures low-inductance, low-resistance path from die to PCB for high-efficiency power delivery. |
| 8 (G) | Gate | Second gate terminal; paralleled with Pin 1 to reduce gate loop inductance and suppress oscillation in high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers industry-leading RDS(on) × Qg figure-of-merit (≈ 227 mΩ·nC), minimizing combined conduction and switching losses. |
| 100 % Rg and UIS tested | Each unit verified for gate resistance consistency and unclamped inductive switching ruggedness - critical for motor fault tolerance. |
| PowerPAK® SO-8L leadless package | Eliminates wirebond inductance and improves thermal resistance by 40 % vs. standard SO-8; enables >50 A current handling in same footprint. |
| AEC-Q101 qualification | Validated across temperature, humidity, and mechanical stress profiles - approved for safety-critical automotive subsystems. |
| Low VGS(th) variation over temperature | VGS(th) shift ≤ ±0.3 V from -55 °C to +175 °C - ensures stable turn-on behavior across full automotive ambient range. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Precise, high-speed switching of 12 V fuel injectors in gasoline direct injection systems with peak currents up to 50 A. IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch controlled by microcontroller PWM with external gate driver. Use Value: Low RDS(on) and fast switching (tf = 8 ns) minimize injector coil energy loss and enable accurate pulse-width modulation down to 100 μs. |
Use Scenario: Primary-side high-side switch in 48 V-to-12 V bidirectional DC-DC converters for 48 V mild hybrid architectures. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 200–500 kHz with active body diode commutation. Use Value: Low Qgd (6 nC) and Crss (110–140 pF) reduce switching losses and EMI during hard-commutation transitions. |
| Electric Power Steering (EPS) Motor Phase Leg | Automotive Battery Disconnect Switch |
Use Scenario: Half-bridge upper switch in 3-phase EPS motor inverter, handling 40 A RMS phase current with 175 °C junction temperature. IC Role / Device Role / Timing Role: High-current, high-reliability power switch in space-constrained motor control module. Use Value: RthJC = 3.1 °C/W and AEC-Q101 qualification ensure thermal stability and long-term reliability under cyclic load conditions. |
Use Scenario: Main contactor replacement in 12 V battery management systems for automatic isolation during fault events. IC Role / Device Role / Timing Role: Solid-state high-side disconnect switch with integrated overcurrent and thermal shutdown signaling. Use Value: 230 A pulsed drain current rating and 61 mJ avalanche energy support safe interruption of short-circuit faults without destruction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF3710PBF | TO-220 package, RDS(on) = 21 mΩ @ 10 V, TJ max = 175 °C, not AEC-Q101 qualified. | Larger footprint and higher thermal resistance (RthJC = 1.5 °C/W but RthJA = 62 °C/W); suited for non-automotive industrial use. | Choose IRF3710PBF only for cost-sensitive, non-automotive designs where AEC-Q101 and space constraints are not required. |
| STL220N4F7AG | PowerFLAT™ 8x8 HV package, RDS(on) = 3.7 mΩ @ 10 V, AEC-Q101 qualified, Qg = 52 nC. | Lower RDS(on) but higher gate charge increases driver loss; larger 8x8 mm footprint limits layout flexibility in tight ECUs. | Prefer STL220N4F7AG when ultra-low conduction loss dominates design priority and board area permits larger package. |
Compared with IRF3710PBF and STL220N4F7AG, the SQJ858AEP-T1_BE3 balances low RDS(on), moderate Qg, AEC-Q101 compliance, and compact PowerPAK SO-8L size - making it optimal for space-constrained, high-reliability automotive power stages requiring both efficiency and ruggedness.
Availability
SQJ858AEP-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control, DC-DC conversion, and battery management systems requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for SQJ858AEP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ858AEP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature under-hood applications demanding AEC-Q101 reliability and low-loss switching.
FAQ
What is the maximum continuous drain current rating for SQJ858AEP-T1_BE3 at 125 °C case temperature?
The SQJ858AEP-T1_BE3 supports 33 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8L package and ensures reliable operation within its 175 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to maintain TC ≤ 125 °C under full load.
Is SQJ858AEP-T1_BE3 suitable for synchronous rectification in automotive DC-DC converters?
Yes, SQJ858AEP-T1_BE3 is well-suited for synchronous rectification due to its low RDS(on) (6.3 mΩ @ 10 V), fast switching (td(off) = 26 ns typ.), and low Crss (110–140 pF), which minimize shoot-through risk and reverse recovery losses. Its AEC-Q101 qualification and 175 °C rating further support use in high-reliability 48 V/12 V converter topologies.
Does SQJ858AEP-T1_BE3 have an integrated Schottky body diode?
No, SQJ858AEP-T1_BE3 uses a standard silicon body diode inherent to its N-channel MOSFET structure. Its forward voltage VSD is 0.8–1.1 V at IF = 15 A and VGS = 0 V, and it is rated for 230 A pulsed source current (ISM). It does not incorporate a separate Schottky or merged PN/Schottky structure.
What is the recommended PCB pad layout for SQJ858AEP-T1_BE3's PowerPAK® SO-8L package?
Vishay specifies a recommended minimum pad pattern for SQJ858AEP-T1_BE3 in document 63818: a 5.00 mm × 4.06 mm thermal pad for the exposed drain paddle, with 0.51 mm wide and 2.31 mm long source/gate traces. The layout must provide ≥ 200 mm² of 2 oz. copper connected to the drain paddle to achieve the rated RthJC = 3.1 °C/W and avoid solder voiding.
How is gate resistance (Rg) specified for SQJ858AEP-T1_BE3, and why does it matter in layout?
SQJ858AEP-T1_BE3 has a typical gate resistance Rg of 2.97 Ω (1.5–4.5 Ω range), measured at 1 MHz. This parameter directly affects switching speed and ringing; layout must minimize gate loop inductance using short, wide traces and local decoupling. The dual gate pins (1 and 8) are intended to be paralleled to halve effective Rg and improve drive robustness in noisy automotive environments.
SQJ858AEP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 6.3mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2450 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 48W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ858AEP-T1_BE3 FAQ
1.How can I place an order for SQJ858AEP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ858AEP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ858AEP-T1_BE3 reliable?
The price and inventory of SQJ858AEP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ858AEP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJ858AEP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ858AEP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ858AEP-T1_BE3?
SQJ858AEP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ858AEP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ858AEP-T1_BE3?
For technical support, including SQJ858AEP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ858AEP-T1_BE3 requirements.
6.How does Aetrix verify that SQJ858AEP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJ858AEP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ858AEP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJ858AEP-T1_BE3?
All SQJ858AEP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ858AEP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ858AEP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJ858AEP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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