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Vishay Siliconix SQJ858AEP-T1_GE3
- Part No.:
- SQJ858AEP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ858AEP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 58A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,805
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Product details
Overview
SQJ858AEP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 58 A continuous drain current at 25 °C, and 0.0063 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is housed in a PowerPAK® SO-8L leadless package, targeting high-efficiency DC-DC converters and motor control stages in engine management systems.
For engineers reviewing the SQJ858AEP-T1_GE3 datasheet, SQJ858AEP-T1_GE3 pinout, SQJ858AEP-T1_GE3 application, or SQJ858AEP-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS testing, low gate charge (36 nC typ.), and thermal performance with RthJC = 3.1 °C/W - critical for under-hood power stage reliability.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-current automotive power conversion. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with 3.3 V and 5 V controllers, while the 1951 pF typical input capacitance (Ciss) supports fast turn-on with moderate gate drive strength.
The device integrates a body diode with 0.8–1.1 V forward voltage at 15 A, suitable for synchronous rectification and freewheeling in buck converters and H-bridge motor drivers. Its 61 mJ single-pulse avalanche energy rating ensures transient overvoltage resilience during load dump or inductive switching events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail applications |
| RDS(on) @ 10 V | 0.0063 Ω - Enables <1 W conduction loss at 40 A, reducing heatsink requirements |
| ID (continuous) | 58 A @ TC = 25 °C - Supports high-current power stages without parallel devices |
| Qg (total) | 36 nC typ. - Low gate charge minimizes driver power and switching transition time |
| TJ max | +175 °C - Qualified for under-hood operation in engine control units and transmission modules |
| RthJC | 3.1 °C/W - Enables efficient heat transfer to PCB copper or heatsink via exposed drain pad |
| AEC-Q101 | Qualified - Meets automotive stress test requirements for reliability in safety-critical systems |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), 5.13 mm × 6.15 mm footprint, 1.07 mm height. Exposed drain terminal on bottom side provides low-inductance, high-current path and primary thermal interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; requires ≤ ±20 V drive; 2.97 Ω typical gate resistance limits ringing |
| 2 (S) | Source | Power return node; tied to PCB ground plane; forms reference for gate drive |
| 3 (S) | Source | Second source connection; reduces source inductance in high-di/dt switching |
| 4 (S) | Source | Third source connection; improves current sharing and thermal spreading |
| 5 (D) | Drain | Main power output; connected to exposed bottom copper pad for thermal and electrical conduction |
| 6 (D) | Drain | Second drain connection; enhances current capacity and reduces package inductance |
| 7 (D) | Drain | Third drain connection; supports high-current paths with minimal voltage drop |
| 8 (D) | Drain | Fourth drain connection; completes low-impedance drain network to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × area efficiency for compact, high-current power stages |
| 100 % Rg tested | Ensures consistent gate drive timing and eliminates batch-to-batch timing variation |
| 100 % UIS tested | Guarantees ruggedness against unclamped inductive switching stress in motor drives |
| Exposed drain thermal pad | Enables direct thermal coupling to PCB copper, achieving 3.1 °C/W junction-to-case resistance |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material requirements |
Applications
| Engine Control Unit (ECU) Power Stage | Automotive DC-DC Converter |
|---|---|
Use Scenario: High-side switch in 12 V to 5 V/3.3 V buck converter supplying microcontroller and sensor rails within ECU housing. IC Role / Device Role / Timing Role: Primary power switch regulating output voltage; operates at 200–500 kHz with synchronous rectification. Use Value: 0.0063 Ω RDS(on) at 10 V reduces conduction loss by >30 % vs. comparable 8-pin SO-8 MOSFETs, improving thermal margin at +125 °C ambient. | Use Scenario: Low-side switch in 48 V to 12 V bidirectional DC-DC converter for mild hybrid vehicle energy recovery. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous rectification stage; driven with precise gate timing. Use Value: 0.8–1.1 V body diode forward voltage and low Qgd/Qgs ratio enable high efficiency (>95 %) at 20 A load with minimal reverse recovery loss. |
| Electric Power Steering (EPS) Motor Driver | Transmission Control Module (TCM) Solenoid Driver |
Use Scenario: Half-bridge leg in three-phase inverter driving 12 V brushed or brushless assist motor in EPS system. IC Role / Device Role / Timing Role: High-current switching element handling peak currents up to 58 A during torque assist transients. Use Value: +175 °C rated junction temperature and 61 mJ avalanche energy ensure survival during motor stall or short-circuit fault conditions. | Use Scenario: High-side driver for 12 V solenoid valves controlling hydraulic pressure in automatic transmission shift actuators. IC Role / Device Role / Timing Role: Load switch enabling/disabling solenoid current; operated with PWM for precise pressure modulation. Use Value: AEC-Q101 qualification and 100 % UIS testing guarantee long-term reliability across 100,000+ shift cycles under vibration and thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | Higher RDS(on) (0.0085 Ω @ 10 V), TO-252 package, no AEC-Q101 qualification | Not qualified for automotive under-hood use; limited to industrial or consumer DC-DC | Select only for non-automotive cost-sensitive designs where thermal margin allows higher conduction loss |
| STL220N4F7AG | Same 40 V rating, 0.0055 Ω RDS(on), PowerFLAT 5×6 package, AEC-Q101 qualified | Smaller footprint (5 mm × 6 mm vs. 5.13 mm × 6.15 mm); slightly lower ID (50 A) | Preferred when board space is constrained and 50 A continuous current suffices; verify thermal interface compatibility |
Compared with IRF7470PBF and STL220N4F7AG, the SQJ858AEP-T1_GE3 offers the best balance of ultra-low RDS(on), full AEC-Q101 compliance, and proven thermal performance in PowerPAK SO-8L - making it optimal for high-reliability, high-current automotive power stages where both efficiency and qualification are mandatory.
Availability
SQJ858AEP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and transmission control modules requiring stable component supply and automotive-grade traceability.
Supply support for SQJ858AEP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The SQJ858AEP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for demanding under-hood applications including engine management, ADAS power supplies, and electrified chassis systems.
FAQ
What is the maximum continuous drain current rating for SQJ858AEP-T1_GE3 at 125 °C case temperature?
The SQJ858AEP-T1_GE3 supports 33 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures reliable operation in high-ambient environments such as engine compartments. The SQJ858AEP-T1_GE3 maintains safe junction temperatures when properly mounted on a 1" square FR-4 PCB with 2 oz. copper.
Is SQJ858AEP-T1_GE3 qualified to AEC-Q101, and what tests does that include?
Yes, SQJ858AEP-T1_GE3 is AEC-Q101 qualified. This qualification includes stress tests for high-temperature operating life, temperature cycling, humidity bias HAST, and mechanical shock/vibration - all performed per the AEC-Q101 standard. Additionally, Vishay performs 100 % Rg (gate resistance) and UIS (unclamped inductive switching) testing on every production lot of the SQJ858AEP-T1_GE3 to ensure automotive-grade robustness.
What is the gate threshold voltage range for SQJ858AEP-T1_GE3, and how does it affect controller compatibility?
The gate threshold voltage (VGS(th)) for SQJ858AEP-T1_GE3 is specified from 1.5 V to 2.5 V at ID = 250 μA. This low, tightly controlled threshold enables reliable turn-on with standard 3.3 V and 5 V logic-level gate drivers, eliminating the need for level-shifting circuitry. The SQJ858AEP-T1_GE3 remains fully enhanced well below 4.5 V, supporting efficient operation in low-voltage automotive microcontroller interfaces.
Does SQJ858AEP-T1_GE3 have an integrated body diode, and what are its key characteristics?
Yes, SQJ858AEP-T1_GE3 includes a monolithic body diode with a forward voltage (VSD) of 0.8–1.1 V at IF = 15 A and VGS = 0 V. Its reverse recovery charge (Qrr) and softness are optimized for synchronous rectification in buck converters. The SQJ858AEP-T1_GE3 body diode supports pulsed source current up to 230 A and is characterized for operation up to +175 °C junction temperature.
What is the recommended PCB pad layout for SQJ858AEP-T1_GE3 in PowerPAK SO-8L package?
Vishay specifies a recommended minimum pad pattern for the SQJ858AEP-T1_GE3 in Document 63818: 5.000 mm × 2.310 mm for the central drain pad, with 0.510 mm wide source/gate pads and 0.410 mm spacing between terminals. Thermal vias under the exposed drain pad are strongly recommended to enhance heat transfer to inner ground planes. The SQJ858AEP-T1_GE3 requires reflow soldering per JEDEC J-STD-020; manual iron soldering is not recommended due to its leadless construction.
SQJ858AEP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.3mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2450 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 48W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ858AEP-T1_GE3 FAQ
1.How can I place an order for SQJ858AEP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ858AEP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ858AEP-T1_GE3 reliable?
The price and inventory of SQJ858AEP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ858AEP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ858AEP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ858AEP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ858AEP-T1_GE3?
SQJ858AEP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ858AEP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ858AEP-T1_GE3?
For technical support, including SQJ858AEP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ858AEP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ858AEP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ858AEP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ858AEP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ858AEP-T1_GE3?
All SQJ858AEP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ858AEP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ858AEP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ858AEP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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