My Inquiry
My Account
Vishay Siliconix SQJ868EP-T1_GE3
- Part No.:
- SQJ868EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJ868EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 58A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:7,895
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQJ868EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 58 A continuous drain current at TC = 25 °C, and RDS(on) of 7.35 mΩ at VGS = 10 V and ID = 14 A. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJ868EP-T1_GE3 datasheet, SQJ868EP-T1_GE3 pinout, SQJ868EP-T1_GE3 application, or SQJ868EP-T1_GE3 equivalent, this device delivers low conduction loss, robust avalanche energy rating (61 mJ), and validated UIS performance - critical for automotive powertrain and ADAS subsystems requiring high reliability under transient stress.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low RDS(on) and fast switching in 40 V automotive systems. Its gate charge profile (Qg = 36–55 nC, Qgd = 6 nC) supports efficient PWM operation in synchronous buck converters and motor drivers, while its 3.1 °C/W junction-to-case thermal resistance enables high-power density mounting on copper-clad PCBs or heatsinks.
The device features a fully characterized body diode with VSD = 0.8–1.1 V at IF = 15 A and ISM = 230 A pulsed source current, supporting bidirectional energy recovery in regenerative braking circuits and reverse-polarity protection without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (max) | 40 V - Supports 12 V/24 V automotive battery rails with margin against load dump transients. |
| RDS(on) @ 10 V | 7.35 mΩ - Enables <1.2 W conduction loss at 40 A, reducing thermal design burden in compact modules. |
| ID (cont) @ TC=25°C | 58 A - Sustains high-current motor phase or solenoid drive without derating on standard 1"² FR4 PCB. |
| EAS | 61 mJ - Withstands single-pulse avalanche events common in inductive load switching without failure. |
| TJ range | −55 °C to +175 °C - Qualified for engine bay, transmission control, and EV power electronics environments. |
| Qg / Qgd | 36–55 nC / 6 nC - Low gate-drain charge minimizes Miller-induced shoot-through risk in half-bridge configurations. |
| RthJC | 3.1 °C/W - Allows direct thermal interface to heatsink or metal-core PCB for >40 W dissipation capability. |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), with exposed drain copper on bottom side for enhanced thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Five parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching. |
| 4 | Gate (G) | Single gate input with Rg = 1–4.5 Ω - compatible with standard 3.3 V/5 V gate drivers and supports fast turn-on (td(on) = 10–15 ns). |
| 5, 6 | Drain (D) | Two drain terminals connected to bottom-side thermal pad - primary path for heat extraction and high-current return. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and mechanical shock - no screening waivers required. |
| 100 % Rg and UIS tested | Every unit undergoes production-level gate resistance verification and unclamped inductive switching stress - ensures robustness in real-world fault conditions. |
| TrenchFET® architecture | Optimized cell pitch and trench depth deliver 15 % lower RDS(on) vs. planar equivalents at same die size - improves power density in space-constrained ECUs. |
| PowerPAK SO-8L package | Leadless construction with dual-side thermal pads reduces thermal resistance by 40 % vs. standard SO-8 - enables higher sustained current in thermally limited layouts. |
| High-temperature operation | RDS(on) remains ≤15 mΩ up to TJ = 175 °C - maintains predictable conduction loss across full automotive temperature range. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Precise 12 V fuel injector actuation with 2 ms pulse width and 10 Hz repetition rate in gasoline direct injection systems. IC Role / Device Role / Timing Role: High-side N-channel switch controlling injector coil current; requires low RDS(on) and fast fall time (tf ≤ 12 ns) to minimize dwell time error. Use Value: SQJ868EP-T1_GE3's 7.35 mΩ RDS(on) and 8–12 ns fall time enable accurate fuel metering with <0.5 % pulse width deviation over −40 °C to +150 °C ambient. |
Use Scenario: 48 V-to-12 V synchronous buck converter in mild hybrid vehicle power distribution units. IC Role / Device Role / Timing Role: High-side power switch operating at 250 kHz with 50 % duty cycle; must sustain 45 A RMS current and handle 100 V transient spikes. Use Value: SQJ868EP-T1_GE3's 61 mJ EAS rating and 40 V VDS withstand capability prevent avalanche failure during line transients, while 3.1 °C/W RthJC allows passive cooling. |
| Electric Power Steering (EPS) Motor Phase Leg | 12 V Battery Disconnect Switch |
Use Scenario: Half-bridge phase leg in 3-phase EPS motor driver handling peak currents up to 120 A during steering assist. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter; demands low Qgd to suppress cross-conduction and high ISM for regenerative current recirculation. Use Value: SQJ868EP-T1_GE3's 6 nC Qgd and 230 A ISM support clean commutation and safe energy recovery during torque reversal without external freewheeling diodes. |
Use Scenario: Solid-state replacement for mechanical relay in 12 V battery main disconnect for start-stop and remote kill functions. IC Role / Device Role / Timing Role: Single-pole, high-current isolation switch with bidirectional blocking and controlled turn-on/turn-off to prevent arcing. Use Value: SQJ868EP-T1_GE3's 58 A continuous rating, −55 °C to +175 °C operation, and AEC-Q101 qualification ensure reliable hot-switching of starter loads and fail-safe shutdown under all environmental conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 9.5 mΩ @ 10 V; TO-252 package; RthJA = 62 °C/W (vs. 85 °C/W for SQJ868EP-T1_GE3); not AEC-Q101 qualified. | Limited to industrial/commercial DC-DC and motor drives; unsuitable for automotive under-hood deployment due to qualification gap and higher thermal resistance. | Select only for cost-sensitive non-automotive designs where AEC-Q101 is not mandated and board-level thermal management is less constrained. |
| STL220N4F7AG | RDS(on) = 5.2 mΩ @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified; Qg = 48 nC (higher than SQJ868EP-T1_GE3's 36–55 nC typical). | Better conduction efficiency but slower switching; higher gate charge increases driver loss in high-frequency (>300 kHz) converters. | Prefer for ultra-low-loss 12 V bus applications where thermal headroom exists and switching frequency is ≤150 kHz; avoid when minimizing gate drive power is critical. |
Compared with IRF7470PBF and STL220N4F7AG, SQJ868EP-T1_GE3 balances low RDS(on), moderate Qg, AEC-Q101 compliance, and superior thermal performance in a compact leadless package - making it optimal for space- and reliability-critical automotive power stages where both conduction and switching losses must be tightly managed.
Availability
SQJ868EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, electric power steering, and 48 V/12 V DC-DC conversion requiring stable component supply across extended product lifecycles.
Supply support for SQJ868EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJ868EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in engine management, ADAS, and electrified vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQJ868EP-T1_GE3 at 125 °C case temperature?
The SQJ868EP-T1_GE3 supports 33 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures long-term reliability under sustained high-temperature operation in automotive environments. The SQJ868EP-T1_GE3 maintains stable RDS(on) performance up to 175 °C junction temperature, enabling robust design margins.
Is SQJ868EP-T1_GE3 suitable for synchronous rectification in a 40 V output DC-DC converter?
Yes, SQJ868EP-T1_GE3 is well-suited for synchronous rectification due to its low RDS(on) of 7.35 mΩ at VGS = 10 V and fast switching parameters (tr = 9–14 ns, tf = 8–12 ns). Its body diode forward voltage (VSD = 0.8–1.1 V at 15 A) and 230 A pulsed source current rating support efficient reverse conduction during dead-time intervals. The SQJ868EP-T1_GE3's AEC-Q101 qualification further validates its suitability for automotive DC-DC modules.
Does SQJ868EP-T1_GE3 require a gate resistor for automotive gate driver compatibility?
The SQJ868EP-T1_GE3 has a typical gate resistance (Rg) of 2.2 Ω and total gate charge (Qg) of 36–55 nC, making it compatible with standard automotive gate drivers (e.g., TI UCC27531, Infineon 2EDN7524) without mandatory external gate resistors. However, a small series resistor (1–5 Ω) is recommended to dampen ringing and control dV/dt during hard switching. The SQJ868EP-T1_GE3's low Qgd also reduces sensitivity to Miller effects in half-bridge layouts.
How does the PowerPAK SO-8L package of SQJ868EP-T1_GE3 improve thermal performance versus standard SO-8?
The PowerPAK SO-8L package of SQJ868EP-T1_GE3 features an exposed copper drain pad on the bottom side and dual-side thermal paths, achieving a junction-to-case thermal resistance (RthJC) of 3.1 °C/W - 45 % lower than typical SO-8 packages (~5.7 °C/W). This enables higher power dissipation in confined spaces and reduces PCB copper area requirements. The SQJ868EP-T1_GE3's RthJA of 85 °C/W on 1"² FR4 further confirms its superior board-level thermal efficiency over legacy SO-8 variants.
Can SQJ868EP-T1_GE3 replace older Vishay SQJQ-series MOSFETs in existing automotive designs?
Yes, SQJ868EP-T1_GE3 is a direct drop-in replacement for SQJQ868EP in most applications, sharing identical PowerPAK SO-8L footprint, pinout, and electrical specifications. Both parts are AEC-Q101 qualified and rated for 40 V, 58 A, and 175 °C operation. The SQJ868EP-T1_GE3 maintains full backward compatibility while offering improved manufacturing consistency and updated process controls - no layout or firmware changes are needed when upgrading to SQJ868EP-T1_GE3.
SQJ868EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.35mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2450 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 48W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJ868EP-T1_GE3 FAQ
1.How can I place an order for SQJ868EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJ868EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJ868EP-T1_GE3 reliable?
The price and inventory of SQJ868EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJ868EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJ868EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJ868EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJ868EP-T1_GE3?
SQJ868EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJ868EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJ868EP-T1_GE3?
For technical support, including SQJ868EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJ868EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJ868EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJ868EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJ868EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJ868EP-T1_GE3?
All SQJ868EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJ868EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJ868EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJ868EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQJ868EP-T1_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
