My Inquiry
My Account
Vishay Siliconix SQJA61EP-T1_GE3
- Part No.:
- SQJA61EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA61EP-T1_GE3.pdf
- Description:
- MOSFET P-CHANNEL 60V 50A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:6,601
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQJA61EP-T1_GE3 from Vishay Siliconix is an AEC-Q101-qualified automotive P-channel MOSFET with -60 V drain-source voltage rating, 0.0121 Ω RDS(on) at VGS = -10 V, and -54.5 A continuous drain current at TC = 25 °C. It serves as a high-current load switch in 12 V/24 V automotive power distribution systems including body control modules and seat motor drivers.
For engineers reviewing the SQJA61EP-T1_GE3 datasheet, SQJA61EP-T1_GE3 pinout, SQJA61EP-T1_GE3 application, or SQJA61EP-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, PowerPAK SO-8L package layout, and validated alternative parts for automotive-grade design-in.
Technical Context
This P-channel MOSFET uses TrenchFET® technology to achieve low on-resistance and robust avalanche capability (96.8 mJ EAS). Its gate threshold voltage range of -1.5 V to -2.5 V enables direct interface with standard 3.3 V and 5 V microcontroller GPIOs without level shifting.
The device features 100 % Rg and UIS testing per AEC-Q101, operates from -55 °C to +175 °C junction temperature, and delivers 2.2 °C/W junction-to-case thermal resistance for high-power switching in constrained PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Supports full reverse-battery protection and load dump transients in 24 V automotive systems |
| RDS(on) @ VGS = -10 V | 0.0121 Ω - Enables <1.3 W conduction loss at 10 A, reducing heatsink requirements |
| ID (continuous) | -54.5 A @ TC = 25 °C - Sustains high-current loads such as HVAC blowers and window lift motors |
| Qg | 48 nC typical - Allows fast switching with moderate gate drive strength (e.g., 1 A peak driver) |
| RthJC | 2.2 °C/W - Enables efficient heat transfer to copper pour or heatsink via exposed drain pad |
| EAS | 96.8 mJ - Withstands inductive kickback from solenoids and brushed DC motors without failure |
| TJ max | +175 °C - Qualified for under-hood applications including engine control and transmission modules |
Pinout & Package
Package: PowerPAK® SO-8L (single), 5.13 mm × 6.15 mm footprint with exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source terminals tied internally; used for low-side return path and thermal conduction |
| 5 | Gate (G) | Control input requiring -10 V for full enhancement; logic-level compatible down to -4.5 V |
| 6 | Drain (D) | High-current output node connected to exposed copper pad; must be soldered to large PCB copper area |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive production use across temperature, humidity, and vibration stress profiles |
| TrenchFET® architecture | Delivers 17 % lower RDS(on) vs. planar P-channel MOSFETs at same die size and voltage rating |
| 100 % Rg and UIS tested | Ensures gate robustness against ESD and reliable energy handling during unclamped inductive switching |
| Exposed drain pad | Provides dual-path thermal dissipation (PCB conduction + case conduction) and reduces RthJA by 35 % vs. SO-8 |
| Body diode trr | 50–100 ns reverse recovery time - Minimizes switching losses in synchronous rectification and H-bridge freewheeling |
Applications
| Body Control Module (BCM) | Seat Motor Driver |
|---|---|
Use Scenario: High-side power switching for door lock actuators, mirror heaters, and interior lighting banks. IC Role / Device Role / Timing Role: P-channel high-side load switch controlled by MCU GPIO with active-low enable logic. Use Value: Low RDS(on) minimizes voltage drop across switch, preserving battery voltage margin for sensitive sensors and LEDs. |
Use Scenario: Bidirectional current control for reversible seat position motors using half-bridge topology. IC Role / Device Role / Timing Role: Low-side switch in complementary pair with N-channel MOSFET; handles reverse current during direction reversal. Use Value: Fast body diode recovery (trr ≤ 100 ns) suppresses shoot-through risk and reduces freewheeling losses by 22 % vs. standard P-channel alternatives. |
| Engine Cooling Fan Controller | 12 V/24 V DC-DC Converter Sync Rectifier |
Use Scenario: PWM-controlled fan speed regulation in engine bay environments up to 150 °C ambient. IC Role / Device Role / Timing Role: High-current switching element in buck converter output stage driving brushless fan motor. Use Value: 175 °C rated junction temperature ensures stable operation without derating in sealed fan housings. |
Use Scenario: Secondary-side synchronous rectification in isolated flyback or forward converters for automotive infotainment supplies. IC Role / Device Role / Timing Role: P-channel rectifier replacing Schottky diode to reduce conduction loss at 5–10 A output currents. Use Value: 0.0225 Ω RDS(on) at VGS = -4.5 V enables >92 % efficiency at 5 A, outperforming 40 V Schottky diodes above 3 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPbF | TO-220 package, -100 V rating, 0.3 Ω RDS(on) at -10 V, no AEC-Q101 qualification | Limited to non-automotive industrial use; unsuitable for under-hood deployment due to package thermal limits | Select only for cost-sensitive non-automotive prototypes where -60 V rating and AEC-Q101 are not required |
| DMT6009LPS-13 | PowerDI 5060 package, -60 V, 0.0095 Ω RDS(on) at -10 V, AEC-Q101 qualified, but 5.0 mm × 6.0 mm footprint differs | Requires PCB layout change; higher gate charge (58 nC) increases driver power demand | Prefer when board space allows larger thermal pad and higher efficiency justifies re-layout effort |
Compared with IRF9530NPbF, SQJA61EP-T1_GE3 offers 96 % lower RDS(on) and automotive qualification; compared with DMT6009LPS-13, it provides identical voltage rating and qualification with 17 % lower Qg, easing gate drive design while maintaining compatibility with existing PowerPAK SO-8L footprints.
Availability
SQJA61EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, motor control systems, and power conversion circuits requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for SQJA61EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA61EP-T1_GE3 belongs to Vishay's AEC-Q101-qualified TrenchFET® P-channel portfolio, engineered specifically for high-current, high-temperature automotive power switching where low on-resistance and ruggedness are critical.
FAQ
What is the maximum operating junction temperature for SQJA61EP-T1_GE3?
The SQJA61EP-T1_GE3 has a maximum operating junction temperature of +175 °C, confirmed in its Absolute Maximum Ratings table and validated through AEC-Q101 temperature cycling and high-temperature operating life testing. This rating allows direct use in under-hood applications such as engine control units and transmission control modules without thermal derating at ambient temperatures up to 125 °C.
Does SQJA61EP-T1_GE3 support logic-level gate drive?
Yes, SQJA61EP-T1_GE3 supports logic-level gate drive: its gate threshold voltage (VGS(th)) ranges from -1.5 V to -2.5 V, and it achieves 0.0225 Ω RDS(on) at VGS = -4.5 V. This enables direct interfacing with 3.3 V and 5 V microcontrollers without external level shifters, simplifying circuit design in automotive body control modules.
Is SQJA61EP-T1_GE3 pin-compatible with standard SO-8 packages?
No, SQJA61EP-T1_GE3 uses the PowerPAK® SO-8L (single) package, which has a different pinout and thermal pad configuration than standard SO-8. Pin 6 is the drain connected to an exposed copper pad on the bottom, and pins 1–4 and 7–8 are internally shorted source terminals. PCB layout must follow Vishay's recommended pad pattern (Document 63818) to ensure mechanical reliability and thermal performance.
What is the avalanche energy rating of SQJA61EP-T1_GE3?
The SQJA61EP-T1_GE3 is rated for 96.8 mJ single-pulse avalanche energy (EAS) at TJ = 25 °C with L = 0.1 mH, as specified in its Absolute Maximum Ratings table. This value was verified via 100 % UIS testing per AEC-Q101, making it suitable for driving inductive loads like fuel injectors and solenoids where unclamped inductive switching is possible.
How does the body diode performance of SQJA61EP-T1_GE3 compare to general-purpose P-channel MOSFETs?
The SQJA61EP-T1_GE3 body diode exhibits 50–100 ns reverse recovery time (trr) and 49–100 nC reverse recovery charge (Qrr), significantly faster than legacy P-channel MOSFETs. This enables efficient freewheeling in H-bridge motor drivers and reduces switching losses in synchronous rectifier applications where the body diode conducts during dead-time intervals.
SQJA61EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 54.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.1mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA61EP-T1_GE3 FAQ
1.How can I place an order for SQJA61EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA61EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA61EP-T1_GE3 reliable?
The price and inventory of SQJA61EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA61EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA61EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA61EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA61EP-T1_GE3?
SQJA61EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA61EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA61EP-T1_GE3?
For technical support, including SQJA61EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA61EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA61EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA61EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA61EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA61EP-T1_GE3?
All SQJA61EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA61EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA61EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA61EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQJA61EP-T1_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
